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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4850EY-T1_BE3

Name: SQ4850EY-T1_BE3
Brand: Vishay Siliconix
SKU: SQ4850EY-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4850EY-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4850EY-T1_BE3.pdf

Description:: MOSFET N-CH 60V 12A 8SOIC

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Product details

Overview

SQ4850EY-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in SO-8 package, delivering R_DS(on) = 0.022 Ω at V_GS = 10 V and 0.031 Ω at V_GS = 4.5 V, rated for continuous drain current of 12 A at T_C = 25 °C and junction temperature up to +175 °C - used in high-reliability DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQ4850EY-T1_BE3 datasheet, SQ4850EY-T1_BE3 pinout, SQ4850EY-T1_BE3 application, or SQ4850EY-T1_BE3 equivalent, key selection criteria include AEC-Q101 qualification, trench-based R_DS(on) stability over temperature, SO-8 thermal resistance (R_thJA = 85 °C/W), and single-pulse avalanche energy rating of 26 mJ.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with tight gate threshold voltage distribution (V_GS(th) = 1.5–2.5 V) and robust dynamic performance: Q_g = 20–30 nC, C_iss = 1000–1250 pF, and fast switching with t_d(on) ≤ 11 ns and t_f ≤ 14 ns under standard test conditions.

It features 100 % R_g and UIS testing, operates across -55 °C to +175 °C junction range, and supports bidirectional conduction via integrated body diode with V_SD = 0.8–1.2 V at I_F = 1.7 A and V_GS = 0 V - critical for freewheeling paths in automotive H-bridge and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 48 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	0.022 Ω - enables <1.3 W conduction loss at 6 A, supporting compact thermal design in space-constrained ECUs.
R_DS(on) @ V_GS = 4.5 V	0.031 Ω - ensures reliable turn-on with 5 V logic-level gate drivers common in ASIL-B microcontrollers.
I_D (continuous, T_C = 25 °C)	12 A - supports medium-power loads such as fuel pump drivers and HVAC blower stages without external heatsinking.
E_AS	26 mJ - provides margin against inductive switching stress in solenoid and relay drive circuits.
T_J max	+175 °C - meets under-hood thermal requirements per AEC-Q101, enabling placement near powertrain modules.
AEC-Q101 qualified	Yes - certified for automotive use with full stress testing including HTGB, HTRB, and UIS per Rev. G specification.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation; dimensions per JEDEC MS-012: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A), 1.27 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed copper pad - primary current path and thermal conduction path to PCB ground plane.
5	Gate (G)	High-impedance control terminal requiring <30 nC total charge for full enhancement; sensitive to ESD (±20 V rating).
6	Source (S)	Reference node for gate drive and current sensing; tied to system power ground in high-side or low-side configurations.

Key Features

Feature	Design Value
TrenchFET® construction	Enables lower R_DS(on) per die area vs. planar MOSFETs, improving power density in SO-8 footprint.
100 % R_g and UIS tested	Guarantees gate resistance consistency (0.3–2.1 Ω) and single-pulse avalanche ruggedness across all units.
AEC-Q101 qualification	Validates reliability for automotive applications including temperature cycling, humidity bias, and mechanical shock.
Low Q_gd/Q_gs ratio	Q_gd = 4.4 nC / Q_gs = 2.9 nC → ~1.52 - reduces Miller effect, enabling stable switching at >100 kHz in SMPS designs.
Body diode softness (t_rr not specified, but V_SD = 0.8–1.2 V)	Supports moderate-frequency freewheeling with low reverse recovery loss in non-synchronous buck regulators.

Applications

Engine Control Unit (ECU) Power Stage	Automotive DC-DC Converter
Use Scenario: High-side switch for fuel injector driver in gasoline direct injection systems. IC Role / Device Role / Timing Role: N-channel MOSFET configured as grounded-source switch controlled by isolated gate driver. Use Value: 175 °C operation allows mounting directly on ECU PCB near combustion sensors; 26 mJ E_AS withstands inductive kickback during rapid valve closure.	Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera module. IC Role / Device Role / Timing Role: Low-side power switch operating at 300 kHz with 4.5 V gate drive from controller PWM output. Use Value: R_DS(on) = 0.031 Ω at 4.5 V minimizes conduction loss while maintaining efficiency >92 % at 5 A load.
HVAC Blower Motor Driver	Transmission Control Module (TCM) Solenoid Interface
Use Scenario: Half-bridge leg driving brushed DC blower motor in cabin climate system. IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled H-bridge with freewheeling via integrated body diode. Use Value: V_SD = 0.8–1.2 V ensures low forward drop during flyback, reducing heat generation during 100 % duty cycle operation.	Use Scenario: On/off control of linear shift solenoids in 8-speed automatic transmission. IC Role / Device Role / Timing Role: Single-ended switch interfacing between MCU GPIO and 12 V solenoid coil (≈200 mH). Use Value: 60 V V_DS rating accommodates load dump transients up to 65 V per ISO 16750-2; 48 A I_DM handles surge during coil energization.

Engine Control Unit (ECU) Power Stage

Automotive DC-DC Converter

Use Scenario: High-side switch for fuel injector driver in gasoline direct injection systems.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as grounded-source switch controlled by isolated gate driver.

