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Vishay Siliconix SQD100N02_3M5L4GE3

Name: SQD100N02_3M5L4GE3
Brand: Vishay Siliconix
SKU: SQD100N02_3M5L4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD100N02_3M5L4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD100N02_3M5L4GE3.pdf

Description:: MOSFET N-CH 20V 100A TO252AA

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Product details

Overview

SQD100N02_3M5L4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 20 V V_DS, 3.5 mΩ R_DS(on) at V_GS = 10 V, and 100 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is housed in a TO-252 (DPAK) package with drain-connected tab, targeting high-current DC motor control and battery protection circuits in automotive body electronics.

For engineers reviewing the SQD100N02_3M5L4GE3 datasheet, SQD100N02_3M5L4GE3 pinout, SQD100N02_3M5L4GE3 application, or SQD100N02_3M5L4GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on) at 4.5 V gate drive, 100 % R_g and UIS tested reliability, and thermal performance validated under 1"² FR4 PCB mounting conditions.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust operation with standard logic-level drivers, while the 70–110 nC total gate charge supports efficient PWM control at frequencies up to several hundred kHz.

The device features a built-in source-drain diode with 0.86–1.2 V forward voltage at 50 A, rated for 300 A pulsed source current and 45 A single-pulse avalanche current. Thermal resistance of 1.8 °C/W (junction-to-case) and 50 °C/W (junction-to-ambient on 1"² PCB) enables high-power density designs without forced cooling in many under-hood applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage compatible with 12 V nominal automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	3.5 mΩ - Enables ≤3.5 W conduction loss at 100 A, critical for high-efficiency power distribution and motor drive stages.
R_DS(on) @ V_GS = 4.5 V	4.5 mΩ - Ensures reliable turn-on with 5 V microcontroller GPIO or automotive CAN/LIN transceiver I/O without level-shifting.
I_D (continuous, T_C = 25 °C)	100 A - Supports high-current loads such as HVAC blowers, seat motors, and solenoid drivers in compact TO-252 footprint.
T_J operating range	−55 to +175 °C - Meets under-hood ambient requirements per AEC-Q101, enabling placement near engines or powertrain ECUs.
Q_g (total gate charge)	70–110 nC - Determines driver strength requirement; compatible with common gate drivers like TC4427 or UCC27531 for <500 kHz switching.
E_AS	101 mJ - Specifies single-pulse avalanche energy handling, supporting inductive load switching without external snubbers.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected metal tab for thermal and electrical connection to PCB copper pour. Dimensions per Vishay document 64424: 6.09 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires <3.5 Ω series resistance to damp ringing due to 1.1–3.5 Ω intrinsic gate resistance.
D (Drain)	Main power output / high-side switch node	Internally connected to exposed metal tab; must be soldered to ≥1"² copper area for thermal management and current return path.
S (Source)	Power return / reference node	Provides low-impedance return path for load current; used for current sensing when placed in low-side configuration.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD, enabling deployment in safety-critical body control modules.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness-reducing field failure risk in motor commutation.
TrenchFET® technology	Delivers lowest R_DS(on) × Q_g figure-of-merit in TO-252 package, improving efficiency in 100–500 kHz DC/DC and motor phase control.
175 °C maximum junction temperature	Enables operation in high-ambient zones (e.g., near exhaust manifolds or power inverters) without derating below 65 A at 125 °C case temperature.
Drain-connected tab	Reduces thermal impedance to PCB by 1.8 °C/W (R_thJC), allowing >80 W power dissipation with minimal heatsinking in space-constrained modules.

