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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD100N04_3M6T4GE3

Name: SQD100N04_3M6T4GE3
Brand: Vishay Siliconix
SKU: SQD100N04_3M6T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD100N04_3M6T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD100N04_3M6T4GE3.pdf

Description:: MOSFET N-CH 40V 100A TO252AA

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Product details

Overview

SQD100N04_3M6T4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 3.6 mΩ R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab-designed for high-current DC motor control in electric power steering (EPS) systems.

For engineers reviewing the SQD100N04_3M6T4GE3 datasheet, SQD100N04_3M6T4GE3 pinout, SQD100N04_3M6T4GE3 application, or SQD100N04_3M6T4GE3 equivalent, key selection criteria include its low R_DS(on) at elevated temperature, robust UIS capability (62 A single-pulse avalanche current), and validated thermal resistance (R_thJC = 1.1 °C/W) for thermally constrained automotive PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive subsystems. Its gate charge profile (Q_g = 70–105 nC, Q_gd = 13 nC) supports efficient PWM operation up to 100 kHz while maintaining low E_off due to controlled dV/dt characteristics.

The device integrates a robust body diode with V_SD = 0.9–1.5 V at I_F = 30 A and I_SM = 400 A pulsed source current capability-enabling freewheeling and regenerative braking functions without external diodes in H-bridge motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V nominal automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	3.6 mΩ - Enables <1 W conduction loss at 50 A, critical for thermal management in EPS and HVAC blower modules.
I_D (continuous)	100 A @ T_C = 25 °C - Supports high-torque motor phases without parallel devices in compact DPAK footprint.
E_AS	192 mJ - Withstands inductive energy from 0.1 mH loads at 62 A, ensuring reliability during fault conditions like short-circuit turn-off.
R_thJC	1.1 °C/W - Allows direct heatsinking via drain-tab mounting, enabling >100 W power dissipation with minimal ΔT between junction and heatsink.
Q_g	70–105 nC - Determines gate driver power requirement; enables use of low-cost integrated drivers (e.g., DRV8305) without external boost stages.
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101, supporting placement near engine compartments or inverters.

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain tab on bottom side for thermal and electrical connection. Dimensions per Vishay document 64424: 6.07 × 6.54 × 2.28 mm (L × W × H), 2.28 mm lead pitch (e), 4.56 mm center-to-center spacing (e1).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive to fully enhance channel; requires <2.8 Ω gate resistance to limit ringing during 11 ns turn-on delay.
D (Drain)	High-side switch output / Power return path	Internally connected to exposed copper tab; must be soldered to large PCB copper pour or heatsink for thermal and current conduction.
S (Source)	Reference node / Current sense point	Provides Kelvin connection for accurate current sensing; referenced to system ground in low-side configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including powertrain and chassis systems per stress test requirements (HTOL, TC, UHAST).
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness-reducing field failure risk in motor commutation.
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar MOSFETs at same die size, enabling smaller PCB area and higher power density in EPS ECUs.
Low C_iss/C_oss ratio	5360 pF/500 pF - Improves hard-switching efficiency and reduces EMI generation during 20 V/50 A transitions.
Drain-connected tab	Eliminates need for insulated mounting hardware; simplifies thermal interface design while reducing BOM count and assembly cost.

Applications

Electric Power Steering (EPS)	Automotive HVAC Blower
Use Scenario: High-efficiency three-phase inverter driving brushless DC motor in column-assist EPS module. IC Role / Device Role / Timing Role: Low-side and high-side switching element in each half-bridge leg, operating at 16–20 kHz PWM with synchronous rectification. Use Value: 3.6 mΩ R_DS(on) minimizes I²R losses during peak 80 A phase currents, enabling 97 % inverter efficiency at full assist torque.	Use Scenario: Single-phase H-bridge controlling bidirectional 12 V DC fan motor in climate control system. IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 400 A pulsed source rating supports instantaneous stall current during blade obstruction, preventing MOSFET failure without external protection.
Onboard Charger (OBC) DC-DC Stage	12 V Auxiliary Power Module
Use Scenario: Synchronous rectifier in isolated LLC resonant converter delivering 3.3 kW to 400 V battery pack. IC Role / Device Role / Timing Role: Secondary-side rectifying switch synchronized to primary-side timing, replacing Schottky diodes to reduce conduction loss. Use Value: 1.1 °C/W R_thJC allows direct tab-to-heatsink mounting, sustaining 100 A RMS current with <45 °C junction rise above ambient.	Use Scenario: High-current load switch managing power distribution to ADAS camera, radar, and infotainment subsystems. IC Role / Device Role / Timing Role: Hot-swap and reverse-polarity protected main power switch with controlled slew rate and overcurrent limiting. Use Value: 175 °C T_J max and AEC-Q101 qualification ensure uninterrupted operation during extended engine-off parking mode at +85 °C ambient.

Electric Power Steering (EPS)

Automotive HVAC Blower

Use Scenario: High-efficiency three-phase inverter driving brushless DC motor in column-assist EPS module.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in each half-bridge leg, operating at 16–20 kHz PWM with synchronous rectification.

Use Value: 3.6 mΩ R_DS(on) minimizes I²R losses during peak 80 A phase currents, enabling 97 % inverter efficiency at full assist torque.

