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Vishay Siliconix SQA470EJ-T1_GE3
- Part No.:
- SQA470EJ-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SQA470EJ-T1_GE3.pdf
- Description:
- MOSFET N-CH 30V 2.25A PPAK SC70
- Quantity:
- Payment:
- Shipping:
Inventory:2,988
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Product details
Overview
SQA470EJ-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET with 30 V VDS, 0.065 Ω RDS(on) at VGS = 4.5 V, and 2.25 A continuous drain current at TC = 25 °C, housed in a PowerPAK SC-70 package for space-constrained engine control and body electronics.
For engineers reviewing the SQA470EJ-T1_GE3 datasheet, SQA470EJ-T1_GE3 pinout, SQA470EJ-T1_GE3 application, or SQA470EJ-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 11 °C/W), AEC-Q101 qualification status, gate charge (Qg = 4.6–6 nC), junction temperature range (–55 to +175 °C), and safe operating area limits critical for automotive power switching design.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) at logic-level gate drive (2.5 V and 4.5 V), enabling direct interface with microcontroller GPIOs in 12 V automotive systems. Its 100 % Rg and UIS testing ensures robustness against voltage transients and inductive switching stress.
The PowerPAK SC-70 package provides enhanced thermal performance over standard SOT-23 variants, with RthJA = 90 °C/W on 1"² FR4 PCB and RthJC = 11 °C/W - critical for high-reliability under-hood applications where ambient temperatures exceed 125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems including load dump conditions. |
| RDS(on) @ VGS = 4.5 V | 0.065 Ω - Low conduction loss enabling <150 mW I²R loss at 2.25 A, reducing thermal burden in compact modules. |
| Continuous ID @ TC = 25 °C | 2.25 A - Rated current for steady-state switching in low-power actuators, LED drivers, and sensor bias circuits. |
| Junction Temp Range | –55 to +175 °C - Supports operation in extreme under-hood environments without derating below –40 °C cold cranking or above 150 °C engine bay. |
| Qg | 4.6–6 nC - Enables fast turn-on with minimal gate driver power demand; suitable for PWM frequencies up to 500 kHz. |
| RthJC | 11 °C/W - Direct thermal path from die to PCB copper allows efficient heat extraction via drain pad, essential for sustained 2.25 A operation. |
| AEC-Q101 Qualified | Yes - Validated per automotive stress test requirements including HTRB, H3TRB, TC, AC/DC life test, and ESD (HBM ≥ 2 kV). |
Pinout & Package
PowerPAK SC-70 is a 6-lead leadless surface-mount package with exposed drain paddle on bottom side. Dimensions: 2.05 mm × 2.05 mm × 0.75 mm (L × W × H). Pin 1 is marked by chamfered corner; top-side silkscreen identifies pin 1 and device marking "QCXXXX".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main high-current output terminal; electrically and thermally connected to exposed bottom paddle for low-inductance, low-RthJC mounting. |
| 2 (D) | Drain | Second drain connection - paralleled internally with Pin 1 to reduce package inductance and improve current sharing. |
| 3 (G) | Gate | Control input; requires ≤ ±12 V drive; low Ciss (312–440 pF) minimizes Miller effect during switching. |
| 4 (D) | Drain | Third drain terminal - reinforces thermal and electrical connection to PCB copper pour for high-reliability power routing. |
| 5 (D) | Drain | Fourth drain connection - part of multi-drain configuration enhancing current capacity and thermal dissipation. |
| 6 (S) | Source | Reference node for gate drive and current sensing; tied to ground plane; enables Kelvin source layout for accurate RDS(on) monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.065 Ω RDS(on) at 4.5 V gate drive - eliminates need for gate boosters in 3.3 V/5 V MCU-controlled loads. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity testing, and surge immunity - reduces qualification effort for Tier 1 suppliers. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching survival - ensures field reliability in solenoid and relay drive. |
| PowerPAK SC-70 package | 0.75 mm profile and 2.05 mm footprint enable placement in tight spaces (e.g., ECU edge zones) while maintaining 13.6 W PD at TC = 25 °C. |
| 175 °C maximum TJ | Enables operation in proximity to hot components (e.g., near exhaust manifolds or power converters) without thermal shutdown. |
Applications
| Engine Control Module (ECM) Valve Driver | Automotive LED Headlamp Dimming |
|---|---|
Use Scenario: Driving 12 V fuel injector or idle air control valve in engine management system with PWM duty cycles up to 95 %. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; operates in linear and saturated modes with fast turn-off (<32 ns td(off)) to prevent valve sticking. Use Value: 0.095 Ω RDS(on) at 2.5 V gate drive ensures full saturation from MCU GPIO, minimizing power loss and self-heating during extended idle periods. |
Use Scenario: PWM dimming of high-brightness LED arrays in adaptive front-lighting systems (AFS), requiring precise current regulation and thermal stability. IC Role / Device Role / Timing Role: High-efficiency synchronous buck switch; handles 2.25 A peak LED current with <10 ns rise/fall times to suppress EMI in sensitive camera-adjacent zones. Use Value: RthJC = 11 °C/W enables direct thermal coupling to aluminum-backed PCB, sustaining 175 °C junction temperature during 10 s emergency flash mode. |
| Body Control Module (BCM) Window Lift Motor | Automotive HVAC Blower Control |
Use Scenario: Bidirectional motor control for power window lift/lower using H-bridge topology with discrete high- and low-side switches. IC Role / Device Role / Timing Role: Low-side N-channel switch in half-bridge configuration; reverse diode (VSD = 0.75–1.2 V) recirculates inductive energy during motor commutation. Use Value: 24 A pulsed source current (ISM) and 9 A avalanche rating (IAS) withstand motor stall and back-EMF spikes without external snubbers. |
