Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQA444CEJW-T1_GE3

Name: SQA444CEJW-T1_GE3
Brand: Vishay Siliconix
SKU: SQA444CEJW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQA444CEJW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SQA444CEJW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 60 V (D-S)

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:674

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQA444CEJW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V (D-S) MOSFET in PowerPAK® SC-70W-6L package, rated for continuous drain current of 9 A at 25 °C and 7.7 A at 125 °C, with R_DS(on) = 0.0390 Ω at V_GS = 10 V and 0.0526 Ω at V_GS = 4.5 V, operating up to +175 °C junction temperature - used in high-reliability DC-DC converter high-side switches.

For engineers reviewing the SQA444CEJW-T1_GE3 datasheet, SQA444CEJW-T1_GE3 pinout, SQA444CEJW-T1_GE3 application, or SQA444CEJW-T1_GE3 equivalent, this page delivers verified electrical parameters, wettable flank terminal layout, AEC-Q101 qualification status, thermal resistance data (R_thJC = 11 °C/W), and real-world substitution guidance for automotive power management designs.

Technical Context

This device implements a TrenchFET® silicon process optimized for low R_DS(on) and fast switching in compact leadless packages. It features fully characterized dynamic parameters including Q_g = 6–9 nC, C_iss = 378–530 pF, and t_d(on)/t_r/t_d(off)/t_f = 8–12 ns / 3–6 ns / 13–20 ns / 3–6 ns under standard gate drive conditions.

Designed for automotive power stages, it supports 100 % R_g and UIS testing per AEC-Q101, includes body diode with V_SD = 0.84–1.2 V at I_F = 4.5 A and t_rr = 16–32 ns, and operates across -55 °C to +175 °C with guaranteed V_GS(th) = 1.5–2.5 V and V_DS = 60 V breakdown rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 48 V automotive systems and 36 V nominal battery rails.
R_DS(on) @ V_GS = 10 V	0.0390 Ω - enables <1.6 W conduction loss at 9 A, critical for thermally constrained modules.
R_DS(on) @ V_GS = 4.5 V	0.0526 Ω - ensures robust turn-on with 5 V logic-level gate drivers in low-voltage control domains.
I_D (continuous, T_C = 25 °C)	9 A - supports high-current load switching without external heatsinking on FR4 PCBs.
T_J max	+175 °C - meets under-hood automotive thermal requirements and enables extended lifetime at elevated ambient.
R_thJC	11 °C/W - allows direct thermal path to copper pour or metal-core PCB for efficient heat extraction.
Q_g	6–9 nC - balances switching speed and gate driver loading for 100–500 kHz DC-DC operation.

Pinout & Package

PowerPAK® SC-70W-6L is a 2.05 mm × 2.05 mm × 0.5 mm leadless surface-mount package with wettable flank terminals for automated optical solder-joint inspection. Its exposed drain paddle provides low-inductance, low-thermal-resistance mounting to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain terminals tied to internal die paddle - reduce current density and improve thermal spreading.
3	Gate (G)	Single gate input with R_g = 0.225–0.675 Ω - enables stable gate drive without external series resistor in most cases.
6, 7	Source (S)	Two source terminals provide low-impedance return path and minimize source inductance in high-di/dt switching.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use with HTOL, TC, HTRB, and UHAST testing - eliminates requalification effort for Tier 1 designs.
Wettable flank terminals	Side-plated leads enable AOI-compatible solder joint inspection - improves manufacturing yield and field reliability.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - reduces risk of early-life failure.
TrenchFET® technology	Optimized cell pitch and trench depth deliver best-in-class R_DS(on) × Q_g figure-of-merit for 60 V class - improves efficiency in space-constrained converters.

Applications

Automotive Body Control Module (BCM)	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-side switch for LED headlamp dimming and adaptive lighting sequencing in BCMs. IC Role / Device Role / Timing Role: Power switch controlling 1–5 A LED strings with PWM duty cycle modulation up to 20 kHz. Use Value: Low R_DS(on) minimizes thermal rise in sealed enclosures; +175 °C rating ensures operation near engine bay electronics.	Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid energy recovery. IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 250 kHz with 4.5 V gate drive from controller IC. Use Value: 0.0526 Ω R_DS(on) at 4.5 V enables >95 % efficiency at 15 A output; wettable flanks support IPC-A-610 Class 3 compliance.
Electric Power Steering (EPS) Motor Driver	Automotive HVAC Blower Control
Use Scenario: Half-bridge high-side switch in three-phase EPS motor gate driver stage. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with integrated body diode for freewheeling during PWM dead-time. Use Value: t_rr = 16–32 ns and Q_rr = 8.4–17 nC limit voltage overshoot and EMI during commutation; AEC-Q101 ensures functional safety alignment.	Use Scenario: PWM-controlled blower motor driver in climate control systems requiring variable-speed fan operation. IC Role / Device Role / Timing Role: High-side switch delivering 3–8 A to brushed DC blower motors with soft-start and overcurrent protection. Use Value: 12.5 A single-pulse avalanche rating (IAS) withstands motor stall transients; R_thJC = 11 °C/W enables direct thermal coupling to chassis ground plane.

Automotive Body Control Module (BCM)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-side switch for LED headlamp dimming and adaptive lighting sequencing in BCMs.

IC Role / Device Role / Timing Role: Power switch controlling 1–5 A LED strings with PWM duty cycle modulation up to 20 kHz.

Use Value: Low R_DS(on) minimizes thermal rise in sealed enclosures; +175 °C rating ensures operation near engine bay electronics.

Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid energy recovery.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating at 250 kHz with 4.5 V gate drive from controller IC.

