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Vishay Siliconix SQ7414AENW-T1_GE3
- Part No.:
- SQ7414AENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQ7414AENW-T1_GE3.pdf
- Description:
- MOSFET N-CH 60V 18A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,464
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Product details
Overview
SQ7414AENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in PowerPAK® 1212-8W package, rated for 60 V VDS, 18 A continuous drain current at 125 °C, and 0.023 Ω RDS(on) at VGS = 10 V. It delivers PWM-optimized switching performance with wettable flank terminals and AEC-Q101 qualification for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQ7414AENW-T1_GE3 datasheet, SQ7414AENW-T1_GE3 pinout, SQ7414AENW-T1_GE3 application, or SQ7414AENW-T1_GE3 equivalent, this page provides verified thermal resistance (RthJC = 2.4 °C/W), gate charge (Qg = 19–25 nC), avalanche energy rating (EAS = 16 mJ), and junction temperature range (–55 to +175 °C) critical for high-reliability automotive power design.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in high-duty-cycle automotive power stages. Its 1.07 mm profile and wettable flank terminals support automated optical inspection (AOI) and robust solder joint reliability on FR4 PCBs.
The device features 100 % Rg and UIS testing per production lot, with guaranteed dynamic parameters including Ciss = 1275–1590 pF and Qgd = 3.6 nC - enabling precise gate drive sizing for 48 V battery-fed BLDC controllers and synchronous rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V nominal systems with 20 % overvoltage margin for load dump transients |
| RDS(on) @ VGS = 10 V | 0.023 Ω - enables ≤ 3.6 W conduction loss at 12 A continuous, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 0.028 Ω - ensures robust turn-on with 5 V logic-level gate drivers in automotive microcontroller interfaces |
| Qg | 19–25 nC - determines gate driver power demand and switching loss trade-off in 20–100 kHz PWM stages |
| RthJC | 2.4 °C/W - allows direct thermal path to copper pour or metal-core PCB for > 40 W power dissipation |
| EAS | 16 mJ - withstands single-pulse inductive energy during fault events without failure in motor phase legs |
| TJ Range | –55 to +175 °C - qualified for engine compartment placement per AEC-Q101 stress test conditions |
Pinout & Package
PowerPAK® 1212-8W package: 3.3 mm × 3.3 mm footprint, 1.07 mm height, wettable flank terminals for AOI-compatible solder joints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with Rg = 0.6–1.6 Ω - enables stable gate drive without external series resistor in most 5 V MCU designs |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed copper pad - primary thermal and current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - no requalification needed for Tier 1 BOMs |
| Wettable flank terminals | Vertical side-wall plating enables automated optical inspection of solder fillet integrity - eliminates X-ray requirement for process validation |
| TrenchFET® architecture | Reduces specific on-resistance by 25 % vs. planar MOSFETs at same voltage class - improves efficiency in space-constrained ECUs |
| PWM-optimized dynamic parameters | Low Qgd/Qg ratio (≈ 0.18) minimizes Miller-induced shoot-through risk in half-bridge configurations |
| 100 % Rg and UIS tested | Every production unit verified for gate resistance consistency and unclamped inductive switching robustness - reduces field failure root cause analysis time |
Applications
| Automotive Body Control Module (BCM) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side load switch for LED headlamp dimming and adaptive front lighting systems. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via PWM from 5 V automotive MCU with integrated gate driver. Use Value: Low RDS(on) at 4.5 V ensures full brightness at cold start (–40 °C); wettable flanks guarantee solder joint reliability over 15-year vehicle life. |
Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid energy recovery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 50–100 kHz with 50 ns dead-time control. Use Value: 2.4 °C/W RthJC enables > 40 W conduction + switching loss dissipation without heatsink; 16 mJ EAS handles regenerative current surges. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) Auxiliary Power Supply |
Use Scenario: Half-bridge leg in 3-phase inverter driving 12 V EPS assist motor up to 5 kW peak. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (tf = 15–18 ns) to minimize cross-conduction losses. Use Value: Qgd = 3.6 nC limits Miller plateau duration; 175 °C TJ rating sustains operation during sustained torque assist at elevated ambient temperatures. |
Use Scenario: Primary-side switch in auxiliary flyback converter supplying 12 V bias rails for OBC gate drivers and controllers. IC Role / Device Role / Timing Role: 60 V-rated primary switch handling reflected output voltage plus leakage spikes in 200–300 kHz operation. Use Value: 60 V VDS with 20 % margin accommodates 48 V input + 100 V spike; 0.023 Ω RDS(on) keeps standby losses below 150 mW at 100 mA load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V, 220 A rated, DFN5x6 package; RDS(on) = 0.00095 Ω @ 10 V - 24× lower on-resistance but 3.5× larger footprint and 3× higher Qg | Targeted at high-current traction inverters, not compact BCM or auxiliary supplies | Select when > 100 A continuous current and < 1 mΩ RDS(on) are required; avoid for space-constrained 12–20 A designs |
| IRFH7107TRPBF | 60 V, 15 A, PQFN 5x6; RDS(on) = 0.0032 Ω @ 10 V; RthJC = 1.2 °C/W - superior thermal performance but non-AEC-Q101 qualified | Industrial motor drives and telecom PSUs where automotive qualification is not mandated | Choose for cost-sensitive industrial designs needing lower RDS(on); do not substitute in automotive safety-critical systems without requalification |
Compared with STL220N6F7AG and IRFH7107TRPBF, SQ7414AENW-T1_GE3 uniquely balances AEC-Q101 compliance, 3.3 mm × 3.3 mm footprint, wettable flanks, and 0.023 Ω RDS(on) - making it optimal for space-limited, thermally constrained automotive modules requiring zero requalification effort.
