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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4840EY-T1_GE3

Name: SQ4840EY-T1_GE3
Brand: Vishay Siliconix
SKU: SQ4840EY-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4840EY-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4840EY-T1_GE3.pdf

Description:: MOSFET N-CH 40V 20.7A 8SO

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Product details

Overview

SQ4840EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 20.7 A continuous drain current at 25 °C, and 0.009 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a high-reliability switching element in engine control units and DC-DC converters.

For engineers reviewing the SQ4840EY-T1_GE3 datasheet, SQ4840EY-T1_GE3 pinout, SQ4840EY-T1_GE3 application, or SQ4840EY-T1_GE3 equivalent, key selection criteria include its SO-8 package thermal performance (R_thJA = 85 °C/W), 100% R_g and UIS testing, and verified 4.5 V gate drive capability for low-voltage microcontroller interfacing.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in automotive power stages. Its gate charge profile (Q_g = 41–62 nC at V_GS = 10 V) supports efficient PWM operation in 200–500 kHz DC-DC topologies while maintaining robust avalanche energy rating (E_AS = 45 mJ).

The device integrates a body diode with V_SD = 0.75–1.1 V at I_F = 2.8 A and supports synchronous rectification in buck converters. Its ±20 V gate-source voltage rating and 1.5–2.5 V threshold voltage enable stable turn-on under noisy automotive supply conditions without external level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems including load dump transients.
R_DS(on) @ 10 V	0.009 Ω - Enables ≤1.8 W conduction loss at 14 A, reducing heatsink requirements in space-constrained ECUs.
R_DS(on) @ 4.5 V	0.012 Ω - Ensures full enhancement with 3.3 V or 5 V logic-level microcontrollers, eliminating gate driver ICs.
I_D (continuous)	20.7 A @ T_C = 25 °C - Supports high-current motor drivers and solenoid controls without derating at board-level cooling.
E_AS	45 mJ - Withstands repetitive inductive switching events in relay and fuel injector drive circuits.
T_J range	−55 to +175 °C - Validated for under-hood deployment in engine compartments per AEC-Q101 stress test requirements.
Q_g	41–62 nC - Balances switching speed and gate drive power loss in 200–500 kHz SMPS designs.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A). JEDEC-compliant footprint with 1.27 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–3 and 5–8: Drain terminals (common internal connection); Pin 4: Gate; Pins 6–7: Source - enables low-inductance parallel drain routing and Kelvin source sensing in high-accuracy current monitoring.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use across temperature, humidity, vibration, and lifetime reliability tests per standard.
100% R_g and UIS testing	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - critical for field-effect reliability in safety-critical loads.
TrenchFET® architecture	Reduces specific on-resistance by >30% vs. planar MOSFETs at same voltage class, improving power density in compact modules.
175 °C maximum junction temperature	Enables operation in high-ambient environments (e.g., near exhaust manifolds) without thermal shutdown or parameter drift.
Low Q_gd/Q_gs ratio	Q_gd = 8.7 nC, Q_gs = 5.5 nC - minimizes Miller effect, enabling stable hard-switching at high dV/dt rates (>10 V/ns).

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive DC-DC Converter Primary Switch
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 18 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Main power switch controlling coil energization and de-energization timing with <21 ns turn-off delay. Use Value: Low R_DS(on) reduces coil heating; 45 mJ E_AS absorbs back-EMF without snubbers; AEC-Q101 ensures long-term reliability in cyclic thermal stress.	Use Scenario: Primary-side switch in 300 kHz synchronous buck converter stepping 12 V battery to 5 V for ADAS sensors. IC Role / Device Role / Timing Role: High-frequency power switch with Q_g = 41–62 nC enabling efficient gate drive at 3.3 V MCU logic levels. Use Value: 0.012 Ω R_DS(on) at 4.5 V eliminates need for level shifters; SO-8 thermal design supports 7.1 W dissipation at PCB mount.
Electric Power Steering (EPS) Motor Phase Leg	Body Control Module (BCM) Load Driver
Use Scenario: Half-bridge high-side switch driving 24 V brushed DC motor with 15 A continuous current. IC Role / Device Role / Timing Role: N-channel high-side switch paired with bootstrap gate driver, leveraging 175 °C TJ rating for under-hood placement. Use Value: R_thJF = 21 °C/W allows direct thermal coupling to chassis; 100% UIS testing prevents failure during motor stall or short-circuit events.	Use Scenario: Driving 12 V incandescent lamps, solenoids, and relays in door modules and lighting control units. IC Role / Device Role / Timing Role: Robust load switch with integrated body diode for inductive kickback clamping. Use Value: V_SD = 0.75–1.1 V limits forward drop; −55 to +175 °C range ensures cold-start and hot-soak functionality across global vehicle fleets.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 18 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Main power switch controlling coil energization and de-energization timing with <21 ns turn-off delay.

Use Value: Low R_DS(on) reduces coil heating; 45 mJ E_AS absorbs back-EMF without snubbers; AEC-Q101 ensures long-term reliability in cyclic thermal stress.

Use Scenario: Primary-side switch in 300 kHz synchronous buck converter stepping 12 V battery to 5 V for ADAS sensors.

