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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQA446CEJW-T1_GE3

Name: SQA446CEJW-T1_GE3
Brand: Vishay Siliconix
SKU: SQA446CEJW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQA446CEJW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-PowerVDFN

Datasheet:: SQA446CEJW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 20 V (D-S)

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Product details

Overview

SQA446CEJW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 20 V V_DS, 9 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features wettable flank terminals in PowerPAK® SC-70W-6L package and is AEC-Q101 qualified for under-hood power switching in DC-DC converters and motor drivers.

For engineers reviewing the SQA446CEJW-T1_GE3 datasheet, SQA446CEJW-T1_GE3 pinout, SQA446CEJW-T1_GE3 application, or SQA446CEJW-T1_GE3 equivalent, key selection criteria include R_DS(on) at 2.5 V and 4.5 V gate drive, avalanche energy rating (33.8 mJ), thermal resistance (R_thJC = 11 °C/W), and wettable flank solderability for automated optical inspection.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) at logic-level gate drive (2.5 V–4.5 V), enabling direct interface with microcontroller GPIOs without level-shifting. Its 100 % R_g and UIS tested construction ensures robustness in inductive load switching.

The PowerPAK SC-70W-6L package integrates dual drain pads (pins 1,2,4,5) and source-sink symmetry (pins 3,6), supporting high-current density routing and thermal dissipation via PCB copper. Junction-to-case thermal path is optimized for surface-mount thermal vias under the drain paddle.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12 V automotive systems with transient margin
R_DS(on) @ V_GS = 4.5 V	0.0175 Ω - Enables ≤ 0.36 W conduction loss at 4.5 A, critical for thermally constrained modules
R_DS(on) @ V_GS = 2.5 V	0.0240 Ω - Supports low-voltage MCU control in start-stop battery management circuits
I_D (continuous)	9 A @ T_C = 25 °C - Sustained current capability with 13.6 W power dissipation on FR4 PCB
E_AS	33.8 mJ - Avalanche energy rating validated per AEC-Q101, enabling reliable inductive turn-off
T_J max	+175 °C - Qualified for under-hood environments including engine control units and HVAC actuators
R_thJC	11 °C/W - Low junction-to-case resistance enables efficient heat transfer to heatsink or thermal pad

Pinout & Package

PowerPAK® SC-70W-6L is a leadless, wettable flank package with 0.5 mm pitch, 2.05 mm × 2.05 mm footprint, and exposed drain paddle for thermal and electrical performance. Terminals are tin-plated for compatibility with standard reflow profiles (peak 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain connections reduce current density and enhance thermal spreading across PCB copper
3	Gate (G)	Single gate input with 1.0 Ω typical gate resistance-supports fast switching with minimal external gate resistor
6	Source (S)	Source terminal tied to internal substrate; used for Kelvin sensing or low-inductance return path

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including engine control, transmission solenoids, and ADAS power stages
Wettable flank terminals	Enables automated optical inspection (AOI) of solder fillets-critical for zero-defect manufacturing in Tier-1 supply chains
100 % R_g and UIS testing	Every unit screened for gate resistance consistency and unclamped inductive switching robustness
TrenchFET® architecture	Delivers 24 % lower R_DS(on) at 2.5 V vs. planar MOSFETs-reducing gate drive power in always-on modules
Body diode t_rr = 11 ns	Fast reverse recovery minimizes switching losses in synchronous rectification and H-bridge freewheeling

Applications

Automotive Body Control Module	12 V DC-DC Converter Primary Switch
Use Scenario: Driving high-side loads such as door locks, mirror heaters, and interior lighting in BCMs with 12 V battery input. IC Role / Device Role / Timing Role: High-side N-channel MOSFET configured with integrated charge pump or external driver for load switching. Use Value: 175 °C rating ensures operation during prolonged engine-off cabin heating; wettable flanks support AOI in high-volume BCM assembly.	Use Scenario: Primary-side switch in buck or buck-boost converters powering infotainment head units and telematics modules. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 300–500 kHz with low Q_g (6.5 nC typ.) and C_iss (649 pF typ.). Use Value: 0.0175 Ω R_DS(on) at 4.5 V reduces conduction loss by >30 % vs. legacy 30 V MOSFETs-improving efficiency at light load.
Engine Start-Stop Solenoid Driver	Electric Power Steering (EPS) Motor Phase Switch
Use Scenario: Controlling starter solenoid engagement during automatic engine restart in 12 V mild-hybrid systems. IC Role / Device Role / Timing Role: Low-threshold (V_GS(th) = 0.6–1.3 V) N-channel switch driven directly from MCU GPIO with minimal external components. Use Value: R_DS(on) stability up to 175 °C prevents thermal runaway during repeated cranking cycles; E_AS = 33.8 mJ handles solenoid inductive kickback.	Use Scenario: Half-bridge phase leg in 12 V EPS motor drivers requiring high reliability and low thermal impedance. IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch paired with complementary high-side driver in three-phase inverter stage. Use Value: R_thJC = 11 °C/W enables direct thermal coupling to aluminum heatsink; wettable flanks ensure solder joint integrity under vibration and thermal cycling.

Automotive Body Control Module

12 V DC-DC Converter Primary Switch

Use Scenario: Driving high-side loads such as door locks, mirror heaters, and interior lighting in BCMs with 12 V battery input.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET configured with integrated charge pump or external driver for load switching.

Use Value: 175 °C rating ensures operation during prolonged engine-off cabin heating; wettable flanks support AOI in high-volume BCM assembly.

Use Scenario: Primary-side switch in buck or buck-boost converters powering infotainment head units and telematics modules.

IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 300–500 kHz with low Q_g (6.5 nC typ.) and C_iss (649 pF typ.).

Use Value: 0.0175 Ω R_DS(on) at 4.5 V reduces conduction loss by >30 % vs. legacy 30 V MOSFETs-improving efficiency at light load.

Engine Start-Stop Solenoid Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Controlling starter solenoid engagement during automatic engine restart in 12 V mild-hybrid systems.

IC Role / Device Role / Timing Role: Low-threshold (V_GS(th) = 0.6–1.3 V) N-channel switch driven directly from MCU GPIO with minimal external components.

Use Value: R_DS(on) stability up to 175 °C prevents thermal runaway during repeated cranking cycles; E_AS = 33.8 mJ handles solenoid inductive kickback.

Use Scenario: Half-bridge phase leg in 12 V EPS motor drivers requiring high reliability and low thermal impedance.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch paired with complementary high-side driver in three-phase inverter stage.

Use Value: R_thJC = 11 °C/W enables direct thermal coupling to aluminum heatsink; wettable flanks ensure solder joint integrity under vibration and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, 0.0014 Ω R_DS(on) @ 10 V, PG-TSDSON-8 package, no wettable flanks	Higher voltage rating suits 24 V commercial vehicles; lacks AEC-Q101 documentation for passenger car use	Select when higher V_DS margin is required and AOI is not mandated; verify qualification status per vehicle platform.
ON Semiconductor NTMFS4C06NT1G	30 V V_DS, 0.0058 Ω R_DS(on) @ 10 V, PowerTrench® with wettable flanks, AEC-Q101 qualified	Higher R_DS(on) at 2.5 V (0.0085 Ω) limits low-voltage MCU drive; larger 3.3 mm × 3.3 mm footprint	Prefer for designs needing higher V_DS headroom and same-package manufacturability-requires layout revision due to size.

Compared with BSC014N04LS6 and NTMFS4C06NT1G, the SQA446CEJW-T1_GE3 offers optimal balance of 20 V rating, 2.5 V logic compatibility, wettable flank AOI support, and compact 2.05 mm × 2.05 mm footprint-making it ideal for space-constrained, high-reliability 12 V automotive modules where thermal and inspection requirements are stringent.

Availability

SQA446CEJW-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and engine start-stop solenoid drivers requiring stable component supply, AEC-Q101 compliance, and wettable flank manufacturability.

Supply support for SQA446CEJW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQA446CEJW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® portfolio, designed specifically for high-density, thermally demanding 12 V power switching in engine compartments and ADAS subsystems.

FAQ

What is the maximum continuous drain current for SQA446CEJW-T1_GE3 at 125 °C case temperature?

The SQA446CEJW-T1_GE3 supports 9 A continuous drain current at T_C = 125 °C, matching its rating at 25 °C due to derating compensation in the SOA curve. This reflects its robust thermal design with R_thJC = 11 °C/W and 175 °C maximum junction temperature-enabling sustained operation in hot under-hood locations without current reduction.

Does SQA446CEJW-T1_GE3 support direct drive from a 2.5 V GPIO without external level shifting?

Yes, the SQA446CEJW-T1_GE3 is specified for R_DS(on) = 0.0240 Ω at V_GS = 2.5 V and I_D = 3 A, confirming reliable enhancement-mode operation at logic-level drive. Its V_GS(th) range (0.6–1.3 V) ensures turn-on margin across process and temperature, making SQA446CEJW-T1_GE3 suitable for direct MCU interface in battery management and sensor interface modules.

Is SQA446CEJW-T1_GE3 qualified for automotive applications per AEC-Q101?

Yes, the SQA446CEJW-T1_GE3 is explicitly AEC-Q101 qualified, as documented in Vishay's official datasheet (S21-0817-Rev. A). This qualification covers stress tests including HTGB, HTRB, UHAST, temperature cycling, and mechanical shock-validating SQA446CEJW-T1_GE3 for safety-critical automotive functions such as engine control, braking, and steering assist systems.

What is the significance of wettable flank terminals on SQA446CEJW-T1_GE3?

Wettable flank terminals on the SQA446CEJW-T1_GE3 enable full solder fillet visibility along the vertical sidewall of the PowerPAK SC-70W-6L package, allowing automated optical inspection (AOI) to detect voids, insufficient solder, or bridging. This feature is essential for zero-defect manufacturing in automotive electronics, and is explicitly supported in Vishay's solder profile documentation (doc# 73257).

How does the avalanche energy rating of SQA446CEJW-T1_GE3 impact circuit design?

The SQA446CEJW-T1_GE3 has a single-pulse avalanche energy rating (E_AS) of 33.8 mJ, verified per AEC-Q101 test conditions. This allows designers to eliminate external snubbers in inductive load switching (e.g., solenoids, relays), simplifying layout and improving system reliability-provided the inductive energy stored (½·L·I²) remains within this limit during worst-case turn-off events.

SQA446CEJW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 910 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 13.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK®SC-70W-6

SQA446CEJW-T1_GE3 FAQ

1.How can I place an order for SQA446CEJW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQA446CEJW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQA446CEJW-T1_GE3 reliable?

The price and inventory of SQA446CEJW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA446CEJW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQA446CEJW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA446CEJW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQA446CEJW-T1_GE3?

SQA446CEJW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQA446CEJW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQA446CEJW-T1_GE3?

For technical support, including SQA446CEJW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA446CEJW-T1_GE3 requirements.

6.How does Aetrix verify that SQA446CEJW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQA446CEJW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA446CEJW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQA446CEJW-T1_GE3?

All SQA446CEJW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA446CEJW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQA446CEJW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQA446CEJW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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