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Vishay Siliconix SQ4401EY-T1_GE3
- Part No.:
- SQ4401EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4401EY-T1_GE3.pdf
- Description:
- MOSFET P-CH 40V 17.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:10,651
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Product details
Overview
SQ4401EY-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -40 V VDS, 17.3 A continuous drain current at 25 °C, and 0.014 Ω RDS(on) at VGS = -10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, body electronics, and power distribution modules.
For engineers reviewing the SQ4401EY-T1_GE3 datasheet, SQ4401EY-T1_GE3 pinout, SQ4401EY-T1_GE3 application, or SQ4401EY-T1_GE3 equivalent, key selection criteria include its -40 V rating, low RDS(on) at -4.5 V gate drive, 100 % UIS testing, SO-8 thermal performance (RthJA = 85 °C/W), and automotive qualification status.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and high avalanche energy (EAS = 45 mJ). Its gate threshold voltage range (-1.5 V to -2.5 V) ensures robust turn-on with standard automotive logic-level drivers.
The device features integrated source-drain diode with VSD = -0.8 V at -2.7 A and supports pulsed drain currents up to -69 A. Thermal design is enabled by validated junction-to-foot resistance (RthJF = 21 °C/W) and SO-8 PCB-mount transient impedance data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection |
| RDS(on) @ VGS = -10 V | 0.014 Ω - Enables <1.5 W conduction loss at 10.5 A, critical for thermally constrained modules |
| RDS(on) @ VGS = -4.5 V | 0.023 Ω - Ensures reliable switching with standard 5 V microcontroller GPIOs |
| ID (continuous) | -17.3 A @ TC = 25 °C - Supports high-current loads like fuel pumps and HVAC actuators |
| EAS | 45 mJ - Withstands inductive kickback from solenoids and motors without external snubbers |
| TJ max | +175 °C - Meets under-hood temperature requirements per AEC-Q101 stress test conditions |
| Qg | 74 nC (typ) - Optimized for fast, low-loss switching in 10–100 kHz PWM applications |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement; 5.0 mm × 4.0 mm footprint, 1.75 mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1/2/3/8 internally bonded to reduce source inductance |
| 4 | Gate (G) | Control terminal; requires ≤±20 V drive; Rg = 1.16–3.21 Ω limits ringing |
| 5, 6, 7 | Drain (D) | Power output node; pins 5/6/7 and exposed pad form low-inductance, high-current path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST per Rev. D test plan |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Enables 23 % lower RDS(on) at -4.5 V vs. planar P-channel equivalents in same SO-8 footprint |
| Exposed drain pad | Reduces RthJA by ~30 % vs. standard SO-8; enables 2.4 W dissipation at 125 °C case temperature |
Applications
| Engine Control Unit (ECU) Power Switching | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side load switching for fuel injector drivers and ignition coil pre-drivers in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V rail delivery with fast turn-off (<85 ns fall time) to prevent misfire. Use Value: 0.023 Ω RDS(on) at -4.5 V enables direct MCU GPIO drive; 45 mJ EAS absorbs coil flyback without clamping diodes. | Use Scenario: Centralized power distribution for door locks, window lifters, and interior lighting in BCMs. IC Role / Device Role / Timing Role: Load switch managing up to 17.3 A peak current per channel with overtemperature shutdown via TJ sensing. Use Value: +175 °C rated junction allows operation near HVAC ducts; SO-8 thermal metrics support 2.4 W at 125 °C case. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Control |
Use Scenario: Reverse-polarity and overvoltage protection for 12 V camera modules in front/rear ADAS sensors. IC Role / Device Role / Timing Role: P-channel MOSFET used in active OR-ing configuration with fast fault response (<100 ns turn-off). Use Value: -40 V VDS withstands load dump transients; -1.5 V to -2.5 V VGS(th) ensures clean turn-on during cold-crank (6.5 V battery). | Use Scenario: Phase-leg high-side switch in 3-phase EPS motor driver inverters. IC Role / Device Role / Timing Role: Synchronized switching element with 74 nC Qg enabling efficient 20 kHz PWM commutation. Use Value: Low Ciss (3400–4250 pF) minimizes gate drive losses; RthJF = 21 °C/W supports heatsinkless layout in compact EPS housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package; higher RDS(on) (0.3 Ω @ -10 V); no AEC-Q101 qualification | Non-automotive industrial switching only; requires heatsink for >3 A loads | Select when cost-sensitive non-automotive designs need through-hole mounting |
| DMT4001SPS-13 | SO-8; -40 V; RDS(on) = 0.015 Ω @ -10 V; AEC-Q101 qualified; slightly higher Qg (82 nC) | Same automotive use cases but with marginally slower switching and identical thermal envelope | Choose if alternate supply chain diversification is required without layout change |
Compared with SQ4401EY-T1_GE3, IRF9530NPbF lacks automotive qualification and thermal efficiency, while DMT4001SPS-13 offers functionally equivalent performance with minor gate charge trade-off-both require validation for specific ECU/BCM thermal profiles.
Availability
SQ4401EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine management systems, and ADAS sensor protection requiring stable component supply across extended temperature and lifecycle demands.
Supply support for SQ4401EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and automotive-grade performance.
The SQ4401EY-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems where AEC-Q101 compliance, thermal resilience, and low RDS(on) at logic-level gate drive are mandatory.
FAQ
What is the maximum continuous drain current rating for SQ4401EY-T1_GE3 at 125 °C case temperature?
The SQ4401EY-T1_GE3 supports -10 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package and must be applied in thermal design calculations for engine bay applications where ambient temperatures exceed 85 °C. The SQ4401EY-T1_GE3 maintains safe operation within its +175 °C junction limit under these conditions.
Does SQ4401EY-T1_GE3 have an integrated body diode, and what is its forward voltage?
Yes, the SQ4401EY-T1_GE3 includes an inherent source-drain body diode with VSD = -0.8 V (typ) at IF = -2.7 A and VGS = 0 V. This diode is rated for pulsed current up to -69 A and supports freewheeling in inductive loads such as solenoids and motors. The SQ4401EY-T1_GE3 diode exhibits soft recovery characteristics suitable for automotive PWM circuits without external snubbing.
Is SQ4401EY-T1_GE3 compatible with lead-free reflow soldering processes?
Yes, SQ4401EY-T1_GE3 is lead (Pb)-free and halogen-free, qualified for standard JEDEC J-STD-020D reflow profiles with peak temperature up to 260 °C. The SO-8 package meets IPC/JEDEC specifications for moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60 % RH. The SQ4401EY-T1_GE3 die attach and wire bond construction ensure reliability through multiple reflow cycles.
What is the gate-source leakage current specification for SQ4401EY-T1_GE3 at maximum rated voltage?
The SQ4401EY-T1_GE3 specifies gate-source leakage current (IGSS) of ±100 nA maximum at VGS = ±20 V and TJ = 25 °C. This low leakage ensures minimal gate drive power loss and stable biasing in high-impedance gate networks typical of automotive microcontroller interfaces. The SQ4401EY-T1_GE3 maintains this specification across its full operating temperature range per qualification testing.
How does the avalanche energy rating of SQ4401EY-T1_GE3 impact circuit protection design?
The SQ4401EY-T1_GE3 is rated for 45 mJ single-pulse avalanche energy (EAS), verified by 100 % UIS testing. This allows the SQ4401EY-T1_GE3 to safely absorb inductive energy from loads like fuel injectors or relays without external protection components, reducing BOM count and PCB area. Designers must verify that actual circuit L·I²/2 does not exceed 45 mJ under worst-case switching conditions.
SQ4401EY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 115 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4250 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.14W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4401EY-T1_GE3 FAQ
1.How can I place an order for SQ4401EY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4401EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4401EY-T1_GE3 reliable?
The price and inventory of SQ4401EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4401EY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4401EY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4401EY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4401EY-T1_GE3?
SQ4401EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4401EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4401EY-T1_GE3?
For technical support, including SQ4401EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4401EY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4401EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4401EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4401EY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4401EY-T1_GE3?
All SQ4401EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4401EY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4401EY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4401EY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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