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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4470EY-T1_GE3

Name: SQ4470EY-T1_GE3
Brand: Vishay Siliconix
SKU: SQ4470EY-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4470EY-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4470EY-T1_GE3.pdf

Description:: MOSFET N-CH 60V 16A 8SO

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Product details

Overview

SQ4470EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V TrenchFET® power MOSFET in SO-8 package, rated for 16 A continuous drain current at 25 °C, with R_DS(on) = 0.012 Ω at V_GS = 10 V and junction temperature up to +175 °C - deployed in high-reliability DC motor control and body electronics modules.

For engineers reviewing the SQ4470EY-T1_GE3 datasheet, SQ4470EY-T1_GE3 pinout, SQ4470EY-T1_GE3 application, or SQ4470EY-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 100 % R_g and UIS testing, thermal performance under 125 °C ambient, and SO-8 footprint compatibility with legacy board layouts.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.5–3.5 V) enables robust drive from standard microcontroller GPIOs, while its 45 nC total gate charge supports efficient PWM operation at frequencies up to 100 kHz without excessive driver losses.

The device integrates a body diode with 0.72 V forward voltage at 1.7 A and is characterized for safe operation across -55 °C to +175 °C junction range. Thermal resistance R_thJA = 80 °C/W (PCB mount) and R_thJF = 21 °C/W enable predictable thermal design in constrained chassis-mounted environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 12 V automotive battery systems with 2× transient margin against load dump spikes
R_DS(on) @ V_GS = 10 V	0.012 Ω - delivers ≤ 1.2 W conduction loss at 10 A, enabling compact heatsink-free designs
I_D (continuous)	16 A @ T_C = 25 °C - suitable for high-current solenoid drivers and window lift actuators
Q_g (total gate charge)	45 nC - enables efficient 100 kHz PWM switching with <1 W gate driver power dissipation
T_J max	+175 °C - qualified for under-hood applications including engine bay fan control
AEC-Q101	Qualified - meets stress test requirements for automotive electronic components per Rev. D
E_AS	125 mJ - withstands inductive energy from relay coils and brushed DC motors during turn-off

Pinout & Package

SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm, lead (Pb)-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Source (S)	Common source connection for internal die; pins 1–5 are internally bonded and electrically tied
6, 7, 8	Drain (D)	High-current drain path; pins 6–8 form a single thermal and electrical node for PCB copper pour attachment
4	Gate (G)	Control terminal; isolated from source/drain; requires <1 μA leakage current drive

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.012 Ω R_DS(on) in SO-8 - 35 % lower on-resistance than planar MOSFETs of same size
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and ESD testing per Rev. D
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
Enhanced thermal performance	R_thJF = 21 °C/W allows direct thermal coupling to PCB ground plane for passive cooling
Body diode with low V_SD	0.72 V forward drop at 1.7 A enables freewheeling in H-bridge motor drives without external diodes

Applications

Power Window Control	Seat Motor Driver
Use Scenario: Bidirectional 12 V brushed DC motor actuation for automotive power windows with overcurrent and thermal protection. IC Role / Device Role / Timing Role: High-side and low-side switching element in full H-bridge configuration using two SQ4470EY-T1_GE3 per channel. Use Value: 16 A rating and 175 °C junction capability ensure reliable operation during stall conditions and hot-climate testing.	Use Scenario: Position-adjustable seat motors requiring PWM-controlled torque and direction reversal. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, paired with high-side controller for precise speed regulation. Use Value: 45 nC Q_g and 12 ns rise time support 20–50 kHz PWM without gate driver overheating.
Engine Cooling Fan Driver	Headlight Beam Switching
Use Scenario: Variable-speed radiator fan control based on coolant temperature feedback in ICE vehicles. IC Role / Device Role / Timing Role: Single-ended switch driving fan motor directly from MCU PWM output via gate driver IC. Use Value: R_DS(on) stability over -40 °C to +150 °C ambient ensures consistent airflow across full vehicle operating range.	Use Scenario: High-beam/low-beam LED headlight matrix switching with fast transition and surge immunity. IC Role / Device Role / Timing Role: Load switch isolating auxiliary beam circuits during fault conditions or mode changes. Use Value: 60 V V_DS and 50 A single-pulse avalanche rating protect against inductive kickback from relay coils and LED driver transients.

Power Window Control

Seat Motor Driver

Use Scenario: Bidirectional 12 V brushed DC motor actuation for automotive power windows with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: High-side and low-side switching element in full H-bridge configuration using two SQ4470EY-T1_GE3 per channel.

Use Value: 16 A rating and 175 °C junction capability ensure reliable operation during stall conditions and hot-climate testing.

Use Scenario: Position-adjustable seat motors requiring PWM-controlled torque and direction reversal.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, paired with high-side controller for precise speed regulation.

Use Value: 45 nC Q_g and 12 ns rise time support 20–50 kHz PWM without gate driver overheating.

Engine Cooling Fan Driver

Headlight Beam Switching

Use Scenario: Variable-speed radiator fan control based on coolant temperature feedback in ICE vehicles.

IC Role / Device Role / Timing Role: Single-ended switch driving fan motor directly from MCU PWM output via gate driver IC.

Use Value: R_DS(on) stability over -40 °C to +150 °C ambient ensures consistent airflow across full vehicle operating range.

