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Vishay Siliconix SQ4850CEY-T1_GE3
- Part No.:
- SQ4850CEY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4850CEY-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:7,121
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Product details
Overview
SQ4850CEY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V TrenchFET® power MOSFET in SO-8 package, with RDS(on) = 0.022 Ω at VGS = 10 V, 12 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood motor control and DC-DC converter high-side switching.
For engineers reviewing the SQ4850CEY-T1_GE3 datasheet, SQ4850CEY-T1_GE3 pinout, SQ4850CEY-T1_GE3 application, or SQ4850CEY-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, SO-8 terminal mapping, and validated automotive alternatives aligned to ISO/TS 16949 design requirements.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. It features 100 % Rg and UIS testing, guaranteed junction temperature operation up to +175 °C, and body diode recovery time (trr) of 20–40 ns at 100 A/μs di/dt.
The device supports gate drive compatibility with standard 4.5 V logic-level controllers and exhibits normalized RDS(on) drift of <1.3× from −55 °C to +175 °C. Its SO-8 footprint enables dual-source PCB layout with industry-standard thermal pad grounding for junction-to-foot RthJF = 22 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 24 V battery rail transients (ISO 7637-2 Pulse 5a) without avalanche stress. |
| RDS(on) @ VGS = 10 V | 0.022 Ω - Enables ≤1.6 W conduction loss at 8.5 A DC load in engine control modules. |
| ID Continuous @ TC = 25 °C | 12 A - Supports high-current solenoid drivers and BLDC gate driver stages without derating. |
| Qg Total Gate Charge | 22.3 nC typical - Allows efficient 100 kHz PWM switching with ≤1 W gate driver power dissipation. |
| tr/tf | 4–14 ns / 11–14 ns - Minimizes switching transition losses in synchronous buck converters. |
| TJ Operating Range | −55 to +175 °C - Validated for under-hood placement adjacent to turbochargers or exhaust manifolds. |
| EAS | 26 mJ - Withstands single-pulse inductive energy from 12 V fuel injector coils without failure. |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm height, with exposed drain paddle thermally connected to pins 1–3 and 5–8 for enhanced heat transfer to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | Internally tied to exposed thermal pad; primary current path for high-side switch output and heat sinking. |
| 4 | Gate (G) | Control input requiring ≤22.3 nC charge; compatible with 3.3 V/5 V microcontroller GPIO via series resistor. |
| Source (S) | Source (S) | Common return node for load current; pins 1–3 are source-connected in internal die configuration per top-view diagram. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test conditions including HTOL, TC, UHAST, and ESD-HBM ≥2 kV. |
| 100 % Rg tested | Ensures consistent gate drive timing across production lots-critical for multi-phase motor control synchronization. |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar MOSFETs at same die size, reducing board area in space-constrained ECUs. |
| Body diode trr = 20–40 ns | Enables zero-voltage switching (ZVS) in half-bridge configurations without external Schottky catch diodes. |
| Junction-to-foot RthJF = 22 °C/W | Allows direct thermal coupling to copper pour on inner layers-reducing thermal resistance by 63 % vs. junction-to-ambient. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed switching of 12 V solenoid injectors with peak currents up to 10 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: High-side power switch controlling injector coil energization and demagnetization. Use Value: Low Qg and fast tf minimize tail current during turn-off, reducing coil energy dissipation and improving fuel metering accuracy. |
Use Scenario: PWM-controlled 24 V blower motor in passenger cabin HVAC systems operating continuously at 85 °C ambient. IC Role / Device Role / Timing Role: Low-side or high-side switching element in H-bridge or single-FET chopper topology. Use Value: 175 °C TJ rating and stable RDS(on) up to 150 °C ensure reliable 100 % duty-cycle operation without thermal shutdown. |
| 12 V/48 V Mild Hybrid DC-DC Converter | Electric Power Steering (EPS) Motor Phase Switch |
Use Scenario: Synchronous rectification in bidirectional buck-boost converters interfacing 12 V starter battery and 48 V Li-ion auxiliary supply. IC Role / Device Role / Timing Role: Low-side synchronous FET with body diode conducting reverse recovery current during dead-time. Use Value: Low Coss (171–235 pF) and controlled Qrr (19–38 nC) reduce switching loss and voltage overshoot during hard commutation. |
