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Vishay Siliconix SQD15N06-42L_GE3
- Part No.:
- SQD15N06-42L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD15N06-42L_GE3.pdf
- Description:
- MOSFET N-CH 60V 15A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:1,570
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Product details
Overview
SQD15N06-42L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 15 A continuous drain current at 25 °C, and 0.042 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and automotive lighting drivers.
For engineers reviewing the SQD15N06-42L_GE3 datasheet, SQD15N06-42L_GE3 pinout, SQD15N06-42L_GE3 application, or SQD15N06-42L_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V (0.060 Ω), 100 % Rg and UIS tested reliability, TO-252 package thermal performance (RthJC = 4 °C/W), and avalanche energy rating of 16.2 mJ.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard logic-level controllers, while the 9.5 nC typical total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.
The device integrates a built-in body diode with 0.9–1.2 V forward voltage at 10 A and 29–60 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drives without external diode addition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching. |
| RDS(on) @ VGS = 10 V | 0.042 Ω - Confirmed at 10 A, enabling ≤ 4.2 W conduction loss at full rated current. |
| RDS(on) @ VGS = 4.5 V | 0.060 Ω - Validated at 10 A and 25 °C, ensuring reliable operation with 3.3 V or 5 V microcontroller gate drive. |
| ID Continuous @ TC = 25 °C | 15 A - Sustained current capability when mounted on 1"² FR4 PCB with 2 oz copper. |
| EAS | 16.2 mJ - Single-pulse avalanche energy rating, supporting inductive load switching without snubber circuits. |
| TJ Operating Range | −55 to +175 °C - Qualified for engine compartment and transmission control unit environments. |
| RthJC | 4 °C/W - Low junction-to-case thermal resistance enables direct heatsink mounting via drain-tab connection. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical grounding. Dimensions per Vishay document 64424: 6.07 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives gate drive signal; requires ≤ 2.5 Ω series resistance to damp ringing due to 1.2–5.4 Ω intrinsic gate resistance. |
| D (Drain) | Main power output / high-side switch node | Connected internally to exposed metal tab; must be soldered to large copper pour or heatsink for thermal management. |
| S (Source) | Power return / reference node | Serves as current return path and gate drive reference; forms source terminal of integrated body diode (anode). |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables lower RDS(on) per die area vs. planar MOSFETs, reducing conduction losses in space-constrained modules. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards. |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-critical for motor phase-leg reliability. |
| Low RthJC (4 °C/W) | Allows >90 % of heat to transfer directly from junction to heatsink, enabling higher power density than standard SO-8 or DFN packages. |
| Integrated body diode | Rated for 15 A continuous source current and 50 A pulsed current, eliminating need for external freewheeling diodes in half-bridge topologies. |
Applications
| Automotive Body Control Module (BCM) | 12 V DC-DC Buck Converter |
|---|---|
Use Scenario: Switching power distribution to door locks, mirrors, and interior lighting in modern BCMs. IC Role / Device Role / Timing Role: High-side load switch controlling 12 V supply rails with overcurrent and thermal shutdown coordination. Use Value: 0.042 Ω RDS(on) limits voltage drop to <0.63 V at 15 A, preserving system efficiency and reducing thermal derating in sealed enclosures. |
Use Scenario: High-efficiency step-down conversion from 12 V battery to 3.3 V/5 V for infotainment and ADAS sensors. IC Role / Device Role / Timing Role: Synchronous rectifier in buck topology, operating at 200–500 kHz PWM with low Qg (9.5 nC typical). Use Value: 0.060 Ω RDS(on) at 4.5 V gate drive ensures >92 % efficiency at 10 A output, even with MCU-based gate drivers. |
| Electric Power Steering (EPS) Motor Driver | Automotive LED Headlamp Driver |
Use Scenario: Half-bridge leg in 3-phase EPS motor inverter, handling bidirectional current up to 15 A peak. IC Role / Device Role / Timing Role: Low-side or high-side switching element with fast turn-on (5 ns delay) and 10 ns rise time for precise torque control. Use Value: 16.2 mJ EAS withstands inductive flyback during fault conditions, reducing need for external clamping components. |
Use Scenario: Constant-current dimming switch for high-brightness LED arrays in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: PWM-controlled current sink with integrated body diode conducting freewheel current during off-time. Use Value: 0.9–1.2 V VSD at 10 A minimizes power dissipation in diode conduction mode, improving thermal margin at 100 % duty cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL15DN6LF3 | Lower RDS(on) (0.035 Ω @ 10 V), but only rated to 150 °C TJ and not AEC-Q101 qualified. | Acceptable for industrial DC-DC converters, but not certified for automotive under-hood deployment. | Select STL15DN6LF3 only if AEC-Q101 compliance is not required and thermal margin allows 150 °C max junction. |
| IRFR3709ZPBF | Higher RDS(on) (0.055 Ω @ 10 V), TO-252 package, AEC-Q101 qualified, but no 4.5 V RDS(on) spec provided. | Suitable for 12 V load switching where gate drive is guaranteed ≥10 V, but less compatible with 3.3 V logic controllers. | Choose IRFR3709ZPBF when gate drive voltage is stable ≥10 V and AEC-Q101 certification is mandatory. |
Compared with STL15DN6LF3 and IRFR3709ZPBF, the SQD15N06-42L_GE3 uniquely balances AEC-Q101 qualification, 4.5 V drive capability, and 175 °C operation-making it the only option among the three validated for high-temperature EPS and turbocharger actuator drivers.