Use Scenario: Single-phase H-bridge controlling bidirectional 12 V DC fan motor in climate control system.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 400 A pulsed source rating supports instantaneous stall current during blade obstruction, preventing MOSFET failure without external protection.

Onboard Charger (OBC) DC-DC Stage

12 V Auxiliary Power Module

Use Scenario: Synchronous rectifier in isolated LLC resonant converter delivering 3.3 kW to 400 V battery pack.

IC Role / Device Role / Timing Role: Secondary-side rectifying switch synchronized to primary-side timing, replacing Schottky diodes to reduce conduction loss.

Use Value: 1.1 °C/W R_thJC allows direct tab-to-heatsink mounting, sustaining 100 A RMS current with <45 °C junction rise above ambient.

Use Scenario: High-current load switch managing power distribution to ADAS camera, radar, and infotainment subsystems.

IC Role / Device Role / Timing Role: Hot-swap and reverse-polarity protected main power switch with controlled slew rate and overcurrent limiting.

Use Value: 175 °C T_J max and AEC-Q101 qualification ensure uninterrupted operation during extended engine-off parking mode at +85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V; TO-263 package; 175 °C rating; no AEC-Q101 documentation publicly available.	Same R_DS(on) and voltage class but larger D²PAK footprint increases PCB area by 35 %; lacks formal automotive qualification evidence.	Select when board space permits larger package and AEC-Q101 compliance is not contractually required.
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V; TO-220AB package; 175 °C rating; AEC-Q101 qualified per Infineon documentation.	Through-hole mounting requires wave soldering or manual assembly; higher R_thJA (62 °C/W) limits power handling in compact enclosures.	Select only for legacy through-hole designs where rework to SMT is not feasible; avoid in new automotive SMT platforms.

Compared with STL220N4F7AG and IRL1404ZPBF, SQD100N04_3M6T4GE3 offers the lowest thermal resistance in a surface-mount automotive-qualified package, enabling higher power density and simplified thermal design in next-generation EPS and OBC modules.

Availability

SQD100N04_3M6T4GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), onboard charger (OBC) DC-DC converters, and 12 V auxiliary power modules requiring stable component supply across automotive production lifecycles.

Supply support for SQD100N04_3M6T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD100N04_3M6T4GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature motor control and power conversion in safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQD100N04_3M6T4GE3 at 125 °C case temperature?

SQD100N04_3M6T4GE3 supports 76 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects increased R_DS(on) (up to 6.3 mΩ at 125 °C and 7.6 mΩ at 175 °C), requiring careful thermal design to maintain safe junction temperature in high-ambient environments.

Is SQD100N04_3M6T4GE3 suitable for synchronous rectification in automotive DC-DC converters?

Yes, SQD100N04_3M6T4GE3 is well-suited for synchronous rectification due to its low R_DS(on) (3.6 mΩ), fast switching (t_r = 5–8 ns), and robust body diode (V_SD = 0.9–1.5 V). Its 175 °C rating and AEC-Q101 qualification make it appropriate for high-efficiency 400 V/12 V bi-directional converters in onboard chargers.

Does SQD100N04_3M6T4GE3 have a documented avalanche rating?

Yes, SQD100N04_3M6T4GE3 has a specified single-pulse avalanche rating: I_AS = 62 A (L = 0.1 mH) and E_AS = 192 mJ. This is validated per JEDEC JESD24-11 and supports reliable operation during inductive switching faults in motor drive applications.

What is the gate threshold voltage range for SQD100N04_3M6T4GE3?

The gate threshold voltage (V_GS(th)) for SQD100N04_3M6T4GE3 is 2.5 V minimum to 3.5 V maximum at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity in noisy automotive environments.

How does the thermal resistance of SQD100N04_3M6T4GE3 compare between junction-to-case and junction-to-ambient?

SQD100N04_3M6T4GE3 has R_thJC = 1.1 °C/W (junction-to-case, drain tab) and R_thJA = 50 °C/W (junction-to-ambient, 1"×1" FR-4 PCB). The 45× difference highlights the necessity of proper heatsinking: effective thermal performance depends almost entirely on the quality of the drain-tab interface to an external heatsink or copper plane.

SQD100N04_3M6T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD100N04_3M6T4GE3 FAQ

1.How can I place an order for SQD100N04_3M6T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD100N04_3M6T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD100N04_3M6T4GE3 reliable?

The price and inventory of SQD100N04_3M6T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD100N04_3M6T4GE3 is usually 5 days.

3.What payment methods are accepted for SQD100N04_3M6T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD100N04_3M6T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD100N04_3M6T4GE3?

SQD100N04_3M6T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD100N04_3M6T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD100N04_3M6T4GE3?

For technical support, including SQD100N04_3M6T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD100N04_3M6T4GE3 requirements.

6.How does Aetrix verify that SQD100N04_3M6T4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD100N04_3M6T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD100N04_3M6T4GE3 meets industry standards.

7.What is the process for return or replacement of SQD100N04_3M6T4GE3?

All SQD100N04_3M6T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD100N04_3M6T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD100N04_3M6T4GE3 part is unused and in its original packaging.

Return procedure for SQD100N04_3M6T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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