Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQA310CEJW-T1_GE3

Name: SQA310CEJW-T1_GE3
Brand: Vishay Siliconix
SKU: SQA310CEJW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQA310CEJW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SQA310CEJW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 30 V (D-S)

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,955

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQA310CEJW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 30 V V_DS, 9 A continuous drain current at 25 °C, and R_DS(on) of 0.0190 Ω at V_GS = 10 V. It features wettable flank terminals in PowerPAK® SC-70W-6L package and operates up to +175 °C junction temperature. Used in high-reliability automotive load switching such as LED headlamp drivers.

For engineers reviewing the SQA310CEJW-T1_GE3 datasheet, SQA310CEJW-T1_GE3 pinout, SQA310CEJW-T1_GE3 application, or SQA310CEJW-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 175 °C operation, wettable flank solder joint inspection capability, and low R_DS(on) at 4.5 V gate drive for 12 V automotive systems.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive battery-rail applications. Its gate charge profile (Q_g = 7.9 nC typ., Q_gd = 1.5 nC) supports efficient PWM control in DC-DC converters and motor drivers.

The device integrates a robust body diode with t_rr = 14 ns (typ.) and Q_rr = 5 nC (typ.), enabling synchronous rectification and freewheeling in buck regulators without external diode addition. Thermal resistance R_thJC = 11 °C/W enables direct heatsinking via drain pads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 12 V automotive systems including load dump transients.
R_DS(on) @ V_GS = 10 V	0.0190 Ω - Enables <1.7 W conduction loss at 9 A, reducing thermal stress in compact PCB layouts.
R_DS(on) @ V_GS = 4.5 V	0.0320 Ω - Ensures full enhancement under cold-crank conditions (battery down to ~6 V).
I_D (continuous)	9 A @ T_C = 25 °C - Supports high-current loads like HVAC actuators or infotainment power rails.
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101 Grade 0.
Q_g	7.9 nC (typ.) - Low gate charge reduces driver power consumption and EMI in high-frequency switching.
t_r/t_f	3–6 ns / 2–5 ns - Fast edge rates support >1 MHz switching in space-constrained DC-DC modules.

Pinout & Package

Package: PowerPAK® SC-70W-6L - leadless, surface-mount, 2.05 mm × 2.05 mm footprint with wettable flank terminals for automated optical solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals connected to exposed copper pad - primary current path and thermal conduction path to PCB.
3	Gate (G)	Control input with 1.9–5.6 Ω gate resistance - limits dV/dt-induced shoot-through in half-bridge configurations.
6	Source (S)	Power return node; tied to internal source metallization and adjacent PCB ground plane for low-inductance loop closure.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTGB, HTRB, and UHAST - eliminates need for customer requalification.
Wettable flank terminals	Side-plated leads enable AOI-compatible solder joint inspection - critical for zero-defect manufacturing in Tier-1 automotive assembly lines.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor commutation.
175 °C maximum junction temperature	Enables placement near heat sources (e.g., engine control units) without derating - extends system-level thermal design margin.
TrenchFET® architecture	Optimized cell pitch and trench depth yield lower R_DS(on) × Q_g figure-of-merit - improves efficiency in 500 kHz–2 MHz DC-DC converters.

Applications

Automotive LED Headlamp Driver	Engine Control Unit (ECU) Load Switch
Use Scenario: High-side switching of 15–30 W LED arrays in adaptive driving beam (ADB) systems. IC Role / Device Role / Timing Role: N-channel MOSFET used as high-side switch with bootstrap gate driver; handles repetitive 100 Hz–1 kHz PWM dimming. Use Value: Low R_DS(on) at 4.5 V ensures stable on-state during cold-crank (6–8 V battery), while 175 °C rating permits mounting on same PCB as MCU.	Use Scenario: Controlled power delivery to solenoid valves, fuel injectors, or cooling fans in engine management systems. IC Role / Device Role / Timing Role: Low-side switching element driven by microcontroller GPIO with integrated protection logic. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee survival under inductive kickback from 12 V solenoids without external snubbers.
Automotive USB-C Power Delivery (PD) Controller Output Stage	Body Control Module (BCM) Window Lift Driver
Use Scenario: Secondary-side synchronous rectification in isolated 45 W USB-C PD buck-boost converters. IC Role / Device Role / Timing Role: N-channel MOSFET operating in synchronous rectifier mode with gate driven by dedicated controller IC. Use Value: Fast t_r/t_f and low Q_gd minimize switching losses at 1 MHz, improving converter efficiency above 94 %.	Use Scenario: Bidirectional DC motor control for power window lift/lower functions using H-bridge topology. IC Role / Device Role / Timing Role: One quadrant of dual half-bridge; conducts bidirectional current up to 8 A with body diode freewheeling. Use Value: Low V_SD (0.81 V typ.) and short t_rr reduce conduction loss and reverse recovery energy during direction reversal.

Automotive LED Headlamp Driver

Engine Control Unit (ECU) Load Switch

Use Scenario: High-side switching of 15–30 W LED arrays in adaptive driving beam (ADB) systems.

IC Role / Device Role / Timing Role: N-channel MOSFET used as high-side switch with bootstrap gate driver; handles repetitive 100 Hz–1 kHz PWM dimming.

Use Value: Low R_DS(on) at 4.5 V ensures stable on-state during cold-crank (6–8 V battery), while 175 °C rating permits mounting on same PCB as MCU.

Use Scenario: Controlled power delivery to solenoid valves, fuel injectors, or cooling fans in engine management systems.

IC Role / Device Role / Timing Role: Low-side switching element driven by microcontroller GPIO with integrated protection logic.

Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee survival under inductive kickback from 12 V solenoids without external snubbers.

Automotive USB-C Power Delivery (PD) Controller Output Stage

Body Control Module (BCM) Window Lift Driver

Use Scenario: Secondary-side synchronous rectification in isolated 45 W USB-C PD buck-boost converters.

IC Role / Device Role / Timing Role: N-channel MOSFET operating in synchronous rectifier mode with gate driven by dedicated controller IC.

Use Value: Fast t_r/t_f and low Q_gd minimize switching losses at 1 MHz, improving converter efficiency above 94 %.

Use Scenario: Bidirectional DC motor control for power window lift/lower functions using H-bridge topology.

IC Role / Device Role / Timing Role: One quadrant of dual half-bridge; conducts bidirectional current up to 8 A with body diode freewheeling.

Use Value: Low V_SD (0.81 V typ.) and short t_rr reduce conduction loss and reverse recovery energy during direction reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, R_DS(on) = 0.0014 Ω @ 10 V, PowerPAK SO-8 package (3.3 × 3.3 mm)	Larger footprint; higher current rating but less suitable for ultra-compact modules	Select when higher voltage margin or >20 A current handling is required; not drop-in due to package and pinout mismatch.
ON Semiconductor NTMFS4C023NT1G	30 V V_DS, R_DS(on) = 0.0023 Ω @ 10 V, PowerTDFN 3.3 × 3.3 mm	Higher R_DS(on) at 4.5 V (0.0038 Ω), no wettable flanks	Choose for cost-sensitive non-AEC-Q101 applications where optical solder inspection is not mandated.

Compared with BSC014N04LS6 and NTMFS4C023NT1G, the SQA310CEJW-T1_GE3 offers optimal balance of ultra-small 2.05 mm × 2.05 mm footprint, AEC-Q101 compliance, wettable flank inspection, and verified 4.5 V drive capability - making it uniquely suited for space- and reliability-constrained automotive modules.

Availability

SQA310CEJW-T1_GE3 is available at Aetrix Electronics and suitable for automotive LED lighting, engine control unit (ECU) load switching, and body control module (BCM) motor drivers requiring stable component supply across extended product lifecycles.

Supply support for SQA310CEJW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-efficiency power components.

The SQA310CEJW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SC-70W series, engineered specifically for space-constrained, thermally demanding 12 V vehicle subsystems requiring AEC-Q101 validation and process-controlled manufacturing.

FAQ

What is the maximum junction temperature rating for the SQA310CEJW-T1_GE3?

The SQA310CEJW-T1_GE3 has a maximum junction temperature (T_J) of +175 °C, validated per AEC-Q101 stress testing requirements. This rating allows operation in under-hood environments without thermal derating at ambient temperatures up to +125 °C when mounted on standard FR4 PCBs with appropriate copper area. The SQA310CEJW-T1_GE3 maintains specified R_DS(on) performance up to this limit.

Does the SQA310CEJW-T1_GE3 support 4.5 V gate drive in automotive applications?

Yes, the SQA310CEJW-T1_GE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 0.0320 Ω (max) at I_D = 2.5 A. This ensures reliable enhancement during automotive cold-crank conditions where battery voltage drops to 6–8 V, making the SQA310CEJW-T1_GE3 suitable for direct microcontroller GPIO drive without level-shifting circuitry.

Is the SQA310CEJW-T1_GE3 qualified to AEC-Q101 standards?

Yes, the SQA310CEJW-T1_GE3 is explicitly AEC-Q101 qualified, with full test reports covering HTGB, HTRB, UHAST, temperature cycling, and mechanical shock. This qualification is documented in Vishay's official certification files referenced in datasheet S23-0324-Rev. A. The SQA310CEJW-T1_GE3 meets Grade 0 requirements for automotive under-hood deployment.

What package type does the SQA310CEJW-T1_GE3 use, and why are wettable flanks important?

The SQA310CEJW-T1_GE3 uses the PowerPAK® SC-70W-6L package - a 2.05 mm × 2.05 mm leadless design with side-wettable flanks. These flanks allow automated optical inspection (AOI) of solder joints after reflow, a mandatory requirement for zero-defect manufacturing in Tier-1 automotive electronics. The SQA310CEJW-T1_GE3's tin-plated terminations ensure compatibility with standard Pb-free solder profiles.

What is the total gate charge (Q_g) specification for the SQA310CEJW-T1_GE3, and how does it impact switching performance?

The SQA310CEJW-T1_GE3 has a typical total gate charge (Q_g) of 7.9 nC at V_GS = 10 V, with Q_gd = 1.5 nC. This low Q_g enables fast turn-on/turn-off transitions (t_d(on) = 6 ns typ., t_f = 2 ns typ.), reducing switching losses in high-frequency DC-DC converters. When designing gate drivers for the SQA310CEJW-T1_GE3, this value directly determines required peak current and driver power dissipation.

SQA310CEJW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 535 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 13.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK®SC-70W-6

SQA310CEJW-T1_GE3 FAQ

1.How can I place an order for SQA310CEJW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQA310CEJW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQA310CEJW-T1_GE3 reliable?

The price and inventory of SQA310CEJW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA310CEJW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQA310CEJW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA310CEJW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQA310CEJW-T1_GE3?

SQA310CEJW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQA310CEJW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQA310CEJW-T1_GE3?

For technical support, including SQA310CEJW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA310CEJW-T1_GE3 requirements.

6.How does Aetrix verify that SQA310CEJW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQA310CEJW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA310CEJW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQA310CEJW-T1_GE3?

All SQA310CEJW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA310CEJW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQA310CEJW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQA310CEJW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …