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Vishay Siliconix SQ4435EY-T1_BE3
- Part No.:
- SQ4435EY-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4435EY-T1_BE3.pdf
- Description:
- MOSFET P-CHANNEL 30V 15A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,494
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Product details
Overview
SQ4435EY-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 0.018 Ω RDS(on) at VGS = -10 V, and -15 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is housed in a surface-mount SO-8 package, designed for high-reliability power switching in engine control units and body electronics.
For engineers reviewing the SQ4435EY-T1_BE3 datasheet, SQ4435EY-T1_BE3 pinout, SQ4435EY-T1_BE3 application, or SQ4435EY-T1_BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design context for automotive power management circuits.
Technical Context
This MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 38.3–58 nC). Its -2.0 V typical gate threshold voltage (VGS(th)) enables robust turn-on with standard 5 V or 3.3 V logic-level gate drivers in high-side configurations.
The device features 100 % Rg and UIS tested units, integrated source-drain diode with -0.84 V typical forward voltage at -8 A, and SO-8 footprint compatibility with JEDEC MS-012 mechanical standards. Thermal resistance from junction-to-case is 22 °C/W, supporting high-power density layouts when mounted on FR-4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V automotive systems with load dump margin |
| RDS(on) @ VGS = -10 V | 0.018 Ω - Enables <1.5 W conduction loss at -8 A, critical for thermally constrained ECUs |
| ID (continuous) | -15 A @ TC = 25 °C - Supports high-current loads such as fuel pump drivers or HVAC actuators |
| Qg | 38.3–58 nC - Determines gate drive power requirement and switching speed in PWM applications |
| TJ range | -55 to +175 °C - Qualified for under-hood operation without derating in modern ICE and hybrid vehicles |
| RthJA | 85 °C/W - Defines thermal limit for PCB-mounted operation without heatsink in compact modules |
| VGS(th) | -1.5 to -2.5 V - Ensures reliable turn-on with low-voltage microcontrollers and avoids false triggering |
Pinout & Package
SO-8 narrow-body package per JEDEC MS-012, 5.0 mm × 4.0 mm × 1.75 mm height, lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1/2/3/8 internally bonded for low-inductance, high-current return path |
| 4 | Gate (G) | Control input; requires ≤ ±20 V rating and careful ESD handling during assembly |
| 5, 6, 7, D | Drain (D) | Power output node; pins 5/6/7/D tied together for thermal and current sharing in high-power switching |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST - no additional qualification needed for Tier 1 designs |
| 100 % Rg tested | Ensures consistent gate drive timing across production lots, critical for synchronized multi-MOSFET systems |
| 100 % UIS tested | Guarantees ruggedness against inductive switching stress (e.g., solenoid or motor turn-off) without external snubbers |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs, improving efficiency in 10–100 kHz PWM |
| Source-drain diode | Integrated body diode with -0.84 V VSD at -8 A supports freewheeling in high-side switch topologies |
Applications
| Engine Control Unit (ECU) Power Switching | Body Control Module (BCM) Load Driving |
|---|---|
Use Scenario: High-side switching of fuel injectors, ignition coils, and idle air control valves in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET acting as high-side power switch with logic-level gate control and fast turn-off for precise pulse-width modulation. Use Value: Low RDS(on) minimizes self-heating during extended duty cycles; 175 °C rating ensures reliability near hot engine blocks. |
Use Scenario: Driving door locks, window lift motors, and interior lighting in BCMs with centralized power distribution. IC Role / Device Role / Timing Role: High-side load switch enabling individual channel protection, diagnostics, and energy-efficient standby states. Use Value: AEC-Q101 qualification and 100 % UIS testing eliminate need for external flyback diodes and reduce BOM count. |
| Transmission Control Module (TCM) | Advanced Driver Assistance Systems (ADAS) Power Management |
Use Scenario: Controlling solenoid valves and pressure regulators in automatic transmission hydraulic control units. IC Role / Device Role / Timing Role: Robust high-side switch handling repetitive inductive transients with minimal voltage overshoot. Use Value: 25 A single-pulse avalanche current rating absorbs energy from L·di/dt events without failure. |
Use Scenario: Power sequencing and fault-isolated supply enablement for radar sensors, camera modules, and domain controllers. IC Role / Device Role / Timing Role: Protected high-side switch providing controlled ramp-up, overcurrent detection interface, and thermal shutdown signaling. Use Value: Junction temperature monitoring up to 175 °C enables dynamic derating algorithms in thermally dense ADAS enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | Higher RDS(on) (0.06 Ω @ -10 V), TO-220 package, non-AEC-Q101 qualified | Limited to non-automotive industrial use; lacks 175 °C rating and UIS screening | Select only for cost-sensitive non-automotive prototypes where SO-8 footprint is not required |
| DMT3006LPS-13 | Lower RDS(on) (0.0055 Ω @ -10 V), same SO-8, AEC-Q101 qualified but rated only to 150 °C | Better conduction efficiency but reduced thermal headroom in under-hood environments | Prefer for high-efficiency 12 V subsystems operating below 150 °C ambient, e.g., infotainment power rails |
Compared with IRF9530NPBF and DMT3006LPS-13, the SQ4435EY-T1_BE3 uniquely balances 175 °C operation, AEC-Q101 compliance, and SO-8 manufacturability-making it the default choice for thermally demanding, safety-critical automotive high-side switches.
