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Vishay Siliconix SQ7415AENW-T1_GE3
- Part No.:
- SQ7415AENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SQ7415AENW-T1_GE3.pdf
- Description:
- MOSFET P-CH 60V 16A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,873
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Product details
Overview
SQ7415AENW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-side load switching in 12 V and 24 V vehicle systems. It features -60 V VDS, 0.065 Ω RDS(on) at -10 V VGS, -16 A continuous drain current, AEC-Q101 qualification, and PowerPAK® 1212-8W wettable flank packaging - enabling robust thermal performance and automated optical inspection (AOI) compatibility in engine control units and body electronics.
For engineers reviewing the SQ7415AENW-T1_GE3 datasheet, SQ7415AENW-T1_GE3 pinout, SQ7415AENW-T1_GE3 application, or SQ7415AENW-T1_GE3 equivalent, key selection criteria include its -60 V blocking capability, low RDS(on) at 4.5 V gate drive, 175 °C junction rating, and wettable flank terminals for solder joint reliability in automotive power distribution modules.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching with controlled Qg (25.5 nC typical) and low Crss (84 pF typical), supporting efficient PWM-controlled high-side switching in DC-DC converters and smart power switches. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures stable turn-on under wide temperature and supply variations.
The device operates across -55 °C to +175 °C junction temperature, with RthJC = 2.8 °C/W enabling high-power dissipation when mounted on thermally optimized PCBs. Its 100 % UIS-tested ruggedness and 26 mJ single-pulse avalanche energy support reliable operation during load dump and inductive switching events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - supports 24 V automotive systems with full load-dump margin |
| RDS(on) @ -10 V | 0.065 Ω - enables <1 W conduction loss at 4 A load in high-side switch |
| RDS(on) @ -4.5 V | 0.090 Ω - ensures functional turn-on with standard 5 V logic-level gate drivers |
| ID Continuous | -16 A @ TC = 25 °C - suitable for 100 W+ loads with proper heatsinking |
| TJ Range | -55 °C to +175 °C - meets under-hood thermal requirements per AEC-Q101 |
| Qg | 25.5 nC typical - balances switching speed and gate driver power demand |
| EAS | 26 mJ - withstands inductive energy during fault conditions without failure |
Pinout & Package
Package: PowerPAK® 1212-8W - 3.3 mm × 3.3 mm footprint, 1.07 mm profile, wettable flank terminals for AOI-capable solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Common source connection; pins 1/2/3/5 are internally tied - low-inductance return path for high-current switching |
| 4 | Gate (G) | Control input; requires -10 V for full enhancement, compatible with standard automotive gate drivers |
| 6, 7, 8 | Drain (D) | High-side output node; pins 6/7/8 are internally connected - optimized for thermal conduction to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and ESD testing per stress test plan |
| Wettable flank terminals | Enables automated optical inspection of solder fillets - critical for zero-defect manufacturing in Tier-1 ECUs |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® process | Delivers lower RDS(on) per die area vs. planar MOSFETs - improves power density in space-constrained modules |
| PowerPAK® 1212-8W package | 2.8 °C/W RthJC enables >15 W continuous dissipation without external heatsink on 1"² FR4 PCB |
Applications
| Engine Control Unit (ECU) Load Switch | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side switching of fuel pump, radiator fan, or injector solenoid in 12 V/24 V ECU designs. IC Role / Device Role / Timing Role: P-channel MOSFET acting as a controlled high-side power switch with reverse polarity protection. Use Value: -60 V VDS and 175 °C TJ ensure safe operation during 30 V load dump transients and under-hood thermal extremes. | Use Scenario: Power distribution to door locks, window lift motors, and interior lighting in BCM subsystems. IC Role / Device Role / Timing Role: High-side load switch enabling individual circuit enable/disable with diagnostics via current sensing. Use Value: Low 0.090 Ω RDS(on) at -4.5 V allows direct interface with 5 V microcontroller GPIOs - eliminating level-shifter components. |
| Start-Stop System Battery Management | Commercial Vehicle Lighting Control |