Use Value: 0.0526 Ω R_DS(on) at 4.5 V enables >95 % efficiency at 15 A output; wettable flanks support IPC-A-610 Class 3 compliance.

Electric Power Steering (EPS) Motor Driver

Automotive HVAC Blower Control

Use Scenario: Half-bridge high-side switch in three-phase EPS motor gate driver stage.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with integrated body diode for freewheeling during PWM dead-time.

Use Value: t_rr = 16–32 ns and Q_rr = 8.4–17 nC limit voltage overshoot and EMI during commutation; AEC-Q101 ensures functional safety alignment.

Use Scenario: PWM-controlled blower motor driver in climate control systems requiring variable-speed fan operation.

IC Role / Device Role / Timing Role: High-side switch delivering 3–8 A to brushed DC blower motors with soft-start and overcurrent protection.

Use Value: 12.5 A single-pulse avalanche rating (IAS) withstands motor stall transients; R_thJC = 11 °C/W enables direct thermal coupling to chassis ground plane.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC028N06NS3 G	R_DS(on) = 0.028 Ω @ 10 V, but only rated to +150 °C; no wettable flanks; PQFN 3.3 × 3.3 mm package.	Better conduction loss at high current, but limited thermal margin for under-hood placement; requires X-ray for solder inspection.	Select when peak efficiency > thermal ruggedness; verify PCB pad layout compatibility due to larger footprint.
ON Semiconductor NTMFS4C06NT1G	R_DS(on) = 0.042 Ω @ 10 V; AEC-Q101 qualified; PowerTrench® with wettable flanks; same 2.05 × 2.05 mm outline.	Nearly identical form-factor and thermal specs, but higher R_DS(on) increases conduction loss by ~8 % at 9 A.	Drop-in alternative if SQA444CEJW-T1_GE3 is unavailable; no layout change required; confirm gate charge (Q_g = 10.5 nC) impact on driver sizing.

Compared with BSC028N06NS3 G and NTMFS4C06NT1G, the SQA444CEJW-T1_GE3 offers superior high-temperature capability (+175 °C), lowest gate resistance (0.225–0.675 Ω), and tightest R_DS(on) tolerance at 4.5 V - making it optimal for thermally aggressive, space-constrained automotive power stages where reliability trumps marginal R_DS(on) reduction.

Availability

SQA444CEJW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V DC-DC converters, electric power steering systems, and HVAC blower controls requiring stable component supply across multi-year production cycles.

Supply support for SQA444CEJW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQA444CEJW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SC-70W family, engineered specifically for space-constrained, high-temperature power switching in next-generation vehicle electrification systems.

FAQ

What is the maximum continuous drain current rating for SQA444CEJW-T1_GE3 at 125 °C case temperature?

The SQA444CEJW-T1_GE3 supports 7.7 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SC-70W-6L package and ensures safe operation within its 11 °C/W junction-to-case thermal resistance. Engineers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C under full load.

Is SQA444CEJW-T1_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, the SQA444CEJW-T1_GE3 is AEC-Q101 qualified. Per Vishay documentation, this includes high-temperature operating life (HTOL), temperature cycling (TC), high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS) testing - all performed on 100 % of production lots. The device also undergoes 100 % R_g screening to ensure gate drive consistency in automotive applications.

Does SQA444CEJW-T1_GE3 have wettable flank terminals, and why does that matter for manufacturing?

Yes, the SQA444CEJW-T1_GE3 features wettable flank terminals on its PowerPAK SC-70W-6L package. These side-plated leads allow automated optical inspection (AOI) of solder joints - a critical requirement for IPC-A-610 Class 3 compliance in automotive electronics. This eliminates reliance on X-ray inspection, reduces test cost, and improves first-pass yield in high-volume SMT lines.

What is the typical total gate charge (Q_g) of SQA444CEJW-T1_GE3, and how does it affect gate driver selection?

The SQA444CEJW-T1_GE3 has a typical total gate charge (Q_g) of 6–9 nC at V_GS = 10 V, measured with V_DS = 30 V and I_D = 5 A. This moderate Q_g enables use of low-power gate drivers (e.g., TI UCC27517 or ON Semi NCP3420) without excessive power dissipation, while supporting switching frequencies up to 500 kHz in DC-DC converters with minimal Miller-induced shoot-through risk.

Can SQA444CEJW-T1_GE3 be used as a synchronous rectifier in a 48 V-to-12 V converter, and what body diode specs support that?

Yes, the SQA444CEJW-T1_GE3 is suitable as a synchronous rectifier. Its body diode exhibits V_SD = 0.84–1.2 V at I_F = 4.5 A and fast reverse recovery with t_rr = 16–32 ns and Q_rr = 8.4–17 nC - minimizing conduction loss and voltage spikes during freewheeling. Combined with R_DS(on) = 0.0526 Ω at 4.5 V, it delivers high efficiency in 250–300 kHz buck converters without requiring external Schottky catch diodes.

SQA444CEJW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 39mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 13.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK®SC-70W-6

SQA444CEJW-T1_GE3 FAQ

1.How can I place an order for SQA444CEJW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQA444CEJW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQA444CEJW-T1_GE3 reliable?

The price and inventory of SQA444CEJW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA444CEJW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQA444CEJW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA444CEJW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQA444CEJW-T1_GE3?

SQA444CEJW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQA444CEJW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQA444CEJW-T1_GE3?

For technical support, including SQA444CEJW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA444CEJW-T1_GE3 requirements.

6.How does Aetrix verify that SQA444CEJW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQA444CEJW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA444CEJW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQA444CEJW-T1_GE3?

All SQA444CEJW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA444CEJW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQA444CEJW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQA444CEJW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …