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Vishay Siliconix SQD100N03-3M2L_GE3
- Part No.:
- SQD100N03-3M2L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD100N03-3M2L_GE3.pdf
- Description:
- MOSFET N-CH 30V 100A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,547
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Product details
Overview
SQD100N03-3M2L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 100 A continuous drain current at TC = 25 °C, and RDS(on) of 3.2 mΩ at VGS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab-designed for high-current DC-DC converters and motor control in engine management systems.
For engineers reviewing the SQD100N03-3M2L_GE3 datasheet, SQD100N03-3M2L_GE3 pinout, SQD100N03-3M2L_GE3 application, or SQD100N03-3M2L_GE3 equivalent, key selection criteria include its 3.2 mΩ on-resistance at 10 V gate drive, 100 % Rg and UIS testing, thermal performance under 125 °C case conditions, and compliance with automotive reliability standards.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and high current density in a surface-mount TO-252 package. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 77 nC total gate charge supports efficient switching in high-frequency synchronous buck stages.
The device integrates a robust body diode with 0.85–1.2 V forward voltage at 40 A and supports unclamped inductive switching up to 180 mJ avalanche energy. Thermal resistance from junction-to-case is 1.1 °C/W, enabling high-power operation when mounted on thermally optimized PCBs per Vishay's recommended DPAK pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 30 V - Supports 24 V automotive battery rail with margin for load dump transients |
| RDS(on) @ VGS = 10 V | 3.2 mΩ - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages |
| ID Continuous @ TC = 25 °C | 100 A - Delivers full-rated current with adequate heatsinking on 1"² FR-4 PCB |
| TJ Operating Range | −55 to +175 °C - Qualified for under-hood engine control unit (ECU) environments |
| Qg Total Gate Charge | 77 nC (typ.) - Determines driver strength requirement; ~10 mA average gate current at 1 MHz switching |
| EAS Single-Pulse Avalanche | 180 mJ - Withstands inductive turn-off stress without external snubbers in motor drives |
| RthJC | 1.1 °C/W - Allows direct thermal path from die to heatsink via drain-tab mounting |
Pinout & Package
TO-252AA (DPAK) package with exposed drain tab soldered to PCB for thermal and electrical connection. Dimensions per Vishay document 64424: 6.09 mm × 6.54 mm × 2.28 mm (L × W × H), 2.28 mm lead pitch (e), 4.56 mm center-to-center spacing (e1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / thermal interface | Electrically and thermally connected to PCB copper pour; must be routed for both conduction and heat dissipation |
| Gate | Control input for channel modulation | Low-impedance node requiring short, low-inductance trace to gate driver; sensitive to noise coupling |
| Source | Reference node for gate drive and current sensing | Typically tied to power ground plane; used as return path for sense resistor in high-side or low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, transmission, and ADAS power stages |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Enables lower RDS(on) and higher cell density vs. planar MOSFETs in same footprint |
| Drain-connected tab | Provides low-thermal-resistance path to PCB; eliminates need for insulated heatsink in many designs |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-current 12 V to 5 V/3.3 V conversion for microcontroller and sensor rails in engine bay. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in buck converter topology. Use Value: 3.2 mΩ RDS(on) minimizes conduction loss at 60 A peak, improving efficiency >94 % at full load and reducing thermal stress on PCB. | Use Scenario: 48 V to 12 V bidirectional power transfer in mild hybrid vehicle architectures. IC Role / Device Role / Timing Role: Primary high-current switch in interleaved buck-boost stage. Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure reliable operation during sustained 80 A conduction under hood ambient temperatures up to 125 °C. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Half-bridge leg in three-phase inverter driving 300 W assist motor. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch with integrated body diode commutation. Use Value: 180 mJ EAS rating withstands inductive kickback during PWM dead-time transitions without external clamping. | Use Scenario: 400 V to 12 V isolated auxiliary supply powering OBC control circuitry. IC Role / Device Role / Timing Role: Primary-side active clamp switch in resonant LLC topology. Use Value: 77 nC Qg enables fast turn-on/turn-off with standard gate drivers, reducing switching losses at 200–300 kHz operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A, RDS(on) = 1.7 mΩ @ 10 V, TO-263 package, AEC-Q101 qualified | Higher current rating and lower RDS(on), but larger footprint and higher gate charge (120 nC) | Select when board space allows larger package and system requires >150 A capability with lower conduction loss |
| IRF100N03LPM | 30 V, 100 A, RDS(on) = 3.3 mΩ @ 10 V, TO-252, not AEC-Q101 qualified | Lacks automotive qualification; lower cost but unsuitable for safety-critical ECU use | Select for non-automotive industrial or consumer applications where AEC-Q101 is not mandated |
Compared with STL220N3LLH6 and IRF100N03LPM, the SQD100N03-3M2L_GE3 offers optimal balance of automotive qualification, thermal performance (1.1 °C/W RthJC), and compact TO-252 footprint-making it preferred for space-constrained, high-reliability 100 A power stages where qualification and thermal efficiency are jointly critical.
