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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4850EY-T1_GE3

Name: SQ4850EY-T1_GE3
Brand: Vishay Siliconix
SKU: SQ4850EY-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4850EY-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4850EY-T1_GE3.pdf

Description:: MOSFET N-CH 60V 12A 8SO

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Product details

Overview

SQ4850EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in SO-8 package, with R_DS(on) = 0.022 Ω at V_GS = 10 V, 12 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood power switching in DC-DC converters and motor drivers.

For engineers reviewing the SQ4850EY-T1_GE3 datasheet, SQ4850EY-T1_GE3 pinout, SQ4850EY-T1_GE3 application, or SQ4850EY-T1_GE3 equivalent, key selection criteria include its 175 °C junction rating, 100% R_g and UIS testing, SO-8 thermal performance (R_thJA = 85 °C/W), and verified 4.5 V gate drive capability for 12 V automotive systems.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with Q_g = 20 nC (typ.) and t_d(on)/t_r/t_d(off)/t_f = 7 ns / 9 ns / 23 ns / 9 ns at V_DD = 30 V. It supports robust unclamped inductive switching with E_AS = 26 mJ and I_AS = 23 A.

The device features a built-in body diode with V_SD = 0.8 V (typ.) at I_F = 1.7 A and is characterized across -55 °C to +175 °C, with R_DS(on) increasing to 0.047 Ω max at T_J = 175 °C and V_GS = 10 V - critical for high-temp engine control modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V nominal battery systems with 20 % overvoltage margin
R_DS(on) @ V_GS = 10 V	0.022 Ω max - enables <1.5 W conduction loss at 8 A in compact SO-8 layout
R_DS(on) @ V_GS = 4.5 V	0.031 Ω max - ensures reliable turn-on from standard 5 V microcontroller GPIOs
I_D (continuous) @ T_C = 25 °C	12 A - suitable for medium-power load switches without forced cooling
E_AS	26 mJ - withstands energy from inductive kickback in solenoid or relay drivers
T_J range	-55 °C to +175 °C - qualified for direct-mounting near engines or transmissions
R_thJA	85 °C/W - defines thermal derating on 1" × 1" FR4 PCB with 2 oz copper

Pinout & Package

SO-8 (narrow) package per JEDEC MS-012, 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–3 & 4–5: Source (S); Pin 6 & 8: Drain (D); Pin 4: Gate (G); Pin 7: Drain (D) - dual-source/dual-drain configuration improves current sharing and reduces parasitic inductance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, transmission, and ADAS power stages
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch switching variation
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress in real-world loads
TrenchFET® technology	Delivers lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs for improved efficiency in PWM operation
175 °C rated junction	Enables placement in high-ambient zones without derating penalties typical of 150 °C parts

Applications

Engine Control Unit (ECU) Load Switch	Automotive DC-DC Converter High-Side Switch
Use Scenario: Switching 12 V auxiliary loads (fuel pump, radiator fan) in engine bay environments exceeding 125 °C ambient. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC, operating in hard-switched on/off mode. Use Value: 175 °C rating avoids thermal shutdown; R_DS(on) = 0.031 Ω @ 4.5 V ensures full turn-on from 5 V logic despite voltage drop across isolation resistor.	Use Scenario: High-side synchronous rectifier in 48 V → 12 V buck converter for mild-hybrid vehicles. IC Role / Device Role / Timing Role: Power switch in primary side of non-isolated buck stage, driven by PWM controller with 100 ns dead-time. Use Value: Low Q_g (20 nC typ.) and fast t_f (9 ns) minimize switching losses at 250 kHz; SO-8 drain pad aids thermal management under 5 A RMS load.
Transmission Control Module Solenoid Driver	ADAS Camera Power Sequencer
Use Scenario: Driving 12 V, 2 A transmission solenoids with frequent pulse-width modulated actuation. IC Role / Device Role / Timing Role: Low-side switch with integrated freewheeling path via body diode, operated at 100–500 Hz PWM. Use Value: Body diode V_SD = 0.8 V (typ.) limits reverse recovery loss; E_AS = 26 mJ absorbs inductive energy during rapid de-energization.	Use Scenario: Controlled power-up sequencing for multi-rail camera modules requiring strict voltage ramp order (e.g., 3.3 V before 1.8 V). IC Role / Device Role / Timing Role: Precision low-dropout load switch enabling soft-start via gate RC network, not PWM. Use Value: Tight V_GS(th) = 1.5–2.5 V allows accurate turn-on threshold tuning; low IDSS (<1 μA @ 25 °C) prevents leakage-induced rail drift during standby.

Engine Control Unit (ECU) Load Switch

Automotive DC-DC Converter High-Side Switch

Use Scenario: Switching 12 V auxiliary loads (fuel pump, radiator fan) in engine bay environments exceeding 125 °C ambient.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC, operating in hard-switched on/off mode.

Use Value: 175 °C rating avoids thermal shutdown; R_DS(on) = 0.031 Ω @ 4.5 V ensures full turn-on from 5 V logic despite voltage drop across isolation resistor.

