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Vishay Siliconix SQA401EJ-T1_GE3

Part No.:
SQA401EJ-T1_GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
PowerPAK® SC-70-6
Datasheet:
AetrixSQA401EJ-T1_GE3.pdf
Description:
MOSFET P-CH 20V 3.75A PPAK SC70
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,300

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Product details

Overview

SQA401EJ-T1_GE3 from Vishay Siliconix is an AEC-Q101-qualified automotive P-channel MOSFET with -20 V VDS, 0.125 Ω RDS(on) at -4.5 V VGS, and -3.75 A continuous drain current, housed in a PowerPAK® SC-70-6L package for space-constrained engine control and body electronics.

For engineers reviewing the SQA401EJ-T1_GE3 datasheet, SQA401EJ-T1_GE3 pinout, SQA401EJ-T1_GE3 application, or SQA401EJ-T1_GE3 equivalent, this page delivers verified electrical specs, thermal performance data, PCB-mount thermal resistance (RthJA = 90 °C/W), and validated alternatives for automotive power switching design.

Technical Context

This P-channel enhancement-mode MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with 3.4 nC typical total gate charge and 11 °C/W junction-to-case thermal resistance. It supports 100% Rg and UIS testing per AEC-Q101 requirements.

Rated for operation from -55 °C to +175 °C junction temperature, it features a source-drain diode with -0.8 V typical forward voltage at -2 A and supports pulsed drain currents up to -12 A under defined test conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS -20 V - Maximum drain-source blocking voltage for 12 V automotive systems with load dump margin
RDS(on) @ -4.5 V 0.125 Ω - Enables <1 W conduction loss at 3.75 A, critical for thermally constrained modules
ID (continuous) -3.75 A - Sustained current capability at TC = 25 °C with standard PCB mounting
Qg (total) 3.4 nC - Low gate charge enables efficient PWM control with minimal driver power dissipation
RthJA 90 °C/W - Thermal resistance when mounted on 1" × 1" FR4 PCB, defining heatsinking requirements
TJ range -55 to +175 °C - Full AEC-Q101 operating range for under-hood and transmission control applications
VGS(th) -1.0 V (typ) - Threshold voltage ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

Package: PowerPAK® SC-70-6L - 2.05 mm × 2.05 mm surface-mount package with exposed drain pad for thermal and electrical performance; footprint compatible with JEDEC MS-012 variants.

Pin/Terminal Circuit Role Design Meaning
1, 2, 4 Drain (D) Internally connected to exposed copper pad - primary current path and thermal conduction path to PCB
3 Source (S) Main source terminal - connects to high-side load return or ground-referenced circuit node
5 Source (S) Secondary source connection - reduces source inductance and improves switching stability
6 Gate (G) Control input - requires no external pull-down resistor due to negative VGS(th) and low IGSS (±100 nA)

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive use including temperature cycling, HTRB, and UIS stress - required for engine management and ADAS subsystems
TrenchFET® architecture Delivers 25% lower RDS(on) vs. planar P-channel MOSFETs at same die size - improves power density in compact ECUs
100% Rg and UIS tested Ensures gate robustness against ESD and avalanche energy handling up to 3.2 mJ - eliminates field failures in inductive load switching
Low VGS(th) (-1.0 V typ) Guarantees full enhancement with 3.3 V microcontroller outputs - eliminates need for level-shifting in modern low-voltage domains
Exposed drain thermal pad Enables direct thermal coupling to PCB copper - achieves 11 °C/W RthJF for high-reliability thermal management

Applications

Engine Control Module (ECM) Body Control Module (BCM)

Use Scenario: Switching 12 V solenoid valves and fuel injectors in gasoline/diesel engine management units.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling load current with microcontroller-compatible gate drive.

Use Value: -175 °C rated junction temperature and AEC-Q101 qualification ensure reliability during extended under-hood thermal exposure.

Use Scenario: Controlling interior lighting, window lift motors, and door lock actuators in centralized body electronics.

IC Role / Device Role / Timing Role: Load switch enabling controlled power-up/down sequencing and short-circuit protection.

Use Value: 0.125 Ω RDS(on) minimizes voltage drop and self-heating during sustained 3 A loads, extending module lifetime.

Transmission Control Unit (TCU) Advanced Driver Assistance Systems (ADAS)

Use Scenario: Driving electromagnetic clutches and shift solenoids in automatic and dual-clutch transmissions.

IC Role / Device Role / Timing Role: Robust P-channel switch handling repetitive inductive transients and reverse battery conditions.

Use Value: 3.2 mJ single-pulse avalanche energy rating protects against inductive kickback without external snubbers.

Use Scenario: Power gating radar sensor supply rails and camera module bias circuits in front/rear ADAS controllers.

IC Role / Device Role / Timing Role: Precision-controlled power switch supporting functional safety (ASIL-B) power domain isolation.

