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Vishay Siliconix SQD100N03-3M4_GE3
- Part No.:
- SQD100N03-3M4_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD100N03-3M4_GE3.pdf
- Description:
- MOSFET N-CH 30V 100A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,951
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Product details
Overview
SQD100N03-3M4_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 100 A continuous drain current at TC = 25 °C, and 0.0034 Ω RDS(on) at VGS = 10 V and ID = 20 A. It features drain-connected tab in TO-252 (DPAK) package and operates up to +175 °C junction temperature, targeting high-current DC motor control and battery protection circuits in engine management systems.
For engineers reviewing the SQD100N03-3M4_GE3 datasheet, SQD100N03-3M4_GE3 pinout, SQD100N03-3M4_GE3 application, or SQD100N03-3M4_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.1 °C/W), gate charge (Qg = 82.7–124 nC), avalanche energy rating (EAS = 58 mJ), and AEC-Q101 qualification status - all critical for automotive power stage design validation.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its RDS(on) remains stable across -55 °C to +175 °C, with normalized on-resistance variation ≤1.8× over full temperature range, enabling robust performance in under-hood environments.
The device integrates a built-in body diode with forward voltage VSD = 0.84–1.2 V at IF = 30 A and VGS = 0 V, and supports unclamped inductive switching (UIS) with single-pulse avalanche current of 168 A and energy of 58 mJ - key for load dump and inductive kickback resilience.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) | 0.0034 Ω @ VGS = 10 V, ID = 20 A - Enables <1 W conduction loss at 50 A, reducing heatsink requirements in compact modules. |
| ID (cont.) | 100 A @ TC = 25 °C - Supports high-current loads such as starter relays, fuel pumps, and HVAC blowers without derating. |
| EAS | 58 mJ - Specifies unclamped inductive switching capability for solenoid and motor drive applications without external snubbers. |
| RthJC | 1.1 °C/W - Allows direct thermal path from die to heatsink via drain-tab mounting, enabling >90 W power dissipation at ΔT = 100 °C. |
| Qg | 82.7–124 nC - Determines gate driver power requirement; enables efficient 100 kHz switching with <1 W gate drive loss using standard drivers. |
| TJ Range | -55 to +175 °C - Qualified for under-hood placement per AEC-Q101, eliminating need for remote mounting or thermal shielding. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab. Dimensions per Vishay document 64424: D = 5.97–6.22 mm, E = 6.35–6.73 mm, H = 9.40–10.41 mm, tab area ≥ 4.10 × 4.32 mm² for thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level signal to fully enhance channel; 1.86 Ω typical gate resistance limits ringing and simplifies driver selection. |
| D (Drain) | Main power output / heat sink interface | Internally connected to metal tab; must be soldered to PCB copper pour or heatsink for thermal management and current return path. |
| S (Source) | Power return / reference node | Serves as common source for load current and gate drive reference; requires low-inductance layout to minimize switching noise coupling. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock - eliminates requalification effort for Tier 1 suppliers. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in safety-critical actuators. |
| TrenchFET® architecture | Delivers lowest RDS(on) × Qg figure-of-merit (≈0.28 Ω·nC) in 30 V DPAK, improving efficiency in PWM-driven loads. |
| Drain-connected tab | Enables direct thermal coupling to PCB or heatsink with <1.1 °C/W junction-to-case resistance - reduces system thermal footprint by >40 % vs. SO-8 alternatives. |
| 175 °C operation | Supports full-rated current at under-hood ambient up to 125 °C without derating - enables smaller enclosures and higher power density. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 12 V Automotive Battery Disconnect Switch |
|---|---|
Use Scenario: High-speed, high-current switching of multi-hole fuel injectors in gasoline direct injection systems requiring precise pulse-width modulation at 10–20 kHz. IC Role / Device Role / Timing Role: Primary power switch controlling injector coil current; operates in saturated on-state with <30 ns turn-off delay to support sub-millisecond fuel metering accuracy. Use Value: Low RDS(on) minimizes voltage drop during peak 12 A pulses, preserving injector solenoid force; 175 °C rating allows integration directly onto ECU board near combustion chamber sensors. | Use Scenario: Bidirectional isolation of starter battery from vehicle electrical system during jump-start, fault detection, or service disconnect events. IC Role / Device Role / Timing Role: Single-pole, double-throw (SPDT) solid-state switch replacing mechanical contactors; handles 100 A continuous and 160 A pulsed load currents. Use Value: Eliminates arcing and contact wear; 58 mJ avalanche energy rating absorbs inductive spikes from alternator field collapse without external clamping diodes. |
| Electric Power Steering (EPS) Motor Phase Leg | Commercial Vehicle HVAC Blower Control |
Use Scenario: Half-bridge phase leg in 3-phase brushless DC motor driver for rack-assist EPS systems operating in high-vibration, high-temperature engine bays. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter; commutated at 8–16 kHz with <15 ns rise/fall times to reduce acoustic noise and torque ripple. Use Value: Fast switching (Qgd = 14.1 nC) and low Crss (413–516 pF) suppress Miller-induced shoot-through; TO-252 tab mounting enables direct heatsinking to aluminum chassis. | Use Scenario: Variable-speed blower motor control in Class 8 truck HVAC systems where ambient temperatures exceed 105 °C and vibration exceeds 20 g RMS. IC Role / Device Role / Timing Role: High-current PWM switch regulating 60 A DC motor current via duty-cycle modulation at 5–10 kHz. Use Value: Stable RDS(on) over temperature ensures consistent airflow control across full operating range; AEC-Q101 qualification guarantees 15-year field life without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N3LLH6 | 30 V, 110 A, RDS(on) = 2.8 mΩ @ 10 V, TO-263 package, no AEC-Q101 certification | Lacks automotive qualification; suitable for industrial motor drives but not safety-critical vehicle systems | Select only for non-automotive applications where qualification documentation is not required. |
| IRF1404ZPBF | 40 V, 130 A, RDS(on) = 4.7 mΩ @ 10 V, TO-220 package, AEC-Q101 not claimed | Higher voltage rating increases cost and gate charge; through-hole mounting limits PCB density and thermal performance | Consider only if 40 V margin is mandatory and surface-mount constraints do not apply. |
Compared with STL110N3LLH6 and IRF1404ZPBF, the SQD100N03-3M4_GE3 uniquely combines AEC-Q101 qualification, TO-252 thermal efficiency (RthJC = 1.1 °C/W), and 30 V/100 A/3.4 mΩ specification - making it the only drop-in solution for space-constrained, thermally demanding automotive power stages requiring zero requalification.