Use Scenario: Three-phase inverter leg switching for 3 kW EPS assist motors subjected to vibration, shock, and rapid load transients. IC Role / Device Role / Timing Role: Phase-leg high-side MOSFET in six-step commutation with gate drive isolated by transformer or SiC driver. Use Value: 100 % UIS tested and 23 A IAS rating withstand repetitive inductive kickback from motor phase collapse events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(on) = 0.0018 Ω @ 10 V (lower), but SO-8 package lacks exposed drain pad; RthJA = 50 °C/W vs. 85 °C/W for SQ4850CEY-T1_GE3. | Better conduction efficiency in low-heat-sink designs; less suitable for high-power density layouts requiring thermal pad soldering. | Select when ultra-low RDS(on) dominates over thermal management flexibility. |
| IRF7470PBF | Same SO-8 package and 60 V rating, but RDS(on) = 0.032 Ω @ 10 V and not AEC-Q101 qualified; TJ max = +175 °C not validated. | Limited to non-safety-critical industrial or consumer applications; requires additional qualification effort for automotive use. | Select only for cost-sensitive non-automotive prototypes where AEC-Q101 compliance is not mandated. |
Compared with STL220N6F7AG and IRF7470PBF, SQ4850CEY-T1_GE3 uniquely balances AEC-Q101 validation, SO-8 thermal pad integration, and 22.3 nC gate charge-making it optimal for production-grade automotive power stages where reliability, thermal margin, and drive simplicity are jointly constrained.
Availability
SQ4850CEY-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive product lifecycles.
Supply support for SQ4850CEY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4850CEY-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for SQ4850CEY-T1_GE3 at 125 °C case temperature?
The SQ4850CEY-T1_GE3 supports 6.9 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained high-temperature operation, and must be applied in thermal simulations for under-hood ECU designs where ambient exceeds 85 °C.
Is SQ4850CEY-T1_GE3 suitable for high-frequency PWM applications above 200 kHz?
Yes, SQ4850CEY-T1_GE3 supports PWM frequencies up to 500 kHz due to its low total gate charge (22.3 nC typical) and fast switching times (tr = 4–14 ns, tf = 11–14 ns). However, gate driver selection must account for Qgd/Qgs ratio (5.1 nC / 4.1 nC) to avoid Miller-induced shoot-through in half-bridge configurations.
Does SQ4850CEY-T1_GE3 include integrated ESD protection on the gate terminal?
No, SQ4850CEY-T1_GE3 does not integrate ESD protection circuitry. Its gate-source leakage (IGSS) is specified at ±100 nA at ±20 V, and gate oxide robustness relies on external TVS or RC snubbers per Vishay Application Note AN826. AEC-Q101 qualification includes HBM testing to ≥2 kV, but system-level ESD design remains the responsibility of the end-user.
Can SQ4850CEY-T1_GE3 replace older Vishay SQ4850EY in existing designs?
Yes, SQ4850CEY-T1_GE3 is a drop-in replacement for SQ4850EY with identical SO-8 pinout, electrical specifications, and thermal characteristics. The "C" suffix denotes updated wafer fabrication and enhanced UIS robustness, while "GE3" indicates lead (Pb)-free and halogen-free construction compliant with RoHS and ELV directives-no PCB or firmware changes are required.
What is the safe operating area (SOA) limitation for SQ4850CEY-T1_GE3 in linear mode operation?
In linear (ohmic) mode, SQ4850CEY-T1_GE3 is limited by its maximum power dissipation of 6.8 W at TC = 25 °C and RDS(on)-dependent thermal runaway. The published SOA curve shows DC operation bounded by RDS(on) at VDS < 10 V and by package thermal limit at higher VDS. For sustained linear use, derate power by 50 % above 85 °C case temperature to prevent thermal instability.
SQ4850CEY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1375 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.8W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4850CEY-T1_GE3 FAQ
1.How can I place an order for SQ4850CEY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4850CEY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4850CEY-T1_GE3 reliable?
The price and inventory of SQ4850CEY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4850CEY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4850CEY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4850CEY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4850CEY-T1_GE3?
SQ4850CEY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4850CEY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4850CEY-T1_GE3?
For technical support, including SQ4850CEY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4850CEY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4850CEY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4850CEY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4850CEY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4850CEY-T1_GE3?
All SQ4850CEY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4850CEY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4850CEY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4850CEY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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