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Vishay Siliconix SQ4483EY-T1_GE3
- Part No.:
- SQ4483EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4483EY-T1_GE3.pdf
- Description:
- MOSFET P-CHANNEL 30V 30A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,418
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Product details
Overview
SQ4483EY-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V VDS, 0.0085 Ω RDS(on) at -10 V VGS, and -22 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in 12 V automotive systems.
For engineers reviewing the SQ4483EY-T1_GE3 datasheet, SQ4483EY-T1_GE3 pinout, SQ4483EY-T1_GE3 application, or SQ4483EY-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, SO-8 terminal mapping, and validated alternatives for high-reliability automotive power design.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with 75 nC total gate charge (VGS = -10 V, VDS = -15 V, ID = -10 A). Its -2.0 V typical gate threshold voltage enables robust drive from standard 3.3 V or 5 V logic-level controllers in high-side load switch configurations.
The device integrates a body diode with -0.75 V typical forward voltage at -3 A and features 100 % Rg and UIS testing per AEC-Q101. Thermal resistance is characterized as RthJA = 85 °C/W (PCB mount) and RthJF = 21 °C/W (junction-to-case), supporting stable operation in thermally constrained engine control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V automotive battery rail protection and reverse polarity circuits |
| RDS(on) @ VGS = -10 V | 0.0085 Ω - Enables ≤ 1.9 W conduction loss at -22 A, critical for high-efficiency power distribution units |
| ID Continuous | -22 A @ TC = 25 °C - Supports high-current loads such as fuel pumps, radiator fans, and HVAC actuators |
| Qg Total Gate Charge | 75 nC - Determines gate driver power requirement and switching speed in PWM-controlled high-side switches |
| TJ Operating Range | -55 to +175 °C - Qualified for under-hood environments including ECU, transmission control, and ADAS sensor modules |
| AEC-Q101 Qualified | Yes - Validated for automotive reliability including HTOL, TC, UHAST, and mechanical stress per AEC specification |
| RthJA | 85 °C/W - Defines thermal derating on standard 1" × 1" FR4 PCB; requires heatsinking above ~3.5 W dissipation |
Pinout & Package
SO-8 (Narrow) package per JEDEC MS-012, 5.0 mm × 4.0 mm footprint, 1.75 mm max height, lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1–3 and 8 are internally bonded to reduce source inductance in high-frequency switching |
| 4 | Gate (G) | Control input; requires ≥ -10 V for full enhancement; gate resistance Rg = 2 Ω typical limits ringing |
| 5, 6, 7 | Drain (D) | Power output node; pins 5–7 are internally connected to maximize current handling and thermal path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure of merit for reduced switching + conduction losses in 12 V systems |
| AEC-Q101 qualification | Validated for automotive use with 100 % Rg and UIS testing - eliminates need for additional system-level stress screening |
| High-temperature operation | Rated up to +175 °C TJ - supports placement near heat sources without external cooling in compact ECUs |
| Low gate threshold voltage | VGS(th) = -2.0 V typ. - ensures reliable turn-on with 3.3 V microcontrollers and reduces gate driver complexity |
| Enhanced body diode | VSD = -0.75 V typ. at -3 A - minimizes freewheeling losses in inductive load driving (e.g., solenoids, relays) |
Applications
| Engine Control Unit (ECU) Power Switching | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side switching of fuel injector drivers and ignition coil primary circuits in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET used as controlled high-side switch with logic-level gate drive and fast turn-off for precise pulse-width modulation. Use Value: Low RDS(on) reduces I²R heating during extended duty cycles; AEC-Q101 qualification ensures long-term reliability in vibration-prone engine bays. |
Use Scenario: Load switching for interior lighting, window lift motors, and door lock actuators in BCMs. IC Role / Device Role / Timing Role: High-side power switch enabling centralized control with reverse-polarity and overcurrent protection. Use Value: -175 °C rating allows operation in sealed, non-ventilated BCM enclosures; SO-8 footprint simplifies layout and rework. |
| Transmission Control Module (TCM) | Advanced Driver Assistance Systems (ADAS) Sensors |
Use Scenario: Power gating of solenoid valves and hydraulic pressure regulators in automatic/AMT transmissions. IC Role / Device Role / Timing Role: Robust high-side switch handling repetitive pulsed loads with integrated body diode for inductive kickback clamping. Use Value: 51 mJ single-pulse avalanche energy rating withstands transient voltage spikes during valve de-energization. |
Use Scenario: Power sequencing and fault-isolation for radar, camera, and ultrasonic sensors in ADAS domain controllers. IC Role / Device Role / Timing Role: Controlled power enable switch ensuring clean startup/shutdown and preventing backfeed between sensor rails. Use Value: Tight VGS(th) distribution (-1.5 to -2.5 V) guarantees consistent turn-on across temperature and unit-to-unit variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | VDS = -100 V, RDS(on) = 0.3 Ω @ -10 V - higher voltage rating but 35× higher on-resistance | Designed for industrial 24–48 V systems; unsuitable for low-loss 12 V automotive loads | Select only if > -60 V blocking is required; not recommended for space-constrained or thermally sensitive automotive designs |
| DMTH4007LPS-13 | VDS = -40 V, RDS(on) = 0.0065 Ω @ -10 V, SO-8 - lower RDS(on) but no AEC-Q101 documentation in public datasheet | Targeted at industrial/commercial power supplies; lacks automotive qualification evidence | Acceptable for non-safety-critical 12 V systems where AEC-Q101 is not mandated; verify qualification status directly with Diodes Inc. |
Compared with IRF9530NPBF and DMTH4007LPS-13, SQ4483EY-T1_GE3 uniquely balances AEC-Q101 compliance, ultra-low RDS(on), and SO-8 thermal performance - making it the preferred choice for production automotive power switches where qualification, efficiency, and board area are jointly constrained.
