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Vishay Siliconix SQ7415AEN-T1_GE3
- Part No.:
- SQ7415AEN-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQ7415AEN-T1_GE3.pdf
- Description:
- MOSFET P-CH 60V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,133
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Product details
Overview
SQ7415AEN-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® 1212-8 package, rated for -60 V drain-source voltage, 0.065 Ω RDS(on) at VGS = -10 V, and -16 A continuous drain current at TC = 25 °C - used as a high-side load switch in 12 V/24 V automotive power distribution modules.
For engineers reviewing the SQ7415AEN-T1_GE3 datasheet, SQ7415AEN-T1_GE3 pinout, SQ7415AEN-T1_GE3 application, or SQ7415AEN-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 175 °C junction temperature rating, low RthJC (2.8 °C/W), and verified UIS robustness for inductive load switching in engine control units and body electronics.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching with gate charge of 25.5 nC (typ.) at VGS = -10 V and VDS = -30 V. Its gate threshold voltage is -2.0 V (typ.), enabling reliable turn-on from standard 3.3 V or 5 V logic-level controllers in high-side configurations.
The PowerPAK 1212-8 package features exposed drain pads on the bottom side for direct thermal conduction to PCB copper, delivering RthJA = 81 °C/W (PCB mount) and RthJC = 2.8 °C/W - critical for thermally constrained under-hood applications where ambient temperatures exceed 105 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - supports full reverse-battery protection and load dump transients in 24 V commercial vehicle systems |
| RDS(on) @ VGS = -10 V | 0.065 Ω - enables <1 W conduction loss at 4 A, reducing thermal stress in compact ECUs |
| RDS(on) @ VGS = -4.5 V | 0.090 Ω - ensures functional switching with 5 V microcontroller GPIO without level-shifting |
| ID (continuous, TC = 25 °C) | -16 A - sufficient for driving solenoids, fuel pumps, and HVAC actuators directly |
| Junction Temp Range | -55 °C to +175 °C - qualified for under-hood placement per AEC-Q101 Rev. E |
| Qg (total gate charge) | 25.5 nC (typ.) - allows fast turn-on with <1 μs delay using 10 Ω gate resistor and 5 V drive |
| RthJC | 2.8 °C/W - enables >15 W power dissipation when mounted on 1"² copper pour, avoiding heatsinks |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package measuring 3.3 mm × 3.3 mm × 1.07 mm with exposed drain terminals on the bottom side and 8 terminals on the top perimeter. The package provides ultra-low thermal resistance and space savings over SO-8 and TSSOP-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source connections reduce bond wire inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with 6 Ω typical gate resistance - compatible with standard gate drivers without external series resistor |
| 6, 7, 8, D-Pad | Drain (D) | Four top-side drain pins plus large bottom-side exposed drain pad - maximizes thermal path to PCB and minimizes RDS(on) rise during pulse operation |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HAST, and mechanical shock per Rev. E requirements |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching survivability up to 23 A single-pulse |
| Low-profile 1.07 mm height | Enables integration into low-clearance modules such as junction boxes and smart fuses |
| TrenchFET® process | Delivers 20 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving efficiency in always-on circuits |
| Exposed drain thermal pad | Reduces junction-to-PCB thermal resistance by >60 % compared to standard SO-8, enabling higher sustained current |
Applications
| Engine Control Unit (ECU) Power Switching | Body Control Module (BCM) Load Management |
|---|---|
Use Scenario: High-side switching of fuel injector drivers and ignition coil pre-drivers in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high controlled load switch with fast turn-off to prevent back-EMF damage. Use Value: 175 °C rating ensures stable operation near hot engine blocks; 0.065 Ω RDS(on) limits self-heating during 10 ms pulses at 12 A. | Use Scenario: Centralized power distribution for door locks, window lifts, and mirror heaters in BCMs. IC Role / Device Role / Timing Role: High-side switch with integrated reverse-battery protection and short-circuit current limiting via external sense resistor. Use Value: -60 V VDS withstands ISO 7637-2 pulse 1 (-100 V transient); AEC-Q101 qualification guarantees field reliability over 15-year vehicle life. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Commercial Vehicle Lighting Control |
Use Scenario: Always-on power rail switching for rear-view and surround-view cameras requiring low quiescent current and high transient immunity. IC Role / Device Role / Timing Role: Low-leakage P-channel switch with <1 μA IDSS at 125 °C, enabling sleep-mode power gating. Use Value: -1.5 V to -2.5 V VGS(th) range ensures clean turn-on at cold cranking (6 V battery), eliminating need for gate charge pump. | Use Scenario: PWM dimming and on/off control of LED headlamps and fog lamps in trucks and buses. IC Role / Device Role / Timing Role: High-current, high-voltage switch handling 15 A peak loads with fast fall time (<12 ns) to minimize EMI during PWM transitions. Use Value: 26 mJ EAS rating absorbs energy from lamp inrush and open-circuit inductive kickback without snubber circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, RDS(on) = 0.3 Ω @ -10 V, 100 % higher thermal resistance (RthJC = 3.5 °C/W), no AEC-Q101 qualification | Requires heatsink for >3 A loads; unsuitable for automotive under-hood mounting | Select only for non-automotive industrial prototypes with ample board space and cooling |
| DMT6009LPS-13 | PowerDI™ 5060 package, RDS(on) = 0.055 Ω @ -10 V, but rated only to 150 °C junction and not AEC-Q101 qualified | Limited to cabin-mounted infotainment or telematics; fails extended temperature validation | Consider only for cost-sensitive consumer-grade automotive accessories with derated current |
Compared with IRF9530NPBF and DMT6009LPS-13, SQ7415AEN-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and PowerPAK 1212-8's 2.8 °C/W RthJC, making it the only option for high-reliability, space-constrained, high-temperature automotive power switching.