Use Scenario: High-side synchronous rectifier in 48 V → 12 V buck converter for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Power switch in primary side of non-isolated buck stage, driven by PWM controller with 100 ns dead-time.

Use Value: Low Q_g (20 nC typ.) and fast t_f (9 ns) minimize switching losses at 250 kHz; SO-8 drain pad aids thermal management under 5 A RMS load.

Transmission Control Module Solenoid Driver

ADAS Camera Power Sequencer

Use Scenario: Driving 12 V, 2 A transmission solenoids with frequent pulse-width modulated actuation.

IC Role / Device Role / Timing Role: Low-side switch with integrated freewheeling path via body diode, operated at 100–500 Hz PWM.

Use Value: Body diode V_SD = 0.8 V (typ.) limits reverse recovery loss; E_AS = 26 mJ absorbs inductive energy during rapid de-energization.

Use Scenario: Controlled power-up sequencing for multi-rail camera modules requiring strict voltage ramp order (e.g., 3.3 V before 1.8 V).

IC Role / Device Role / Timing Role: Precision low-dropout load switch enabling soft-start via gate RC network, not PWM.

Use Value: Tight V_GS(th) = 1.5–2.5 V allows accurate turn-on threshold tuning; low IDSS (<1 μA @ 25 °C) prevents leakage-induced rail drift during standby.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN6LF5	Lower R_DS(on) (0.012 Ω @ 10 V) but only 150 °C rated; SO-8 package with different pinout (single-source)	Not suitable for 175 °C zones; higher current density increases thermal risk on same PCB area	Select only if ambient ≤ 150 °C and board layout accommodates revised source/drain routing
IRF7470PBF	Same SO-8, 60 V, but R_DS(on) = 0.035 Ω @ 10 V and no AEC-Q101 qualification; 175 °C capable but not automotive-validated	Lacks automotive reliability documentation; unsuitable for safety-critical ECU functions per ISO 26262	Acceptable for non-safety industrial use where AEC-Q101 is not mandated

Compared with STL10DN6LF5 and IRF7470PBF, SQ4850EY-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and SO-8 dual-source/drain layout - making it the only option for thermally constrained, safety-compliant automotive power switching where both temperature and reliability are non-negotiable.

Availability

SQ4850EY-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and ADAS camera power sequencers requiring stable component supply across extended automotive lifecycles.

Supply support for SQ4850EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and automotive reliability.

The SQ4850EY-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine, chassis, and ADAS subsystems.

FAQ

What is the maximum continuous drain current for SQ4850EY-T1_GE3 at 125 °C case temperature?

The SQ4850EY-T1_GE3 supports 6.9 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained high-temperature operation, and must be validated against actual PCB layout and airflow conditions in the target application.

Is SQ4850EY-T1_GE3 suitable for 4.5 V gate drive in automotive 5 V logic systems?

Yes, SQ4850EY-T1_GE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 0.031 Ω max and guaranteed turn-on. Its V_GS(th) range of 1.5–2.5 V ensures robust activation even with voltage drops across series gate resistors or level-shifters commonly used in automotive microcontroller interfaces.

Does SQ4850EY-T1_GE3 have an integrated body diode, and what is its forward voltage?

Yes, SQ4850EY-T1_GE3 includes a monolithic body diode with V_SD = 0.8 V typical at I_F = 1.7 A and V_GS = 0 V. This diode is rated for pulsed current up to 48 A and supports freewheeling in inductive load circuits such as solenoid drivers and motor H-bridges without external diodes.

What thermal resistance values are specified for SQ4850EY-T1_GE3, and how are they measured?

SQ4850EY-T1_GE3 specifies R_thJA = 85 °C/W (junction-to-ambient, PCB mount) and R_thJF = 22 °C/W (junction-to-foot, drain). Both values are measured on a 1" × 1" FR4 PCB with 2 oz copper on both sides. R_thJF applies when heat is extracted directly from the exposed drain pad, enabling enhanced thermal performance in thermally demanding layouts.

How is the avalanche ruggedness of SQ4850EY-T1_GE3 validated, and what are the key parameters?

SQ4850EY-T1_GE3 undergoes 100 % Unclamped Inductive Switching (UIS) testing per JEDEC standards. It is rated for single-pulse avalanche energy E_AS = 26 mJ and current I_AS = 23 A with L = 0.1 mH. These values confirm its ability to safely absorb inductive energy during fault events like sudden load disconnection in automotive power stages.

SQ4850EY-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 6A, 5V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 6.8W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4850EY-T1_GE3 FAQ

1.How can I place an order for SQ4850EY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4850EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4850EY-T1_GE3 reliable?

The price and inventory of SQ4850EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4850EY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4850EY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4850EY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4850EY-T1_GE3?

SQ4850EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4850EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4850EY-T1_GE3?

For technical support, including SQ4850EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4850EY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4850EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4850EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4850EY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4850EY-T1_GE3?

All SQ4850EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4850EY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4850EY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4850EY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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