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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD100N04-3M6L_GE3

Name: SQD100N04-3M6L_GE3
Brand: Vishay Siliconix
SKU: SQD100N04-3M6L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD100N04-3M6L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD100N04-3M6L_GE3.pdf

Description:: MOSFET N-CH 40V 100A TO252AA

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Product details

Overview

SQD100N04-3M6L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V V_DS, 100 A continuous drain current at T_C = 25 °C, and R_DS(on) of 3.6 mΩ at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab for enhanced thermal performance in high-current motor control and DC-DC converter applications.

For engineers reviewing the SQD100N04-3M6L_GE3 datasheet, SQD100N04-3M6L_GE3 pinout, SQD100N04-3M6L_GE3 application, or SQD100N04-3M6L_GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive (4.2 mΩ), robust UIS and 100% R_g testing, thermal resistance R_thJC = 1.1 °C/W, and suitability for high-reliability automotive power stages requiring stable conduction under 175 °C junction conditions.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching with Q_g = 85–130 nC and t_d(off) = 39–47 ns. Its gate threshold voltage (1.5–2.5 V) supports standard 3.3 V and 5 V logic-level drive while maintaining robust noise immunity.

The device integrates a source-drain diode with V_SD = 0.9–1.5 V at I_F = 30 A and is characterized for avalanche energy (E_AS = 151 mJ), enabling reliable operation in inductive switching circuits such as solenoid drivers and H-bridge motor controllers without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	3.6 mΩ - Enables ≤ 3.6 W conduction loss at 100 A, critical for high-efficiency 48 V mild-hybrid DC-DC stages.
R_DS(on) @ V_GS = 4.5 V	4.2 mΩ - Ensures full enhancement with 5 V microcontroller GPIO or gate driver ICs without level-shifting.
I_D (continuous, T_C = 25 °C)	100 A - Supports high-current loads like electric power steering (EPS) phase legs and HVAC blower drives.
R_thJC	1.1 °C/W - Allows direct heatsinking via drain-tab mounting, enabling > 100 W power dissipation with modest thermal interface.
E_AS	151 mJ - Rated single-pulse avalanche capability ensures ruggedness against inductive kickback in relay and solenoid switching.
T_J max	+175 °C - Qualified for under-hood automotive environments including engine control units and transmission control modules.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected metal tab for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires <1.5 Ω gate resistance (R_g) for optimal switching speed and EMI control.
D (Drain)	High-side power output	Connected internally to exposed metal tab; must be soldered to large copper area for thermal management and low-inductance return path.
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; layout must minimize source inductance to prevent oscillation during turn-on.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling - enables use in safety-critical power systems without additional qualification effort.
100 % R_g and UIS tested	Each unit undergoes production screening for gate resistance (0.6–3 Ω) and unclamped inductive switching - guarantees robustness in real-world inductive load transients.
TrenchFET® technology	Delivers 20 % lower R_DS(on) vs. planar MOSFETs at same die size - improves power density in space-constrained ECUs and ADAS domain controllers.
Low C_iss/C_oss ratio	C_iss = 4880–5860 pF, C_oss = 560–670 pF - enables efficient zero-voltage switching (ZVS) in resonant topologies and reduces Miller-induced shoot-through risk.
Drain-tab thermal path	R_thJC = 1.1 °C/W - permits direct attachment to heatsink or internal PCB copper, reducing system thermal resistance by ≥40 % vs. SO-8 alternatives.

Applications

Automotive Engine Control	48 V Mild-Hybrid DC-DC Converter
Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling inductive load timing with precise pulse-width modulation at up to 20 kHz. Use Value: 175 °C rating ensures reliability near hot engine blocks; 151 mJ E_AS withstands repetitive inductive flyback without snubber circuitry.	Use Scenario: Synchronous rectifier in bidirectional buck-boost converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: Low-loss power FET operating in hard-switched or ZVS mode with gate drive synchronized to controller PWM. Use Value: 4.2 mΩ R_DS(on) at 4.5 V enables >97 % efficiency at 50 A output; TO-252 drain tab simplifies thermal integration into compact power module PCBs.
Electric Power Steering (EPS)	Commercial Vehicle HVAC Blower
Use Scenario: Phase-leg switch in three-phase inverter driving EPS assist motor. IC Role / Device Role / Timing Role: High-current N-channel switch in H-bridge topology, commutated at 8–16 kHz with dead-time control. Use Value: 100 A continuous rating supports peak torque assist; low Q_gd/Q_gs ratio minimizes switching losses during rapid direction reversal.	Use Scenario: High-side main power switch for 24 V HVAC blower motor in trucks and buses. IC Role / Device Role / Timing Role: Direct-drive power switch controlled by microcontroller GPIO or dedicated gate driver IC. Use Value: AEC-Q101 qualification ensures compliance with heavy-duty vehicle environmental standards; 1.1 °C/W R_thJC sustains 80 A continuous current in confined chassis enclosures.

Automotive Engine Control

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling inductive load timing with precise pulse-width modulation at up to 20 kHz.

Use Value: 175 °C rating ensures reliability near hot engine blocks; 151 mJ E_AS withstands repetitive inductive flyback without snubber circuitry.

Use Scenario: Synchronous rectifier in bidirectional buck-boost converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Low-loss power FET operating in hard-switched or ZVS mode with gate drive synchronized to controller PWM.

