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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQA440CEJW-T1_GE3

Name: SQA440CEJW-T1_GE3
Brand: Vishay Siliconix
SKU: SQA440CEJW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQA440CEJW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-PowerVDFN

Datasheet:: SQA440CEJW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 40 V (D-S)

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Product details

Overview

SQA440CEJW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V V_DS, 9 A continuous drain current at 25 °C, and R_DS(on) of 14.4 mΩ at V_GS = 10 V. It features wettable flank terminals in PowerPAK® SC-70W-6L package and operates up to +175 °C junction temperature - used in high-reliability DC-DC converter high-side switches and automotive body control modules.

For engineers reviewing the SQA440CEJW-T1_GE3 datasheet, SQA440CEJW-T1_GE3 pinout, SQA440CEJW-T1_GE3 application, or SQA440CEJW-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS testing, thermal performance (R_thJC = 11 °C/W), and compatibility with automated optical inspection (AOI) due to wettable flanks.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in space-constrained automotive power stages. Its gate charge profile (Q_g = 11.4–17.5 nC typ/max at V_GS = 10 V) supports efficient PWM operation in 48 V subsystems, while the body diode exhibits t_rr = 15–30 ns and Q_rr = 7–14 nC for reduced switching loss during synchronous rectification.

The device is characterized across -55 °C to +175 °C and validated for single-pulse avalanche energy (E_AS = 7.81 mJ) and repetitive UIS robustness. Its R_DS(on) remains stable over temperature - 26.3 mΩ max at 175 °C and V_GS = 10 V - enabling reliable operation in under-hood environments without derating penalties typical of non-automotive MOSFETs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage compatible with 36 V nominal automotive battery systems and transient clamping to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	14.4 mΩ max - enables ≤1.3 W conduction loss at 9 A, reducing heatsink requirements in compact ECUs.
I_D continuous @ T_C = 25 °C	9 A - supports high-current loads such as solenoid drivers and LED matrix backlights without external current sharing.
T_J operating range	-55 °C to +175 °C - qualified for engine bay, transmission control, and ADAS ECU mounting locations per AEC-Q101 stress test conditions.
Q_g total	11.4–17.5 nC - allows fast turn-on with low gate drive power; compatible with standard 3.3 V/5 V microcontroller GPIOs via buffer stage.
E_AS	7.81 mJ - withstands inductive load switching events (e.g., fuel injector turn-off) without failure under defined test conditions.
R_thJC	11 °C/W - enables direct thermal coupling to PCB copper pour or metal-core substrate for effective heat extraction in high-power density layouts.

Pinout & Package

Package: PowerPAK® SC-70W-6L - leadless, surface-mount, 2.05 mm × 2.05 mm footprint with wettable flank terminals for AOI-compatible solder joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals - reduce package inductance and current density; electrically tied internally to die drain metallization.
3	Gate (G)	Single gate input - low R_g (1.2–3.6 Ω) minimizes gate oscillation risk and supports clean edge rates up to 10 MHz switching.
6	Source (S)	Primary source connection - low-inductance path for return current; used with external Kelvin sense if precision current monitoring required.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including HTOL, TC, UHAST, and ESD tests - eliminates need for customer requalification in Tier-1 BOMs.
Wettable flank terminals	Exposed side-plated terminations enable automated X-ray and AOI verification of solder fillet integrity - critical for zero-defect manufacturing.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in harsh transients.
TrenchFET® technology	Optimized cell pitch and trench depth deliver best-in-class R_DS(on) × Q_g figure-of-merit (FOM) for 40 V class - improves efficiency in 100 kHz–1 MHz DC-DC converters.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive Body Control Module (BCM) Load Switch
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 8 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlled by MCU PWM output with external gate driver. Use Value: Low R_DS(on) minimizes I²R heating during extended duty cycles; 175 °C rating prevents thermal shutdown during prolonged idling or hot-soak conditions.	Use Scenario: Controlled power distribution to interior lighting, window motors, and HVAC actuators in centralized BCM architecture. IC Role / Device Role / Timing Role: Protected high-side load switch with integrated current sensing capability via R_DS(on) monitoring. Use Value: Wettable flanks ensure solder joint reliability across thermal cycling; AEC-Q101 qualification guarantees compliance with OEM functional safety requirements (e.g., ISO 26262 ASIL-B).
48 V Mild Hybrid DC-DC Converter High-Side Switch	ADAS Camera Module Power Sequencer
Use Scenario: Primary switch in bidirectional buck-boost converter linking 12 V and 48 V domains in 48 V mild hybrid vehicles. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating at 200–500 kHz with active gate control. Use Value: Fast t_r/t_f (4–6 ns / 3–5 ns) and low Q_gd (2.0 nC) reduce switching losses; R_thJC = 11 °C/W enables direct thermal interface to heatsink.	Use Scenario: Sequenced power-up/down of image sensor, ISP, and lens actuator in rear-view or surround-view camera systems. IC Role / Device Role / Timing Role: Precision-controlled high-side switch with soft-start and overcurrent protection via external circuitry. Use Value: Stable V_GS(th) (1.2–2.2 V) ensures predictable turn-on timing across temperature; low IDSS (<1 μA at 25 °C) prevents leakage-induced wake-up in sleep mode.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Body Control Module (BCM) Load Switch

