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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQA407CEJW-T1_GE3

Name: SQA407CEJW-T1_GE3
Brand: Vishay Siliconix
SKU: SQA407CEJW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQA407CEJW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SQA407CEJW-T1_GE3.pdf

Description:: AUTOMOTIVE P-CHANNEL 20 V (D-S)

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Product details

Overview

SQA407CEJW-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SC-70W-6L package, rated for -20 V V_DS, 0.025 Ω R_DS(on) at -4.5 V V_GS, and -9 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch in low-voltage automotive power distribution systems.

For engineers reviewing the SQA407CEJW-T1_GE3 datasheet, SQA407CEJW-T1_GE3 pinout, SQA407CEJW-T1_GE3 application, or SQA407CEJW-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, wettable flank terminals for automated optical inspection, -175 °C maximum junction temperature, and 100 % R_g and UIS testing for robustness in automotive environments.

Technical Context

This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Q_g = 15.7–24 nC). Its body diode features t_rr = 13–26 ns and Q_rr = 6–12 nC, supporting synchronous rectification and flyback recovery in compact DC/DC converters.

The device operates with gate threshold voltage V_GS(th) = -0.6 to -1.3 V and is specified for stable performance across -55 °C to +175 °C junction temperature range. Its R_thJA = 90 °C/W (PCB mount) and R_thJF = 11 °C/W enable thermal management in space-constrained automotive modules without heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for 12 V automotive rail protection
R_DS(on) @ V_GS = -4.5 V	0.025 Ω - Enables <100 mW conduction loss at -4.5 A, critical for thermally constrained PCBs
I_D (continuous)	-9 A @ T_C = 25 °C - Supports high-current load switching in engine control units and body electronics
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101 stress test conditions
Q_g	15.7–24 nC - Balances switching speed and gate drive power in 100 kHz–1 MHz DC/DC controllers
C_iss	1500–2100 pF - Determines gate drive strength needed for clean turn-on in noisy automotive EMI environments
V_GS(th)	-0.6 to -1.3 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

Package: PowerPAK® SC-70W-6L - leadless, surface-mount package with wettable flank terminals for solder-joint inspection and enhanced thermal conduction via exposed drain paddle.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Internally connected to exposed copper paddle; primary heat path and high-current return path
3	Gate (G)	Control terminal; requires ≤ ±12 V rating and low-inductance routing to minimize ringing
6	Source (S)	Reference node for gate drive; tied to system ground or low-side sensing point

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates need for additional qualification by Tier 1 suppliers
Wettable flank terminals	Enables automated optical inspection (AOI) of solder fillets on all six side terminals - improves first-pass yield in SMT lines
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures reliability in motor drive and solenoid control
TrenchFET® technology	Delivers 20 % lower R_DS(on) vs. planar P-channel MOSFETs at same die size - reduces board area and thermal footprint

Applications

Body Control Module (BCM)	Engine Control Unit (ECU) Power Management
Use Scenario: Switching 12 V loads such as interior lighting, door locks, and HVAC actuators in modern BCMs. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery with fast turn-off to prevent backfeed during battery disconnect. Use Value: Low R_DS(on) minimizes voltage drop and self-heating; -175 °C T_J rating supports operation near hot engine compartments.	Use Scenario: Supplying auxiliary rails (e.g., sensor bias, CAN transceiver V_CC) from main battery with overvoltage and reverse-polarity protection. IC Role / Device Role / Timing Role: Reverse-battery protection switch placed between battery input and downstream LDOs or DC/DC converters. Use Value: P-channel topology enables simple gate drive from regulated 5 V rail; AEC-Q101 qualification ensures long-term field reliability.
Advanced Driver Assistance Systems (ADAS) Camera Power	Electric Power Steering (EPS) Motor Driver Stage
Use Scenario: Providing clean, sequenced power to CMOS image sensors and ISP processors in rear-view and surround-view camera modules. IC Role / Device Role / Timing Role: Soft-start enabled load switch managing inrush current during camera boot-up to avoid brownout of shared 12 V rail. Use Value: Controlled dV/dt via gate resistor tuning and low C_iss reduce EMI coupling into analog video paths.	Use Scenario: Driving half-bridge high-side gates or enabling auxiliary power stages in EPS motor control boards. IC Role / Device Role / Timing Role: Level-shifting interface between MCU GPIO and high-side gate driver IC supply rail. Use Value: Fast t_d(off) = 29–44 ns and low Q_gd support precise timing alignment in 20–50 kHz PWM schemes.

Body Control Module (BCM)

Engine Control Unit (ECU) Power Management

Use Scenario: Switching 12 V loads such as interior lighting, door locks, and HVAC actuators in modern BCMs.

IC Role / Device Role / Timing Role: High-side load switch controlling power delivery with fast turn-off to prevent backfeed during battery disconnect.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating; -175 °C T_J rating supports operation near hot engine compartments.

Use Scenario: Supplying auxiliary rails (e.g., sensor bias, CAN transceiver V_CC) from main battery with overvoltage and reverse-polarity protection.

IC Role / Device Role / Timing Role: Reverse-battery protection switch placed between battery input and downstream LDOs or DC/DC converters.

Use Value: P-channel topology enables simple gate drive from regulated 5 V rail; AEC-Q101 qualification ensures long-term field reliability.

Advanced Driver Assistance Systems (ADAS) Camera Power

Electric Power Steering (EPS) Motor Driver Stage

Use Scenario: Providing clean, sequenced power to CMOS image sensors and ISP processors in rear-view and surround-view camera modules.

IC Role / Device Role / Timing Role: Soft-start enabled load switch managing inrush current during camera boot-up to avoid brownout of shared 12 V rail.

