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Vishay Siliconix SQ4435EY-T1_GE3
- Part No.:
- SQ4435EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4435EY-T1_GE3.pdf
- Description:
- MOSFET P-CHANNEL 30V 15A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,260
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Product details
Overview
SQ4435EY-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 0.018 Ω RDS(on) at -10 V VGS, and -15 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a high-reliability load switch in 12 V automotive power distribution systems.
For engineers reviewing the SQ4435EY-T1_GE3 datasheet, SQ4435EY-T1_GE3 pinout, SQ4435EY-T1_GE3 application, or SQ4435EY-T1_GE3 equivalent, key selection criteria include its -30 V VDS, 0.031 Ω RDS(on) at -4.5 V gate drive, SO-8 package thermal resistance (RthJA = 85 °C/W), and 100 % Rg and UIS testing for robustness in automotive transients.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with 38.3 nC total gate charge (typ.) and 9 nC gate-drain charge (typ.) at VGS = -10 V. Its gate threshold voltage range of -1.5 V to -2.5 V ensures stable turn-on under wide temperature and supply variation.
The device features integrated source-drain diode with -0.84 V forward voltage (typ.) at -8 A and supports pulsed avalanche energy of 31 mJ. Thermal design is enabled by RthJF = 22 °C/W (junction-to-case) and validated operation across -55 °C to +175 °C junction range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V automotive battery rail protection and reverse polarity circuits |
| RDS(on) @ VGS = -10 V | 0.018 Ω (max) - Enables <1.5 W conduction loss at -15 A, critical for thermally constrained PCB layouts |
| RDS(on) @ VGS = -4.5 V | 0.031 Ω (max) - Ensures reliable switching with standard 5 V logic-level gate drivers in body control modules |
| ID (continuous) | -15 A @ TC = 25 °C - Supports high-current loads such as HVAC actuators and seat motor drivers |
| Qg | 38.3 nC (typ.) - Determines gate driver sizing and switching loss in PWM-controlled power stages |
| TJ range | -55 °C to +175 °C - Meets under-hood ambient requirements per AEC-Q101 stress test conditions |
| EAS | 31 mJ - Provides margin against inductive switching spikes in solenoid and relay drive applications |
Pinout & Package
SO-8 (narrow-body, MS-012 compliant) surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1–3 and 8 are internally bonded to reduce source inductance in high-di/dt switching |
| 4 | Gate (G) | Control input; requires ≤ ±20 V gate-source voltage; 2–7 Ω gate resistance limits ringing during fast edge transitions |
| 5, 6, 7 | Drain (D) | Power output node; pins 5–7 connect to exposed copper pad for low RthJF = 22 °C/W heat transfer to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including HTOL, TC, UHAST, and mechanical shock per Rev. D test plan |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® technology | Enables lower RDS(on) × Qg figure-of-merit versus planar MOSFETs for improved efficiency in 10–100 kHz switching |
| High-temperature operation | Specified RDS(on) up to +175 °C enables placement near hot components without derating penalties |
| Low VSD body diode | -0.84 V (typ.) forward voltage reduces freewheeling losses in H-bridge and buck converter topologies |
Applications
| Body Control Module (BCM) | Engine Control Unit (ECU) Power Distribution |
|---|---|
Use Scenario: Switching 12 V power to door lock actuators, mirror heaters, and interior lighting. IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO with PWM dimming capability. Use Value: Low RDS(on) minimizes self-heating during sustained 5–10 A loads; AEC-Q101 qualification ensures field reliability over 15-year vehicle life. |
Use Scenario: Isolating auxiliary 12 V rails (e.g., fuel pump, ignition coil) from main battery during fault conditions. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch with fast turn-off (<68 ns td(off)) for fault containment. Use Value: 31 mJ EAS withstands inductive kickback from solenoids; SO-8 footprint allows compact dual-MOSFET redundancy layout. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Control |
Use Scenario: Providing clean, switched 12 V power to CMOS image sensors and ISP processors in rear-view cameras. IC Role / Device Role / Timing Role: Low-noise, low-leakage power switch with <1 μA IDSS at -30 V to prevent standby current drain. Use Value: -150 μA IDSS max at +175 °C prevents battery drain in parked vehicles; tight VGS(th) tolerance avoids false turn-on during cold cranking. |
Use Scenario: Half-bridge high-side switch in EPS motor phase-leg drivers operating at 20–50 kHz PWM frequency. IC Role / Device Role / Timing Role: Synchronous rectifier with low Qgd/Qg ratio for reduced Miller-induced shoot-through risk. Use Value: 9 nC Qgd (typ.) enables precise dead-time control; RthJF = 22 °C/W supports direct thermal coupling to heatsinked PCB layers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | Higher RDS(on) (0.06 Ω @ -10 V), TO-220 package, no AEC-Q101 qualification | Limited to non-automotive industrial use; lacks thermal performance and reliability validation for automotive environments | Use only where cost outweighs qualification requirements and board space permits through-hole mounting |
| DMT3006LPS-13 | SO-8, AEC-Q101 qualified, but RDS(on) = 0.022 Ω @ -10 V and lower ID = -12 A rating | Better gate charge (22 nC) but lower current capacity; less suitable for >12 A continuous loads | Select when prioritizing switching efficiency over peak current handling in compact ADAS subsystems |
Compared with IRF9530NPbF and DMT3006LPS-13, SQ4435EY-T1_GE3 delivers optimal balance of -15 A current capability, 0.018 Ω on-resistance, and full AEC-Q101 compliance in SO-8 - making it the preferred choice for thermally demanding, safety-critical automotive power switches.
