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Vishay Siliconix SQ4470EY-T1_BE3
- Part No.:
- SQ4470EY-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4470EY-T1_BE3.pdf
- Description:
- MOSFET N-CH 60V 16A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,445
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Product details
Overview
SQ4470EY-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 16 A continuous drain current at 25 °C, and 0.012 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and automotive body electronics.
For engineers reviewing the SQ4470EY-T1_BE3 datasheet, SQ4470EY-T1_BE3 pinout, SQ4470EY-T1_BE3 application, or SQ4470EY-T1_BE3 equivalent, this page delivers verified electrical parameters, SO-8 package layout, thermal performance data, and validated alternative parts for automotive power design validation and BOM optimization.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with 45 nC total gate charge and 13 ns turn-on delay. Its 100 % Rg and UIS tested construction ensures robustness in inductive load switching.
The device features a single N-channel configuration in SO-8 package with four drain terminals (pins 4, 5, 6, 7), two source terminals (pins 1, 2, 3), and one gate (pin 8). Thermal resistance is 21 °C/W junction-to-case (drain) and 80 °C/W junction-to-ambient on 1"² FR-4 PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin |
| RDS(on) @ VGS = 10 V | 0.012 Ω - Enables ≤1.2 W conduction loss at 10 A, critical for thermally constrained modules |
| ID (continuous, TC = 25 °C) | 16 A - Supports high-current loads such as radiator fan drivers and seat motor H-bridges |
| Qg | 45 nC - Determines gate drive power requirement; compatible with standard automotive gate drivers |
| TJ operating range | –55 to +175 °C - Validated for engine bay placement without derating in most OEM thermal profiles |
| EAS | 125 mJ - Withstands single-pulse inductive energy from solenoid or motor commutation events |
| RthJA (PCB mount) | 80 °C/W - Defines thermal footprint needed on double-sided 2 oz copper for 16 A operation |
Pinout & Package
SO-8 narrow-body surface-mount package (JEDEC MS-012), 4.9 mm × 3.9 mm × 1.5 mm, lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common source connection; pins 1–3 are internally bonded and electrically identical |
| 4, 5, 6, 7 | Drain (D) | High-current drain path; pins 4–7 share drain node and provide parallel current handling |
| 8 | Gate (G) | Control terminal; requires ≥2.5 V threshold to initiate conduction; 0.87 Ω typical gate resistance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| Low RDS(on) at 6 V drive | 0.014 Ω enables reliable operation with 5 V logic-level gate drivers in 12 V systems |
| Enhanced thermal performance | 21 °C/W RthJF allows direct heat transfer to PCB copper pour or heatsink via exposed drain pads |
| SO-8 footprint compatibility | Standard land pattern per Vishay AN826 supports drop-in replacement of legacy 60 V SO-8 MOSFETs |
Applications
| Engine Control Module (ECM) | Electric Power Steering (EPS) |
|---|---|
Use Scenario: High-side switch for fuel injector driver circuit in gasoline direct injection systems. IC Role / Device Role / Timing Role: Power switch controlling 12 V pulsed current to solenoid injectors with 1 ms on-time and 10 kHz PWM capability. Use Value: 0.012 Ω RDS(on) minimizes I²R heating during extended duty cycles; 175 °C rating avoids thermal shutdown during peak engine load. |
Use Scenario: Low-side switch in three-phase inverter bridge for EPS motor phase control. IC Role / Device Role / Timing Role: N-channel MOSFET in half-bridge leg, switched at 20 kHz with <20 ns rise/fall times. Use Value: 45 nC Qg and 13 ns td(on) enable efficient high-frequency switching; SO-8 package supports compact motor controller PCB layout. |
| Body Control Module (BCM) | Automotive Lighting |
Use Scenario: Load switch for HVAC blower motor in dual-speed configuration. IC Role / Device Role / Timing Role: High-current DC switch delivering up to 16 A to brushed DC motor with reverse polarity protection diode. Use Value: 50 A IAS and 125 mJ EAS withstand motor stall and back-EMF transients; AEC-Q101 qualification ensures field reliability. |
Use Scenario: LED headlamp matrix dimming switch in adaptive driving beam (ADB) system. IC Role / Device Role / Timing Role: PWM-controlled current sink for high-brightness LED strings requiring precise 100–1000 Hz modulation. Use Value: 0.72 V typical VSD forward voltage reduces power loss in synchronous rectification mode; 175 °C rating supports sealed lamp housing environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N6LF7AG | 100 A rated, TO-263 package; RDS(on) = 0.0045 Ω @ 10 V; higher current capacity but larger footprint | Targeted at high-power traction inverters; not SO-8 compatible | Select when >16 A continuous current or lower RDS(on) is required and board space permits TO-263 mounting |
| IRF7470PBF | SO-8, 60 V, RDS(on) = 0.014 Ω @ 10 V; no AEC-Q101 qualification; 150 °C max TJ | Industrial-grade only; unsuitable for automotive safety-critical systems | Select only for non-automotive applications where cost is prioritized over qualification and extended temperature range |
Compared with STL100N6LF7AG and IRF7470PBF, the SQ4470EY-T1_BE3 uniquely balances AEC-Q101 compliance, SO-8 form factor, 175 °C operation, and 0.012 Ω RDS(on), making it optimal for space-constrained automotive modules requiring full qualification and thermal headroom.
