Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4401CEY-T1_GE3

Name: SQ4401CEY-T1_GE3
Brand: Vishay Siliconix
SKU: SQ4401CEY-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQ4401CEY-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4401CEY-T1_GE3.pdf

Description:: AUTOMOTIVE P-CHANNEL 40 V (D-S)

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:14

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQ4401CEY-T1_GE3 from Vishay Siliconix is an AEC-Q101-qualified automotive P-channel MOSFET in SO-8 package, rated for -40 V V_DS, 17.3 A continuous drain current at 25 °C, and R_DS(on) of 0.014 Ω at V_GS = -10 V. It operates up to +175 °C junction temperature and is optimized for high-side load switching in engine control units and body electronics.

For engineers reviewing the SQ4401CEY-T1_GE3 datasheet, SQ4401CEY-T1_GE3 pinout, SQ4401CEY-T1_GE3 application, or SQ4401CEY-T1_GE3 equivalent, key selection criteria include its -40 V breakdown rating, low 0.014 Ω on-resistance at -10 V gate drive, AEC-Q101 qualification, 175 °C operation, and SO-8 thermal performance with R_thJA = 85 °C/W.

Technical Context

This P-channel MOSFET uses TrenchFET® technology to achieve low R_DS(on) and robust UIS performance. It features 100 % R_g and unclamped inductive switching (UIS) testing per AEC-Q101, with guaranteed gate resistance of 0.95–3.21 Ω and Q_g of 71–115 nC at -10 V.

The device integrates a fast-recovery body diode with t_rr = 30–60 ns and Q_rr = 36–72 nC, enabling efficient synchronous rectification and reverse polarity protection. Its SO-8 footprint provides validated thermal coupling to PCB via exposed drain pads, delivering R_thJF = 21 °C/W to the drain foot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Withstands reverse battery transients up to -40 V without breakdown.
R_DS(on) @ V_GS = -10 V	0.014 Ω - Enables <1.5 W conduction loss at 10.5 A, critical for thermally constrained automotive modules.
I_D (continuous)	-17.3 A @ T_C = 25 °C - Supports high-current loads such as fuel pumps and HVAC actuators.
Junction temp. range	-55 to +175 °C - Qualified for under-hood applications including transmission control and engine management.
Q_g	71–115 nC - Determines gate driver sizing; compatible with standard automotive gate drivers (e.g., TC1412, UCC27531).
t_rr / Q_rr	30–60 ns / 36–72 nC - Minimizes switching losses and voltage overshoot during body-diode commutation.
R_thJA	85 °C/W - Validated on 1" × 1" FR-4 PCB; enables thermal design with standard layout rules.

Pinout & Package

SO-8 (Narrow) package per JEDEC MS-012, with exposed drain paddle for enhanced thermal dissipation. Dimensions: 4.9 mm × 6.0 mm × 1.55 mm (D × H × A), lead pitch 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Source (S)	Common source connection; pins 1/2/3/8 internally bonded to source metallization for low-inductance return path.
4	Gate (G)	Control input; requires negative V_GS for turn-on; gate resistance 0.95–3.21 Ω limits ringing and EMI.
5, 6, 7	Drain (D)	High-side switch output node; pins 5/6/7 and exposed paddle form low-impedance drain path for power delivery.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and mechanical shock.
TrenchFET® architecture	Delivers 23% lower R_DS(on) vs. planar P-channel equivalents at same die size, improving power density.
100 % R_g and UIS tested	Ensures gate robustness against ESD and inductive energy spikes in motor and solenoid drive circuits.
Body diode t_rr ≤ 60 ns	Reduces reverse recovery losses in bidirectional DC/DC converters and reverse polarity protection circuits.
R_thJF = 21 °C/W	Enables direct thermal coupling to heatsink or copper pour through drain paddle, bypassing PCB layers.

Applications

Engine Control Unit (ECU) Power Distribution	Automotive Body Control Module (BCM)
Use Scenario: High-side switching of fuel injector drivers and ignition coil pre-drivers in engine management systems. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V supply to inductive loads with precise PWM timing and fault current limiting. Use Value: -40 V V_DS withstands load dump transients; 175 °C rating ensures reliability near hot engine blocks.	Use Scenario: Reverse polarity protection and power gating for door lock actuators, mirror controls, and interior lighting. IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch providing fail-safe isolation during battery disconnect or short-circuit events. Use Value: 0.014 Ω R_DS(on) minimizes voltage drop across switch, preserving headroom for 5 V logic supplies downstream.
Transmission Control Unit (TCU)	Advanced Driver Assistance Systems (ADAS) Power Management
Use Scenario: Power switching for solenoid valves and hydraulic pressure regulators in automatic transmissions. IC Role / Device Role / Timing Role: High-current, high-temperature load switch enabling fast, repeatable actuation cycles under sustained thermal stress. Use Value: Continuous 10 A capability at 125 °C allows compact packaging without forced air cooling.	Use Scenario: Power sequencing and fault-isolation for radar sensor modules and camera ECUs requiring clean startup/shutdown. IC Role / Device Role / Timing Role: Controlled high-side enable switch with integrated body diode for back-power prevention during hot-swap events. Use Value: Fast 30 ns body diode t_rr prevents latch-up and voltage overshoot when powering down adjacent LDOs or microcontrollers.

Engine Control Unit (ECU) Power Distribution

Automotive Body Control Module (BCM)

Use Scenario: High-side switching of fuel injector drivers and ignition coil pre-drivers in engine management systems.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V supply to inductive loads with precise PWM timing and fault current limiting.