Availability
SQD100N03-3M4_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, battery management systems, and electric power steering modules requiring stable component supply across extended production lifecycles.
Supply support for SQD100N03-3M4_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD100N03-3M4_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle subsystems where AEC-Q101 compliance and thermal robustness are mandatory.
FAQ
What is the maximum continuous drain current rating for SQD100N03-3M4_GE3 at 125 °C case temperature?
The SQD100N03-3M4_GE3 supports 87 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its 45 W maximum power dissipation limit at that temperature. Engineers must verify PCB copper area and heatsinking to maintain TC ≤ 125 °C under full-load conditions.
Does SQD100N03-3M4_GE3 have a qualified AEC-Q101 rating, and what tests does that include?
Yes, the SQD100N03-3M4_GE3 is explicitly AEC-Q101 qualified per the Vishay datasheet revision S12-2906-Rev. A. This includes stress testing for temperature cycling, high-temperature operating life, unbiased highly accelerated stress test (uHAST), and mechanical shock - all performed on the final packaged device. The qualification applies to the exact part number and TO-252 package configuration shipped by Vishay.
What is the typical total gate charge (Qg) for SQD100N03-3M4_GE3, and how does it impact gate driver selection?
The SQD100N03-3M4_GE3 has a typical total gate charge of 82.7 nC and a maximum of 124 nC at VGS = 10 V, VDS = 15 V, and ID = 50 A. This value determines the peak current and average power required from the gate driver; for 100 kHz switching, a driver capable of ≥2 A peak and ≥0.8 W average power is recommended to achieve clean 15 ns rise/fall times without overshoot.
Can SQD100N03-3M4_GE3 be used in synchronous rectification applications, and what is its body diode forward voltage?
Yes, the SQD100N03-3M4_GE3 can be used in synchronous rectification due to its low VSD of 0.84 V (typical) at IF = 30 A and VGS = 0 V. However, its body diode recovery time is not characterized in the datasheet, so hard-commutated topologies require careful dead-time optimization. For soft-switched designs like LLC resonant converters, the device's low Qrr and Crss support efficient operation when paired with appropriate gate timing.
What is the thermal resistance from junction to case (RthJC) for SQD100N03-3M4_GE3, and how should it be applied in thermal design?
The SQD100N03-3M4_GE3 has a junction-to-case thermal resistance of 1.1 °C/W, measured from die to the drain-connected metal tab. In thermal design, this value must be combined with the thermal resistance of the interface material (e.g., thermal pad or paste) and heatsink to calculate total junction-to-ambient resistance. For example, with a 0.5 °C/W heatsink and 0.2 °C/W interface, TJ = TC + (PD × 1.8 °C/W), enabling accurate junction temperature prediction under load.
SQD100N03-3M4_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 124 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7349 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD100N03-3M4_GE3 FAQ
1.How can I place an order for SQD100N03-3M4_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD100N03-3M4_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD100N03-3M4_GE3 reliable?
The price and inventory of SQD100N03-3M4_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD100N03-3M4_GE3 is usually 5 days.
3.What payment methods are accepted for SQD100N03-3M4_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD100N03-3M4_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD100N03-3M4_GE3?
SQD100N03-3M4_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD100N03-3M4_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD100N03-3M4_GE3?
For technical support, including SQD100N03-3M4_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD100N03-3M4_GE3 requirements.
6.How does Aetrix verify that SQD100N03-3M4_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD100N03-3M4_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD100N03-3M4_GE3 meets industry standards.
7.What is the process for return or replacement of SQD100N03-3M4_GE3?
All SQD100N03-3M4_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD100N03-3M4_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD100N03-3M4_GE3 part is unused and in its original packaging.
Return procedure for SQD100N03-3M4_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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