Use Value: Controlled dV/dt via gate resistor tuning and low C_iss reduce EMI coupling into analog video paths.

Use Scenario: Driving half-bridge high-side gates or enabling auxiliary power stages in EPS motor control boards.

IC Role / Device Role / Timing Role: Level-shifting interface between MCU GPIO and high-side gate driver IC supply rail.

Use Value: Fast t_d(off) = 29–44 ns and low Q_gd support precise timing alignment in 20–50 kHz PWM schemes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LPS-13	R_DS(on) = 0.018 Ω @ -4.5 V, but rated only to +150 °C TJ and not AEC-Q101 qualified	Lacks automotive qualification; suitable for industrial or consumer DC/DC where extended temperature is not required	Select when cost sensitivity outweighs automotive compliance and thermal margin is sufficient
SIR178DP-T1-GE3	Higher R_DS(on) = 0.032 Ω @ -4.5 V, but shares PowerPAK SC-70W-6L footprint and AEC-Q101 rating	Lower current capability (-7.5 A) limits use in high-power load switching	Choose when lower conduction loss is less critical than proven supply chain availability and identical layout reuse

Compared with DMT6009LPS-13 and SIR178DP-T1-GE3, the SQA407CEJW-T1_GE3 delivers optimal balance of low on-resistance, full AEC-Q101 compliance, and +175 °C operation - making it the preferred choice for safety-critical under-hood and ADAS power switches where thermal headroom and qualification rigor are non-negotiable.

Availability

SQA407CEJW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine control units, ADAS camera modules, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for SQA407CEJW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-performance components for automotive, industrial, and computing markets.

The SQA407CEJW-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® P-channel MOSFET product line, engineered specifically for robust, low-R_DS(on) power switching in harsh automotive environments up to +175 °C junction temperature.

FAQ

What is the maximum gate-source voltage rating for the SQA407CEJW-T1_GE3?

The SQA407CEJW-T1_GE3 has a maximum gate-source voltage rating of ±12 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. The device is not intended for continuous use with positive gate voltage > 3.0 V, per datasheet note f. Designers must ensure gate drive circuits clamp V_GS within these bounds during both static and transient conditions to maintain long-term reliability of the SQA407CEJW-T1_GE3.

Is the SQA407CEJW-T1_GE3 suitable for reverse-battery protection in automotive applications?

Yes, the SQA407CEJW-T1_GE3 is well-suited for reverse-battery protection due to its P-channel configuration, -20 V V_DS rating, and AEC-Q101 qualification. When placed between battery input and downstream circuitry, it blocks reverse polarity while conducting forward current with only ~45 mV drop at -4.5 A (based on 0.01 Ω typical R_DS(on)). Its -175 °C T_J rating and 100 % UIS testing further ensure survivability during jump-start transients. This makes the SQA407CEJW-T1_GE3 a robust solution for protecting sensitive automotive ECUs and sensors.

Does the SQA407CEJW-T1_GE3 have wettable flank terminals, and why does that matter?

Yes, the SQA407CEJW-T1_GE3 uses PowerPAK SC-70W-6L packaging with wettable flank terminals - meaning the vertical sidewalls of all six terminals are tin-plated and designed to form visible solder fillets during reflow. This enables automated optical inspection (AOI) of solder joint integrity, significantly improving process control and first-pass yield in high-volume automotive SMT lines. Unlike standard SC-70 packages, the wettable flanks eliminate reliance on X-ray inspection for hidden joint verification - a key requirement for IATF 16949-compliant manufacturing of the SQA407CEJW-T1_GE3.

What is the typical total gate charge (Q_g) of the SQA407CEJW-T1_GE3, and how does it affect switching performance?

The SQA407CEJW-T1_GE3 has a typical total gate charge (Q_g) of 15.7 nC at V_GS = -4.5 V and V_DS = -10 V, with a maximum of 24 nC. This value directly determines the energy required to charge and discharge the gate, influencing switching speed and gate driver sizing. At 100 kHz switching frequency and -4.5 V drive, Q_g contributes ~0.7 mW of dynamic gate loss. Combined with its low Q_gd (4.6 nC typ), the SQA407CEJW-T1_GE3 achieves fast, controllable transitions - essential for minimizing shoot-through risk in half-bridge configurations and reducing EMI in automotive power stages.

How does the SQA407CEJW-T1_GE3 perform at elevated temperatures, and what is its R_DS(on) derating behavior?

The SQA407CEJW-T1_GE3 maintains functional performance up to +175 °C junction temperature, with R_DS(on) increasing predictably: 0.0250 Ω at 25 °C, 0.0337 Ω at 125 °C, and 0.0381 Ω at 175 °C (all at V_GS = -4.5 V, I_D = -4.5 A). This ~52 % increase from 25 °C to 175 °C is typical for silicon MOSFETs and is fully characterized in the datasheet. Designers can use the normalized R_DS(on) vs. T_J curve (Fig. 6) to model conduction loss across operating conditions - critical for thermal design validation of the SQA407CEJW-T1_GE3 in under-hood applications.

SQA407CEJW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 13.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK®SC-70W-6

SQA407CEJW-T1_GE3 FAQ

1.How can I place an order for SQA407CEJW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQA407CEJW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQA407CEJW-T1_GE3 reliable?

The price and inventory of SQA407CEJW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA407CEJW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQA407CEJW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA407CEJW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQA407CEJW-T1_GE3?

SQA407CEJW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQA407CEJW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQA407CEJW-T1_GE3?

For technical support, including SQA407CEJW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA407CEJW-T1_GE3 requirements.

6.How does Aetrix verify that SQA407CEJW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQA407CEJW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA407CEJW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQA407CEJW-T1_GE3?

All SQA407CEJW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA407CEJW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQA407CEJW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQA407CEJW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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