Use Scenario: Variable-speed blower fan control in climate systems, operating continuously across –40 to +85 °C ambient with 100 % duty cycle capability. IC Role / Device Role / Timing Role: Main power switch in DC-DC pre-regulator stage; modulated at 25 kHz to avoid audible noise while maintaining efficiency. Use Value: 0.038 Ω typical RDS(on) at 4.5 V reduces conduction loss to <200 mW, eliminating need for heatsink in sealed HVAC control housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFG-7 | RDS(on) = 0.025 Ω @ 4.5 V, but rated only to 150 °C TJ; no AEC-Q101 documentation provided in public datasheet. | Not qualified for under-hood use beyond 150 °C; unsuitable for ECM or transmission control where 175 °C operation is mandated. | Select only for cabin-located modules (e.g., infotainment power rails) where temperature and qualification requirements are relaxed. |
| SI2302DS-T1-GE3 | RDS(on) = 0.085 Ω @ 4.5 V; rated to 150 °C TJ; not AEC-Q101 qualified; RthJC = 120 °C/W (SOT-23). | Higher thermal resistance and lower temperature rating limit usable current to ~1.2 A in same PCB layout; lacks automotive stress validation. | Acceptable for non-safety-critical interior lighting or USB power switches where cost is primary and qualification is optional. |
Compared with DMN3025LFG-7 and SI2302DS-T1-GE3, the SQA470EJ-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and 11 °C/W RthJC - making it the only option among the three capable of sustaining 2.25 A in engine compartment applications without derating or additional cooling.
Availability
SQA470EJ-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and lighting systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for ISO/TS 16949-compliant production.
Supply support for SQA470EJ-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQA470EJ-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SC-70 family, engineered specifically for space-constrained, high-temperature switching in engine management, chassis, and body control units.
FAQ
What is the maximum gate-source voltage rating for SQA470EJ-T1_GE3?
The SQA470EJ-T1_GE3 has a maximum gate-source voltage (VGS) rating of ±12 V. Exceeding this limit risks permanent gate oxide damage. This rating supports compatibility with standard 3.3 V and 5 V microcontroller outputs, as well as dedicated gate drivers delivering up to 10 V for faster switching. The SQA470EJ-T1_GE3 gate structure is designed to tolerate transient overshoot within this envelope when proper PCB layout practices (e.g., minimized loop inductance) are followed.
Is SQA470EJ-T1_GE3 suitable for 2.5 V logic-level drive applications?
Yes, the SQA470EJ-T1_GE3 is fully specified for 2.5 V gate drive, with RDS(on) = 0.095 Ω at VGS = 2.5 V and ID = 3 A. Its gate threshold voltage (VGS(th)) ranges from 0.45 V to 1.1 V, ensuring reliable turn-on even with marginally low drive levels. This makes the SQA470EJ-T1_GE3 appropriate for direct interfacing with low-voltage MCUs and ASICs in modern automotive domains without level-shifting circuitry.
Does SQA470EJ-T1_GE3 include integrated ESD protection?
The SQA470EJ-T1_GE3 incorporates on-die ESD protection structures validated to HBM ≥ 2 kV per AEC-Q101 requirements. While not explicitly labeled as "ESD-protected" in marketing terms, its qualification includes human-body model testing across all pins, confirming robustness against common handling and assembly electrostatic events. No external TVS diode is required solely for ESD compliance in controlled manufacturing environments.
What is the safe operating area (SOA) limitation for SQA470EJ-T1_GE3 at DC conditions?
At DC operation and TC = 25 °C, the SQA470EJ-T1_GE3 SOA is limited by RDS(on) and maximum power dissipation (PD = 13.6 W), corresponding to ~3.6 A at 3.7 V VDS. The published SOA curve confirms DC capability up to 2.25 A at 10 V VDS - matching its rated continuous drain current. Derating is required above 25 °C case temperature per the RthJA = 90 °C/W thermal metric.
Can SQA470EJ-T1_GE3 be reworked using hot-air tools?
Yes, SQA470EJ-T1_GE3 can be reworked using calibrated hot-air stations with profiled ramp-soak-reflow cycles compliant with JEDEC J-STD-020. Manual soldering with an iron is not recommended due to its leadless PowerPAK SC-70 construction and exposed copper paddle. Rework must maintain peak temperature ≤260 °C for ≤30 seconds and avoid mechanical stress on the package edges to preserve solder joint integrity and thermal interface to the PCB.
SQA470EJ-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 13.6W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6 Single
SQA470EJ-T1_GE3 FAQ
1.How can I place an order for SQA470EJ-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQA470EJ-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQA470EJ-T1_GE3 reliable?
The price and inventory of SQA470EJ-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQA470EJ-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQA470EJ-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQA470EJ-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQA470EJ-T1_GE3?
SQA470EJ-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQA470EJ-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQA470EJ-T1_GE3?
For technical support, including SQA470EJ-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQA470EJ-T1_GE3 requirements.
6.How does Aetrix verify that SQA470EJ-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQA470EJ-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQA470EJ-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQA470EJ-T1_GE3?
All SQA470EJ-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQA470EJ-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQA470EJ-T1_GE3 part is unused and in its original packaging.
Return procedure for SQA470EJ-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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