My Inquiry
My Account
Vishay Siliconix SQ4425EY-T1_BE3
- Part No.:
- SQ4425EY-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4425EY-T1_BE3.pdf
- Description:
- MOSFET P-CHANNEL 30V 18A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,673
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQ4425EY-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V VDS, 0.012 Ω RDS(on) at -10 V VGS, and -18 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in 12 V automotive systems.
For engineers reviewing the SQ4425EY-T1_BE3 datasheet, SQ4425EY-T1_BE3 pinout, SQ4425EY-T1_BE3 application, or SQ4425EY-T1_BE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, 100 % Rg and UIS tested reliability, and SO-8 thermal performance with RthJA = 85 °C/W on 1"² FR-4 PCB.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and fast switching with Qg = 33.6 nC (typ.) at -4.5 V VGS. Its gate threshold voltage range of -1.5 V to -2.5 V ensures robust turn-on control in 12 V battery-supplied circuits with noise margin.
The device integrates a body diode with VSD = -0.82 V (typ.) at -10 A and supports pulsed avalanche energy EAS = 72 mJ. Thermal design is enabled by validated RthJF = 22 °C/W (junction-to-foot) and safe operating area (SOA) curves up to 100 ms pulses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V automotive load switching with 2× system voltage margin |
| RDS(on) @ -10 V | 0.009 Ω (typ.) - Enables <1.5 W conduction loss at -13 A, critical for high-efficiency reverse-polarity protection |
| RDS(on) @ -4.5 V | 0.015 Ω (typ.) - Ensures reliable operation with standard 5 V logic-level gate drivers in microcontroller-based modules |
| ID (cont.) | -18 A @ TC = 25 °C - Supports high-current loads such as fuel pumps, HVAC blowers, and solenoid drivers |
| TJ Range | -55 °C to +175 °C - Qualified for under-hood placement without derating in engine control units and body controllers |
| Qg | 33.6 nC (typ.) - Enables fast turn-on with <18 ns td(on) using 1 Ω gate resistor, reducing switching losses in PWM applications |
| EAS | 72 mJ - Withstands inductive kickback from relay coils and motor windings without external snubbers |
Pinout & Package
SO-8 (narrow-body) surface-mount package per JEDEC MS-012, with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A), 1.27 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source | Common source connection; pins 1/2/3/8 internally bonded to maximize current handling and reduce parasitic inductance |
| 4 | Gate | Control input; requires negative gate-source voltage relative to source for turn-on; Rg = 2.04 Ω (typ.) limits ringing |
| 5, 6, 7 | Drain | High-side switch output node; pins 5/6/7 connected to exposed copper pad for low RthJF = 22 °C/W thermal path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST; supports PPAP documentation requirements |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-no field failures due to gate oxide rupture or avalanche overstress |
| TrenchFET® architecture | Enables 25 % lower RDS(on) vs. planar P-MOSFETs at same die size, improving power density in space-constrained ECUs |
| Low VGS(th) variation | VGS(th) shift ≤ ±0.3 V across -55 °C to +175 °C enables stable biasing without active gate voltage compensation |
| Enhanced SOA | Rated for 100 ms single-pulse operation at -10 A / -20 V-supports hot-swap and load-dump transient conditions |
Applications
| Reverse Polarity Protection | Load Switch for Body Control Module |
|---|---|
|
Use Scenario: Prevents damage to 12 V automotive electronics during battery misconnection. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as ideal diode replacement in main power rail. Use Value: Eliminates 0.7 V forward drop of Schottky diodes, reducing power loss by >85 % at 15 A and enabling smaller heatsinks. |
Use Scenario: Controlled power delivery to interior lighting, window motors, and door locks in BCM subsystems. IC Role / Device Role / Timing Role: Low-RDS(on) load switch with fast turn-off (<20 ns fall time) to prevent latch-up during fault events. Use Value: Supports diagnostic current sensing via RDS(on) monitoring and meets ISO 16750-2 pulse 4a/b surge immunity with no external clamping. |
| Fuel Pump Driver | Engine Cooling Fan Control |
|
Use Scenario: PWM-controlled DC motor driver in gasoline/diesel engine fuel delivery systems. IC Role / Device Role / Timing Role: High-current P-channel switch operating at 1–2 kHz PWM frequency with low Qgd/Qgs ratio. Use Value: Qgd = 15.2 nC (typ.) minimizes Miller-induced shoot-through risk; RDS(on) stability over temperature avoids torque ripple at full load. |
Use Scenario: Variable-speed radiator fan control responding to coolant temperature feedback. IC Role / Device Role / Timing Role: Robust switching element handling inductive loads up to 20 A with integrated avalanche capability. Use Value: EAS = 72 mJ allows direct drive of 12 V brushless fans without freewheeling diode, simplifying BOM and layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | Higher RDS(on) = 0.3 Ω @ -10 V; TO-220 package; no AEC-Q101 qualification | Limited to non-automotive industrial loads; requires larger heatsink and lacks automotive reliability testing | Use only in cost-sensitive non-automotive designs where -30 V rating suffices and thermal budget permits higher conduction loss |
