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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4410EY-T1_BE3

Name: SQ4410EY-T1_BE3
Brand: Vishay Siliconix
SKU: SQ4410EY-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4410EY-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4410EY-T1_BE3.pdf

Description:: MOSFET N-CH 30V 15A 8SOIC

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Product details

Overview

SQ4410EY-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET in SO-8 package, delivering R_DS(on) = 0.012 Ω at V_GS = 10 V and 15 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in engine control units and transmission modules.

For engineers reviewing the SQ4410EY-T1_BE3 datasheet, SQ4410EY-T1_BE3 pinout, SQ4410EY-T1_BE3 application, or SQ4410EY-T1_BE3 equivalent, this page provides verified thermal resistance (R_thJF = 30 °C/W), gate charge (Q_g = 35 nC typ), avalanche energy rating (E_AS = 72 mJ), and SO-8 terminal mapping - all critical for high-reliability 12 V automotive load switching designs.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with Q_gd = 5.4 nC and t_f = 8–12 ns. Its 100 % R_g and UIS testing ensures robustness against gate oscillation and unclamped inductive switching stress in motor drivers and solenoid controls.

The device features a built-in body diode with V_SD = 0.72 V typ at I_F = 2.3 A and supports pulsed drain current up to 60 A. Thermal design is enabled by validated junction-to-foot (R_thJF = 30 °C/W) and junction-to-ambient (R_thJA = 90 °C/W) metrics on standard 1" FR4 PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V automotive systems with load dump margin
R_DS(on) @ V_GS = 10 V	0.012 Ω - Enables <1.2 W conduction loss at 10 A, reducing heatsink requirements
R_DS(on) @ V_GS = 4.5 V	0.020 Ω - Supports logic-level drive from 3.3 V/5 V microcontrollers without level shifters
I_D Continuous @ T_C = 25 °C	15 A - Sustains high-current loads such as fuel pumps and cooling fans
E_AS	72 mJ - Withstands repetitive inductive kickback in relay and motor coil switching
T_J Operating Range	−55 to +175 °C - Validated for under-hood environments including turbocharger zones
Q_g	35 nC typ - Enables efficient gate driving with <1 W average gate power at 100 kHz

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; pins 1–4 internally bonded to reduce source inductance
5, 6, 7, 8	Drain (D)	Power output node; pins 5–8 tied to exposed drain pad for thermal and current handling
4	Gate (G)	Single gate input; pin 4 only - not shared with source - enables clean gate drive routing

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD
100 % R_g tested	Ensures gate resistance ≤ 2 Ω, preventing unintended oscillation during fast switching
100 % UIS tested	Guarantees single-pulse avalanche capability up to 38 A and 72 mJ without failure
TrenchFET® technology	Delivers 25 % lower R_DS(on) vs. planar MOSFETs of same die size, improving power density
High-temperature operation	Specified R_DS(on) up to +175 °C enables placement near heat sources without derating

Applications

Engine Control Unit (ECU) Load Switching	Transmission Control Module (TCM) Solenoid Drive
Use Scenario: Switching 12 V power to injectors, ignition coils, and idle air control valves in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by MCU GPIO with PWM capability. Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 10–15 A pulses; AEC-Q101 qualification ensures reliability over 15-year vehicle life.	Use Scenario: Driving hydraulic solenoids in automatic transmissions requiring precise 10–20 ms on/off timing. IC Role / Device Role / Timing Role: Low-side switch interfacing with transmission controller ASICs via isolated gate drivers. Use Value: Fast fall time (8–12 ns) and low Q_gd enable accurate solenoid current shaping; 175 °C rating allows mounting directly on TCM PCB near solenoid connectors.
Electric Power Steering (EPS) Motor Phase Switch	Body Control Module (BCM) Fan/Pump Control
Use Scenario: Half-bridge phase leg in 12 V EPS motor drivers, handling bidirectional current up to 15 A. IC Role / Device Role / Timing Role: N-channel MOSFET in low-side position of H-bridge, synchronized with complementary high-side driver. Use Value: Low C_iss (1906–2385 pF) and Q_g reduce switching losses at 20–50 kHz PWM; R_thJF = 30 °C/W enables direct thermal coupling to copper pour.	Use Scenario: Controlling radiator cooling fans, HVAC blowers, and washer pumps in BCM subsystems. IC Role / Device Role / Timing Role: Single-ended load switch activated by LIN or CAN-controlled microcontroller outputs. Use Value: Logic-level compatibility (R_DS(on) = 0.020 Ω @ 4.5 V) eliminates need for external level shifters; integrated body diode handles back-EMF without external flyback diode.

Engine Control Unit (ECU) Load Switching

Transmission Control Module (TCM) Solenoid Drive

Use Scenario: Switching 12 V power to injectors, ignition coils, and idle air control valves in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by MCU GPIO with PWM capability.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 10–15 A pulses; AEC-Q101 qualification ensures reliability over 15-year vehicle life.

Use Scenario: Driving hydraulic solenoids in automatic transmissions requiring precise 10–20 ms on/off timing.

IC Role / Device Role / Timing Role: Low-side switch interfacing with transmission controller ASICs via isolated gate drivers.

Use Value: Fast fall time (8–12 ns) and low Q_gd enable accurate solenoid current shaping; 175 °C rating allows mounting directly on TCM PCB near solenoid connectors.