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 8 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlled by MCU PWM output with external gate driver.

Use Value: Low R_DS(on) minimizes I²R heating during extended duty cycles; 175 °C rating prevents thermal shutdown during prolonged idling or hot-soak conditions.

Use Scenario: Controlled power distribution to interior lighting, window motors, and HVAC actuators in centralized BCM architecture.

IC Role / Device Role / Timing Role: Protected high-side load switch with integrated current sensing capability via R_DS(on) monitoring.

Use Value: Wettable flanks ensure solder joint reliability across thermal cycling; AEC-Q101 qualification guarantees compliance with OEM functional safety requirements (e.g., ISO 26262 ASIL-B).

48 V Mild Hybrid DC-DC Converter High-Side Switch

ADAS Camera Module Power Sequencer

Use Scenario: Primary switch in bidirectional buck-boost converter linking 12 V and 48 V domains in 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating at 200–500 kHz with active gate control.

Use Value: Fast t_r/t_f (4–6 ns / 3–5 ns) and low Q_gd (2.0 nC) reduce switching losses; R_thJC = 11 °C/W enables direct thermal interface to heatsink.

Use Scenario: Sequenced power-up/down of image sensor, ISP, and lens actuator in rear-view or surround-view camera systems.

IC Role / Device Role / Timing Role: Precision-controlled high-side switch with soft-start and overcurrent protection via external circuitry.

Use Value: Stable V_GS(th) (1.2–2.2 V) ensures predictable turn-on timing across temperature; low IDSS (<1 μA at 25 °C) prevents leakage-induced wake-up in sleep mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ lower at 10 V; larger PowerPAK SO-8 package (3.3 × 3.3 mm); higher Q_g (22 nC)	Better conduction efficiency but requires more PCB area and higher gate drive power	Select when thermal budget allows larger package and lowest possible R_DS(on) is prioritized over size and switching speed.
ON Semiconductor NTMFS4C026NT1G	R_DS(on) = 2.6 mΩ higher at 10 V; same PowerPAK SC-70W-6L footprint; AEC-Q101 qualified; Q_g = 15.5 nC	Drop-in replacement in layout; slightly higher conduction loss but identical assembly process	Select when footprint compatibility and supply chain diversification are critical, and 2.6 mΩ R_DS(on) increase is acceptable within system thermal margin.

Compared with BSC014N04LS6 and NTMFS4C026NT1G, the SQA440CEJW-T1_GE3 delivers optimal balance of ultra-compact size, industry-leading R_DS(on) × Q_g FOM, and full AEC-Q101 validation - making it preferred for next-gen ADAS and electrified vehicle power stages where board space and thermal density are constrained.

Availability

SQA440CEJW-T1_GE3 is available at Aetrix Electronics and suitable for automotive power management, engine control, and ADAS subsystems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SQA440CEJW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high-reliability, high-efficiency power solutions.

The SQA440CEJW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SC-70W series, designed specifically for space-constrained, thermally demanding 12 V/48 V automotive power switches requiring AOI-compatible packaging and extended temperature operation.

FAQ

What is the maximum continuous drain current rating for the SQA440CEJW-T1_GE3 at 125 °C case temperature?

The SQA440CEJW-T1_GE3 supports 9 A continuous drain current at T_C = 125 °C, matching its rating at 25 °C due to its optimized thermal design and 175 °C maximum junction temperature. This flat current derating curve simplifies thermal design in high-ambient environments like engine compartments, where sustained operation above 100 °C is common. The SQA440CEJW-T1_GE3 achieves this through low R_thJC (11 °C/W) and robust silicon die construction.

Does the SQA440CEJW-T1_GE3 have a specified body diode reverse recovery time (t_rr) and charge (Q_rr)?

Yes, the SQA440CEJW-T1_GE3 specifies t_rr = 15–30 ns and Q_rr = 7–14 nC under test conditions of I_F = 2 A and di/dt = 100 A/μs. These values are measured with the device in diode conduction mode and are critical for evaluating switching losses in synchronous rectification or freewheeling applications. The SQA440CEJW-T1_GE3's low Q_rr contributes directly to reduced E_SW in high-frequency DC-DC topologies.

Is the SQA440CEJW-T1_GE3 pin-to-pin compatible with other PowerPAK SC-70W-6L MOSFETs?

The SQA440CEJW-T1_GE3 uses the standard PowerPAK SC-70W-6L pinout (Drain-Drain-Gate-Drain-Drain-Source), and its mechanical footprint matches all devices in Vishay's SC-70W-6L family. However, electrical compatibility depends on R_DS(on), Q_g, and thermal ratings - for example, the NTMFS4C026NT1G shares identical pinout and package but has higher R_DS(on). The SQA440CEJW-T1_GE3 is not guaranteed as a drop-in replacement without verifying gate drive strength and thermal margins in the target application.

What does "wettable flank terminals" mean for the SQA440CEJW-T1_GE3, and why is it important?

Wettable flank terminals on the SQA440CEJW-T1_GE3 refer to tin-plated vertical sidewalls on all six package leads, enabling visible solder fillets during automated optical inspection (AOI). This feature is essential for zero-defect automotive manufacturing, as it allows inline verification of solder joint quality without requiring X-ray. The SQA440CEJW-T1_GE3's wettable flanks meet IPC-A-610 Class 3 requirements and support high-yield reflow processes per JEDEC J-STD-020.

Can the SQA440CEJW-T1_GE3 be used in circuits requiring 3.3 V logic-level gate drive?

The SQA440CEJW-T1_GE3 is not a logic-level MOSFET: its V_GS(th) range is 1.2–2.2 V, but R_DS(on) is specified at V_GS = 4.5 V (20 mΩ max) and 10 V (14.4 mΩ max). At 3.3 V, R_DS(on) increases significantly - typically >40 mΩ - resulting in excessive conduction loss. For 3.3 V drive, the SQA440CEJW-T1_GE3 requires a gate driver IC or level-shifting circuit; it is intended for use with 5 V or higher gate drive in automotive MCU or ASIC interfaces.

SQA440CEJW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14.4mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 13.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK®SC-70W-6

SQA440CEJW-T1_GE3 FAQ

1.How can I place an order for SQA440CEJW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQA440CEJW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQA440CEJW-T1_GE3 reliable?

The price and inventory of SQA440CEJW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA440CEJW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQA440CEJW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA440CEJW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQA440CEJW-T1_GE3?

SQA440CEJW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQA440CEJW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQA440CEJW-T1_GE3?

For technical support, including SQA440CEJW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA440CEJW-T1_GE3 requirements.

6.How does Aetrix verify that SQA440CEJW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQA440CEJW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA440CEJW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQA440CEJW-T1_GE3?

All SQA440CEJW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA440CEJW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQA440CEJW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQA440CEJW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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