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Vishay Siliconix SQ4946CEY-T1_GE3
- Part No.:
- SQ4946CEY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4946CEY-T1_GE3.pdf
- Description:
- MOSFET 2N-CH 60V 7A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:6,335
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Product details
Overview
SQ4946CEY-T1_GE3 from Vishay Siliconix is an automotive-grade dual N-channel 60 V MOSFET in SO-8 Dual package, with RDS(on) = 0.040 Ω at VGS = 10 V, 175 °C maximum junction temperature, and AEC-Q101 qualification-designed for high-reliability motor control and power distribution in engine management systems.
For engineers reviewing the SQ4946CEY-T1_GE3 datasheet, SQ4946CEY-T1_GE3 pinout, SQ4946CEY-T1_GE3 application, or SQ4946CEY-T1_GE3 equivalent, key selection criteria include dual-leg current rating (7 A per channel), thermal resistance (RthJF = 34 °C/W), avalanche energy rating (EAS = 16.2 mJ), and gate charge (Qg = 11.7–18 nC) for PWM-driven 12 V/24 V automotive loads.
Technical Context
This dual N-channel MOSFET integrates two independent trench-based power switches in a single SO-8 Dual package, sharing no internal connection between channels-enabling fully isolated half-bridge or dual-switch topologies. Each channel supports continuous drain current up to 7 A at TC = 25 °C and features body diodes with trr = 20–40 ns and Qrr = 17–34 nC.
It operates across -55 °C to +175 °C junction temperature range, with gate threshold voltage VGS(th) tightly specified at 1.5–2.5 V and 100 % Rg and UIS tested per AEC-Q101. The device uses FR4 PCB mounting with 1" square copper area, yielding RthJA = 110 °C/W and RthJF = 34 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail switching |
| RDS(on) @ VGS = 10 V | 0.040 Ω - Enables ≤ 2 W conduction loss at 7 A per channel under nominal gate drive |
| ID per leg | 7 A continuous - Supports motor driver H-bridge legs or dual DC-DC synchronous rectifiers |
| EAS | 16.2 mJ - Confirmed single-pulse avalanche capability for inductive load turn-off protection |
| Qg | 11.7–18 nC - Determines gate driver power requirement and switching speed in PWM applications |
| TJ(max) | +175 °C - Enables operation in under-hood environments without derating at full current |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronic components |
Pinout & Package
SO-8 Dual package (JEDEC MS-012), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 4.9 mm × 6.0 mm × 1.55 mm (D × H × A), 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to PCB ground plane for thermal and electrical performance |
| 2 (G1) | Gate of Channel 1 | Control input requiring ≥10 V for full enhancement; gate resistance Rg = 1.3–6 Ω affects switching timing |
| 3 (S2) | Source of Channel 2 | Independent source node-allows floating or separate reference for second switch leg |
| 4 (G2) | Gate of Channel 2 | Electrically isolated gate input; enables independent PWM control of dual channels |
| 5 (D1) | Drain of Channel 1 | High-current output node; thermally connected to exposed drain pad (Pin 7/8 tie) |
| 6 (D2) | Drain of Channel 2 | Second high-current output; shares thermal path with Pin 7/8 but electrically isolated |
| 7 (D1) | Drain of Channel 1 (tie) | Exposed drain tab-must be soldered to large copper pour for RthJF = 34 °C/W thermal path |
| 8 (D2) | Drain of Channel 2 (tie) | Second exposed drain tab-requires separate thermal pad layout per Vishay land pattern AN826 |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers low RDS(on) and high cell density in SO-8 footprint-critical for space-constrained engine control units |
| 100 % Rg and UIS testing | Ensures gate robustness and unclamped inductive switching reliability-required for solenoid and fuel injector drivers |
| Dual independent channels | Eliminates need for two discrete SO-8 MOSFETs-reduces PCB area and BOM count in dual-output power stages |
| Body diode trr = 20–40 ns | Minimizes reverse recovery losses in synchronous rectification and bidirectional motor control |
| Exposed dual drain pads (Pins 7 & 8) | Enables parallel thermal paths to PCB-supports 4 W dissipation at TC = 25 °C with proper layout |
Applications
| Engine Control Unit (ECU) Solenoid Driver | Automotive HVAC Blower Motor Control |
|---|---|
Use Scenario: Driving fuel injectors or EGR valves with pulsed 12 V loads in under-hood environments up to 150 °C ambient. IC Role / Device Role / Timing Role: High-side or low-side switch controlling inductive solenoid current; handles repetitive UIS events during valve closure. Use Value: AEC-Q101 qualification and 16.2 mJ EAS ensure field reliability; dual-channel layout simplifies redundant actuator control. | Use Scenario: Bidirectional speed control of 24 V blower motors using H-bridge topology with PWM switching at 20 kHz. IC Role / Device Role / Timing Role: Two low-side switches in half-bridge configuration; body diode trr < 40 ns minimizes shoot-through risk and conduction loss. Use Value: RDS(on) = 0.040 Ω reduces I²R heating at 7 A peak; 175 °C TJ(max) avoids thermal shutdown during sustained airflow demand. |
| 12 V Battery Disconnect Switch | ADAS Camera Power Sequencing |
Use Scenario: Isolating auxiliary battery circuits during vehicle start-stop cycles or fault conditions in 12 V power distribution modules. IC Role / Device Role / Timing Role: Dual-channel OR-ing switch enabling seamless switchover between main and backup supplies. Use Value: Independent gate control allows precise sequencing; low Qg enables fast turn-on (<11 ns td(on)) for transient response to load dumps. | Use Scenario: Controlled power-up/down of image sensor and ISP in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Dual enable switch managing separate rails for sensor analog core and digital interface logic. Use Value: Tight VGS(th) tolerance (1.5–2.5 V) ensures predictable turn-on with 3.3 V GPIO; SO-8 Dual footprint saves board space in compact camera housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7341TRPBF | RDS(on) = 0.055 Ω @ 10 V; TJ(max) = 150 °C; not AEC-Q101 qualified | Limited to non-automotive industrial or consumer power stages | Select when cost sensitivity outweighs automotive qualification and thermal margin |
| DMN6040SSD-13 | RDS(on) = 0.038 Ω @ 10 V; dual SO-8; AEC-Q101 qualified; Qg = 14.5 nC | Near-identical performance envelope; slightly lower RDS(on) but higher gate charge | Prefer for marginally lower conduction loss where gate driver can support extra 2.8 nC charge |
Compared with IRF7341TRPBF and DMN6040SSD-13, the SQ4946CEY-T1_GE3 offers superior thermal capability (+175 °C vs. +150 °C) and tighter VGS(th) distribution-critical for consistent turn-on in cold-cranking conditions-while maintaining competitive RDS(on) and avalanche robustness.
Availability
SQ4946CEY-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, HVAC motor drives, and battery disconnect systems requiring stable component supply with automotive-grade traceability and long-term lifecycle support.
Supply support for SQ4946CEY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SQ4946CEY-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® SO-8 Dual family, engineered specifically for space-constrained, thermally demanding 12 V/24 V power switching in engine, chassis, and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for each channel of the SQ4946CEY-T1_GE3?
The SQ4946CEY-T1_GE3 supports 7 A continuous drain current per channel at TC = 25 °C, derating to 4 A at TC = 125 °C. This rating assumes proper PCB thermal design with 1" square FR4 copper area per channel, as defined in the Vishay S21-0029 datasheet. The device's dual-drain SO-8 package enables this current handling within standard surface-mount footprints.
Is the SQ4946CEY-T1_GE3 suitable for use in AEC-Q101-compliant automotive designs?
Yes, the SQ4946CEY-T1_GE3 is explicitly AEC-Q101 qualified per the Vishay S21-0029 datasheet. It undergoes stress testing including HTGB, HTRB, uHAST, temperature cycling, and mechanical shock-validating its suitability for under-hood and safety-critical automotive applications such as engine management and ADAS power supplies.
What is the typical total gate charge (Qg) of the SQ4946CEY-T1_GE3, and how does it affect switching performance?
The SQ4946CEY-T1_GE3 has a typical total gate charge Qg of 11.7 nC (max 18 nC) at VGS = 10 V and VDS = 30 V. This value directly determines required gate driver peak current and switching transition times-e.g., with a 1 Ω gate resistor, turn-on delay is 7–11 ns. Lower Qg enables higher-frequency PWM operation while minimizing driver losses.
Does the SQ4946CEY-T1_GE3 integrate body diodes, and what are their key characteristics?
Yes, each channel of the SQ4946CEY-T1_GE3 includes an integrated body diode. Key specs include forward voltage VSD = 0.75–1.1 V at IF = 2 A, reverse recovery time trr = 20–40 ns, and reverse recovery charge Qrr = 17–34 nC. These parameters are critical for synchronous rectification and inductive load freewheeling, especially in motor control and DC-DC converters.
How is thermal management implemented in the SQ4946CEY-T1_GE3 SO-8 Dual package?
The SQ4946CEY-T1_GE3 uses dual exposed drain pads (Pins 7 and 8) to conduct heat from both MOSFET channels directly into the PCB. With recommended 1" square FR4 copper area, it achieves RthJF = 34 °C/W (junction-to-foot) and RthJA = 110 °C/W (junction-to-ambient). Proper soldering of both drain tabs to dedicated thermal pads per Vishay AN826 is essential to meet these ratings.
SQ4946CEY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 865pF @ 25V
- Power - Max:
- 4W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4946CEY-T1_GE3 FAQ
1.How can I place an order for SQ4946CEY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4946CEY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4946CEY-T1_GE3 reliable?
The price and inventory of SQ4946CEY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4946CEY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4946CEY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4946CEY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4946CEY-T1_GE3?
SQ4946CEY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4946CEY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4946CEY-T1_GE3?
For technical support, including SQ4946CEY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4946CEY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4946CEY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4946CEY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4946CEY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4946CEY-T1_GE3?
All SQ4946CEY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4946CEY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4946CEY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4946CEY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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