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Vishay Siliconix SQD100N02-3M5L_GE3
- Part No.:
- SQD100N02-3M5L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD100N02-3M5L_GE3.pdf
- Description:
- MOSFET N-CH 20V 100A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:1,450
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Product details
Overview
SQD100N02-3M5L from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 100 A continuous drain current at TC = 25 °C, and 3.5 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified, designed for high-current DC-DC converter primary-side switching in engine control units.
For engineers reviewing the SQD100N02-3M5L datasheet, SQD100N02-3M5L pinout, SQD100N02-3M5L application, or SQD100N02-3M5L equivalent, key selection criteria include its 1.8 °C/W junction-to-case thermal resistance, 70 nC total gate charge, 100 % UIS tested ruggedness, and TO-252 package suitability for thermally demanding under-hood automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in 20 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V microcontrollers, while the 4300 pF input capacitance and 585 pF reverse transfer capacitance support stable PWM operation at frequencies up to 200 kHz.
The device integrates a co-packaged body diode with 0.86 V forward voltage at 50 A and supports synchronous rectification in buck converters. Its 101 mJ single-pulse avalanche energy rating and 100 % Rg testing ensure reliability in inductive load switching and load-dump transient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - Supports 12 V nominal automotive battery systems with margin for load dump transients. |
| RDS(on) @ 10 V | 3.5 mΩ - Enables <1 W conduction loss at 50 A, critical for high-efficiency 48 V/12 V DC-DC stages. |
| ID (Cont.) @ 25 °C | 100 A - Sustains peak motor driver or starter solenoid currents without derating on 1"² FR4 PCB. |
| Junction Temp Range | −55 to +175 °C - Qualified for under-hood ECU and transmission control module environments. |
| Qg (Total) | 70 nC - Balances switching speed and gate driver power requirement for 100 kHz PWM operation. |
| RthJC | 1.8 °C/W - Allows direct heatsinking via drain-tab mounting to reduce thermal bottleneck in compact modules. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics per JESD22-A108 and A112. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection. Dimensions per Vishay document 64424: 6.09 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives PWM signal; 2.3 Ω typical gate resistance limits ringing and simplifies RC snubber design. |
| D (Drain) | High-side power terminal | Internally connected to exposed copper tab; must be soldered to large copper pour for thermal management. |
| S (Source) | Power return/reference node | Serves as local ground reference for gate drive; requires low-inductance layout to avoid shoot-through. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure of merit (0.245 Ω·nC) for 20 V class, minimizing combined conduction and switching losses. |
| 100 % UIS tested | Each unit validated for unclamped inductive switching at 45 A and 101 mJ, ensuring robustness in relay/coil driving applications. |
| Drain-tab thermal path | 1.8 °C/W junction-to-case resistance enables >80 W power dissipation with minimal external heatsink in space-constrained modules. |
| AEC-Q101 qualification | Validated across temperature cycling, HTRB, HAST, and ESD (HBM 2 kV) per automotive reliability standards. |
| Low VGS(th) variation | Threshold voltage tightly distributed (1.5–2.5 V) with ±0.2 V max shift over −55 to +175 °C, enabling stable turn-on timing. |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-current 12 V supply switching for fuel injector drivers and ignition coils. IC Role / Device Role / Timing Role: Primary-side N-channel switch in high-side configuration, synchronized to MCU PWM output. Use Value: 3.5 mΩ RDS(on) reduces I²R loss by >30 % vs. legacy 5 mΩ devices, lowering thermal stress in sealed ECU housings. |
Use Scenario: Step-down conversion from 48 V mild-hybrid bus to 12 V auxiliary systems. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck topology operating at 150 kHz. Use Value: 70 nC Qg and 585 pF Crss enable clean zero-voltage switching transitions, improving efficiency above 95 % at 25 A load. |
| Transmission Control Module (TCM) | Electric Power Steering (EPS) Motor Driver |
Use Scenario: Solenoid valve actuation for hydraulic pressure regulation in automatic transmissions. IC Role / Device Role / Timing Role: Low-side switch controlling 100 A peak inductive loads with active freewheeling. Use Value: 101 mJ EAS rating withstands repeated inductive kickback without degradation, extending field life beyond 15 years. |
