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Vishay Siliconix SQ4284EY-T1_GE3
- Part No.:
- SQ4284EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4284EY-T1_GE3.pdf
- Description:
- MOSFET 2N-CH 40V 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:5,420
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Product details
Overview
SQ4284EY-T1_GE3 from Vishay Siliconix is an automotive-qualified dual N-channel TrenchFET® MOSFET in SO-8 package, rated for 40 V VDS, 8 A continuous drain current at 25 °C, and RDS(on) of 0.0135 Ω at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in engine control units and body electronics.
For engineers reviewing the SQ4284EY-T1_GE3 datasheet, SQ4284EY-T1_GE3 pinout, SQ4284EY-T1_GE3 application, or SQ4284EY-T1_GE3 equivalent, key selection criteria include its dual-channel layout, low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS testing, and thermal performance validated on 1" FR-4 PCB.
Technical Context
This dual N-channel MOSFET integrates two independent 40 V, 8 A switches in a single SO-8 package with shared drain terminals (D1/D2) and isolated source/gate connections. Its TrenchFET® structure enables low gate charge (Qg = 30–45 nC) and fast switching (td(on) = 10–15 ns, tf = 11–17 ns), supporting high-frequency PWM in automotive DC-DC converters and motor drivers.
The device features robust avalanche capability (EAS = 115 mJ, IAS = 48 A), 100 % UIS tested, and guaranteed Rg (2.2–6.8 Ω) for predictable gate drive design. Thermal resistance RthJF = 38 °C/W (junction-to-foot) supports high-power density layouts where drain pads serve as primary heat paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) @ VGS = 10 V | 0.0135 Ω - Enables <1 W conduction loss at 7 A, critical for thermally constrained ECUs |
| RDS(on) @ VGS = 4.5 V | 0.0148 Ω - Supports logic-level gate drive from 5 V microcontrollers without level shifters |
| ID (continuous, TC = 25 °C) | 8 A - Sustained current per channel with SO-8 thermal limits on standard PCB |
| Qg (total gate charge) | 30–45 nC - Determines gate driver power requirement and switching loss in 100–500 kHz applications |
| TJ max | +175 °C - Qualified for under-hood operation in engine management and transmission control modules |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive semiconductor reliability (HTOL, TC, UHAST) |
Pinout & Package
SO-8 Dual package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain paddle for thermal enhancement. Pin 1–8 follow standard SOIC-N pinout with dual-channel symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to PCB ground plane for thermal and EMI control |
| 2 (G1) | Gate of Channel 1 | Control input requiring <45 nC charge; needs local 100 nF decoupling near gate resistor |
| 3 (S2) | Source of Channel 2 | Independent source node enabling half-bridge or dual low-side configurations |
| 4 (G2) | Gate of Channel 2 | Electrically isolated gate; allows asynchronous or complementary drive of second channel |
| 5 (D1) | Drain of Channel 1 | Connected to internal copper paddle; must be soldered to large thermal pad for RthJF = 38 °C/W |
| 6 (D2) | Drain of Channel 2 | Separate drain terminal but shares same thermal paddle; enables dual-switch output with common heat sink |
| 7 (D2) | Drain of Channel 2 (redundant) | Same node as Pin 6 - confirms dual-drain layout for parallel routing in high-current traces |
| 8 (D1) | Drain of Channel 1 (redundant) | Same node as Pin 5 - provides second connection point for robust high-current drain routing |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use with HTOL, temperature cycling, and unbiased HAST testing per Rev. E spec |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency and single-pulse avalanche ruggedness (IAS = 48 A) |
| TrenchFET® technology | Enables 0.0135 Ω RDS(on) at 10 V and 0.0148 Ω at 4.5 V - reduces conduction loss vs. planar MOSFETs |
| Thermal performance (RthJF) | 38 °C/W junction-to-foot - allows >1.3 W dissipation at TC = 125 °C with proper drain pad layout |
| SO-8 Dual footprint | Standard JEDEC MS-012 package - compatible with existing pick-and-place and reflow processes |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Control |
|---|---|
Use Scenario: Driving 12 V solenoid fuel injectors with PWM frequency up to 20 kHz in gasoline direct injection systems. IC Role / Device Role / Timing Role: Dual low-side switch controlling injector coil current; one channel drives primary injector, second handles auxiliary valve. Use Value: 0.0148 Ω RDS(on) at 4.5 V ensures full saturation from MCU GPIO, minimizing coil dwell time error and improving fuel metering accuracy. |
Use Scenario: Controlling bidirectional 24 V blower motor in climate control systems using H-bridge topology. IC Role / Device Role / Timing Role: Two independent low-side switches forming half of H-bridge; paired with external high-side switches. Use Value: 175 °C rating and 115 mJ EAS withstand motor back-EMF spikes during abrupt direction reversal and stall conditions. |
| Body Control Module (BCM) LED Headlamp Dimming | Start-Stop System Solenoid Interface |
Use Scenario: PWM dimming of high-brightness LED arrays (e.g., DRL, position lights) with 0–100 % duty cycle control. IC Role / Device Role / Timing Role: Dual-channel constant-current sink for two independent LED strings, each driven at 1–3 A. Use Value: Low Qg (30–45 nC) and fast tf (11–17 ns) enable clean 1–20 kHz dimming without audible noise or LED flicker. |
Use Scenario: Switching 12 V starter solenoid and battery disconnect relays in 12 V micro-hybrid start-stop systems. IC Role / Device Role / Timing Role: Robust low-side driver handling inrush currents >30 A during cranking and sustaining 8 A hold current. Use Value: 32 A pulsed drain current (IDM) and 48 A avalanche current (IAS) prevent failure during repeated cold-cranking events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7341PbF | RDS(on) = 0.042 Ω @ 10 V; lower VDS (40 V same), higher Qg (51 nC); not AEC-Q101 qualified | Limited to non-automotive industrial or consumer use due to lack of automotive qualification | Select only for cost-sensitive non-automotive designs where 0.042 Ω RDS(on) is acceptable and 175 °C operation not required |
| DMN3029LSD-13 | RDS(on) = 0.029 Ω @ 10 V; same SO-8 Dual package; AEC-Q101 qualified; lower ID (6.5 A) and TJ max (+150 °C) | Suitable for lower-power automotive modules (e.g., door locks, mirror controls) but not high-current ECU or HVAC loads | Prefer when board space is constrained and 6.5 A/channel suffices; avoid in high-temperature or high-current engine bay applications |
Compared with IRF7341PbF and DMN3029LSD-13, SQ4284EY-T1_GE3 delivers the lowest RDS(on) (0.0135 Ω), highest continuous current (8 A), and widest temperature range (+175 °C), making it optimal for thermally demanding automotive power stages where efficiency and reliability are prioritized over cost or footprint reduction.
