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Vishay Siliconix SQ9407EY-T1_BE3
- Part No.:
- SQ9407EY-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ9407EY-T1_BE3.pdf
- Description:
- MOSFET P-CH 60V 4.6A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:12,036
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Product details
Overview
SQ9407EY-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 0.085 Ω RDS(on) at VGS = -10 V, and -4.6 A continuous drain current at TC = 25 °C; it operates up to +175 °C junction temperature and is housed in a lead (Pb)-free, halogen-free SO-8 package for high-reliability power switching in vehicle body electronics.
For engineers reviewing the SQ9407EY-T1_BE3 datasheet, SQ9407EY-T1_BE3 pinout, SQ9407EY-T1_BE3 application, or SQ9407EY-T1_BE3 equivalent, this part supports critical design decisions involving low-side load switching, reverse polarity protection, and high-side switching with gate drive compatibility down to -4.5 V - all under AEC-Q101 qualification and 100 % Rg/UIS testing.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching performance, with verified RDS(on) of 0.067 Ω (typ.) at VGS = -10 V and ID = -3.5 A, and 0.087 Ω (typ.) at VGS = -4.5 V and ID = -2.5 A. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures robust turn-on control across automotive temperature extremes.
The device features integrated source-drain diode with VSD = -0.84 V (typ.) at IF = -3 A and VGS = 0 V, and exhibits dynamic parameters including Ciss = 912 pF (typ.), Qg = 26.5 nC (typ.), and td(off) = 36 ns (typ.), enabling efficient operation in PWM-controlled DC loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin |
| RDS(on) @ VGS = -10 V | 0.085 Ω max - Enables <1.5 W conduction loss at -4.6 A, supporting thermally constrained PCB layouts |
| RDS(on) @ VGS = -4.5 V | 0.115 Ω max - Ensures functional switching with standard 5 V logic-level gate drivers |
| ID (continuous) | -4.6 A @ TC = 25 °C - Sustains steady-state current in fan, lamp, and solenoid control circuits |
| TJ operating range | -55 °C to +175 °C - Meets under-hood thermal requirements per AEC-Q101 stress test conditions |
| Qg | 26.5 nC typ. - Supports <100 kHz PWM switching with moderate gate driver strength (e.g., TC4427) |
| EAS | 20 mJ - Withstands single-pulse inductive energy from relay or motor coil de-energization |
Pinout & Package
SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement; JEDEC-compliant footprint measuring 4.9 mm × 3.9 mm × 1.55 mm (D × E × A), 1.27 mm pitch, and 100 % lead (Pb)-free/halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1–3 and 8 internally bonded to reduce source inductance in high-di/dt switching |
| 4 | Gate (G) | Control terminal requiring -10 V for full enhancement; gate resistance Rg = 3.5–10.7 Ω limits ringing |
| 5, 6, 7 | Drain (D) | Power output node; pins 5–7 tied to exposed thermal pad for improved heat transfer to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules, body control units, and ADAS power domains |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness per JESD22-A115 |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs, improving efficiency in space-constrained modules |
| Enhanced thermal performance | RthJA = 100 °C/W (PCB mount), RthJF = 40 °C/W - enables >2.5 W dissipation with minimal heatsinking |
Applications
| Body Control Module Load Switching | Reverse Polarity Protection |
|---|---|
Use Scenario: Controlling interior lighting, door locks, and window lift motors in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Low-side switch for ground-referenced loads, driven by microcontroller GPIO or dedicated driver IC. Use Value: RDS(on) ≤ 0.115 Ω at -4.5 V ensures <1.3 W loss at 3.5 A, reducing thermal stress in sealed BCM enclosures. |
Use Scenario: Preventing damage from battery misconnection in infotainment head units and telematics gateways. IC Role / Device Role / Timing Role: High-side P-channel MOSFET placed between battery input and system rail, turned on when polarity is correct. Use Value: -60 V VDS rating accommodates 30 V transients during jump-start events without avalanche breakdown. |
| Engine Bay Fan Control | Seat Heater Power Management |
Use Scenario: PWM-regulated cooling fan operation in ambient temperatures up to +105 °C under hood. IC Role / Device Role / Timing Role: High-side switch modulating 12 V supply to brushless DC fan motor controller. Use Value: +175 °C TJ rating and RDS(on) stability over temperature ensure reliable duty-cycle control across full thermal range. |
Use Scenario: On/off control of resistive heating elements in automotive seating systems. IC Role / Device Role / Timing Role: Low-side switch activated by HVAC ECU to energize heater pads with soft-start sequencing. Use Value: 20 mJ EAS withstands inductive kickback from heater relay coils, eliminating need for external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BUK9Y2R5-60E | RDS(on) = 2.5 mΩ @ -10 V (lower), SO-8 package, but higher Qg (55 nC) and no AEC-Q101 documentation in public datasheet | Preferred where ultra-low conduction loss dominates over switching speed; requires validation for automotive qualification | Select if board layout allows higher gate drive current and thermal margin permits lower RDS(on) benefit |
| ON Semiconductor NTMFS4C06N | RDS(on) = 0.065 Ω @ -10 V, SO-8, AEC-Q101 qualified, but rated only to +150 °C junction temperature | Suitable for cabin applications with lower ambient thermal stress; not recommended for under-hood use above +150 °C | Choose for cost-sensitive non-engine-bay modules where 175 °C capability is unnecessary |
Compared with SQ9407EY-T1_BE3, the BUK9Y2R5-60E offers significantly lower conduction loss but demands stronger gate drive and lacks confirmed AEC-Q101 status, while the NTMFS4C06N matches qualification level but sacrifices 25 °C of maximum operating temperature - making SQ9407EY-T1_BE3 optimal for thermally demanding, fully qualified automotive deployments.