Applications

Automotive Body Control Module (BCM)	12 V Battery Protection Circuit
Use Scenario: Driving high-current solenoids for door locks, trunk latches, and fuel flap actuators in modern BCMs. IC Role / Device Role / Timing Role: Low-side switch controlling 30–80 A inductive loads with PWM dimming or timed actuation. Use Value: 4.5 mΩ R_DS(on) at 4.5 V gate drive ensures full turn-on from MCU GPIO, eliminating need for external level shifters or dedicated drivers.	Use Scenario: Reverse polarity and overcurrent protection between starter battery and auxiliary systems (e.g., ADAS cameras, infotainment). IC Role / Device Role / Timing Role: High-side ideal diode replacement with fast turn-off (<60 ns fall time) to prevent backfeed during fault conditions. Use Value: 101 mJ E_AS withstands inductive kickback from relay coils and fuse blow events without avalanche failure.
Electric Power Steering (EPS) Motor Phase Switch	Engine Cooling Fan Driver
Use Scenario: Half-bridge leg in 12 V EPS motor inverter, switching up to 50 A peak phase current at 20 kHz PWM. IC Role / Device Role / Timing Role: Synchronous rectifier in active freewheeling mode, leveraging low Q_gd/Q_gs ratio for reduced shoot-through risk. Use Value: 11 nC Q_gd minimizes Miller plateau duration, enabling clean 50 ns–100 ns transition times even with 1 Ω gate resistor.	Use Scenario: Direct-drive interface between engine control unit (ECU) and brushless DC cooling fan drawing up to 90 A stall current. IC Role / Device Role / Timing Role: High-current, thermally robust low-side switch with integrated diode recovery for PWM-controlled speed regulation. Use Value: 0.86 V V_SD at 50 A reduces reverse conduction loss during freewheeling, improving system efficiency by ~1.2 W vs. discrete Schottky solutions.

Automotive Body Control Module (BCM)

12 V Battery Protection Circuit

Use Scenario: Driving high-current solenoids for door locks, trunk latches, and fuel flap actuators in modern BCMs.

IC Role / Device Role / Timing Role: Low-side switch controlling 30–80 A inductive loads with PWM dimming or timed actuation.

Use Value: 4.5 mΩ R_DS(on) at 4.5 V gate drive ensures full turn-on from MCU GPIO, eliminating need for external level shifters or dedicated drivers.

Use Scenario: Reverse polarity and overcurrent protection between starter battery and auxiliary systems (e.g., ADAS cameras, infotainment).

IC Role / Device Role / Timing Role: High-side ideal diode replacement with fast turn-off (<60 ns fall time) to prevent backfeed during fault conditions.

Use Value: 101 mJ E_AS withstands inductive kickback from relay coils and fuse blow events without avalanche failure.

Electric Power Steering (EPS) Motor Phase Switch

Engine Cooling Fan Driver

Use Scenario: Half-bridge leg in 12 V EPS motor inverter, switching up to 50 A peak phase current at 20 kHz PWM.

IC Role / Device Role / Timing Role: Synchronous rectifier in active freewheeling mode, leveraging low Q_gd/Q_gs ratio for reduced shoot-through risk.

Use Value: 11 nC Q_gd minimizes Miller plateau duration, enabling clean 50 ns–100 ns transition times even with 1 Ω gate resistor.

Use Scenario: Direct-drive interface between engine control unit (ECU) and brushless DC cooling fan drawing up to 90 A stall current.

IC Role / Device Role / Timing Role: High-current, thermally robust low-side switch with integrated diode recovery for PWM-controlled speed regulation.

Use Value: 0.86 V V_SD at 50 A reduces reverse conduction loss during freewheeling, improving system efficiency by ~1.2 W vs. discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF6AG	40 V V_DS, 2.2 mΩ R_DS(on) @ 10 V, PowerFLAT 5x6 package, no AEC-Q101 documentation publicly available.	Higher voltage rating suits 24 V commercial vehicles; smaller footprint but lower thermal mass limits sustained 100 A operation.	Select when 40 V headroom is required and PCB layout allows tighter thermal constraints; verify AEC compliance separately.
IRL1004PBF	40 V V_DS, 4.0 mΩ R_DS(on) @ 10 V, TO-220AB package, AEC-Q101 qualified per Infineon documentation.	Larger through-hole package increases board space and assembly cost; higher R_thJA (62 °C/W) demands heatsink for >40 A continuous use.	Choose for legacy TO-220 designs or where mechanical mounting stability outweighs thermal efficiency needs.

Compared with STL220N4LF6AG and IRL1004PBF, SQD100N02_3M5L4GE3 offers optimal balance of 20 V rating, ultra-low on-resistance in surface-mount form, AEC-Q101 validation, and proven thermal performance on standard FR4-making it preferred for new 12 V automotive power stages where size, efficiency, and qualification are jointly critical.