Availability
SQ4435EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine management systems, and ADAS power distribution requiring stable component supply across multi-year production cycles.
Supply support for SQ4435EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal solutions for automotive, industrial, and computing markets.
SQ4435EY-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-temperature, high-reliability power switching in 12 V vehicle electrical architectures.
FAQ
What is the maximum junction temperature rating for SQ4435EY-T1_GE3?
The SQ4435EY-T1_GE3 is rated for a maximum junction temperature of +175 °C, verified per AEC-Q101 stress testing. This enables operation in under-hood environments where ambient temperatures exceed +105 °C, provided PCB thermal design maintains TJ ≤ 175 °C under worst-case load and ambient conditions. The SQ4435EY-T1_GE3 datasheet specifies RDS(on) up to this temperature limit.
Is SQ4435EY-T1_GE3 compatible with 5 V gate drive?
Yes, SQ4435EY-T1_GE3 is fully specified at VGS = -4.5 V, delivering 0.031 Ω RDS(on) (max) at -6 A drain current. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures strong enhancement-mode turn-on with standard 5 V logic-level controllers, eliminating need for gate boosters in BCM and lighting modules. The SQ4435EY-T1_GE3 supports robust operation even with gate drive tolerances down to -4 V.
Does SQ4435EY-T1_GE3 have an integrated body diode, and what is its forward voltage?
Yes, SQ4435EY-T1_GE3 includes a monolithic source-drain body diode with typical forward voltage VSD = -0.84 V at -8 A and 25 °C. At elevated temperature (+150 °C), VSD drops to ~-0.65 V, improving freewheeling efficiency in H-bridge and buck converter topologies. This diode is rated for -60 A pulsed current and supports synchronous rectification in SQ4435EY-T1_GE3-based power stages.
What is the thermal resistance from junction to ambient for SQ4435EY-T1_GE3?
The junction-to-ambient thermal resistance (RthJA) for SQ4435EY-T1_GE3 is 85 °C/W when mounted on a 1" × 1" FR-4 PCB with 2 oz. copper on both sides. This value assumes standard SO-8 land pattern per Vishay Application Note 826. For higher-power applications, the lower junction-to-case (RthJF = 22 °C/W) path should be leveraged via thermal vias to internal ground planes. The SQ4435EY-T1_GE3 thermal model is validated per JEDEC JESD51 standards.
Is SQ4435EY-T1_GE3 lead (Pb)-free and halogen-free?
Yes, SQ4435EY-T1_GE3 is manufactured as lead (Pb)-free and halogen-free per Vishay's material compliance policy, meeting RoHS Directive 2011/65/EU and JEDEC JS709C. The "GE3" suffix explicitly denotes green packaging. Material declarations and test reports for SQ4435EY-T1_GE3 are accessible via Vishay's website using document number 67932 and compliance portal www.vishay.com/doc?99912.
SQ4435EY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2170 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.8W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4435EY-T1_GE3 FAQ
1.How can I place an order for SQ4435EY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4435EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4435EY-T1_GE3 reliable?
The price and inventory of SQ4435EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4435EY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4435EY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4435EY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4435EY-T1_GE3?
SQ4435EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4435EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4435EY-T1_GE3?
For technical support, including SQ4435EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4435EY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4435EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4435EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4435EY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4435EY-T1_GE3?
All SQ4435EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4435EY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4435EY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4435EY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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