Use Scenario: High-beam/low-beam LED headlight matrix switching with fast transition and surge immunity.

IC Role / Device Role / Timing Role: Load switch isolating auxiliary beam circuits during fault conditions or mode changes.

Use Value: 60 V V_DS and 50 A single-pulse avalanche rating protect against inductive kickback from relay coils and LED driver transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A rated, PowerFLAT 5x6 package; R_DS(on) = 0.0013 Ω @ 10 V - 9× lower on-resistance but 5× larger footprint	Targeted at high-power traction inverters; not SO-8 compatible	Select only when board redesign accommodates 5x6 mm thermal pad and higher current demands exceed 50 A
IRF7470PBF	60 V, 14 A, SO-8; R_DS(on) = 0.014 Ω @ 10 V; no AEC-Q101 qualification; R_thJA = 90 °C/W	Industrial-grade only; unsuitable for automotive production due to missing qualification and higher thermal resistance	Acceptable for prototyping or non-automotive industrial controls where qualification is not mandated

Compared with STL220N6F7 and IRF7470PBF, SQ4470EY-T1_GE3 uniquely balances AEC-Q101 compliance, SO-8 footprint, 16 A rating, and 0.012 Ω R_DS(on) - making it the only drop-in qualified solution for space-constrained automotive body control modules requiring production-grade reliability.

Availability

SQ4470EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, motor control subsystems, and power distribution modules requiring stable component supply across extended vehicle lifecycles.

Supply support for SQ4470EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ4470EY-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability 12 V system switching in ADAS, body control, and electrified powertrain subsystems.

FAQ

What is the maximum junction temperature rating for SQ4470EY-T1_GE3?

The SQ4470EY-T1_GE3 is rated for a maximum junction temperature of +175 °C, validated per AEC-Q101 stress testing. This rating enables deployment in under-hood locations such as engine control units and radiator fan modules where ambient temperatures exceed 125 °C. The device maintains specified R_DS(on) and switching parameters across the full -55 °C to +175 °C range, and SQ4470EY-T1_GE3 datasheet Figure 12 confirms normalized on-resistance stability up to 175 °C.

Is SQ4470EY-T1_GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SQ4470EY-T1_GE3 uses JEDEC MS-012 SO-8 narrow-body packaging with standard 1.27 mm pitch and 5.0 mm × 4.0 mm outline. Pin 1 is Source, pins 1–5 are internally paralleled Sources, pins 6–8 are paralleled Drains, and pin 4 is Gate - matching industry-standard SO-8 MOSFET pinout. Layout compatibility is confirmed by Vishay's recommended land pattern in Document 72606, and SQ4470EY-T1_GE3 can replace legacy SO-8 N-channel devices without PCB revision when thermal and electrical margins permit.

Does SQ4470EY-T1_GE3 require a gate resistor for safe operation?

SQ4470EY-T1_GE3 does not mandate an external gate resistor for basic switching, but a 1–10 Ω series resistor is recommended to damp ringing and limit peak gate current during fast transitions. The device's typical gate resistance is 0.87 Ω, and its 45 nC total gate charge means a 5 Ω resistor limits dV/dt to ~9 V/ns at 10 V drive - within safe EMI and dv/dt immunity limits. For PWM motor control, SQ4470EY-T1_GE3 gate drive stability is verified with R_g = 1 Ω in the datasheet's switching time test conditions.

What is the avalanche energy rating of SQ4470EY-T1_GE3 and how is it applied in circuit design?

SQ4470EY-T1_GE3 is rated for 125 mJ single-pulse avalanche energy (E_AS) at T_J = 25 °C, measured with L = 0.1 mH. This rating validates robustness against inductive turn-off transients in relay drivers, solenoid controls, and brushed DC motor H-bridges. Designers use this value to size snubbers or confirm safe operation without clamping diodes - for example, a 12 V/10 A motor with 100 μH leakage inductance stores 5 mJ, well below SQ4470EY-T1_GE3's 125 mJ margin. The SQ4470EY-T1_GE3 datasheet Table 2 lists I_AS = 50 A and E_AS = 125 mJ as absolute maximums.

How does the R_DS(on) of SQ4470EY-T1_GE3 change with temperature and gate voltage?

SQ4470EY-T1_GE3 exhibits positive temperature coefficient behavior: R_DS(on) increases from 0.012 Ω at 25 °C to 0.025 Ω at 175 °C (V_GS = 10 V, I_D = 6 A), ensuring current sharing in parallel configurations. At V_GS = 6 V, R_DS(on) is 0.014 Ω at 25 °C and rises to 0.022 Ω at 125 °C. These values are measured and plotted in SQ4470EY-T1_GE3 datasheet Figures 5 and 6, confirming stable operation across automotive temperature extremes without gate drive derating.

SQ4470EY-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3165 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 7.1W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4470EY-T1_GE3 FAQ

1.How can I place an order for SQ4470EY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4470EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4470EY-T1_GE3 reliable?

The price and inventory of SQ4470EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4470EY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4470EY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4470EY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4470EY-T1_GE3?

SQ4470EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4470EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4470EY-T1_GE3?

For technical support, including SQ4470EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4470EY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4470EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4470EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4470EY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4470EY-T1_GE3?

All SQ4470EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4470EY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4470EY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4470EY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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