Availability

SQD100N02_3M5L4GE3 is available at Aetrix Electronics and suitable for automotive body control modules, battery protection circuits, electric power steering subsystems, and engine cooling fan drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQD100N02_3M5L4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and automotive qualification.

The SQD100N02_3M5L4GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle networks-including BCMs, lighting, and power distribution units.

FAQ

What is the maximum continuous drain current rating for SQD100N02_3M5L4GE3 at 125 °C case temperature?

The SQD100N02_3M5L4GE3 supports 65 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under real-world PCB mounting conditions and ensures safe operation within the 175 °C maximum junction temperature limit. Engineers must verify actual board-level thermal performance using the provided R_thJC = 1.8 °C/W and R_thJA = 50 °C/W values.

Is SQD100N02_3M5L4GE3 qualified to AEC-Q101, and what does that mean for automotive design?

Yes, SQD100N02_3M5L4GE3 is explicitly AEC-Q101 qualified per the Vishay datasheet revision S15-2646-Rev. A. This certification confirms successful completion of stress tests including high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (ESD) per human-body model (HBM) and machine model (MM). For automotive design, this means SQD100N02_3M5L4GE3 is approved for use in non-safety-critical but mission-relevant systems such as body electronics, lighting, and power distribution without additional qualification effort.

Can SQD100N02_3M5L4GE3 be driven directly by a 3.3 V microcontroller GPIO?

No-SQD100N02_3M5L4GE3 has a gate threshold voltage range of 1.5–2.5 V, but its R_DS(on) is only guaranteed at V_GS = 4.5 V and 10 V. At 3.3 V, the device enters partial enhancement, resulting in significantly higher on-resistance (>15 mΩ) and unacceptable conduction losses. A dedicated gate driver (e.g., TC4427) or level shifter is required to ensure full enhancement and maintain ≤4.5 mΩ R_DS(on). The datasheet does not characterize performance below 4.5 V.

What is the recommended PCB pad layout for thermal performance of SQD100N02_3M5L4GE3?

Vishay Application Note 826 specifies minimum recommended pads for TO-252: 0.243" × 0.420" (6.18 mm × 10.67 mm) for the drain tab, with ≥2 oz copper and full thermal via array (≥12 vias, 0.3 mm diameter, spaced ≤1 mm apart) connecting to inner-layer ground or power planes. This layout achieves the stated R_thJA = 50 °C/W. Smaller pads or insufficient copper will degrade thermal performance and require current derating beyond the datasheet curves.

Does SQD100N02_3M5L4GE3 include integrated ESD protection on the gate?

The SQD100N02_3M5L4GE3 datasheet specifies gate-source leakage current (I_GSS) of ±100 nA at ±20 V, but does not state integrated ESD protection circuitry. It is rated for human-body model (HBM) ESD per AEC-Q101, meaning the die structure itself withstands 2 kV HBM-however, external gate protection (e.g., 10 Ω series resistor + 12 V TVS) is strongly advised in production designs to prevent latch-up or oxide damage during handling or system transients.

SQD100N02_3M5L4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD100N02_3M5L4GE3 FAQ

1.How can I place an order for SQD100N02_3M5L4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD100N02_3M5L4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD100N02_3M5L4GE3 reliable?

The price and inventory of SQD100N02_3M5L4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD100N02_3M5L4GE3 is usually 5 days.

3.What payment methods are accepted for SQD100N02_3M5L4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD100N02_3M5L4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD100N02_3M5L4GE3?

SQD100N02_3M5L4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD100N02_3M5L4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD100N02_3M5L4GE3?

For technical support, including SQD100N02_3M5L4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD100N02_3M5L4GE3 requirements.

6.How does Aetrix verify that SQD100N02_3M5L4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD100N02_3M5L4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD100N02_3M5L4GE3 meets industry standards.

7.What is the process for return or replacement of SQD100N02_3M5L4GE3?

All SQD100N02_3M5L4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD100N02_3M5L4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD100N02_3M5L4GE3 part is unused and in its original packaging.

Return procedure for SQD100N02_3M5L4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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