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Vishay Siliconix SQ4483EY-T1_BE3
- Part No.:
- SQ4483EY-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4483EY-T1_BE3.pdf
- Description:
- MOSFET P-CHANNEL 30V 30A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,552
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Product details
Overview
SQ4483EY-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V VDS, 0.0085 Ω RDS(on) at -10 V VGS, and -22 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in 12 V automotive systems.
For engineers reviewing the SQ4483EY-T1_BE3 datasheet, SQ4483EY-T1_BE3 pinout, SQ4483EY-T1_BE3 application, or SQ4483EY-T1_BE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, 100 % Rg and UIS tested reliability, and SO-8 footprint compatibility with high-current load switch designs requiring thermal robustness and automotive qualification.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with controlled Qg (75–113 nC) and low Crss (580–770 pF), enabling efficient high-frequency PWM control in DC-DC converters and motor drivers. Its negative threshold voltage (-1.5 to -2.5 V) ensures reliable turn-on with standard logic-level gate drivers.
The device integrates a robust body diode with VSD = -0.75 to -1.2 V at -3 A and supports pulsed avalanche energy of 51 mJ. Thermal design is supported by RthJA = 85 °C/W (PCB mount) and RthJF = 21 °C/W (junction-to-case), validated across -55 to +175 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V automotive battery rail protection |
| RDS(on) @ VGS = -10 V | 0.0085 Ω - Enables ≤ 0.85 W conduction loss at -10 A continuous current |
| RDS(on) @ VGS = -4.5 V | 0.0200 Ω - Supports logic-level gate drive without level-shifting in low-voltage control circuits |
| ID Continuous | -22 A @ TC = 25 °C - Sustains high-side load switching in HVAC actuators and lighting modules |
| TJ Operating Range | -55 to +175 °C - Qualified for under-hood placement per AEC-Q101 stress testing |
| Qg Total Gate Charge | 75–113 nC - Determines gate driver power requirement and switching speed trade-off |
| EAS | 51 mJ - Withstands single-pulse inductive energy during load dump or relay coil de-energization |
Pinout & Package
SO-8 (narrow-body, MS-012 compliant) surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 × 3.9 × 1.5 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1/2/3/8 internally bonded to reduce resistance and improve current sharing |
| 4 | Gate (G) | Control input; requires < ±20 V rating and low-impedance drive due to 1–3 Ω gate resistance |
| 5, 6, 7 | Drain (D) | High-current output node; pins 5/6/7 connected to exposed copper pad for thermal dissipation and low-inductance routing |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UIS per Rev. D test plan |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® technology | Delivers lower RDS(on) × Qg figure-of-merit than planar P-channel alternatives |
| Enhanced thermal performance | RthJF = 21 °C/W enables >5 W power dissipation with minimal heatsinking in SO-8 footprint |
| Low VGS(th) variation | ±0.5 V tolerance over -55 to +175 °C ensures stable turn-on timing in wide-temperature environments |
Applications
| Automotive Body Control Module | 12 V DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Power distribution to door locks, window lifts, and mirror controls in centralized BCM architecture. IC Role / Device Role / Timing Role: High-side load switch controlling 12 V supply to resistive/motor loads with reverse polarity protection. Use Value: Low RDS(on) minimizes voltage drop and heat generation during sustained 10–15 A operation; AEC-Q101 qualification ensures field reliability. |
Use Scenario: Synchronous rectification or high-side switching in buck converter stages powering ADAS sensors or infotainment subsystems. IC Role / Device Role / Timing Role: P-channel high-side switch enabling simple gate drive without bootstrap circuitry. Use Value: Logic-level compatibility (RDS(on) = 0.020 Ω @ -4.5 V) reduces driver complexity; low Crss improves EMI performance at 200–500 kHz switching. |
| Engine Bay Fan Controller | LED Headlamp Dimming Circuit |
Use Scenario: PWM-controlled cooling fan driving in high-temperature engine compartment environments. IC Role / Device Role / Timing Role: High-current switching element handling peak currents up to -84 A (pulsed) during startup surge. Use Value: 175 °C rated junction temperature and 51 mJ EAS withstand repeated thermal cycling and inductive kickback without derating. |