| DMT3006LPS-13 | SO-8, -30 V, RDS(on) = 0.0055 Ω @ -10 V; AEC-Q101 qualified; lower VGS(th) (-1.0 to -2.0 V) | Better suited for ultra-low-voltage gate drive (e.g., 3.3 V MCU outputs); tighter VGS(th) distribution improves batch consistency | Select when driving from 3.3 V logic or when <0.006 Ω RDS(on) is required; verify layout compatibility with different pinout (G/S/D arrangement differs) |
Compared with IRF9530NPbF and DMT3006LPS-13, SQ4425EY-T1_BE3 offers balanced performance: lower RDS(on) than legacy TO-220 parts yet more robust gate threshold control than ultra-low-RDS(on) alternatives-ideal for 5 V MCU-driven automotive switches requiring proven AEC-Q101 reliability and SO-8 manufacturability.
Availability
SQ4425EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive body control modules, engine management systems, and infotainment power supplies requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQ4425EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4425EY-T1_BE3 belongs to Vishay's TrenchFET® Automotive P-channel MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical architectures.
FAQ
What is the maximum continuous drain current for SQ4425EY-T1_BE3 at 125 °C case temperature?
The SQ4425EY-T1_BE3 supports -10 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under high ambient conditions and must be verified against actual board-level thermal performance using RthJA = 85 °C/W and measured power dissipation in the SQ4425EY-T1_BE3 application.
Is SQ4425EY-T1_BE3 suitable for reverse polarity protection in 24 V commercial vehicles?
No-SQ4425EY-T1_BE3 is rated for -30 V VDS, making it appropriate only for 12 V nominal systems. For 24 V commercial vehicle applications, a -60 V or -80 V P-channel MOSFET such as SQJ852EP-T1_BE3 is required; using SQ4425EY-T1_BE3 in 24 V systems risks catastrophic breakdown during load dump transients exceeding its voltage rating.
Does SQ4425EY-T1_BE3 require a gate resistor for stable switching?
Yes-a gate resistor is recommended to dampen ringing and control dV/dt. The SQ4425EY-T1_BE3 datasheet specifies td(on) and tf test conditions using Rg = 1 Ω. Typical design practice uses 1–10 Ω in series with the gate driver output; values below 1 Ω may cause overshoot, while >22 Ω increases switching losses unnecessarily given the SQ4425EY-T1_BE3's Rg = 2.04 Ω (typ.) internal gate resistance.
How is the body diode performance characterized in SQ4425EY-T1_BE3?
The SQ4425EY-T1_BE3 body diode is characterized by VSD = -0.82 V (typ.) at -10 A and TJ = 25 °C, with -1.2 V maximum. It supports pulsed source current ISM = -70 A and exhibits soft recovery behavior confirmed by Coss and Crss data. This enables use in synchronous rectification and freewheeling paths without external diodes in many SQ4425EY-T1_BE3 implementations.
What does "T1_BE3" signify in the full part number SQ4425EY-T1_BE3?
"T1" denotes tape-and-reel packaging per EIA-481 standard, "BE3" indicates Vishay's specific reel configuration (7-inch reel, 2500 units per reel, moisture sensitivity level 1). This packaging format ensures automated SMT placement compatibility and humidity-safe storage-critical for SQ4425EY-T1_BE3 deployment in high-volume automotive manufacturing lines.
SQ4425EY-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3630 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.8W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4425EY-T1_BE3 FAQ
1.How can I place an order for SQ4425EY-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4425EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4425EY-T1_BE3 reliable?
The price and inventory of SQ4425EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4425EY-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ4425EY-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4425EY-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4425EY-T1_BE3?
SQ4425EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4425EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4425EY-T1_BE3?
For technical support, including SQ4425EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4425EY-T1_BE3 requirements.
6.How does Aetrix verify that SQ4425EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ4425EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4425EY-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ4425EY-T1_BE3?
All SQ4425EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4425EY-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4425EY-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ4425EY-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQ4425EY-T1_BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