Availability
SQ7415AEN-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine control units, and body electronics requiring stable component supply across long production lifecycles.
Supply support for SQ7415AEN-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ7415AEN-T1_GE3 belongs to Vishay's Automotive TrenchFET® PowerPAK® family, engineered specifically for high-efficiency, high-reliability power switching in harsh-temperature automotive environments.
FAQ
What is the maximum continuous drain current rating for SQ7415AEN-T1_GE3 at 125 °C case temperature?
The SQ7415AEN-T1_GE3 supports -11 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under high ambient conditions. At 175 °C junction temperature, the device maintains functionality but requires careful PCB thermal design to sustain this current without exceeding safe operating area limits. SQ7415AEN-T1_GE3 must be operated within its SOA curve when pulsed above -11 A.
Does SQ7415AEN-T1_GE3 require a gate driver IC for automotive microcontroller interfacing?
No, SQ7415AEN-T1_GE3 does not require an external gate driver IC when driven by standard 3.3 V or 5 V automotive microcontrollers. Its -2.0 V typical gate threshold voltage and 25.5 nC total gate charge allow direct GPIO control with minimal external components. A 10 Ω series gate resistor is recommended to dampen ringing. SQ7415AEN-T1_GE3 has been validated for logic-level compatibility in body control module designs without level shifters or dedicated drivers.
Is SQ7415AEN-T1_GE3 suitable for reverse-battery protection in 24 V truck systems?
Yes, SQ7415AEN-T1_GE3 is suitable for reverse-battery protection in 24 V commercial vehicle systems due to its -60 V VDS rating, which exceeds the -35 V requirement of ISO 16750-2. Its P-channel configuration enables simple high-side placement with source tied to battery, drain to load, and gate controlled by regulator. SQ7415AEN-T1_GE3 has passed AEC-Q101 stress tests including temperature cycling and humidity exposure, confirming robustness against polarity reversal events.
What is the thermal resistance from junction to case (RthJC) for SQ7415AEN-T1_GE3, and how is it measured?
The junction-to-case thermal resistance (RthJC) for SQ7415AEN-T1_GE3 is 2.8 °C/W, measured from the silicon junction to the exposed drain pad on the bottom of the PowerPAK 1212-8 package. This value is determined per JEDEC JESD51-14 using a cold plate method with the drain pad soldered to a copper heat sink. SQ7415AEN-T1_GE3 achieves this low RthJC through direct die attach to the exposed copper drain, enabling efficient heat transfer to the PCB without thermal interface materials.
How does the UIS (unclamped inductive switching) capability of SQ7415AEN-T1_GE3 compare to standard industrial MOSFETs?
SQ7415AEN-T1_GE3 is 100 % UIS tested to a single-pulse avalanche energy of 26 mJ at IAS = -23 A, significantly exceeding typical industrial P-channel MOSFETs that lack production-level UIS screening. This capability allows SQ7415AEN-T1_GE3 to safely absorb inductive kickback from solenoids and relays without external snubbers. Unlike non-automotive parts, SQ7415AEN-T1_GE3 undergoes lot-by-lot UIS verification per AEC-Q101, ensuring consistent ruggedness across production batches.
SQ7415AEN-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1385 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 53W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQ7415AEN-T1_GE3 FAQ
1.How can I place an order for SQ7415AEN-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ7415AEN-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ7415AEN-T1_GE3 reliable?
The price and inventory of SQ7415AEN-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ7415AEN-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ7415AEN-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ7415AEN-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ7415AEN-T1_GE3?
SQ7415AEN-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ7415AEN-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ7415AEN-T1_GE3?
For technical support, including SQ7415AEN-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ7415AEN-T1_GE3 requirements.
6.How does Aetrix verify that SQ7415AEN-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ7415AEN-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ7415AEN-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ7415AEN-T1_GE3?
All SQ7415AEN-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ7415AEN-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ7415AEN-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ7415AEN-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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