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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD15N06-42L_T4GE3

Name: SQD15N06-42L_T4GE3
Brand: Vishay Siliconix
SKU: SQD15N06-42L_T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD15N06-42L_T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD15N06-42L_T4GE3.pdf

Description:: N-CHANNEL 60-V (D-S) 175C MOSFET

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Product details

Overview

SQD15N06-42L_T4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 15 A continuous drain current at 25 °C, and 0.042 Ω R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab - used in high-reliability DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQD15N06-42L_T4GE3 datasheet, SQD15N06-42L_T4GE3 pinout, SQD15N06-42L_T4GE3 application, or SQD15N06-42L_T4GE3 equivalent, key selection criteria include its 4 Ω junction-to-case thermal resistance, 100% R_g and UIS testing, gate charge of 9.5 nC (typ), and robust avalanche energy rating of 16.2 mJ - all critical for thermally constrained automotive power switching designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge distribution. Its 175 °C rated junction supports operation in under-hood environments without derating below 125 °C ambient.

The device integrates a co-packaged body diode with 1.2 V forward voltage at 10 A and 29 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and half-bridge topologies where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche onset; defines use in 48 V automotive systems and 24 V industrial rails.
R_DS(on) @ V_GS = 10 V	0.042 Ω - Confirmed at 10 A, 25 °C; enables ≤ 4.2 W conduction loss at full rated current.
Q_g	9.5 nC (typ) - Total gate charge determines driver strength requirement and switching transition time in PWM circuits.
E_AS	16.2 mJ - Single-pulse avalanche energy rating ensures survivability during inductive load turn-off transients.
R_thJC	4 °C/W - Junction-to-case thermal resistance enables direct heatsinking via drain-tab mounting for thermal management.
I_D (cont) @ T_C = 125 °C	10 A - Derated current capability at high case temperature confirms usable output in hot chassis locations.
V_GS(th)	1.5–2.5 V - Gate threshold range allows reliable turn-on with 3.3 V or 5 V logic-level drivers without level-shifting.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected metal tab for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; requires <2.5 Ω series resistance to damp ringing due to 2.5 Ω typical gate resistance.
D (Drain)	High-side power node	Internally connected to exposed tab; must be soldered to ≥1"² FR4 copper area for thermal performance per datasheet test condition.
S (Source)	Power return / reference node	Provides return path for load current and gate drive loop; low-inductance layout critical for EMI control in switching applications.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements including HTOL, TC, HTRB, and UHAST - supports ASIL-B system integration.
100% R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from parametric drift or avalanche weakness.
TrenchFET® architecture	Enables lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs - improves efficiency in high-frequency (>100 kHz) DC-DC converters.
Drain-connected tab	Reduces thermal impedance path to PCB by eliminating interface layers - achieves 4 °C/W R_thJC with minimal heatsink footprint.
Body diode with t_rr = 29 ns	Fast, soft-recovery intrinsic diode supports synchronous rectification and reduces snubber losses in flyback and LLC resonant converters.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-side switch driving solenoid-based fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Power switch controlling 12 V/5 A injector coil with 1 ms pulse width and 10 Hz repetition rate. Use Value: 175 °C junction rating ensures reliability near hot engine block; 16.2 mJ E_AS absorbs inductive kickback without external clamp diode.	Use Scenario: Low-side PWM switch regulating brushed DC blower motor speed in climate control modules. IC Role / Device Role / Timing Role: Ground-referenced switching element operating at 20 kHz PWM with 15 A peak current. Use Value: 0.042 Ω R_DS(on) limits conduction loss to <1 W at full load; TO-252 thermal design supports continuous duty in confined dash cavity.
48 V Mild Hybrid DC-DC Converter	Commercial Vehicle LED Headlamp Driver
Use Scenario: Synchronous rectifier in secondary side of isolated bidirectional DC-DC converter linking 48 V and 12 V buses. IC Role / Device Role / Timing Role: Low-side synchronous rectifier conducting up to 15 A with body diode freewheeling during dead time. Use Value: 29 ns t_rr minimizes reverse recovery loss; 0.060 Ω R_DS(on) @ 4.5 V enables direct drive from 5 V controller outputs.	Use Scenario: Constant-current switch regulating high-brightness LED strings in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: Precision current sink modulating 3 A LED load with 100 Hz dimming frequency and overtemperature shutdown. Use Value: AEC-Q101 qualification ensures compliance with automotive lighting safety standards; 100% UIS screening prevents failure during load dump events.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-side switch driving solenoid-based fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Power switch controlling 12 V/5 A injector coil with 1 ms pulse width and 10 Hz repetition rate.

Use Value: 175 °C junction rating ensures reliability near hot engine block; 16.2 mJ E_AS absorbs inductive kickback without external clamp diode.

Use Scenario: Low-side PWM switch regulating brushed DC blower motor speed in climate control modules.

IC Role / Device Role / Timing Role: Ground-referenced switching element operating at 20 kHz PWM with 15 A peak current.

Use Value: 0.042 Ω R_DS(on) limits conduction loss to <1 W at full load; TO-252 thermal design supports continuous duty in confined dash cavity.

48 V Mild Hybrid DC-DC Converter

Commercial Vehicle LED Headlamp Driver

Use Scenario: Synchronous rectifier in secondary side of isolated bidirectional DC-DC converter linking 48 V and 12 V buses.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier conducting up to 15 A with body diode freewheeling during dead time.

Use Value: 29 ns t_rr minimizes reverse recovery loss; 0.060 Ω R_DS(on) @ 4.5 V enables direct drive from 5 V controller outputs.

Use Scenario: Constant-current switch regulating high-brightness LED strings in adaptive front lighting systems (AFS).

IC Role / Device Role / Timing Role: Precision current sink modulating 3 A LED load with 100 Hz dimming frequency and overtemperature shutdown.

Use Value: AEC-Q101 qualification ensures compliance with automotive lighting safety standards; 100% UIS screening prevents failure during load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL15DN6LF3	Lower R_DS(on) (0.035 Ω @ 10 V) but higher Q_g (14 nC); same TO-252 package and AEC-Q101 grade.	Better conduction efficiency at high current; slower switching due to higher gate charge - suited for <100 kHz applications.	Select STL15DN6LF3 when minimizing I²R loss dominates over switching loss; verify gate driver can source/sink 1.4× more peak current.
IRF7470PBF	Higher R_DS(on) (0.055 Ω @ 10 V), no AEC-Q101 qualification, TO-252 package, 150 °C max T_J.	Limited to non-safety-critical industrial or commercial use; not validated for automotive temperature cycling or humidity tests.	Choose IRF7470PBF only for cost-sensitive non-automotive designs where 175 °C operation and automotive qualification are unnecessary.

Compared with STL15DN6LF3 and IRF7470PBF, SQD15N06-42L_T4GE3 delivers optimal balance of low R_DS(on), moderate Q_g, full AEC-Q101 compliance, and 175 °C capability - making it the preferred choice for thermally demanding, safety-relevant automotive power stages requiring long-term reliability without derating.

Availability

SQD15N06-42L_T4GE3 is available at Aetrix Electronics and suitable for engine control units, HVAC motor drives, and 48 V mild hybrid converters requiring stable component supply across extended automotive production lifecycles.

Supply support for SQD15N06-42L_T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD15N06-42L_T4GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and powertrain electronics.

FAQ

What is the maximum junction temperature rating for SQD15N06-42L_T4GE3?

The SQD15N06-42L_T4GE3 has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress testing. This rating allows deployment in under-hood automotive environments where ambient temperatures exceed 125 °C, provided thermal design maintains T_J ≤ 175 °C using the specified 4 °C/W R_thJC path and adequate PCB copper area.

Is SQD15N06-42L_T4GE3 qualified to AEC-Q101 standards?

Yes, SQD15N06-42L_T4GE3 is fully AEC-Q101 qualified, with test reports covering high-temperature operating life (HTOL), temperature cycling (TC), high-temperature reverse bias (HTRB), and unbiased highly accelerated stress test (UHAST). This qualification confirms suitability for automotive power electronics where functional safety and long-term reliability are mandatory.

What is the gate threshold voltage range for SQD15N06-42L_T4GE3?

The gate threshold voltage (V_GS(th)) for SQD15N06-42L_T4GE3 is specified as 1.5 V to 2.5 V at I_D = 250 µA. This range ensures consistent turn-on behavior with standard 3.3 V or 5 V microcontroller GPIOs, and supports robust operation across temperature extremes from −55 °C to +175 °C without requiring external gate boosting circuitry.

Does SQD15N06-42L_T4GE3 include an integrated body diode?

Yes, SQD15N06-42L_T4GE3 incorporates a monolithic body diode with forward voltage of 0.9–1.2 V at I_F = 10 A and reverse recovery time of 29 ns (typ). This diode is characterized for freewheeling and synchronous rectification roles, and its soft recovery behavior helps reduce EMI in high-frequency switching applications such as DC-DC converters.

What is the total gate charge (Q_g) specification for SQD15N06-42L_T4GE3?

The total gate charge (Q_g) for SQD15N06-42L_T4GE3 is 9.5 nC (typical) at V_GS = 10 V, V_DS = 30 V, and I_D = 15 A. This value directly impacts switching speed and driver power requirements - for example, driving Q_g at 100 kHz with 10 V swing demands average gate current of ~0.95 mA, guiding selection of gate driver ICs or discrete transistor buffers.

SQD15N06-42L_T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 535 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD15N06-42L_T4GE3 FAQ

1.How can I place an order for SQD15N06-42L_T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD15N06-42L_T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD15N06-42L_T4GE3 reliable?

The price and inventory of SQD15N06-42L_T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD15N06-42L_T4GE3 is usually 5 days.

3.What payment methods are accepted for SQD15N06-42L_T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD15N06-42L_T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD15N06-42L_T4GE3?

SQD15N06-42L_T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD15N06-42L_T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD15N06-42L_T4GE3?

For technical support, including SQD15N06-42L_T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD15N06-42L_T4GE3 requirements.

6.How does Aetrix verify that SQD15N06-42L_T4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD15N06-42L_T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD15N06-42L_T4GE3 meets industry standards.

7.What is the process for return or replacement of SQD15N06-42L_T4GE3?

All SQD15N06-42L_T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD15N06-42L_T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD15N06-42L_T4GE3 part is unused and in its original packaging.

Return procedure for SQD15N06-42L_T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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