Availability
SQ4435EY-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and transmission control systems requiring stable component supply across long automotive production lifecycles.
Supply support for SQ4435EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4435EY-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET family, engineered specifically for high-reliability, high-temperature power switching in engine, chassis, and safety-critical electronic control units.
FAQ
What is the maximum continuous drain current for SQ4435EY-T1_BE3 at 125 °C case temperature?
The SQ4435EY-T1_BE3 supports -8.7 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and must be applied when ambient or board temperatures exceed 85 °C. Designers should verify actual junction temperature using RthJA = 85 °C/W and layout-specific thermal modeling before finalizing thermal management for the SQ4435EY-T1_BE3.
Is SQ4435EY-T1_BE3 suitable for high-side switch applications with 3.3 V microcontroller gate drive?
Yes - the SQ4435EY-T1_BE3 has a gate threshold voltage range of -1.5 V to -2.5 V, ensuring full enhancement with 3.3 V logic-level gate drive (VGS = -3.3 V). At that bias, RDS(on) is 0.031 Ω (typical), delivering acceptable conduction loss. However, gate drive strength must supply ≥40 nC total charge within required switching time; a dedicated gate driver IC is recommended for >10 kHz PWM to minimize switching losses in the SQ4435EY-T1_BE3.
Does SQ4435EY-T1_BE3 include integrated ESD protection on the gate terminal?
No - the SQ4435EY-T1_BE3 does not feature on-chip ESD protection diodes. Its gate oxide is rated for ±20 V absolute maximum VGS, and gate-source leakage is limited to ±100 nA at ±20 V. During PCB handling and assembly, ESD precautions (e.g., grounded wrist straps, ionized air) are mandatory. External gate resistors (≥10 Ω) and TVS diodes are recommended in production systems to protect the SQ4435EY-T1_BE3 gate from transient overstress.
What is the safe operating area (SOA) limitation for SQ4435EY-T1_BE3 in DC and pulsed conditions?
The SQ4435EY-T1_BE3 SOA curve shows DC operation limited by RDS(on) conduction at VDS < 5 V and by package thermal resistance above that. For 10 ms pulses, it supports -25 A at -10 V; for 100 µs pulses, up to -60 A is allowed. The device is rated for single-pulse avalanche energy of 31 mJ. These boundaries define hard limits for surge, inductive kickback, and short-circuit conditions - exceeding them risks irreversible failure of the SQ4435EY-T1_BE3.
How does the SQ4435EY-T1_BE3 compare to N-channel alternatives in high-side switching configurations?
Unlike N-channel MOSFETs, the SQ4435EY-T1_BE3 enables simple high-side switching without requiring a floating gate driver or charge pump. Its P-channel topology simplifies PCB layout and reduces system cost in 12 V automotive domains. While N-channel devices offer lower RDS(on), the SQ4435EY-T1_BE3's integrated design eliminates level-shifting complexity - making it preferred for space-constrained, cost-sensitive, and thermally aggressive applications where the SQ4435EY-T1_BE3's 0.018 Ω on-resistance meets efficiency targets.
SQ4435EY-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2170 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.8W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4435EY-T1_BE3 FAQ
1.How can I place an order for SQ4435EY-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4435EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4435EY-T1_BE3 reliable?
The price and inventory of SQ4435EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4435EY-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ4435EY-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4435EY-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4435EY-T1_BE3?
SQ4435EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4435EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4435EY-T1_BE3?
For technical support, including SQ4435EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4435EY-T1_BE3 requirements.
6.How does Aetrix verify that SQ4435EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ4435EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4435EY-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ4435EY-T1_BE3?
All SQ4435EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4435EY-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4435EY-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ4435EY-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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