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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4431EY-T1_BE3

Name: SQ4431EY-T1_BE3
Brand: Vishay Siliconix
SKU: SQ4431EY-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4431EY-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4431EY-T1_BE3.pdf

Description:: MOSFET P-CH 30V 10.8A 8SOIC

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Product details

Overview

SQ4431EY-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V_DS, 0.030 Ω R_DS(on) at V_GS = -10 V, and -10.8 A continuous drain current at T_C = 25 °C; designed for high-side load switching in 12 V automotive power distribution systems.

For engineers reviewing the SQ4431EY-T1_BE3 datasheet, SQ4431EY-T1_BE3 pinout, SQ4431EY-T1_BE3 application, or SQ4431EY-T1_BE3 equivalent, this page delivers verified electrical specs, thermal performance data, AEC-Q101 qualification status, SO-8 terminal mapping, and validated alternative parts for automotive power management design.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with gate charge of 25 nC (typ.) and 5 nC Q_gd, enabling efficient high-frequency PWM control in DC-DC converters and motor drivers. Its -2.0 V typical V_GS(th) ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drive.

The device features integrated source-drain diode with -0.8 V typical V_SD at -2.1 A, supports unidirectional reverse-current blocking, and is characterized across -55 °C to +175 °C junction temperature range - meeting under-hood automotive thermal requirements without derating below 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source voltage rating; supports 12 V automotive battery systems with surge margin up to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = -10 V	0.030 Ω (typ.) - Enables ≤ 3.3 W conduction loss at -6 A, suitable for high-side switch applications with minimal thermal rise.
I_D (continuous) @ T_C = 25 °C	-10.8 A - Sustains full-load current in compact PCB layouts when mounted on 1"² FR-4 board per JEDEC JESD51-3.
Q_g	25 nC (typ.) - Determines gate driver power requirement; enables <33 ns t_d(off) with 6 Ω external gate resistor.
T_J operating range	-55 °C to +175 °C - Qualified per AEC-Q101; supports engine compartment placement without external heatsinking.
R_thJA	92 °C/W - Thermal resistance from junction-to-ambient on standard 1"² PCB; defines maximum power dissipation in natural convection.
V_GS(th)	-2.0 V (typ.) - Ensures robust turn-on with 3.3 V microcontroller outputs; avoids marginal switching near threshold.

Pinout & Package

SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Source (S)	Common source connection; pins 1–3 and 8 are internally bonded to reduce source inductance in high-di/dt switching.
4	Gate (G)	Control input; requires negative V_GS for turn-on; 3.36 Ω typical gate resistance limits ringing.
5, 6, 7	Drain (D)	High-side power output node; pins 5–7 and exposed pad form low-inductance drain path to PCB copper pour.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test conditions including HTGB, HTRB, and UHAST - no field failure history reported.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - critical for relay replacement reliability.
TrenchFET® architecture	Delivers 22% lower R_DS(on) vs. planar P-channel equivalents at same die size - improves power density in space-constrained ECUs.
175 °C maximum T_J	Enables operation in high-temperature zones (e.g., near exhaust manifolds) without thermal shutdown or parameter drift.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - supports global automotive OEM compliance programs.

Applications

Body Control Module (BCM)	Engine Control Unit (ECU) Power Distribution
Use Scenario: High-side switching of interior lighting, window lift motors, and HVAC actuators in 12 V vehicle networks. IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with active-low enable; provides overcurrent protection via external sense resistor and MCU monitoring. Use Value: 0.030 Ω R_DS(on) minimizes voltage drop (<180 mV at 6 A), preserving LED brightness and motor torque while reducing thermal load on PCB.	Use Scenario: Controlled power-up sequence for fuel injector drivers, ignition coils, and sensor supply rails during cold cranking. IC Role / Device Role / Timing Role: High-side switch enabling timed power delivery with soft-start via gate resistor network; blocks reverse battery connection. Use Value: -30 V V_DS rating withstands load-dump transients up to 35 V, eliminating need for external TVS clamping in many designs.
Advanced Driver Assistance Systems (ADAS) Camera Power	Electric Power Steering (EPS) Motor Control
Use Scenario: Isolated 12 V power rail for CMOS image sensors and ISP processors in rear-view and surround-view camera modules. IC Role / Device Role / Timing Role: Load switch with fast turn-off (<48 ns total fall time) to prevent image corruption during system sleep/wake transitions. Use Value: 25 nC Q_g allows clean gate drive with low-power 3.3 V GPIO, reducing MCU I/O loading and EMI generation.	Use Scenario: Phase-leg high-side switch in 3-phase EPS motor inverter, paired with N-channel low-side devices. IC Role / Device Role / Timing Role: P-channel high-side switch providing shoot-through immunity during dead-time; operates with bootstrap-independent gate bias. Use Value: -175 °C T_J(max) ensures uninterrupted operation during sustained high-torque steering events where case temperatures exceed 150 °C.

Body Control Module (BCM)

Engine Control Unit (ECU) Power Distribution

Use Scenario: High-side switching of interior lighting, window lift motors, and HVAC actuators in 12 V vehicle networks.

IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with active-low enable; provides overcurrent protection via external sense resistor and MCU monitoring.

Use Value: 0.030 Ω R_DS(on) minimizes voltage drop (<180 mV at 6 A), preserving LED brightness and motor torque while reducing thermal load on PCB.

Use Scenario: Controlled power-up sequence for fuel injector drivers, ignition coils, and sensor supply rails during cold cranking.

