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Vishay Siliconix SQA410CEJW-T1_GE3
- Part No.:
- SQA410CEJW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6 Dual
- Datasheet:
-
SQA410CEJW-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 20 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:8,303
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Product details
Overview
SQA410CEJW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET with 20 V VDS, 7.8 A continuous drain current at 25 °C, and RDS(on) of 21 mΩ at VGS = 4.5 V and ID = 5 A - optimized for high-efficiency DC-DC converters in engine control units and ADAS power stages.
For engineers reviewing the SQA410CEJW-T1_GE3 datasheet, SQA410CEJW-T1_GE3 pinout, SQA410CEJW-T1_GE3 application, or SQA410CEJW-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, wettable flank PowerPAK SC-70W-6L package for automated optical inspection, and 175 °C junction temperature rating for under-hood automotive use.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 5.1 nC (typ.) at VGS = 4.5 V, enabling high-frequency operation in synchronous buck regulators. Its body diode exhibits trr = 7.2 ns (typ.) and Qrr = 1.8 nC (typ.), supporting efficient reverse recovery in hard-switched topologies.
The device is fully characterized across temperature: RDS(on) remains ≤ 45.4 mΩ at TJ = 175 °C and VGS = 4.5 V, and VGS(th) is tightly specified from 0.4 V to 1.1 V, ensuring robust gate drive compatibility with 1.8 V–4.5 V logic-level controllers in automotive microcontroller domains.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports 12 V automotive battery rail with margin against load dump transients |
| RDS(on) @ VGS = 4.5 V | 21 mΩ (typ.) - enables <150 mW conduction loss at 7.8 A, critical for thermally constrained ECUs |
| ID (continuous) | 7.8 A @ TC = 25 °C - rated for sustained current in compact power stages without forced cooling |
| TJ max | +175 °C - qualified for under-hood environments including transmission control modules |
| Qg | 5.1 nC (typ.) - reduces gate drive power and enables >1 MHz switching in space-constrained DC-DC designs |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronics per JESD22-A108 |
| Package | PowerPAK SC-70W-6L - wettable flank terminals enable AOI-compatible solder joint inspection |
Pinout & Package
PowerPAK SC-70W-6L is a 2.05 mm × 2.05 mm leadless surface-mount package with exposed drain paddle for thermal performance. Wettable flank terminals facilitate post-solder inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | Drain (D) | Four parallel drain terminals connected to internal die paddle - lowers RDS(on) and improves thermal path to PCB |
| 3 | Gate (G) | Single gate input with Rg = 4.1–12.5 Ω - supports direct drive from low-power MCU GPIOs |
| 6 | Source (S) | Source terminal tied to source metallization - forms return path for load current and body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 21 mΩ RDS(on) in 2.05 mm × 2.05 mm footprint - 3× smaller than SO-8 equivalents at same RDS(on) |
| AEC-Q101 qualification | Validated for automotive applications including engine management, ADAS cameras, and body control modules |
| Wettable flank terminals | Enables automated optical inspection of solder fillets - eliminates X-ray requirement for high-reliability production |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and single-pulse avalanche ruggedness up to 5 mJ - critical for unregulated input transients |
| 175 °C operation | Supports full-rated current in ambient temperatures up to +125 °C with derating - suitable for transmission and powertrain modules |
Applications
| Engine Control Unit (ECU) Power Stage | ADAS Camera Module DC-DC Converter |
|---|---|
Use Scenario: High-side switch in 5 V/3.3 V point-of-load regulator supplying MCU and CAN transceiver. IC Role / Device Role / Timing Role: N-channel high-side MOSFET controlled by gate driver IC with bootstrap supply. Use Value: Low 21 mΩ RDS(on) minimizes dropout and thermal rise in sealed ECU housing; AEC-Q101 ensures lifetime reliability over 15-year vehicle service life. | Use Scenario: Synchronous rectifier in 12 V to 5 V buck converter powering image sensor and ISP. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by PWM controller with 4.5 V gate output. Use Value: Fast 13 ns rise time and 10 ns fall time support >2 MHz switching, reducing inductor size; wettable flanks ensure solder joint integrity in vibration-prone camera mounts. |
| Electric Power Steering (EPS) Sensor Supply | Body Control Module (BCM) Load Switch |
Use Scenario: Protected 20 V input stage feeding isolated DC-DC for torque and position sensors. IC Role / Device Role / Timing Role: Input protection switch with integrated avalanche energy handling. Use Value: 5 mJ EAS rating absorbs load dump spikes without external TVS; 175 °C rating maintains function during EPS motor thermal soak. | Use Scenario: Smart high-side load switch controlling LED lighting or window motor drivers. IC Role / Device Role / Timing Role: Discrete N-channel switch with logic-level gate threshold (0.6 V typ.) for direct MCU interface. Use Value: 0.4–1.1 V VGS(th) range ensures turn-on with 1.8 V I/O - eliminates need for level shifters in modern low-voltage BCMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2016LFG-7 | RDS(on) = 19.5 mΩ @ 4.5 V but in 2 mm × 2 mm WDFN; no AEC-Q101 certification | Not qualified for automotive safety-critical systems; limited to infotainment or comfort electronics | Select only for non-AEC applications where lower RDS(on) outweighs qualification requirements |
| IPD20N03S4L-25 | 30 V VDS, 20 mΩ RDS(on), TO-252 package - larger footprint and higher thermal resistance (RthJC = 3.5 °C/W vs. 11 °C/W) | Requires PCB area increase and heatsinking; suited for higher-power (>15 A) loads | Choose when system requires 30 V rating or higher current capability, accepting larger layout impact |
Compared with DMN2016LFG-7 and IPD20N03S4L-25, the SQA410CEJW-T1_GE3 uniquely balances AEC-Q101 compliance, ultra-compact wettable-flank packaging, and 175 °C operation - making it the only option for space- and temperature-constrained automotive power stages requiring zero-defect solder joint verification.