Availability
SQ4470EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive power management, motor control, and lighting systems requiring stable component supply across production lifecycles.
Supply support for SQ4470EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQ4470EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding AEC-Q101 qualification and extended temperature operation.
FAQ
What is the maximum continuous drain current for SQ4470EY-T1_BE3 at 125 °C case temperature?
The SQ4470EY-T1_BE3 supports 9 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and must be applied in high-ambient environments such as engine compartments. The SQ4470EY-T1_BE3 maintains 0.021 Ω RDS(on) at this condition, ensuring predictable conduction loss.
Is SQ4470EY-T1_BE3 pin-compatible with other SO-8 N-channel MOSFETs like the IRF7470PBF?
Yes, the SQ4470EY-T1_BE3 uses the standard SO-8 narrow-body footprint (JEDEC MS-012) with identical pinout: pins 1–3 = source, pins 4–7 = drain, pin 8 = gate. However, while mechanical pin compatibility exists, the SQ4470EY-T1_BE3 differs in AEC-Q101 qualification, 175 °C rating, and lower RDS(on), so functional substitution requires validation of thermal and reliability requirements.
Does SQ4470EY-T1_BE3 include integrated gate protection?
No, the SQ4470EY-T1_BE3 does not integrate gate protection circuitry. It relies on external gate resistors and clamping diodes for ESD and dv/dt protection. The datasheet specifies ±20 V absolute maximum gate-source voltage, and Vishay recommends limiting gate drive slew rate and using series gate resistors to prevent oscillation and overvoltage during fast switching.
What is the typical gate charge value for SQ4470EY-T1_BE3 and how does it affect drive requirements?
The SQ4470EY-T1_BE3 has a typical total gate charge (Qg) of 45 nC at VGS = 10 V, with 9.9 nC gate-source (Qgs) and 11.2 nC gate-drain (Qgd) components. This determines the minimum gate driver current needed: for 100 ns switching transitions, ~450 mA peak drive current is required. The SQ4470EY-T1_BE3's 0.87 Ω typical gate resistance also influences RC time constant in gate loop design.
Can SQ4470EY-T1_BE3 be used in synchronous rectification applications?
Yes, the SQ4470EY-T1_BE3 is suitable for synchronous rectification due to its low 0.012 Ω RDS(on) and 0.72 V typical source-drain diode forward voltage (VSD) at 1.7 A. Its 175 °C rating supports high-efficiency DC-DC converters in automotive ADAS power supplies. However, body diode reverse recovery is not characterized, so hard-switched topologies require careful dead-time management to avoid shoot-through.
SQ4470EY-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3165 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.1W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4470EY-T1_BE3 FAQ
1.How can I place an order for SQ4470EY-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4470EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4470EY-T1_BE3 reliable?
The price and inventory of SQ4470EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4470EY-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ4470EY-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4470EY-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4470EY-T1_BE3?
SQ4470EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4470EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4470EY-T1_BE3?
For technical support, including SQ4470EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4470EY-T1_BE3 requirements.
6.How does Aetrix verify that SQ4470EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ4470EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4470EY-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ4470EY-T1_BE3?
All SQ4470EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4470EY-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4470EY-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ4470EY-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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