Availability
SQ4483EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and ADAS power management requiring stable component supply and long-term lifecycle support.
Supply support for SQ4483EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4483EY-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-reliability 12 V power switching in harsh under-hood environments.
FAQ
What is the maximum continuous drain current rating for SQ4483EY-T1_GE3 at 100 °C case temperature?
The SQ4483EY-T1_GE3 datasheet specifies -22 A continuous drain current at TC = 25 °C. At TC = 100 °C, derating applies: using the SO-8 thermal resistance RthJC = 21 °C/W and maximum TJ = 175 °C, the allowable power dissipation drops to 3.57 W, limiting ID to approximately -13.5 A (based on RDS(on) = 0.013 Ω at 125 °C junction). SQ4483EY-T1_GE3 must be thermally managed accordingly in high-ambient applications.
Is SQ4483EY-T1_GE3 pin-compatible with other SO-8 P-channel MOSFETs like the FDS4435?
SQ4483EY-T1_GE3 follows standard SO-8 pinout (pins 1–3 & 8 = Source, pin 4 = Gate, pins 5–7 = Drain) and is mechanically compatible with FDS4435. However, FDS4435 has different RDS(on) (0.022 Ω), gate threshold (-1.9 V), and lacks published AEC-Q101 qualification. SQ4483EY-T1_GE3 is not a drop-in replacement without validation of thermal and switching behavior in the target circuit.
Does SQ4483EY-T1_GE3 include integrated ESD protection on the gate?
The SQ4483EY-T1_GE3 datasheet does not specify integrated gate ESD protection structures. Gate-source leakage is limited to ±100 nA at ±20 V, and absolute maximum VGS is ±20 V - indicating standard MOSFET gate oxide robustness. External gate protection (e.g., Zener clamp) is recommended in noisy automotive environments per AEC-Q100 guidelines. SQ4483EY-T1_GE3 relies on system-level protection rather than on-die ESD cells.
What is the typical gate charge required to fully switch SQ4483EY-T1_GE3 in a 10 kHz PWM application?
SQ4483EY-T1_GE3 has a typical total gate charge Qg of 75 nC at VGS = -10 V. For 10 kHz PWM with 50 % duty cycle, average gate drive current is ~0.75 mA. A 1 Ω gate resistor yields 20 ns turn-on delay and 146 ns rise time - sufficient for most automotive power switching. SQ4483EY-T1_GE3 gate drive must deliver this charge within timing constraints while managing shoot-through risk in half-bridge configurations.
Can SQ4483EY-T1_GE3 be used in synchronous rectification topologies?
No - SQ4483EY-T1_GE3 is a P-channel MOSFET optimized for high-side switching, not synchronous rectification. Its body diode forward voltage (-0.75 V) and RDS(on) are not optimized for low-loss freewheeling in buck converters or OR-ing circuits. N-channel devices with lower RDS(on) and dedicated synchronous rectifier drivers are preferred. SQ4483EY-T1_GE3 serves best in controlled high-side load switching, not rectification roles.
SQ4483EY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 113 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4483EY-T1_GE3 FAQ
1.How can I place an order for SQ4483EY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4483EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4483EY-T1_GE3 reliable?
The price and inventory of SQ4483EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4483EY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4483EY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4483EY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4483EY-T1_GE3?
SQ4483EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4483EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4483EY-T1_GE3?
For technical support, including SQ4483EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4483EY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4483EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4483EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4483EY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4483EY-T1_GE3?
All SQ4483EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4483EY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4483EY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4483EY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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