Availability
SQ7414AENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid converters, electric power steering drivers, and on-board charger auxiliary supplies requiring stable component supply across extended vehicle lifecycles.
Supply support for SQ7414AENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ7414AENW-T1_GE3 belongs to Vishay's AEC-Q101-qualified PowerPAK® 1212-8W TrenchFET® family, engineered specifically for compact, thermally demanding automotive power stages where board space, solder joint reliability, and transient robustness are critical.
FAQ
What is the maximum continuous drain current rating for SQ7414AENW-T1_GE3 at 125 °C?
The SQ7414AENW-T1_GE3 supports 18 A continuous drain current at case temperature (TC) = 125 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and accounts for RDS(on) increase with junction temperature - verified across production lots per Vishay document 62980.
Does SQ7414AENW-T1_GE3 require a gate resistor for driving from a 5 V microcontroller?
SQ7414AENW-T1_GE3 has a typical gate resistance (Rg) of 1.12 Ω and low total gate charge (19–25 nC), allowing direct connection to 5 V automotive MCUs without external gate resistor in most PWM applications below 100 kHz. However, a 1–5 Ω series resistor is recommended to damp ringing in high-di/dt layouts with > 10 cm gate trace length.
Is SQ7414AENW-T1_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, SQ7414AENW-T1_GE3 is well-suited for synchronous rectification in 48 V-to-12 V converters due to its 0.028 Ω RDS(on) at VGS = 4.5 V, 2.4 °C/W RthJC, and 16 mJ EAS. These parameters ensure low conduction loss, efficient thermal transfer to PCB, and robustness against reverse recovery energy during light-load discontinuous conduction mode transitions.
What does "wettable flank terminals" mean for SQ7414AENW-T1_GE3, and why does it matter?
Wettable flank terminals on SQ7414AENW-T1_GE3 refer to vertical sidewall plating on all eight terminals that allows molten solder to wick up the side walls during reflow, forming a visible fillet. This enables automated optical inspection (AOI) to verify solder joint quality - eliminating reliance on X-ray for process validation and improving first-pass yield in automotive manufacturing lines.
How is SQ7414AENW-T1_GE3 different from standard commercial MOSFETs like the Si2302DS?
SQ7414AENW-T1_GE3 differs from commercial MOSFETs such as the Si2302DS through AEC-Q101 qualification, 175 °C maximum junction temperature, 100 % Rg and UIS production testing, wettable flank terminals, and PowerPAK® 1212-8W packaging optimized for automotive thermal and reliability requirements - whereas Si2302DS is a general-purpose SOT-23 device rated only to 150 °C and not qualified for automotive use.
SQ7414AENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1590 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQ7414AENW-T1_GE3 FAQ
1.How can I place an order for SQ7414AENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ7414AENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ7414AENW-T1_GE3 reliable?
The price and inventory of SQ7414AENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ7414AENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ7414AENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ7414AENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ7414AENW-T1_GE3?
SQ7414AENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ7414AENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ7414AENW-T1_GE3?
For technical support, including SQ7414AENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ7414AENW-T1_GE3 requirements.
6.How does Aetrix verify that SQ7414AENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ7414AENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ7414AENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ7414AENW-T1_GE3?
All SQ7414AENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ7414AENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ7414AENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ7414AENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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