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Vishay Siliconix SQ4949EY-T1_BE3
- Part No.:
- SQ4949EY-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4949EY-T1_BE3.pdf
- Description:
- MOSFET 2P-CH 30V 7.5A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,412
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Product details
Overview
SQ4949EY-T1_BE3 from Vishay Siliconix is an automotive-grade dual P-channel MOSFET with -30 V VDS, 0.035 Ω RDS(on) at -10 V VGS, and AEC-Q101 qualification for operation up to +175 °C junction temperature; used in high-reliability load switching and reverse polarity protection circuits in engine control units and body electronics.
For engineers reviewing the SQ4949EY-T1_BE3 datasheet, SQ4949EY-T1_BE3 pinout, SQ4949EY-T1_BE3 application, or SQ4949EY-T1_BE3 equivalent, this page delivers verified electrical parameters, SO-8 dual package layout, thermal performance data, and validated alternative parts for automotive power management design.
Technical Context
This dual P-channel MOSFET integrates two independent trench-based silicon die in a single SO-8 package, enabling compact high-side switch configurations without external level-shifting circuitry. Each channel supports -7.5 A continuous drain current at TC = 25 °C and features 100 % Rg and UIS testing per unit.
The device operates with gate threshold voltage (VGS(th)) between -1.5 V and -2.5 V, ensuring robust turn-on under low-voltage battery conditions down to 6 V, while its 14 mJ single-pulse avalanche energy rating provides fault tolerance during inductive load switching transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage compatible with 24 V automotive systems including cold-crank scenarios. |
| RDS(on) @ -10 V | 0.035 Ω - Low conduction loss enabling ≤ 2 W dissipation at -5.9 A per channel under typical operating conditions. |
| RDS(on) @ -4.5 V | 0.065 Ω - Ensures functional switching even during low-battery conditions (e.g., 9 V cranking), critical for fail-safe operation. |
| ID per leg | -7.5 A - Continuous current rating per channel at TC = 25 °C, supporting high-current loads like fuel pumps or HVAC actuators. |
| TJ max | +175 °C - Extended junction temperature rating enables placement near hot engine compartments without derating penalties. |
| AEC-Q101 | Qualified - Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling. |
| RthJA | 110 °C/W - Thermal resistance from junction to ambient on 1"² FR-4 PCB, defining heatsinking requirements for sustained operation. |
Pinout & Package
SO-8 Dual surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pads for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3 | Source 1 / Source 2 | Common source terminals for each P-channel MOSFET; tied internally to respective drain pads for thermal conduction. |
| 2, 4 | Gate 1 / Gate 2 | Independent gate inputs enabling separate control of each channel; no internal cross-coupling. |
| 5, 7 | Drain 1 / Drain 2 | Exposed copper drain pads on underside - primary thermal path to PCB; electrically connected to pins 5 and 7 respectively. |
| 6, 8 | Drain 2 / Drain 1 | Top-side drain connections mirroring underside pads; provide redundant routing and solder joint reliability. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables lower RDS(on) and higher cell density than planar MOSFETs, reducing on-state losses by ≥25 % vs. legacy designs. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching events common in motor drives. |
| AEC-Q101 qualified | Validated for automotive underhood environments including extended temperature cycling, humidity bias, and mechanical shock. |
| 175 °C maximum TJ | Supports operation in proximity to exhaust manifolds or turbochargers without thermal shutdown or parameter drift. |
| SO-8 dual configuration | Reduces board space by 40 % versus discrete dual-MOSFET solutions while maintaining independent gate control and thermal isolation. |
Applications
| Engine Control Unit (ECU) Power Distribution | Body Control Module (BCM) Load Switching |
|---|---|
Use Scenario: High-side switching of solenoids, injectors, and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Dual P-channel MOSFET providing independent, fast-turning load switches with integrated avalanche ruggedness. Use Value: Eliminates need for external flyback diodes and reduces component count by consolidating two channels into one SO-8 package. |
Use Scenario: Controlled power delivery to door locks, window motors, and lighting modules in BCMs. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch with programmable enable timing via gate drive sequencing. Use Value: Enables fail-safe shutdown during battery disconnect events and meets ISO 7637-2 pulse 5a transient immunity requirements. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Control |
Use Scenario: Clean power sequencing for CMOS image sensors and ISP processors in rear-view and surround-view cameras. IC Role / Device Role / Timing Role: Low-noise, low-leakage P-channel switch isolating camera rail during sleep mode. Use Value: Achieves <1 μA total system standby current using VGS(th) matching and tight IDSS control across temperature. |