Use Value: 175 °C operation allows mounting directly on ECU PCB near combustion sensors; 26 mJ E_AS withstands inductive kickback during rapid valve closure.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera module.

IC Role / Device Role / Timing Role: Low-side power switch operating at 300 kHz with 4.5 V gate drive from controller PWM output.

Use Value: R_DS(on) = 0.031 Ω at 4.5 V minimizes conduction loss while maintaining efficiency >92 % at 5 A load.

HVAC Blower Motor Driver

Transmission Control Module (TCM) Solenoid Interface

Use Scenario: Half-bridge leg driving brushed DC blower motor in cabin climate system.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled H-bridge with freewheeling via integrated body diode.

Use Value: V_SD = 0.8–1.2 V ensures low forward drop during flyback, reducing heat generation during 100 % duty cycle operation.

Use Scenario: On/off control of linear shift solenoids in 8-speed automatic transmission.

IC Role / Device Role / Timing Role: Single-ended switch interfacing between MCU GPIO and 12 V solenoid coil (≈200 mH).

Use Value: 60 V V_DS rating accommodates load dump transients up to 65 V per ISO 16750-2; 48 A I_DM handles surge during coil energization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN6LF5	Lower R_DS(on) = 0.011 Ω @ 10 V but only rated to +150 °C; SO-8 package with different pinout (drain pins 1–4, source 5–6, gate 7).	Not AEC-Q101 qualified; intended for industrial, not automotive, use.	Select only if thermal budget permits higher T_J derating and qualification is not required.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 0.023 Ω @ 10 V, same SO-8 footprint, AEC-Q101 qualified, but higher Q_g = 34 nC and no published E_AS rating.	Higher gate charge increases driver losses in high-frequency (>200 kHz) applications.	Prefer for cost-sensitive designs where switching frequency is <100 kHz and avalanche margin is secondary.

Compared with STL10DN6LF5 and NTMFS4C09NT1G, SQ4850EY-T1_BE3 offers superior thermal capability (+175 °C), verified avalanche energy (26 mJ), and tighter V_GS(th) distribution - making it optimal for safety-critical under-hood switching where reliability under transient stress is mandatory.

Availability

SQ4850EY-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, and HVAC blower motor drivers requiring stable component supply across extended temperature and lifecycle demands.

Supply support for SQ4850EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing markets.

The SQ4850EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-temperature, high-reliability switching in powertrain and chassis control systems.

FAQ

What is the maximum continuous drain current rating for SQ4850EY-T1_BE3 at 125 °C case temperature?

The SQ4850EY-T1_BE3 supports 6.9 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and must be validated with actual board layout and airflow conditions. Designers should reference the Safe Operating Area (SOA) graph on page 5 of the datasheet to confirm pulse operation margins.

Is SQ4850EY-T1_BE3 suitable for use in high-side switch configurations?

Yes, SQ4850EY-T1_BE3 can be used in high-side configurations when paired with a gate driver capable of providing V_GS ≥ 10 V relative to the source node. Its V_GS rating of ±20 V and 175 °C junction rating make it viable for 12 V or 48 V battery-referenced high-side switching, though level-shifting gate drive is required to maintain sufficient V_GS during load dump events.

Does SQ4850EY-T1_BE3 have a specified reverse recovery time (t_rr) for its body diode?

No, the SQ4850EY-T1_BE3 datasheet does not specify reverse recovery time (t_rr). It provides forward voltage (V_SD = 0.8–1.2 V at I_F = 1.7 A) and pulsed source current (I_SM = 48 A), but no t_rr or Q_rr values. For synchronous rectification requiring fast recovery, designers should verify performance empirically or consider dedicated Schottky-assisted solutions.

What is the thermal resistance from junction to ambient (R_thJA) for SQ4850EY-T1_BE3 under standard test conditions?

The SQ4850EY-T1_BE3 has a junction-to-ambient thermal resistance of 85 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides. This value assumes no additional heatsinking and is measured per JEDEC JESD51-2. Actual R_thJA will improve with larger copper areas, internal layers, or thermal vias - typical design practice reduces it to 40–60 °C/W in production layouts.

How is the AEC-Q101 qualification of SQ4850EY-T1_BE3 documented and verified?

The AEC-Q101 qualification of SQ4850EY-T1_BE3 is documented in Vishay's internal qualification report referenced in datasheet S21-0849-Rev. G and confirmed through third-party lab testing per AEC-Q101-001. Tests include HTGB (1000 hrs at 150 °C), HTRB (1000 hrs at 150 °C, V_DS = 60 V), and UIS (23 A single-pulse avalanche). Full reports are available upon request from Vishay Automotive Technical Support.

SQ4850EY-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 6A, 5V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 6.8W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4850EY-T1_BE3 FAQ

1.How can I place an order for SQ4850EY-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4850EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4850EY-T1_BE3 reliable?

The price and inventory of SQ4850EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4850EY-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ4850EY-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4850EY-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4850EY-T1_BE3?

SQ4850EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4850EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4850EY-T1_BE3?

For technical support, including SQ4850EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4850EY-T1_BE3 requirements.

6.How does Aetrix verify that SQ4850EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ4850EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4850EY-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ4850EY-T1_BE3?

All SQ4850EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4850EY-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4850EY-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ4850EY-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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