Availability
SQD15N06-42L_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQD15N06-42L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD15N06-42L_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding AEC-Q101 compliance and extended temperature operation.
FAQ
What is the maximum continuous drain current rating for SQD15N06-42L_GE3 at 125 °C case temperature?
The SQD15N06-42L_GE3 supports 10 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-temperature operation, and must be verified against actual board layout and heatsinking in the target application.
Is SQD15N06-42L_GE3 suitable for 4.5 V gate drive applications?
Yes, the SQD15N06-42L_GE3 is explicitly characterized for 4.5 V gate drive, with RDS(on) = 0.060 Ω at ID = 10 A and 25 °C. Its gate threshold voltage range (1.5–2.5 V) ensures strong enhancement-mode turn-on with 3.3 V or 5 V logic-level controllers commonly used in automotive ECUs.
Does SQD15N06-42L_GE3 have an integrated body diode, and what are its key ratings?
Yes, the SQD15N06-42L_GE3 includes a monolithic body diode with 15 A continuous source current rating, 50 A pulsed current capability, 0.9–1.2 V forward voltage at 10 A, and 29–60 ns reverse recovery time. These parameters enable reliable freewheeling in half-bridge and buck converter topologies without external diodes.
What is the thermal resistance from junction to case (RthJC) for SQD15N06-42L_GE3, and how does it impact heatsink design?
The SQD15N06-42L_GE3 has RthJC = 4 °C/W, measured from junction to the drain-connected tab. This low value means >90 % of heat flows directly through the tab to the heatsink, allowing compact thermal solutions-designers should ensure full-surface soldering of the tab to a thermally optimized copper pour or external heatsink.
How is SQD15N06-42L_GE3 qualified for automotive use, and what tests does it undergo?
The SQD15N06-42L_GE3 is AEC-Q101 qualified and 100 % tested for gate resistance (Rg) and unclamped inductive switching (UIS). Qualification includes temperature cycling, high-temperature reverse bias, and humidity testing per JESD22 standards-ensuring reliability in harsh automotive environments such as engine compartments and transmission control units.
SQD15N06-42L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 535 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 37W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD15N06-42L_GE3 FAQ
1.How can I place an order for SQD15N06-42L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD15N06-42L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD15N06-42L_GE3 reliable?
The price and inventory of SQD15N06-42L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD15N06-42L_GE3 is usually 5 days.
3.What payment methods are accepted for SQD15N06-42L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD15N06-42L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD15N06-42L_GE3?
SQD15N06-42L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD15N06-42L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD15N06-42L_GE3?
For technical support, including SQD15N06-42L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD15N06-42L_GE3 requirements.
6.How does Aetrix verify that SQD15N06-42L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD15N06-42L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD15N06-42L_GE3 meets industry standards.
7.What is the process for return or replacement of SQD15N06-42L_GE3?
All SQD15N06-42L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD15N06-42L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD15N06-42L_GE3 part is unused and in its original packaging.
Return procedure for SQD15N06-42L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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