Use Scenario: Half-bridge leg in three-phase inverter supplying 30 A RMS to EPS brushless motor. IC Role / Device Role / Timing Role: High-current, high-reliability power switch with integrated body diode for regenerative braking commutation. Use Value: 0.86 V VSD at 50 A minimizes freewheeling loss during dead-time, reducing MOSFET temperature rise by 12 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF100N02L | RDS(on) = 3.2 mΩ @ 10 V, but only rated to +150 °C TJ and not AEC-Q101 qualified. | Lacks automotive qualification; suitable for industrial motor drives but not under-hood ECUs. | Select IRF100N02L only for non-automotive cost-sensitive designs where 25 °C thermal margin suffices. |
| STL100N02LF7 | Same 20 V/100 A rating and TO-252 package, but RDS(on) = 4.0 mΩ @ 10 V and Qg = 85 nC. | Higher switching loss due to elevated Qg; requires stronger gate driver in high-frequency (>100 kHz) applications. | Choose STL100N02LF7 when AEC-Q101 compliance is secondary and board-level footprint compatibility is mandatory. |
Compared with IRF100N02L and STL100N02LF7, the SQD100N02-3M5L provides superior thermal capability (+175 °C), lower gate charge, and full automotive qualification-making it the preferred choice for safety-critical, high-temperature automotive power switching where long-term reliability is non-negotiable.
Availability
SQD100N02-3M5L is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and electric power steering systems requiring stable component supply across extended automotive production lifecycles.
Supply support for SQD100N02-3M5L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD100N02-3M5L belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation vehicle electrification systems.
FAQ
What is the maximum continuous drain current rating for SQD100N02-3M5L at 125 °C case temperature?
The SQD100N02-3M5L supports 65 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-temperature operation, and must be verified against actual PCB layout and heatsinking in the target application.
Is SQD100N02-3M5L suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, the SQD100N02-3M5L is well-suited for synchronous rectification due to its low 3.5 mΩ RDS(on) at 10 V, 0.86 V body diode forward voltage at 50 A, and 70 nC total gate charge. Its 175 °C junction rating ensures stability in high-power density converters where thermal headroom is constrained.
Does SQD100N02-3M5L have a guaranteed gate threshold voltage range?
Yes, the SQD100N02-3M5L has a guaranteed VGS(th) range of 1.5 V to 2.5 V at ID = 250 μA, with typical variation of ±0.2 V over the full −55 to +175 °C junction temperature range. This tight distribution ensures predictable turn-on behavior across automotive ambient conditions.
What is the thermal resistance from junction to ambient for SQD100N02-3M5L on a standard PCB?
The junction-to-ambient thermal resistance (RthJA) for SQD100N02-3M5L is 50 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides. This value assumes no external heatsink; actual performance improves significantly when the drain tab is soldered to a dedicated thermal pad or metal-core substrate.
How is the avalanche ruggedness of SQD100N02-3M5L validated?
The SQD100N02-3M5L undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC standard JESD24-1, with a single-pulse avalanche energy rating of 101 mJ and peak current of 45 A. Each production unit is tested to ensure robustness in inductive load switching applications like solenoid and motor control.
SQD100N02-3M5L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5500 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD100N02-3M5L_GE3 FAQ
1.How can I place an order for SQD100N02-3M5L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD100N02-3M5L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD100N02-3M5L_GE3 reliable?
The price and inventory of SQD100N02-3M5L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD100N02-3M5L_GE3 is usually 5 days.
3.What payment methods are accepted for SQD100N02-3M5L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD100N02-3M5L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD100N02-3M5L_GE3?
SQD100N02-3M5L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD100N02-3M5L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD100N02-3M5L_GE3?
For technical support, including SQD100N02-3M5L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD100N02-3M5L_GE3 requirements.
6.How does Aetrix verify that SQD100N02-3M5L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD100N02-3M5L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD100N02-3M5L_GE3 meets industry standards.
7.What is the process for return or replacement of SQD100N02-3M5L_GE3?
All SQD100N02-3M5L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD100N02-3M5L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD100N02-3M5L_GE3 part is unused and in its original packaging.
Return procedure for SQD100N02-3M5L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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