Use Value: -40 V V_DS withstands load dump transients; 175 °C rating ensures reliability near hot engine blocks.

Use Scenario: Reverse polarity protection and power gating for door lock actuators, mirror controls, and interior lighting.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch providing fail-safe isolation during battery disconnect or short-circuit events.

Use Value: 0.014 Ω R_DS(on) minimizes voltage drop across switch, preserving headroom for 5 V logic supplies downstream.

Transmission Control Unit (TCU)

Advanced Driver Assistance Systems (ADAS) Power Management

Use Scenario: Power switching for solenoid valves and hydraulic pressure regulators in automatic transmissions.

IC Role / Device Role / Timing Role: High-current, high-temperature load switch enabling fast, repeatable actuation cycles under sustained thermal stress.

Use Value: Continuous 10 A capability at 125 °C allows compact packaging without forced air cooling.

Use Scenario: Power sequencing and fault-isolation for radar sensor modules and camera ECUs requiring clean startup/shutdown.

IC Role / Device Role / Timing Role: Controlled high-side enable switch with integrated body diode for back-power prevention during hot-swap events.

Use Value: Fast 30 ns body diode t_rr prevents latch-up and voltage overshoot when powering down adjacent LDOs or microcontrollers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	Higher R_DS(on) (0.3 Ω @ -10 V), TO-220 package, no AEC-Q101 qualification.	Limited to non-automotive industrial use; unsuitable for under-hood thermal or reliability requirements.	Select only for cost-sensitive, non-automotive designs where SO-8 footprint and 175 °C operation are not required.
DMT4001LPS-13	Lower V_DS (-30 V), similar R_DS(on) (0.015 Ω), same SO-8, AEC-Q101 qualified.	Not rated for -40 V transients; may require upstream TVS clamping in 12 V systems with severe load dump.	Prefer for space-constrained 24 V auxiliary systems where -30 V rating suffices and thermal budget matches.

Compared with IRF9530NPBF and DMT4001LPS-13, SQ4401CEY-T1_GE3 uniquely combines -40 V rating, 0.014 Ω R_DS(on), AEC-Q101 qualification, and 175 °C operation in SO-8-making it the only option for thermally demanding, high-transient automotive high-side switches.

Availability

SQ4401CEY-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and transmission control systems requiring stable component supply across extended automotive product lifecycles.

Supply support for SQ4401CEY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ4401CEY-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® P-channel MOSFET family, engineered specifically for high-side power switching in harsh automotive environments with elevated temperature and voltage stress.

FAQ

What is the maximum continuous drain current for SQ4401CEY-T1_GE3 at 125 °C case temperature?

The maximum continuous drain current for SQ4401CEY-T1_GE3 is -10 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained high-temperature operation and must be used in thermal design calculations alongside R_thJA = 85 °C/W and R_thJF = 21 °C/W.

Is SQ4401CEY-T1_GE3 suitable for reverse polarity protection in 12 V automotive systems?

Yes, SQ4401CEY-T1_GE3 is well-suited for reverse polarity protection due to its -40 V V_DS rating, which exceeds ISO 7637-2 pulse 1 (-50 V, 50 ms) and pulse 4 (load dump up to -60 V with clamp) requirements when paired with appropriate TVS clamping. Its low 0.014 Ω R_DS(on) also minimizes insertion loss in the main power path.

Does SQ4401CEY-T1_GE3 have a guaranteed gate threshold voltage range?

Yes, SQ4401CEY-T1_GE3 has a guaranteed V_GS(th) range of -1.5 V to -2.5 V at I_D = -250 μA, with typical value -2.0 V. This tight threshold window ensures consistent turn-on behavior across temperature (-55 to +175 °C) and supports reliable interfacing with standard 3.3 V or 5 V microcontroller GPIOs using simple level-shifting networks.

What is the total gate charge (Q_g) specification for SQ4401CEY-T1_GE3, and how does it impact gate driver selection?

SQ4401CEY-T1_GE3 has a total gate charge Q_g of 71–115 nC at V_GS = -10 V. This value directly determines required gate driver peak current: for 50 ns turn-on time, ≥2.3 A peak drive is needed. Compatible drivers include the TC4427A (dual 1.5 A) or UCC27531 (4 A sink/source), both supporting -10 V gate swing and automotive temperature range.

How is the body diode performance of SQ4401CEY-T1_GE3 characterized, and why does it matter in automotive applications?

The body diode of SQ4401CEY-T1_GE3 is characterized with t_rr = 30–60 ns, Q_rr = 36–72 nC, and V_SD = -0.75 to -1.1 V at I_F = -2.7 A. In automotive applications like bidirectional power paths or freewheeling in solenoid drivers, low Q_rr reduces switching losses and EMI, while fast t_rr prevents cross-conduction in half-bridge configurations involving SQ4401CEY-T1_GE3.

SQ4401CEY-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 17.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4250 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 7.14W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4401CEY-T1_GE3 FAQ

1.How can I place an order for SQ4401CEY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4401CEY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4401CEY-T1_GE3 reliable?

The price and inventory of SQ4401CEY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4401CEY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4401CEY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4401CEY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4401CEY-T1_GE3?

SQ4401CEY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4401CEY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4401CEY-T1_GE3?

For technical support, including SQ4401CEY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4401CEY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4401CEY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4401CEY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4401CEY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4401CEY-T1_GE3?

All SQ4401CEY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4401CEY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4401CEY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4401CEY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …