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Vishay Siliconix SQD100N04-3M6_GE3
- Part No.:
- SQD100N04-3M6_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD100N04-3M6_GE3.pdf
- Description:
- MOSFET N-CH 40V 100A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,226
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Product details
Overview
SQD100N04-3M6_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 100 A continuous drain current at TC = 25 °C, and 3.6 mΩ RDS(on) at VGS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab - deployed in high-current DC motor drives and 12 V/24 V automotive body control modules.
For engineers reviewing the SQD100N04-3M6_GE3 datasheet, SQD100N04-3M6_GE3 pinout, SQD100N04-3M6_GE3 application, or SQD100N04-3M6_GE3 equivalent, key selection criteria include its low RDS(on) stability over temperature, 100 % Rg and UIS testing, thermal resistance (RthJC = 1.1 °C/W), and compliance with automotive reliability and safety requirements.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-duty-cycle automotive power stages. Its gate charge profile (Qg = 70–105 nC, Qgd = 13 nC) supports efficient PWM operation up to 100 kHz in brushed DC motor controllers and solenoid drivers.
The device integrates a robust intrinsic body diode (VSD = 0.9–1.5 V at IF = 30 A) with 62 A single-pulse avalanche current rating and 192 mJ avalanche energy - enabling reliable operation under inductive load switching transients without external freewheeling diodes in many applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems including load dump conditions. |
| RDS(on) | 3.6 mΩ at VGS = 10 V, ID = 20 A - Enables <1 W conduction loss at 50 A, critical for thermally constrained engine bay layouts. |
| ID (continuous) | 100 A at TC = 25 °C - Supports high-current loads such as HVAC blowers and power seat actuators without forced cooling. |
| TJ max | +175 °C - Meets under-hood thermal requirements per AEC-Q101, allowing direct mounting on aluminum heat sinks. |
| RthJC | 1.1 °C/W - Enables predictable thermal design with minimal interface resistance when mounted to heatsink via drain-tab. |
| Qg / Qgd | 70–105 nC / 13 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations. |
| EAS | 192 mJ - Withstands repetitive inductive switching events in starter relays and fuel pump drivers without degradation. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab, 3-terminal configuration. Dimensions per Vishay document 64424: D = 5.97–6.22 mm, E = 6.35–6.73 mm, H = 9.40–10.41 mm, tab area enables direct thermal coupling to PCB copper or external heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level drive; threshold voltage 2.5–3.5 V ensures compatibility with 3.3 V/5 V microcontrollers via gate driver. |
| D (Drain) | High-side power path | Internally connected to metal tab - must be electrically isolated from PCB ground unless used as system ground reference. |
| S (Source) | Power return / reference node | Serves as local ground for gate drive; source inductance impacts switching speed and requires minimized loop area in layout. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per stress test plan. |
| 100 % Rg tested | Ensures consistent gate resistance (0.9–2.8 Ω), critical for predictable turn-on/turn-off timing across production lots. |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs, improving efficiency in 10–100 kHz PWM applications. |
| Drain-connected tab | Provides low-thermal-resistance path (RthJC = 1.1 °C/W) to heatsink or copper pour, reducing junction temperature rise by >30 °C vs. standard SO-8. |
| 100 % UIS tested | Each unit validated for unclamped inductive switching robustness - eliminates field failures in relay and solenoid drive circuits. |
Applications
| Automotive Body Control Module (BCM) | 12 V Brushed DC Motor Drive |
|---|---|
Use Scenario: Controlling power windows, door locks, and mirror actuators in modern BCMs with centralized power distribution. IC Role / Device Role / Timing Role: High-side switch replacing electromechanical relays; handles 30–80 A peak loads with PWM dimming capability. Use Value: Eliminates relay chatter and contact wear while enabling diagnostics via current sensing through low RDS(on) path. | Use Scenario: Driving HVAC blower motors and radiator cooling fans in passenger vehicles with variable-speed control. IC Role / Device Role / Timing Role: Low-side or high-side PWM switch operating at 20–50 kHz with synchronous rectification support. Use Value: Reduces conduction loss by >40 % versus older 5–8 mΩ MOSFETs, lowering thermal management cost and PCB area. |
| Fuel Pump Driver | Starter Solenoid Interface |
Use Scenario: Regulating 12 V fuel pump current in gasoline direct injection (GDI) systems requiring precise flow control. IC Role / Device Role / Timing Role: Constant-current switch with integrated overcurrent protection and thermal foldback. Use Value: Sustains 15–25 A continuous operation at TJ = 150 °C while surviving 400 A pulsed surge during startup. | Use Scenario: Replacing mechanical starter solenoids in start-stop systems with electronic engagement control. IC Role / Device Role / Timing Role: High-energy pulse switch handling 300–400 A inductive turn-off transients. Use Value: Avalanche-rated (IAS = 62 A, EAS = 192 mJ) operation avoids external snubbers and improves system reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 3.7 mΩ @ 10 V, AEC-Q101 qualified, same TO-252 package but higher Qg (115 nC). | Higher gate charge increases driver loss in high-frequency (>50 kHz) PWM; better suited for lower-switching-frequency solenoid control. | Select when prioritizing long-term supply continuity over switching efficiency in 10–25 kHz applications. |
| IRL1404ZPBF | RDS(on) = 4.0 mΩ @ 10 V, not AEC-Q101 qualified, TO-220 package with higher RthJC (2.5 °C/W). | Lacks automotive qualification and thermal performance; limited to industrial/non-safety-critical 12 V loads. | Acceptable only for non-automotive prototypes or cost-sensitive industrial designs where qualification is not required. |
Compared with STL220N4F7AG and IRL1404ZPBF, the SQD100N04-3M6_GE3 delivers superior thermal performance (RthJC = 1.1 °C/W), lower gate charge, and full AEC-Q101 validation - making it the preferred choice for production automotive power stages requiring reliability, efficiency, and regulatory compliance.