Availability
SQA410CEJW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, ADAS camera modules, and electric power steering systems requiring stable component supply across extended automotive product lifecycles.
Supply support for SQA410CEJW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQA410CEJW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® family, engineered specifically for high-density, high-reliability power conversion in under-hood and safety-critical electronic control units.
FAQ
What is the maximum continuous drain current rating for SQA410CEJW-T1_GE3 at 125 °C case temperature?
The SQA410CEJW-T1_GE3 maintains a continuous drain current rating of 7.8 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and stable RDS(on) performance up to elevated temperatures - critical for sustained operation in hot under-hood environments where the SQA410CEJW-T1_GE3 is commonly deployed.
Does SQA410CEJW-T1_GE3 support 1.8 V logic-level gate drive?
Yes, the SQA410CEJW-T1_GE3 is fully compatible with 1.8 V gate drive: its RDS(on) is specified at 38 mΩ (max) with VGS = 1.8 V and ID = 3 A. The gate threshold voltage range of 0.4 V to 1.1 V ensures reliable turn-on even with marginal gate drive margins, making the SQA410CEJW-T1_GE3 suitable for direct interface with low-voltage MCUs in modern automotive body control modules.
What is the significance of wettable flank terminals on SQA410CEJW-T1_GE3?
The wettable flank terminals on the SQA410CEJW-T1_GE3 extend solder plating vertically along the side walls of the PowerPAK SC-70W-6L package, enabling automated optical inspection (AOI) of solder fillet quality. This eliminates reliance on X-ray for process validation - a key requirement for high-volume automotive manufacturing where the SQA410CEJW-T1_GE3 is used in safety-critical power stages.
Is SQA410CEJW-T1_GE3 qualified for automotive applications beyond AEC-Q101?
The SQA410CEJW-T1_GE3 is explicitly AEC-Q101 qualified per the Vishay datasheet (S21-0820-Rev. A), with additional qualification including 100 % Rg and UIS testing. It is not qualified to ISO/TS 16949 or IATF 16949 at the part level - those are manufacturing system certifications. The SQA410CEJW-T1_GE3 meets the component-level stress test requirements mandated for automotive electronics, confirming its suitability for ECU, ADAS, and powertrain applications.
What is the typical total gate charge (Qg) of SQA410CEJW-T1_GE3 and how does it affect switching performance?
The SQA410CEJW-T1_GE3 has a typical total gate charge (Qg) of 5.1 nC at VGS = 4.5 V, enabling fast switching with low gate drive power consumption. This value directly determines turn-on/turn-off times - e.g., with 1 Ω gate resistance, td(on) is 7 ns (typ.). For high-frequency DC-DC converters, this low Qg allows the SQA410CEJW-T1_GE3 to operate efficiently above 1 MHz while minimizing driver losses.
SQA410CEJW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6 Dual
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 525 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 13.6W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6 Dual
SQA410CEJW-T1_GE3 FAQ
1.How can I place an order for SQA410CEJW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQA410CEJW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQA410CEJW-T1_GE3 reliable?
The price and inventory of SQA410CEJW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA410CEJW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQA410CEJW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA410CEJW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQA410CEJW-T1_GE3?
SQA410CEJW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQA410CEJW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQA410CEJW-T1_GE3?
For technical support, including SQA410CEJW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA410CEJW-T1_GE3 requirements.
6.How does Aetrix verify that SQA410CEJW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQA410CEJW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA410CEJW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQA410CEJW-T1_GE3?
All SQA410CEJW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA410CEJW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQA410CEJW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQA410CEJW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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