Use Value: 4.2 mΩ R_DS(on) at 4.5 V enables >97 % efficiency at 50 A output; TO-252 drain tab simplifies thermal integration into compact power module PCBs.

Electric Power Steering (EPS)

Commercial Vehicle HVAC Blower

Use Scenario: Phase-leg switch in three-phase inverter driving EPS assist motor.

IC Role / Device Role / Timing Role: High-current N-channel switch in H-bridge topology, commutated at 8–16 kHz with dead-time control.

Use Value: 100 A continuous rating supports peak torque assist; low Q_gd/Q_gs ratio minimizes switching losses during rapid direction reversal.

Use Scenario: High-side main power switch for 24 V HVAC blower motor in trucks and buses.

IC Role / Device Role / Timing Role: Direct-drive power switch controlled by microcontroller GPIO or dedicated gate driver IC.

Use Value: AEC-Q101 qualification ensures compliance with heavy-duty vehicle environmental standards; 1.1 °C/W R_thJC sustains 80 A continuous current in confined chassis enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V, but only rated to 150 °C TJ; no AEC-Q101 documentation confirmed.	Not qualified for automotive under-hood use; suitable for industrial motor drives where ambient <125 °C.	Select only if thermal margin allows and automotive qualification is not required.
IRF1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V, TO-220 package, R_thJC = 1.25 °C/W, non-automotive grade.	Larger footprint and higher thermal resistance limit power density; lacks UIS and R_g production screening.	Use only in cost-sensitive non-automotive designs where PCB space and thermal performance are less constrained.

Compared with STL220N4F7AG and IRF1404ZPBF, the SQD100N04-3M6L_GE3 delivers superior automotive readiness (AEC-Q101 + 175 °C), lower conduction loss at 4.5 V gate drive, and verified avalanche ruggedness - making it the preferred choice for safety-critical, high-temperature, high-current automotive power stages.

Availability

SQD100N04-3M6L_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V mild-hybrid converters, and electric power steering systems requiring stable component supply across extended product lifecycles.

Supply support for SQD100N04-3M6L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQD100N04-3M6L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation vehicle electrification systems.

FAQ

What is the maximum continuous drain current rating for SQD100N04-3M6L_GE3 at 125 °C case temperature?

The SQD100N04-3M6L_GE3 supports 80 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-power operation and must be validated with actual board-level thermal design using the provided R_thJC = 1.1 °C/W and R_thJA = 50 °C/W values.

Is SQD100N04-3M6L_GE3 suitable for 5 V logic-level gate drive without a gate driver IC?

Yes, SQD100N04-3M6L_GE3 has a gate threshold voltage range of 1.5–2.5 V and achieves R_DS(on) = 4.2 mΩ at V_GS = 4.5 V, making it fully enhancement-mode compatible with 5 V microcontroller outputs. However, due to its 85–130 nC total gate charge, a dedicated gate driver is recommended for switching frequencies above 50 kHz to ensure clean transitions and minimize switching losses.

Does SQD100N04-3M6L_GE3 have integrated avalanche ruggedness, and what is its rated energy?

Yes, SQD100N04-3M6L_GE3 is characterized for unclamped inductive switching (UIS) with a rated single-pulse avalanche energy E_AS of 151 mJ at T_J = 25 °C. This value is measured per JEDEC standard JESD24-1 and confirms the device's ability to safely absorb inductive energy during fault events such as short-circuit turn-off in motor drives.

What is the thermal resistance from junction to case (R_thJC) for SQD100N04-3M6L_GE3, and how should it be used in thermal design?

The SQD100N04-3M6L_GE3 has R_thJC = 1.1 °C/W, measured from junction to the drain-connected tab. In thermal design, this value applies when the tab is soldered to a thermally optimized copper area or external heatsink. It must be combined with the thermal resistance of the interface material and heatsink to calculate total junction-to-ambient resistance - never used alone to estimate ambient temperature limits.

How does the AEC-Q101 qualification of SQD100N04-3M6L_GE3 impact its use in automotive applications?

The AEC-Q101 qualification of SQD100N04-3M6L_GE3 certifies that the device meets rigorous stress-test requirements for automotive discrete semiconductors, including high-temperature gate bias, temperature cycling, and humidity testing. This qualification allows direct use in ASIL-B and ASIL-C systems without additional component-level qualification, accelerating time-to-market for engine control, transmission, and ADAS power modules.

SQD100N04-3M6L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD100N04-3M6L_GE3 FAQ

1.How can I place an order for SQD100N04-3M6L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD100N04-3M6L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD100N04-3M6L_GE3 reliable?

The price and inventory of SQD100N04-3M6L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD100N04-3M6L_GE3 is usually 5 days.

3.What payment methods are accepted for SQD100N04-3M6L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD100N04-3M6L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD100N04-3M6L_GE3?

SQD100N04-3M6L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD100N04-3M6L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD100N04-3M6L_GE3?

For technical support, including SQD100N04-3M6L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD100N04-3M6L_GE3 requirements.

6.How does Aetrix verify that SQD100N04-3M6L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD100N04-3M6L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD100N04-3M6L_GE3 meets industry standards.

7.What is the process for return or replacement of SQD100N04-3M6L_GE3?

All SQD100N04-3M6L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD100N04-3M6L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD100N04-3M6L_GE3 part is unused and in its original packaging.

Return procedure for SQD100N04-3M6L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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