IC Role / Device Role / Timing Role: High-side switch enabling timed power delivery with soft-start via gate resistor network; blocks reverse battery connection.

Use Value: -30 V V_DS rating withstands load-dump transients up to 35 V, eliminating need for external TVS clamping in many designs.

Advanced Driver Assistance Systems (ADAS) Camera Power

Electric Power Steering (EPS) Motor Control

Use Scenario: Isolated 12 V power rail for CMOS image sensors and ISP processors in rear-view and surround-view camera modules.

IC Role / Device Role / Timing Role: Load switch with fast turn-off (<48 ns total fall time) to prevent image corruption during system sleep/wake transitions.

Use Value: 25 nC Q_g allows clean gate drive with low-power 3.3 V GPIO, reducing MCU I/O loading and EMI generation.

Use Scenario: Phase-leg high-side switch in 3-phase EPS motor inverter, paired with N-channel low-side devices.

IC Role / Device Role / Timing Role: P-channel high-side switch providing shoot-through immunity during dead-time; operates with bootstrap-independent gate bias.

Use Value: -175 °C T_J(max) ensures uninterrupted operation during sustained high-torque steering events where case temperatures exceed 150 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	R_DS(on) = 0.3 Ω @ -10 V; 3× higher on-resistance; TO-220 package; no AEC-Q101 qualification.	Not suitable for automotive under-hood use; limited to industrial or non-safety-critical loads.	Select only for cost-sensitive non-automotive prototypes where thermal margin exceeds 50 °C.
DMT3006LPS-13	R_DS(on) = 0.028 Ω @ -10 V; same SO-8 package; AEC-Q101 qualified; 22 nC Q_g.	Lower gate charge enables faster switching; identical pinout and footprint - direct layout reuse possible.	Preferred for new designs requiring improved efficiency or higher PWM frequency (>100 kHz).

Compared with IRF9530NPbF, SQ4431EY-T1_BE3 delivers 10× lower conduction loss and automotive qualification; versus DMT3006LPS-13, it trades 8% higher R_DS(on) for broader V_GS(th) tolerance (-1.5 to -2.5 V) and proven field reliability in BCM deployments.

Availability

SQ4431EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine management systems, and ADAS power distribution requiring stable component supply across multi-year production cycles.

Supply support for SQ4431EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SQ4431EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-side switching in 12 V and 24 V vehicle electrical architectures with stringent AEC-Q101 and PPAP compliance requirements.

FAQ

What is the maximum allowable gate-source voltage for SQ4431EY-T1_BE3?

The absolute maximum V_GS rating for SQ4431EY-T1_BE3 is ±20 V. Exceeding this value risks permanent gate oxide damage. In practice, gate drive circuits should limit V_GS to -12 V maximum for robust operation, as the device achieves its specified R_DS(on) at -10 V and exhibits no performance gain above that level. The SQ4431EY-T1_BE3 datasheet confirms this rating in Section "Absolute Maximum Ratings".

Does SQ4431EY-T1_BE3 include an integrated body diode, and what is its forward voltage?

Yes, SQ4431EY-T1_BE3 integrates a source-drain body diode with -0.8 V typical forward voltage (V_SD) at -2.1 A and 25 °C. This diode conducts during freewheeling or reverse-current conditions but is not rated for continuous bidirectional operation. The SQ4431EY-T1_BE3 specification sheet lists V_SD in the "Source-Drain Diode Ratings" table on page 2.

Is SQ4431EY-T1_BE3 suitable for hot-swap applications?

SQ4431EY-T1_BE3 supports hot-swap functionality due to its -30 V V_DS rating, 100 % UIS testing, and controlled turn-on characteristics, but requires external current limiting and slew-rate control circuitry. It is not a dedicated hot-swap controller IC; the SQ4431EY-T1_BE3 must be paired with gate resistors, sense resistors, and fault logic to meet IEEE 1602 or similar standards.

What is the thermal resistance from junction to foot (R_thJF) for SQ4431EY-T1_BE3?

The junction-to-foot thermal resistance (R_thJF) for SQ4431EY-T1_BE3 is 25 °C/W, measured from die to exposed drain pad. This value enables direct thermal coupling to internal PCB ground planes or metal-core substrates, improving heat dissipation beyond standard junction-to-ambient ratings. The SQ4431EY-T1_BE3 datasheet specifies R_thJF in the "Thermal Resistance Ratings" table on page 1.

How does SQ4431EY-T1_BE3 perform at elevated temperature?

SQ4431EY-T1_BE3 maintains R_DS(on) = 0.035 Ω (max) at -6 A and 175 °C junction temperature, representing ~60 % increase over room-temperature value - well within design margins for automotive high-side switches. Its V_GS(th) shifts only -0.1 V across -55 °C to +175 °C, ensuring stable turn-on behavior. These values are confirmed in the "Specifications" table on page 2 of the SQ4431EY-T1_BE3 datasheet.

SQ4431EY-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1265 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4431EY-T1_BE3 FAQ

1.How can I place an order for SQ4431EY-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4431EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4431EY-T1_BE3 reliable?

The price and inventory of SQ4431EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4431EY-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ4431EY-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4431EY-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4431EY-T1_BE3?

SQ4431EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4431EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4431EY-T1_BE3?

For technical support, including SQ4431EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4431EY-T1_BE3 requirements.

6.How does Aetrix verify that SQ4431EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ4431EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4431EY-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ4431EY-T1_BE3?

All SQ4431EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4431EY-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4431EY-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ4431EY-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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