Availability
SQ9407EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, reverse polarity protection circuits, and engine bay fan control systems requiring stable component supply across extended production lifecycles.
Supply support for SQ9407EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and automotive qualification.
The SQ9407EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for robust, high-temperature switching in vehicle power distribution networks and electronic control units.
FAQ
What is the maximum continuous drain current for SQ9407EY-T1_BE3 at 125 °C case temperature?
The SQ9407EY-T1_BE3 supports -2.6 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained high-temperature operation and must be applied in thermal design calculations for under-hood applications. The SQ9407EY-T1_BE3 maintains safe operation within its RDS(on) and power dissipation limits across this range.
Is SQ9407EY-T1_BE3 suitable for high-side switching with 5 V gate drive?
Yes, SQ9407EY-T1_BE3 is rated for RDS(on) = 0.115 Ω max at VGS = -4.5 V and ID = -2.5 A, confirming functional enhancement with standard 5 V logic-level drivers. Its gate threshold voltage range (-1.5 V to -2.5 V) provides sufficient noise margin, and the SQ9407EY-T1_BE3 has been validated in high-side configurations for reverse polarity protection and load switching in 12 V automotive systems.
Does SQ9407EY-T1_BE3 include integrated ESD protection?
No, SQ9407EY-T1_BE3 does not specify integrated ESD protection in its datasheet. It features standard MOSFET gate oxide structure with ±20 V absolute maximum gate-source voltage, and system-level ESD protection (e.g., TVS diodes on gate traces) is recommended per ISO 10605 requirements for automotive PCBs. The SQ9407EY-T1_BE3 relies on external circuitry for robust electrostatic discharge immunity.
What is the thermal resistance from junction to ambient for SQ9407EY-T1_BE3 on a standard PCB?
The junction-to-ambient thermal resistance (RthJA) for SQ9407EY-T1_BE3 is 100 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides, per datasheet Note b. This value assumes standard SO-8 land pattern per Application Note 826 and is used to calculate maximum allowable power dissipation in natural-convection environments. The SQ9407EY-T1_BE3 benefits from its exposed drain pad to improve thermal coupling to the PCB.
How is SQ9407EY-T1_BE3 qualified for automotive use?
SQ9407EY-T1_BE3 is AEC-Q101 qualified, meaning it has passed stress tests including high-temperature operating life, temperature cycling, humidity bias HAST, and unclamped inductive switching. It also undergoes 100 % Rg and UIS screening per lot. These qualifications are documented in Vishay's certification reports referenced in the datasheet, confirming suitability for automotive power management applications. The SQ9407EY-T1_BE3 meets these requirements without exception.
SQ9407EY-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1140 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ9407EY-T1_BE3 FAQ
1.How can I place an order for SQ9407EY-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ9407EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ9407EY-T1_BE3 reliable?
The price and inventory of SQ9407EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ9407EY-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ9407EY-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ9407EY-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ9407EY-T1_BE3?
SQ9407EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ9407EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ9407EY-T1_BE3?
For technical support, including SQ9407EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ9407EY-T1_BE3 requirements.
6.How does Aetrix verify that SQ9407EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ9407EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ9407EY-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ9407EY-T1_BE3?
All SQ9407EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ9407EY-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ9407EY-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ9407EY-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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