Electric Power Steering (EPS) Motor Phase Switch

Body Control Module (BCM) Fan/Pump Control

Use Scenario: Half-bridge phase leg in 12 V EPS motor drivers, handling bidirectional current up to 15 A.

IC Role / Device Role / Timing Role: N-channel MOSFET in low-side position of H-bridge, synchronized with complementary high-side driver.

Use Value: Low C_iss (1906–2385 pF) and Q_g reduce switching losses at 20–50 kHz PWM; R_thJF = 30 °C/W enables direct thermal coupling to copper pour.

Use Scenario: Controlling radiator cooling fans, HVAC blowers, and washer pumps in BCM subsystems.

IC Role / Device Role / Timing Role: Single-ended load switch activated by LIN or CAN-controlled microcontroller outputs.

Use Value: Logic-level compatibility (R_DS(on) = 0.020 Ω @ 4.5 V) eliminates need for external level shifters; integrated body diode handles back-EMF without external flyback diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, R_DS(on) = 0.0022 Ω @ 10 V, 220 A P_D, PowerFLAT 5x6 package	Higher current capacity but larger footprint; requires different PCB layout and thermal interface	Select when >15 A continuous current or >100 W dissipation is required; not drop-in compatible due to package and pinout mismatch
IRF3709ZCPBF	30 V, R_DS(on) = 0.0075 Ω @ 10 V, TO-220AB package, non-AEC-Q101	Higher R_thJA (62 °C/W), no automotive qualification, through-hole mounting	Acceptable for non-automotive industrial 12 V switching where AEC-Q101 is not mandated; requires mechanical redesign for SO-8 replacement

Compared with STL220N3LLH6 and IRF3709ZCPBF, SQ4410EY-T1_BE3 offers optimal balance of SO-8 footprint compatibility, AEC-Q101 compliance, and thermal performance (R_thJF = 30 °C/W) for space-constrained automotive modules where qualification and reliability outweigh raw R_DS(on) minimization.

Availability

SQ4410EY-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, transmission control modules, electric power steering systems, and body control modules requiring stable component supply across extended automotive production lifecycles.

Supply support for SQ4410EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ4410EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability 12 V power switching in engine, transmission, and chassis control systems.

FAQ

What is the maximum continuous drain current rating for SQ4410EY-T1_BE3 at 125 °C case temperature?

The SQ4410EY-T1_BE3 supports 9 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and must be applied in thermal simulations using R_thJA = 90 °C/W and R_thJF = 30 °C/W values confirmed in the datasheet. SQ4410EY-T1_BE3 maintains full AEC-Q101 compliance across this range.

Is SQ4410EY-T1_BE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQ4410EY-T1_BE3 is fully AEC-Q101 qualified. The qualification includes high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and human-body-model electrostatic discharge (HBM ESD) per JESD22-A114. All units undergo 100 % R_g and unclamped inductive switching (UIS) screening per the datasheet. SQ4410EY-T1_BE3 carries Vishay's material categorization per doc#99912.

What is the typical total gate charge (Q_g) of SQ4410EY-T1_BE3, and how does it impact gate driver selection?

The typical total gate charge (Q_g) of SQ4410EY-T1_BE3 is 35 nC at V_GS = 10 V, with Q_gd = 5.4 nC and Q_gs = 4.9 nC. This value determines peak gate current and driver power dissipation: for 100 kHz PWM, average gate power is ~0.875 mW per MHz of switching frequency. SQ4410EY-T1_BE3 gate driver circuits should support ≥1 A peak current to achieve <20 ns rise/fall times.

Does SQ4410EY-T1_BE3 have an integrated body diode, and what are its forward voltage characteristics?

Yes, SQ4410EY-T1_BE3 includes a monolithic body diode rated for 4.5 A continuous source current and 60 A pulsed current. At I_F = 2.3 A and T_J = 25 °C, V_SD is 0.72 V typical (max 1.2 V). The diode is optimized for reverse recovery in inductive switching - no external flyback diode is needed for fan, solenoid, or relay loads. SQ4410EY-T1_BE3 body diode parameters are fully characterized in the datasheet Section 3.

What is the safe operating area (SOA) limitation for SQ4410EY-T1_BE3 in single-pulse DC conditions?

In single-pulse DC operation, SQ4410EY-T1_BE3 SOA is limited by R_DS(on) at V_DS < 5 V and by maximum power dissipation (P_D = 5 W at T_C = 25 °C) above that. At V_DS = 10 V, maximum sustainable I_D is ~12 A; at V_DS = 20 V, it drops to ~5 A. The SOA curve on page 5 of the datasheet confirms these boundaries. SQ4410EY-T1_BE3 must be operated within this envelope to avoid thermal runaway or bond-wire fusing.

SQ4410EY-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2385 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4410EY-T1_BE3 FAQ

1.How can I place an order for SQ4410EY-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4410EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4410EY-T1_BE3 reliable?

The price and inventory of SQ4410EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4410EY-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ4410EY-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4410EY-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4410EY-T1_BE3?

SQ4410EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4410EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4410EY-T1_BE3?

For technical support, including SQ4410EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4410EY-T1_BE3 requirements.

6.How does Aetrix verify that SQ4410EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ4410EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4410EY-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ4410EY-T1_BE3?

All SQ4410EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4410EY-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4410EY-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ4410EY-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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