IC Role / Device Role / Timing Role: High-frequency power switch with Q_g = 41–62 nC enabling efficient gate drive at 3.3 V MCU logic levels.

Use Value: 0.012 Ω R_DS(on) at 4.5 V eliminates need for level shifters; SO-8 thermal design supports 7.1 W dissipation at PCB mount.

Electric Power Steering (EPS) Motor Phase Leg

Body Control Module (BCM) Load Driver

Use Scenario: Half-bridge high-side switch driving 24 V brushed DC motor with 15 A continuous current.

IC Role / Device Role / Timing Role: N-channel high-side switch paired with bootstrap gate driver, leveraging 175 °C TJ rating for under-hood placement.

Use Value: R_thJF = 21 °C/W allows direct thermal coupling to chassis; 100% UIS testing prevents failure during motor stall or short-circuit events.

Use Scenario: Driving 12 V incandescent lamps, solenoids, and relays in door modules and lighting control units.

IC Role / Device Role / Timing Role: Robust load switch with integrated body diode for inductive kickback clamping.

Use Value: V_SD = 0.75–1.1 V limits forward drop; −55 to +175 °C range ensures cold-start and hot-soak functionality across global vehicle fleets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N4LF6AG	Higher R_DS(on) (12.5 mΩ @ 10 V), same SO-8 package, AEC-Q101 qualified.	Lower current handling (13 A vs. 20.7 A) limits use in high-power injectors or EPS motors.	Select when lower gate charge (Q_g = 32 nC) prioritizes switching efficiency over conduction loss.
IRF3710ZPBF	Non-automotive grade, TO-220 package, higher R_DS(on) (21 mΩ @ 10 V), no AEC-Q101 certification.	Not suitable for production automotive systems due to missing qualification and thermal limitations (R_thJA = 62 °C/W).	Consider only for prototyping or non-safety-critical industrial applications where cost outweighs qualification requirements.

Compared with STL130N4LF6AG and IRF3710ZPBF, SQ4840EY-T1_GE3 delivers superior conduction efficiency (0.009 Ω), validated automotive reliability, and SO-8 thermal performance ideal for volume production in engine and chassis control modules.

Availability

SQ4840EY-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for SQ4840EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ4840EY-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability, high-temperature switching in engine management, transmission control, and ADAS subsystems.

FAQ

What is the maximum gate-source voltage rating for SQ4840EY-T1_GE3?

The SQ4840EY-T1_GE3 has a maximum gate-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. This allows safe operation with standard 12 V gate drivers and provides margin against transient spikes in automotive environments. Exceeding this rating risks permanent gate oxide damage. The SQ4840EY-T1_GE3 must be driven within this limit during all operating and transient conditions.

Is SQ4840EY-T1_GE3 suitable for synchronous rectification in a 40 V automotive buck converter?

Yes, SQ4840EY-T1_GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.009 Ω at 10 V), fast switching parameters (t_d(off) = 45–68 ns), and integrated body diode with V_SD = 0.75–1.1 V at 2.8 A. Its SO-8 package supports adequate thermal dissipation in typical 40 V buck topologies. The SQ4840EY-T1_GE3 must be used with appropriate gate timing to avoid shoot-through.

Does SQ4840EY-T1_GE3 require a gate resistor for automotive EMI compliance?

A gate resistor is recommended for SQ4840EY-T1_GE3 to control dV/dt and reduce radiated emissions in automotive systems. Typical values range from 6 Ω to 22 Ω, balancing switching speed (t_r, t_f) and EMI. The SQ4840EY-T1_GE3 datasheet specifies t_r = 11–17 ns and t_f = 17–26 ns with R_g = 6 Ω, providing a reference point for layout optimization.

What is the thermal resistance from junction to ambient for SQ4840EY-T1_GE3 on a standard PCB?

The junction-to-ambient thermal resistance (R_thJA) for SQ4840EY-T1_GE3 is 85 °C/W when mounted on a 1" square FR-4 PCB with 2 oz copper on both sides. This value assumes standard SO-8 land pattern per Vishay Application Note 826. Actual R_thJA will improve with enhanced copper pour or thermal vias. The SQ4840EY-T1_GE3 thermal performance must be validated in the final board layout.

How does the R_DS(on) of SQ4840EY-T1_GE3 change with temperature?

SQ4840EY-T1_GE3 exhibits positive temperature coefficient behavior: R_DS(on) increases with junction temperature - 0.009 Ω at 25 °C, 0.014 Ω at 125 °C, and 0.018 Ω at 175 °C (all at V_GS = 10 V, I_D = 14 A). This characteristic supports current sharing in paralleled configurations and inherent thermal stability. The SQ4840EY-T1_GE3 datasheet provides normalized R_DS(on) curves for precise thermal modeling.

SQ4840EY-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2440 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 7.1W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4840EY-T1_GE3 FAQ

1.How can I place an order for SQ4840EY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4840EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4840EY-T1_GE3 reliable?

The price and inventory of SQ4840EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4840EY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4840EY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4840EY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4840EY-T1_GE3?

SQ4840EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4840EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4840EY-T1_GE3?

For technical support, including SQ4840EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4840EY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4840EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4840EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4840EY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4840EY-T1_GE3?

All SQ4840EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4840EY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4840EY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4840EY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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