Use Value: -55 °C to +175 °C operation and 100% UIS screening meet ASIL-B hardware confidence requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2013LFG-7 Higher RDS(on) (0.155 Ω @ -4.5 V), same PowerPAK SC-70-6L package, no AEC-Q101 certification Targeted at industrial/commercial rather than automotive applications; lacks automotive qualification documentation Select only if AEC-Q101 compliance is not required and higher conduction loss is acceptable
SI2301DS-T1-GE3 Lower current rating (-2.7 A), similar RDS(on) (0.135 Ω @ -4.5 V), same package, AEC-Q101 qualified Optimized for lower-power body electronics; insufficient for ECM/TCU peak current demands Choose for cost-sensitive BCM submodules where 2.7 A max current suffices and footprint reuse is prioritized

Compared with DMN2013LFG-7 and SI2301DS-T1-GE3, the SQA401EJ-T1_GE3 uniquely balances AEC-Q101 compliance, -3.75 A current capability, and 0.125 Ω RDS(on) in the SC-70-6L footprint - making it the only option meeting full engine/transmission thermal and reliability requirements without layout change.

Availability

SQA401EJ-T1_GE3 is available at Aetrix Electronics and suitable for engine control modules, body control modules, and transmission control units requiring stable component supply across automotive production lifecycles.

Supply support for SQA401EJ-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation infrastructure.

The SQA401EJ-T1_GE3 belongs to Vishay's automotive-grade TrenchFET® P-channel MOSFET product line, engineered specifically for high-temperature, high-reliability switching in engine, transmission, and chassis control systems.

FAQ

What is the maximum continuous drain current rating for SQA401EJ-T1_GE3 at 125 °C case temperature?

The SQA401EJ-T1_GE3 maintains -3.75 A continuous drain current rating even at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification for sustained high-temperature operation in under-hood environments. The SQA401EJ-T1_GE3 does not derate current until exceeding 125 °C case temperature.

Does SQA401EJ-T1_GE3 support reverse battery protection in automotive applications?

Yes, the SQA401EJ-T1_GE3 supports reverse battery protection due to its P-channel configuration and -20 V VDS rating, which allows it to block reverse polarity up to ±20 V. Its -175 °C to +175 °C operating range and AEC-Q101 qualification make it suitable for permanent installation in vehicle power distribution networks where reverse battery events may occur.

What is the typical gate threshold voltage (VGS(th)) of SQA401EJ-T1_GE3, and how does it affect microcontroller compatibility?

The SQA401EJ-T1_GE3 has a typical VGS(th) of -1.0 V, with a range of -0.6 V to -1.5 V. This low threshold enables full enhancement using standard 3.3 V or 5 V microcontroller GPIOs without external level shifting - a key advantage over higher-threshold P-channel MOSFETs that require dedicated gate drivers. The SQA401EJ-T1_GE3 thus simplifies interface design in modern low-voltage automotive ECUs.

How is thermal performance characterized for SQA401EJ-T1_GE3 on a standard PCB?

SQA401EJ-T1_GE3 thermal performance is characterized with RthJA = 90 °C/W when mounted on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. Its RthJF = 11 °C/W confirms efficient heat transfer from junction to exposed drain pad. These values are measured per JEDEC JESD51-2 and JESD51-14 standards, and the SQA401EJ-T1_GE3 datasheet provides normalized transient thermal impedance curves for dynamic thermal modeling.

Is SQA401EJ-T1_GE3 suitable for driving inductive loads like solenoids, and what protection features does it include?

Yes, the SQA401EJ-T1_GE3 is specifically designed for inductive load switching in automotive systems. It includes 100% UIS (unclamped inductive switching) testing with a rated single-pulse avalanche energy of 3.2 mJ, ensuring robustness against voltage spikes from solenoid and relay coil de-energization. Its -8 A pulsed drain current rating and integrated source-drain diode further support reliable inductive load control without external flyback components in many cases. The SQA401EJ-T1_GE3 also undergoes 100% Rg testing to guarantee gate integrity during fast switching.

SQA401EJ-T1_GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
PowerPAK® SC-70-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
3.75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
5.5 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
13.6W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerPAK® SC-70-6 Single

SQA401EJ-T1_GE3 FAQ

1.How can I place an order for SQA401EJ-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQA401EJ-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQA401EJ-T1_GE3 reliable?

The price and inventory of SQA401EJ-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA401EJ-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQA401EJ-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA401EJ-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQA401EJ-T1_GE3?

SQA401EJ-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQA401EJ-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQA401EJ-T1_GE3?

For technical support, including SQA401EJ-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA401EJ-T1_GE3 requirements.

6.How does Aetrix verify that SQA401EJ-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQA401EJ-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA401EJ-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQA401EJ-T1_GE3?

All SQA401EJ-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA401EJ-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQA401EJ-T1_GE3 part is unused and in its original packaging.

Return procedure for SQA401EJ-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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