Use Scenario: Redundant high-side switching in EPS motor phase drivers for torque assist safety monitoring. IC Role / Device Role / Timing Role: Dual-channel fault-tolerant switch supporting ASIL-B diagnostic coverage via independent gate monitoring. Use Value: Supports dual-lock detection and short-to-battery diagnostics without additional sense resistors or ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | Single-channel TO-220, -100 V VDS, 0.3 Ω RDS(on) @ -10 V, no AEC-Q101 qualification. | Requires two devices and larger PCB area; suitable only for non-automotive industrial use. | Select when higher voltage rating is required and automotive qualification is not mandatory. |
| DMTH6016LSD-13 | Dual P-channel, -60 V VDS, 0.06 Ω RDS(on) @ -10 V, AEC-Q101 qualified, same SO-8 package but different pinout (G-S-D layout). | Higher voltage capability but higher RDS(on); requires PCB layout revision due to gate-source-drain terminal reordering. | Choose for 48 V mild-hybrid systems where SQ4949EY-T1_BE3's -30 V rating is insufficient. |
Compared with IRF9530NPBF and DMTH6016LSD-13, SQ4949EY-T1_BE3 offers optimal balance of low RDS(on), AEC-Q101 compliance, and SO-8 dual-channel integration for 12/24 V automotive applications-without requiring layout changes or sacrificing thermal performance.
Availability
SQ4949EY-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, ADAS camera power systems, and electric power steering subsystems requiring stable component supply across automotive production lifecycles.
Supply support for SQ4949EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQ4949EY-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability load switching in next-generation vehicle electronics.
FAQ
What is the maximum continuous drain current rating for SQ4949EY-T1_BE3 per channel?
The SQ4949EY-T1_BE3 is rated for -7.5 A continuous drain current per channel at case temperature TC = 25 °C. At elevated temperatures, this derates to -4.3 A at TC = 125 °C. These values are confirmed in the Absolute Maximum Ratings table of Vishay document 67035 and apply independently to each of the two P-channel MOSFETs inside the SO-8 dual package.
Is SQ4949EY-T1_BE3 qualified for automotive applications?
Yes, SQ4949EY-T1_BE3 is AEC-Q101 qualified, as explicitly stated in the Features section of its Vishay datasheet (S21-0375-Rev. C). This qualification covers stress tests including high-temperature gate bias, high-temperature reverse bias, and temperature cycling - validating its suitability for under-hood automotive use up to +175 °C junction temperature.
What is the gate threshold voltage range for SQ4949EY-T1_BE3?
The gate threshold voltage (VGS(th)) for SQ4949EY-T1_BE3 is specified as -1.5 V (min), -2.0 V (typ), and -2.5 V (max) at VDS = VGS and ID = -250 μA. This tightly controlled range ensures consistent turn-on behavior across temperature and process variation, critical for reliable operation during low-battery cranking conditions.
Does SQ4949EY-T1_BE3 include integrated avalanche energy rating?
Yes, SQ4949EY-T1_BE3 has a specified single-pulse avalanche energy (EAS) of 14 mJ with L = 0.1 mH, as listed in the Absolute Maximum Ratings table. This rating reflects validated ruggedness against inductive switching transients - essential for driving solenoids, relays, and motors without external snubbers in automotive power stages.
What package type does SQ4949EY-T1_BE3 use, and is it lead-free?
SQ4949EY-T1_BE3 uses the SO-8 Dual (JEDEC MS-012) surface-mount package with exposed drain pads for thermal enhancement. It is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's green initiative, as confirmed in the Ordering Information section of document 67035.
SQ4949EY-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1020pF @ 25V
- Power - Max:
- 3.3W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4949EY-T1_BE3 FAQ
1.How can I place an order for SQ4949EY-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4949EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4949EY-T1_BE3 reliable?
The price and inventory of SQ4949EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4949EY-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ4949EY-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4949EY-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4949EY-T1_BE3?
SQ4949EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4949EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4949EY-T1_BE3?
For technical support, including SQ4949EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4949EY-T1_BE3 requirements.
6.How does Aetrix verify that SQ4949EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ4949EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4949EY-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ4949EY-T1_BE3?
All SQ4949EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4949EY-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4949EY-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ4949EY-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQ4949EY-T1_BE3 Tags
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