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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD10950E_GE3

Name: SQD10950E_GE3
Brand: Vishay Siliconix
SKU: SQD10950E_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD10950E_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD10950E_GE3.pdf

Description:: MOSFET N-CH 250V 11.5A TO252AA

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Product details

Overview

SQD10950E_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 250 V drain-source voltage, 11.5 A continuous drain current at 25 °C, and 0.162 Ω R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab - used in high-reliability DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQD10950E_GE3 datasheet, SQD10950E_GE3 pinout, SQD10950E_GE3 application, or SQD10950E_GE3 equivalent, key selection criteria include its 2.4 °C/W junction-to-case thermal resistance, 100 % R_g and UIS tested reliability, gate charge of 10.6 nC (typ), and body diode reverse recovery time of 127 ns (typ) - all critical for high-frequency switching and automotive thermal cycling validation.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in unidirectional high-side or low-side configurations. Its gate threshold voltage (2.5–3.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 1.9–5.7 Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.

The device integrates a robust intrinsic body diode with Q_rr = 583 nC (typ) and t_rr = 127 ns (typ), enabling reliable freewheeling in inductive loads. Its SOA curve is limited by R_DS(on) at DC and by avalanche energy (5 mJ) during transient overvoltage events - validated per AEC-Q101 stress testing protocols.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports 24 V and 48 V automotive bus architectures with ≥2× voltage margin against load dump transients.
R_DS(on) @ V_GS = 10 V	0.162 Ω - delivers ≤2.1 W conduction loss at 11.5 A, enabling compact thermal design on FR4 PCBs.
I_D (continuous)	11.5 A @ T_C = 25 °C - usable up to 6.6 A at 125 °C case temperature, supporting sustained operation in under-hood environments.
Q_g	10.6 nC (typ) - enables efficient 100–200 kHz switching with <1 W gate drive power using standard MOSFET drivers.
t_rr / Q_rr	127 ns / 583 nC (typ) - minimizes diode switching loss and EMI in synchronous rectification and H-bridge topologies.
R_thJC	2.4 °C/W - allows direct heatsinking via drain tab, reducing junction temperature rise by >30 °C vs. ambient-only cooling.
T_J max	+175 °C - qualified for engine control units (ECUs), transmission control modules (TCMs), and battery disconnect units requiring extended temperature operation.

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain tab thermally and electrically connected to the drain terminal. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Mounting requires soldering the drain tab to ≥1"² copper area on FR4 PCB for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10 V logic-level signals; 3.0 V typical V_GS(th) ensures reliable turn-on with microcontroller GPIO or dedicated gate drivers.
D	Drain output / heat path	Connected to high-side switch node or DC bus; tab must be soldered to PCB copper for thermal conduction and current return path.
S	Source reference / return	Common source node for gate drive reference and load current return; ties to ground or low-side switch source in half-bridge layouts.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, transmission, and ADAS subsystems per stress test requirements.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures due to avalanche overstress.
TrenchFET® architecture	Delivers lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs, improving efficiency in 100–500 kHz SMPS designs.
Low R_thJC (2.4 °C/W)	Enables >60 % higher power density vs. comparable TO-220 devices when mounted on standard PCBs without external heatsinks.
Body diode with t_rr = 127 ns	Reduces switching losses and voltage spikes in flyback, buck-boost, and motor phase-leg freewheeling paths.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection (GDI) systems operating at 12 V nominal bus with ±100 V transients. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; operates in PWM mode at 1–10 kHz with precise dead-time control. Use Value: 0.162 Ω R_DS(on) limits I²R loss to <2 W at peak 11.5 A, while 127 ns t_rr prevents voltage overshoot during rapid current reversal.	Use Scenario: Primary-side synchronous rectifier in isolated bidirectional DC-DC converter linking 12 V starter battery and 48 V Li-ion auxiliary battery. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; switches at 200 kHz with zero-voltage switching (ZVS) assistance. Use Value: 10.6 nC Q_g enables ZVS turn-on with minimal gate driver power; 175 °C rating sustains operation during prolonged boost-mode overload conditions.
Electric Power Steering (EPS) Motor Phase Leg	Onboard Charger (OBC) AC-DC Front-End
Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC motor in EPS system, subject to vibration, thermal cycling, and EMI constraints. IC Role / Device Role / Timing Role: Low-side switch in motor phase leg; commutated at 8–20 kHz with active short-circuit protection. Use Value: AEC-Q101 qualification ensures reliability across -40 to +150 °C ambient; 5 mJ E_AS withstands fault currents during short-circuit events without failure.	Use Scenario: PFC boost switch in 3.3 kW onboard charger converting 230 V AC to 400 V DC, operating continuously at 65 °C ambient. IC Role / Device Role / Timing Role: Fast-switching boost transistor in continuous conduction mode (CCM); duty cycle varies from 20 % to 80 %. Use Value: 250 V V_DS provides 1.5× margin over 400 V DC bus; 0.1443 Ω R_DS(on) @ 7.5 V enables gate drive from standard 12 V supply without level-shifting.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection (GDI) systems operating at 12 V nominal bus with ±100 V transients.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; operates in PWM mode at 1–10 kHz with precise dead-time control.

Use Value: 0.162 Ω R_DS(on) limits I²R loss to <2 W at peak 11.5 A, while 127 ns t_rr prevents voltage overshoot during rapid current reversal.