Availability
SQ4284EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC motor drives, and body electronics requiring stable component supply across extended temperature and lifetime requirements.
Supply support for SQ4284EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4284EY-T1_GE3 belongs to Vishay's automotive-grade TrenchFET® Power MOSFET family, engineered specifically for high-efficiency, high-temperature switching in engine management, transmission control, and body electronics systems.
FAQ
What is the maximum continuous drain current per channel for SQ4284EY-T1_GE3 at 125 °C case temperature?
The maximum continuous drain current per channel for SQ4284EY-T1_GE3 is 7.4 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under typical PCB mounting conditions and ensures reliable operation within the device's safe operating area. SQ4284EY-T1_GE3 maintains this rating while retaining full AEC-Q101 compliance at elevated temperatures.
Is SQ4284EY-T1_GE3 pin-compatible with standard SO-8 dual MOSFETs like the IRF7341?
SQ4284EY-T1_GE3 uses the JEDEC MS-012 SO-8 package with identical 1.27 mm pitch and 5.0 mm × 4.0 mm outline, matching the physical pinout of IRF7341. However, pin functions differ: SQ4284EY-T1_GE3 assigns Pins 5/8 to D1 and Pins 6/7 to D2, whereas IRF7341 uses Pins 5/6 for D1/D2 respectively. Direct replacement requires PCB layout verification - SQ4284EY-T1_GE3 is not a drop-in substitute without trace review.
Does SQ4284EY-T1_GE3 support 3.3 V logic-level gate drive?
SQ4284EY-T1_GE3 is characterized down to VGS = 4.5 V (RDS(on) = 0.0148 Ω), but its gate threshold voltage VGS(th) ranges from 1.5 V to 2.5 V. While it may turn on with 3.3 V drive, RDS(on) increases significantly above 0.02 Ω and is not guaranteed. For reliable 3.3 V operation, a gate driver or level shifter is recommended. SQ4284EY-T1_GE3 is optimized for 4.5 V and 10 V gate drive systems.
What is the thermal resistance from junction to ambient (RthJA) for SQ4284EY-T1_GE3 on a standard PCB?
The junction-to-ambient thermal resistance RthJA for SQ4284EY-T1_GE3 is 120 °C/W when mounted on a 1" square FR-4 PCB (2 oz. copper, double-sided, 100 % coverage). This value assumes no additional heatsinking and defines the worst-case thermal performance for layout estimation. For higher power, the lower RthJF = 38 °C/W (junction-to-foot) should be used with a thermally enhanced drain pad design. SQ4284EY-T1_GE3 benefits significantly from optimized copper pour on the drain terminals.
How is avalanche ruggedness verified for SQ4284EY-T1_GE3?
SQ4284EY-T1_GE3 undergoes 100 % Unclamped Inductive Switching (UIS) testing per specification, with single-pulse avalanche energy EAS = 115 mJ and peak current IAS = 48 A (L = 0.1 mH). This validation ensures robustness against inductive kickback in motor and solenoid drive applications. The test is performed at TJ = 25 °C and forms part of AEC-Q101 qualification. SQ4284EY-T1_GE3 data sheet specifies these values explicitly in the Absolute Maximum Ratings table.
SQ4284EY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200pF @ 25V
- Power - Max:
- 3.9W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4284EY-T1_GE3 FAQ
1.How can I place an order for SQ4284EY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4284EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4284EY-T1_GE3 reliable?
The price and inventory of SQ4284EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4284EY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4284EY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4284EY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4284EY-T1_GE3?
SQ4284EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4284EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4284EY-T1_GE3?
For technical support, including SQ4284EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4284EY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4284EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4284EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4284EY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4284EY-T1_GE3?
All SQ4284EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4284EY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4284EY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4284EY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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