Availability
SQD100N04-3M6_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, 12 V/24 V motor control, and high-reliability industrial power switching requiring stable component supply across multi-year production cycles.
Supply support for SQD100N04-3M6_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD100N04-3M6_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature under-hood applications demanding AEC-Q101 reliability and low RDS(on) × Qg trade-offs.
FAQ
What is the maximum continuous drain current rating for SQD100N04-3M6_GE3 at 125 °C case temperature?
The SQD100N04-3M6_GE3 supports 76 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsinking to maintain TC ≤ 125 °C under full-load conditions.
Is SQD100N04-3M6_GE3 suitable for high-frequency PWM motor control above 50 kHz?
Yes, the SQD100N04-3M6_GE3 supports PWM frequencies up to 100 kHz due to its low total gate charge (70–105 nC) and fast switching times (td(on) = 11–16 ns, tf = 9–14 ns). However, layout optimization - especially minimizing source inductance and gate loop area - is essential to realize these timings and avoid oscillation or shoot-through in bridge configurations.
Does SQD100N04-3M6_GE3 have an integrated body diode, and what is its forward voltage?
Yes, the SQD100N04-3M6_GE3 includes a monolithic body diode with VSD = 0.9–1.5 V at IF = 30 A and VGS = 0 V. This diode is rated for 400 A pulsed source current (ISM) and supports freewheeling in inductive loads. Its characteristics are fully characterized in the datasheet's Source-Drain Diode Ratings section.
What is the gate threshold voltage range for SQD100N04-3M6_GE3, and how does it affect microcontroller compatibility?
The gate threshold voltage (VGS(th)) for SQD100N04-3M6_GE3 is 2.5–3.5 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic outputs, though a dedicated gate driver is recommended for full enhancement (RDS(on) spec met at VGS = 10 V) and fast switching. The low threshold also reduces risk of partial turn-on during noisy automotive transients.
How is thermal performance quantified for SQD100N04-3M6_GE3, and what does RthJC = 1.1 °C/W mean in practice?
RthJC = 1.1 °C/W means that for every watt dissipated at the die, the junction-to-case temperature difference is 1.1 °C - assuming optimal mounting to a heatsink or copper plane. In practice, with 100 A × 3.6 mΩ = 36 W conduction loss, junction temperature rises only ~40 °C above case temperature, enabling compact thermal design in space-constrained automotive modules.
SQD100N04-3M6_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD100N04-3M6_GE3 FAQ
1.How can I place an order for SQD100N04-3M6_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD100N04-3M6_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD100N04-3M6_GE3 reliable?
The price and inventory of SQD100N04-3M6_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD100N04-3M6_GE3 is usually 5 days.
3.What payment methods are accepted for SQD100N04-3M6_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD100N04-3M6_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD100N04-3M6_GE3?
SQD100N04-3M6_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD100N04-3M6_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD100N04-3M6_GE3?
For technical support, including SQD100N04-3M6_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD100N04-3M6_GE3 requirements.
6.How does Aetrix verify that SQD100N04-3M6_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD100N04-3M6_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD100N04-3M6_GE3 meets industry standards.
7.What is the process for return or replacement of SQD100N04-3M6_GE3?
All SQD100N04-3M6_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD100N04-3M6_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD100N04-3M6_GE3 part is unused and in its original packaging.
Return procedure for SQD100N04-3M6_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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