Use Scenario: Primary-side synchronous rectifier in isolated bidirectional DC-DC converter linking 12 V starter battery and 48 V Li-ion auxiliary battery.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; switches at 200 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 10.6 nC Q_g enables ZVS turn-on with minimal gate driver power; 175 °C rating sustains operation during prolonged boost-mode overload conditions.

Electric Power Steering (EPS) Motor Phase Leg

Onboard Charger (OBC) AC-DC Front-End

Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC motor in EPS system, subject to vibration, thermal cycling, and EMI constraints.

IC Role / Device Role / Timing Role: Low-side switch in motor phase leg; commutated at 8–20 kHz with active short-circuit protection.

Use Value: AEC-Q101 qualification ensures reliability across -40 to +150 °C ambient; 5 mJ E_AS withstands fault currents during short-circuit events without failure.

Use Scenario: PFC boost switch in 3.3 kW onboard charger converting 230 V AC to 400 V DC, operating continuously at 65 °C ambient.

IC Role / Device Role / Timing Role: Fast-switching boost transistor in continuous conduction mode (CCM); duty cycle varies from 20 % to 80 %.

Use Value: 250 V V_DS provides 1.5× margin over 400 V DC bus; 0.1443 Ω R_DS(on) @ 7.5 V enables gate drive from standard 12 V supply without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	200 V V_DS, 0.0017 Ω R_DS(on) @ 10 V, TO-263 package, AEC-Q101	Limited to ≤200 V systems; superior conduction loss but larger footprint and higher gate charge (45 nC)	Select for ultra-low-loss 12–48 V applications where board space permits TO-263 and gate drive capability supports higher Q_g.
IXTP120N25X3	250 V V_DS, 0.0125 Ω R_DS(on) @ 10 V, TO-220 package, no AEC-Q101	Higher R_DS(on) than SQD10950E_GE3 at same voltage; lacks automotive qualification and has slower t_rr (220 ns)	Use only in non-automotive industrial power supplies where cost and qualification are secondary to availability.

Compared with STL220N5LF8AG and IXTP120N25X3, the SQD10950E_GE3 offers balanced trade-offs: sufficient 250 V rating for 48 V+ systems, AEC-Q101 compliance for automotive use, TO-252 footprint for compact layouts, and optimized Q_g/R_DS(on) for 100–200 kHz switching - making it ideal for space-constrained, thermally demanding vehicle subsystems.

Availability

SQD10950E_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SQD10950E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD10950E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-reliability switching in engine control, ADAS, and electrified powertrain applications.

FAQ

What is the maximum continuous drain current rating for SQD10950E_GE3 at 125 °C case temperature?

The SQD10950E_GE3 supports 6.6 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C under full load. The SQD10950E_GE3 datasheet confirms this value on page 1 under "Continuous drain current".

Is SQD10950E_GE3 suitable for use in synchronous rectification circuits?

Yes, the SQD10950E_GE3 is well-suited for synchronous rectification due to its low R_DS(on) (0.162 Ω @ 10 V), fast body diode (t_rr = 127 ns typ), and low Q_gd/Q_gs ratio. Its 250 V rating supports secondary-side rectification in 48 V and higher-output isolated converters. The SQD10950E_GE3 body diode forward voltage is 0.9 V typ at 15 A, minimizing conduction loss when used as a freewheeling path before gate turn-on.

Does SQD10950E_GE3 require a gate resistor for safe operation?

A gate resistor is recommended for the SQD10950E_GE3 to control dV/dt and prevent oscillation, especially in high-di/dt applications. While the device's intrinsic gate resistance is 1.9–5.7 Ω, external series resistance (typically 5–22 Ω) improves EMI performance and reduces ringing during switching transitions. The SQD10950E_GE3 gate charge of 10.6 nC (typ) makes it compatible with standard gate drivers without excessive power dissipation in the resistor.

What is the avalanche energy rating for SQD10950E_GE3, and how is it validated?

The SQD10950E_GE3 is rated for 5 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, as confirmed in the Absolute Maximum Ratings table. This rating is validated per AEC-Q101 stress test requirements, and each unit undergoes 100 % unclamped inductive switching (UIS) screening. The SQD10950E_GE3 datasheet specifies that E_AS testing ensures robustness against inductive load turn-off transients common in motor and solenoid drive circuits.

Can SQD10950E_GE3 be used with 3.3 V microcontroller GPIOs for gate drive?

The SQD10950E_GE3 has a gate threshold voltage range of 2.5–3.5 V, so 3.3 V GPIO can achieve partial turn-on but will not fully enhance the channel. At V_GS = 3.3 V, R_DS(on) rises significantly above spec - the datasheet shows only 0.180 Ω at V_GS = 7.5 V and 0.162 Ω at 10 V. For reliable operation, the SQD10950E_GE3 requires a dedicated gate driver or level shifter to deliver ≥7.5 V to ensure low conduction loss and thermal stability.

SQD10950E_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 162mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 785 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD10950E_GE3 FAQ

1.How can I place an order for SQD10950E_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD10950E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD10950E_GE3 reliable?

The price and inventory of SQD10950E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD10950E_GE3 is usually 5 days.

3.What payment methods are accepted for SQD10950E_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD10950E_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD10950E_GE3?

SQD10950E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD10950E_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD10950E_GE3?

For technical support, including SQD10950E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD10950E_GE3 requirements.

6.How does Aetrix verify that SQD10950E_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD10950E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD10950E_GE3 meets industry standards.

7.What is the process for return or replacement of SQD10950E_GE3?

All SQD10950E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD10950E_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD10950E_GE3 part is unused and in its original packaging.

Return procedure for SQD10950E_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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