Use Scenario: Controlled power gating between starter battery and auxiliary circuits during engine cranking and restart phases. IC Role / Device Role / Timing Role: High-reliability P-channel switch managing bidirectional power flow with overcurrent and thermal monitoring. Use Value: 100 % UIS testing and 26 mJ EAS provide proven ruggedness against cranking-induced voltage spikes and inductive kickback. | Use Scenario: LED headlamp and fog lamp driver stage in heavy-duty trucks and buses operating at elevated ambient temperatures. IC Role / Device Role / Timing Role: High-side dimming switch supporting PWM-based brightness control with minimal conduction loss. Use Value: Wettable flank terminals and AEC-Q101 qualification ensure long-term solder joint integrity in vibration-prone lighting housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω @ -10 V), no AEC-Q101 qualification, no wettable flanks | Requires heatsink and manual AOI; limited to non-automotive industrial use | Choose only for cost-sensitive, non-automotive prototypes where thermal budget permits larger footprint |
| DMTH6016LPSQ-13 | Same PowerPAK 1212-8W package, -60 V, but lower ID (-12 A), slightly higher RDS(on) (0.075 Ω @ -10 V) | Marginally lower power handling; identical mounting and layout compatibility | Select when lower peak current (<12 A) suffices and tighter BOM consolidation with Diodes Inc. portfolio is prioritized |
Compared with IRF9530NPBF and DMTH6016LPSQ-13, SQ7415AENW-T1_GE3 delivers superior thermal performance (2.8 °C/W RthJC), automotive qualification, and wettable flank inspection - making it the preferred choice for production-grade 12 V/24 V high-side switches requiring zero-defect reliability.
Availability
SQ7415AENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and start-stop system battery management requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQ7415AENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ7415AENW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® family, engineered specifically for high-reliability, high-temperature power switching in engine bay and chassis electronics.
FAQ
What is the maximum continuous drain current for SQ7415AENW-T1_GE3 at 125 °C case temperature?
The SQ7415AENW-T1_GE3 supports -11 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 1212-8W package and ensures safe operation in high-ambient environments such as engine compartments. The -16 A rating applies only at TC = 25 °C.
Does SQ7415AENW-T1_GE3 support 5 V gate drive in automotive applications?
Yes, SQ7415AENW-T1_GE3 is fully functional with -4.5 V gate drive, delivering 0.090 Ω RDS(on) at that voltage. Its VGS(th) range of -1.5 V to -2.5 V ensures reliable turn-on using standard 5 V microcontroller outputs, eliminating need for gate level shifters in BCM and ECU designs.
Is SQ7415AENW-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQ7415AENW-T1_GE3 is AEC-Q101 qualified. This includes stress testing for temperature cycling, highly accelerated temperature-humidity stress (HAST), unbiased highly accelerated stress (uHAST), and electrostatic discharge (ESD) per human-body model (HBM) and charged-device model (CDM). Full qualification data is documented in Vishay's reliability report for part number 76598.
What is the significance of wettable flank terminals on SQ7415AENW-T1_GE3?
Wettable flank terminals on SQ7415AENW-T1_GE3 allow automated optical inspection (AOI) of solder fillets along the vertical sidewalls of the PowerPAK® 1212-8W package. This enables early detection of voiding, insufficient solder, or bridging - critical for zero-defect manufacturing in automotive electronics assembly lines.
Can SQ7415AENW-T1_GE3 be used in load-dump protected circuits?
Yes, SQ7415AENW-T1_GE3 is rated for -60 V VDS, exceeding the ISO 7637-2 Pulse 5a load-dump specification (up to +35 V on 12 V systems, +70 V on 24 V systems with clamp). Its 100 % UIS testing and 26 mJ EAS further ensure survivability during unclamped inductive transients common in automotive power networks.
SQ7415AENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1385 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 53W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SQ7415AENW-T1_GE3 FAQ
1.How can I place an order for SQ7415AENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ7415AENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ7415AENW-T1_GE3 reliable?
The price and inventory of SQ7415AENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ7415AENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ7415AENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ7415AENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ7415AENW-T1_GE3?
SQ7415AENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ7415AENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ7415AENW-T1_GE3?
For technical support, including SQ7415AENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ7415AENW-T1_GE3 requirements.
6.How does Aetrix verify that SQ7415AENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ7415AENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ7415AENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ7415AENW-T1_GE3?
All SQ7415AENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ7415AENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ7415AENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ7415AENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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