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Vishay Siliconix SQ4840CEY-T1_GE3
- Part No.:
- SQ4840CEY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4840CEY-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,381
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Product details
Overview
SQ4840CEY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 20.7 A continuous drain current at 25 °C, and 175 °C maximum junction temperature, with RDS(on) = 9.0 mΩ at VGS = 10 V and 12.0 mΩ at VGS = 4.5 V - used in high-efficiency DC–DC converters and motor control stages in engine management systems.
For engineers reviewing the SQ4840CEY-T1_GE3 datasheet, SQ4840CEY-T1_GE3 pinout, SQ4840CEY-T1_GE3 application, or SQ4840CEY-T1_GE3 equivalent, this page delivers verified electrical parameters, SO-8 package layout, AEC-Q101 qualification status, thermal resistance values, and validated alternative parts for automotive power switching design validation and BOM optimization.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. It features fully characterized dynamic parameters including Qg = 44.8 nC (typ), Ciss = 2028 pF (typ), and tr/tf = 9/25 ns (typ) under standard gate drive conditions.
The device integrates a robust body diode with VSD = 0.71 V (typ) at IF = 2.8 A and trr = 24 ns (typ), enabling synchronous rectification and freewheeling operation without external diodes in buck converters and H-bridge drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V battery rail transients up to ISO 7637-2 Pulse 5a. |
| RDS(on) @ VGS = 10 V | 9.0 mΩ (max) - Enables ≤1.3 W conduction loss at 12 A, critical for thermally constrained under-hood modules. |
| RDS(on) @ VGS = 4.5 V | 12.0 mΩ (max) - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers in modern MCU-based controls. |
| ID (continuous) | 20.7 A @ TC = 25 °C - Supports high-current loads such as fuel pump drivers and radiator fan controllers. |
| TJ(max) | +175 °C - Qualified for under-hood placement per AEC-Q101, eliminating need for remote mounting or derating. |
| EAS | 45 mJ - Withstands single-pulse inductive energy from solenoid or relay coil de-energization without failure. |
| RthJA | 85 °C/W - Measured on 1" × 1" FR-4 PCB; informs thermal margin calculation for natural-convection cooling designs. |
Pinout & Package
SO-8 (Narrow) surface-mount package per JEDEC MS-012, 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pad for enhanced thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel drain terminals connected to internal die drain metallization and exposed thermal pad - primary current path and heat sink interface. |
| 6 | Gate (G) | Single gate input with Rg = 0.45 Ω (typ); requires <10 Ω series resistor to damp ringing during fast switching. |
| Source (S) | Source (S) | Terminals 1–3 are internally tied to source; provides low-inductance return path for load current and gate drive loop closure. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, transmission, and ADAS subsystems per stress test requirements. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability. |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs, reducing total switching + conduction losses in 200–500 kHz converters. |
| Body diode trr = 24 ns (typ) | Enables efficient synchronous rectification in buck regulators without cross-conduction risk or external Schottky diode. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard per doc# 99912. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed, PWM-driven switching of 12 V fuel injectors with peak currents up to 15 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization; operates in hard-switched mode at 1–10 Hz with fast turn-off to prevent dribble. Use Value: RDS(on) = 9.0 mΩ minimizes I²R heating during extended duty cycles; 175 °C rating allows direct mounting near engine block. |
Use Scenario: Variable-speed control of 12 V DC blower motors in cabin climate systems using H-bridge or half-bridge topology. IC Role / Device Role / Timing Role: High-current half-bridge low-side switch; handles 10–20 A continuous with 20 kHz PWM modulation. Use Value: Low Qg (44.8 nC typ) and fast tf (25 ns typ) reduce switching losses at high frequency; body diode supports freewheeling without shoot-through. |
| Start-Stop System Solenoid Actuator | 12 V Automotive DC–DC Converter Primary Switch |
Use Scenario: Driving 12 V starter solenoids requiring 30 A pulsed current for <50 ms engagement bursts. IC Role / Device Role / Timing Role: Single-pulse high-current switch triggered by BCM; must survive EAS = 45 mJ inductive kickback. Use Value: Rated IDM = 82 A and EAS = 45 mJ ensure robustness against solenoid flyback without snubber circuits. |
Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V synchronous buck converter powering infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: High-frequency (300–500 kHz) power switch with logic-level gate drive compatibility. Use Value: RDS(on) = 12.0 mΩ @ 4.5 V enables direct MCU GPIO drive; low Coss (493 pF typ) reduces capacitive switching loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, RDS(on) = 1.4 mΩ @ 10 V (lower), but SO-8 package not AEC-Q101 qualified; TJ(max) = 175 °C confirmed. | Not certified for automotive safety-critical functions; suitable only for non-AEC environments like industrial 12 V supplies. | Select only if AEC-Q101 compliance is not required and ultra-low RDS(on) justifies higher cost and qualification overhead. |
| IRF7470PBF | 40 V, RDS(on) = 12.5 mΩ @ 10 V, SO-8, AEC-Q101 qualified, but tr/tf = 20/45 ns - slower switching than SQ4840CEY-T1_GE3. | Higher switching loss in >200 kHz converters; acceptable for <100 kHz motor drives where EMI is prioritized over efficiency. | Prefer when gate drive strength is limited or layout constraints require reduced dV/dt; avoid in high-frequency DC–DC designs. |
Compared with STL220N4F7AG and IRF7470PBF, the SQ4840CEY-T1_GE3 delivers optimal balance of AEC-Q101 compliance, 9.0 mΩ conduction loss, and 9 ns rise time - making it the preferred choice for thermally constrained, high-frequency automotive power stages where certification and efficiency are jointly mandated.
Availability
SQ4840CEY-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, HVAC motor controllers, and start-stop system actuation requiring stable component supply across automotive production lifecycles.
Supply support for SQ4840CEY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQ4840CEY-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability 12 V boardnet switching in harsh under-hood environments.
FAQ
What is the maximum continuous drain current rating for SQ4840CEY-T1_GE3 at 125 °C case temperature?
The SQ4840CEY-T1_GE3 supports 12 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and ensures safe operation in high-ambient under-hood locations. The full 20.7 A rating applies only at TC = 25 °C.
Is SQ4840CEY-T1_GE3 suitable for logic-level gate drive from a 3.3 V microcontroller?
Yes - the SQ4840CEY-T1_GE3 has RDS(on) = 12.0 mΩ (max) at VGS = 4.5 V, and its VGS(th) range is 1.5–2.5 V. While full enhancement occurs at ≥4.5 V, it delivers usable conduction at 3.3 V in many applications; however, for guaranteed low-loss operation, a gate driver or level shifter is recommended.
Does SQ4840CEY-T1_GE3 include integrated ESD protection on the gate terminal?
No - the SQ4840CEY-T1_GE3 does not feature built-in gate ESD protection diodes. Per the datasheet, gate-source leakage IGSS is ±100 nA at ±20 V, indicating no clamping structure. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener) is required in handling and PCB layout per AEC-Q101 assembly guidelines.
What is the thermal resistance from junction to foot (RthJF) for SQ4840CEY-T1_GE3?
The SQ4840CEY-T1_GE3 has RthJF = 21 °C/W, measured from junction to the exposed drain pad (foot). This value enables accurate thermal modeling when the SO-8 drain pad is soldered to a large copper pour, and is critical for calculating junction temperature rise in sealed enclosures without forced airflow.
Can SQ4840CEY-T1_GE3 be used in parallel configurations for higher current handling?
Yes - the SQ4840CEY-T1_GE3 exhibits positive temperature coefficient for RDS(on), as shown in the "On-Resistance vs. Junction Temperature" curve. This inherent current-sharing behavior makes it suitable for paralleling, provided matched gate drive impedance and symmetrical PCB layout are maintained to avoid dynamic imbalance.
SQ4840CEY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 68 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2550 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.1W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4840CEY-T1_GE3 FAQ
1.How can I place an order for SQ4840CEY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4840CEY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4840CEY-T1_GE3 reliable?
The price and inventory of SQ4840CEY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4840CEY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4840CEY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4840CEY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4840CEY-T1_GE3?
SQ4840CEY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4840CEY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4840CEY-T1_GE3?
For technical support, including SQ4840CEY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4840CEY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4840CEY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4840CEY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4840CEY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4840CEY-T1_GE3?
All SQ4840CEY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4840CEY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4840CEY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4840CEY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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