Availability
SQD100N03-3M2L_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended production lifecycles.
Supply support for SQD100N03-3M2L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD100N03-3M2L_GE3 belongs to Vishay's TrenchFET® Gen III automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine compartment and chassis-mounted electronics.
FAQ
What is the maximum continuous drain current rating for SQD100N03-3M2L_GE3 at 125 °C case temperature?
The SQD100N03-3M2L_GE3 supports 89 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under elevated ambient conditions and must be validated against actual PCB layout and airflow in the target application.
Is SQD100N03-3M2L_GE3 suitable for logic-level gate drive applications?
Yes, the SQD100N03-3M2L_GE3 has a gate threshold voltage range of 1.5–2.5 V and delivers RDS(on) = 3.9 mΩ at VGS = 4.5 V, making it compatible with 3.3 V and 5 V microcontroller outputs without requiring level-shifting circuitry-ideal for direct-drive automotive MCU interfaces.
Does SQD100N03-3M2L_GE3 include avalanche energy rating information?
Yes, the SQD100N03-3M2L_GE3 is rated for 180 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, verified per JEDEC JESD24-1. This specification ensures robustness against inductive switching stress in motor control and relay-driving applications without external protection components.
What is the thermal resistance from junction to ambient for SQD100N03-3M2L_GE3 under standard PCB mounting?
The junction-to-ambient thermal resistance (RthJA) for SQD100N03-3M2L_GE3 is 50 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides. This value assumes no external heatsink and serves as a baseline for thermal design; actual performance improves significantly with enhanced copper area or thermal vias.
How is the drain terminal connected in the TO-252 package of SQD100N03-3M2L_GE3?
In the SQD100N03-3M2L_GE3, the drain is internally connected to the exposed metal tab of the TO-252 package. This tab must be soldered directly to a large PCB copper pour to serve dual functions: conducting high current and dissipating heat-no separate heatsink is required if thermal design guidelines are followed.
SQD100N03-3M2L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 116 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6316 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD100N03-3M2L_GE3 FAQ
1.How can I place an order for SQD100N03-3M2L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD100N03-3M2L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD100N03-3M2L_GE3 reliable?
The price and inventory of SQD100N03-3M2L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD100N03-3M2L_GE3 is usually 5 days.
3.What payment methods are accepted for SQD100N03-3M2L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD100N03-3M2L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD100N03-3M2L_GE3?
SQD100N03-3M2L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD100N03-3M2L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD100N03-3M2L_GE3?
For technical support, including SQD100N03-3M2L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD100N03-3M2L_GE3 requirements.
6.How does Aetrix verify that SQD100N03-3M2L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD100N03-3M2L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD100N03-3M2L_GE3 meets industry standards.
7.What is the process for return or replacement of SQD100N03-3M2L_GE3?
All SQD100N03-3M2L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD100N03-3M2L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD100N03-3M2L_GE3 part is unused and in its original packaging.
Return procedure for SQD100N03-3M2L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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