Use Scenario: Analog dimming of high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Precision current sink/sourcing switch enabling linear or PWM-based intensity control. Use Value: Tight RDS(on) tolerance (±15 %) and low gate charge ensure consistent brightness and minimal thermal drift across production units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | Higher RDS(on) (0.12 Ω @ -10 V), TO-220 package, no AEC-Q101 qualification | Requires heatsink; unsuitable for automotive under-hood use | Select only for non-automotive industrial prototypes where qualification is not required |
| DMT3006LPS-13 | Lower RDS(on) (0.0055 Ω @ -10 V), same SO-8 package, AEC-Q101 qualified | Better efficiency at high current but higher Qg (130 nC) increases driver loss | Prefer for ultra-low-loss 12 V bus switching where gate drive capability allows higher Qg |
Compared with IRF9530NPBF and DMT3006LPS-13, the SQ4483EY-T1_BE3 balances low RDS(on), moderate Qg, and full automotive qualification in a compact SO-8 package-making it optimal for cost-sensitive, thermally constrained automotive load switches where gate drive simplicity and qualification compliance are primary requirements.
Availability
SQ4483EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, 12 V DC-DC power conversion, and engine bay thermal management systems requiring stable component supply and long-term lifecycle support.
Supply support for SQ4483EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4483EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical systems with emphasis on AEC-Q101 compliance and thermal resilience.
FAQ
What is the maximum continuous drain current rating for SQ4483EY-T1_BE3 at 100 °C case temperature?
The SQ4483EY-T1_BE3 supports -18 A continuous drain current at TC = 100 °C, derived from its -22 A rating at 25 °C and normalized RDS(on) curve showing ~1.2× increase at 175 °C junction temperature. This derating ensures safe operation in high-ambient under-hood environments without forced cooling.
Does SQ4483EY-T1_BE3 require a gate resistor for EMI suppression in automotive PWM applications?
Yes, SQ4483EY-T1_BE3 benefits from a 1–5 Ω series gate resistor to dampen ringing caused by its 580–770 pF Crss and low gate resistance (1–3 Ω). This reduces radiated emissions in 100–500 kHz PWM circuits used in fan or LED dimming, aligning with CISPR 25 Class 5 requirements.
Is SQ4483EY-T1_BE3 compatible with lead-free reflow soldering profiles?
Yes, SQ4483EY-T1_BE3 is qualified for lead-free reflow per JEDEC J-STD-020, supporting peak temperatures up to 260 °C for 30 seconds. Its SO-8 package meets IPC/JEDEC G-002 moisture sensitivity level 1, eliminating bake requirements prior to assembly.
Can SQ4483EY-T1_BE3 be used in bidirectional current sensing configurations?
No, SQ4483EY-T1_BE3 is a unidirectional P-channel MOSFET optimized for high-side switching. Its body diode conducts only from source to drain, and it lacks integrated current-sense FETs or Kelvin-source configuration required for accurate bidirectional sensing.
What is the typical gate threshold voltage range for SQ4483EY-T1_BE3 across temperature?
The SQ4483EY-T1_BE3 exhibits a gate threshold voltage range of -1.5 V to -2.5 V at 25 °C, narrowing to -1.7 V to -2.3 V at 175 °C. This tight, negative-shifted VGS(th) ensures predictable turn-on behavior across the full automotive temperature range without false triggering.
SQ4483EY-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 113 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4483EY-T1_BE3 FAQ
1.How can I place an order for SQ4483EY-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4483EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4483EY-T1_BE3 reliable?
The price and inventory of SQ4483EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4483EY-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ4483EY-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4483EY-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4483EY-T1_BE3?
SQ4483EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4483EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4483EY-T1_BE3?
For technical support, including SQ4483EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4483EY-T1_BE3 requirements.
6.How does Aetrix verify that SQ4483EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ4483EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4483EY-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ4483EY-T1_BE3?
All SQ4483EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4483EY-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4483EY-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ4483EY-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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