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Vishay Siliconix SQD23N06-31L_GE3
- Part No.:
- SQD23N06-31L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD23N06-31L_GE3.pdf
- Description:
- MOSFET N-CH 60V 23A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:3,440
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Product details
Overview
SQD23N06-31L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 23 A continuous drain current at 25 °C, and 0.031 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQD23N06-31L_GE3 datasheet, SQD23N06-31L_GE3 pinout, SQD23N06-31L_GE3 application, or SQD23N06-31L_GE3 equivalent, key selection criteria include its TO-252 package thermal performance (RthJC = 4 °C/W), 100 % Rg and UIS testing, and verified 4.5 V gate drive capability (RDS(on) = 0.045 Ω).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-reliability automotive power stages. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V microcontroller logic, while the integrated body diode supports synchronous rectification and freewheeling in buck converters.
The device features a drain-connected tab for direct thermal coupling to PCB copper, and its dynamic parameters-including 16 nC total gate charge, 6 ns turn-on delay, and 14 ns turn-off delay-are characterized at VDS = 30 V, ID = 23 A, ensuring predictable timing in PWM-driven systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching |
| RDS(on) @ 10 V | 0.031 Ω - Enables ≤ 16 W conduction loss at 23 A, suitable for high-current motor drivers |
| RDS(on) @ 4.5 V | 0.045 Ω - Ensures robust operation with standard 5 V logic-level gate drivers without level shifting |
| ID (continuous) | 23 A @ TC = 25 °C - Supports sustained current delivery in engine control modules and HVAC blowers |
| TJ range | −55 to +175 °C - Qualified for under-hood environments per AEC-Q101 stress test requirements |
| RthJC | 4 °C/W - Allows efficient heat transfer from junction to heatsink via drain-tab mounting |
| Qg | 16 nC typical - Reduces gate driver power demand and switching losses in 100–500 kHz DC-DC stages |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically and thermally connected to exposed metal tab; must be soldered to ≥1"² 2 oz. copper area for rated power dissipation |
| Gate (G) | Control input for channel conduction | High-impedance MOS gate requiring <100 nA leakage current; sensitive to ESD; routed away from noisy traces |
| Source (S) | Reference node for gate drive and current return | Common return path for load current and gate drive loop; critical for minimizing switching noise in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and UIS stress tests-no additional qualification needed for Tier 1 designs |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-reduces field failure risk in motor fault conditions |
| TrenchFET® architecture | Optimized cell layout delivers 25 % lower RDS(on) × Qg figure-of-merit vs. planar MOSFETs at same voltage rating |
| Drain-connected tab | Enables direct thermal interface to PCB ground plane or external heatsink-eliminates need for insulated mounting hardware |
| Low VGS(th) variation | 1.5–2.5 V range ensures stable turn-on across temperature and process corners-simplifies gate drive design margining |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-side switching of 12 V fuel injectors with peak currents up to 18 A and PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Power switch controlling injector coil energization and de-energization; handles repetitive UIS events during coil flyback. Use Value: 0.031 Ω RDS(on) minimizes I²R heating during extended duty cycles; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime. | Use Scenario: Low-side drive of 24 V blower motors drawing 15–20 A continuous current in cabin climate systems. IC Role / Device Role / Timing Role: Main power stage switch in half-bridge configuration; conducts full motor current during on-state and blocks reverse EMF during off-state. Use Value: 175 °C max junction temperature allows operation in confined under-dash enclosures; TO-252 thermal resistance supports passive cooling. |
| 48 V Mild Hybrid DC-DC Converter Primary Switch | Automotive LED Headlamp Matrix Driver |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bidirectional buck-boost converters operating at 300 kHz. IC Role / Device Role / Timing Role: High-frequency power switch with low Qg (16 nC) and fast switching (6 ns td(on)) to minimize transition losses. Use Value: 0.045 Ω RDS(on) at 4.5 V gate drive enables direct MCU control without gate driver IC, reducing BOM count and layout area. | Use Scenario: Individual channel switch for adaptive LED headlamps requiring precise current regulation and rapid on/off sequencing. IC Role / Device Role / Timing Role: Low-loss, high-speed current path switch enabling pixel-level dimming and dynamic beam shaping. Use Value: Fast fall time (3 ns) and low Crss (55 pF typical) suppress EMI during high-speed PWM dimming; 100 % UIS tested withstands inductive kickback from LED string inductance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6LF7AG | RDS(on) = 0.022 Ω @ 10 V; TO-263 package; higher capacitance (Ciss = 1200 pF) | Better conduction loss but slower switching; requires larger PCB footprint and heatsinking | Prefer when thermal budget is tight but switching frequency ≤ 100 kHz |
| IRFZ44NPBF | RDS(on) = 0.028 Ω @ 10 V; TO-220 package; not AEC-Q101 qualified; RthJC = 1.5 °C/W | Higher power density but no automotive qualification; unsuitable for safety-critical systems | Select only for non-automotive industrial or consumer applications with manual heatsink mounting |
Compared with STL220N6LF7AG and IRFZ44NPBF, the SQD23N06-31L_GE3 offers balanced trade-offs: AEC-Q101 compliance, TO-252 mountability, and verified 4.5 V drive-making it optimal for space-constrained, high-reliability automotive power stages where qualification and board-level thermal management are mandatory.
Availability
SQD23N06-31L_GE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC motor drives, and 48 V mild hybrid power conversion requiring stable component supply across multi-year production programs.
Supply support for SQD23N06-31L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD23N06-31L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine compartments and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQD23N06-31L_GE3 at 125 °C case temperature?
The SQD23N06-31L_GE3 supports 13 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under high ambient conditions and must be validated against actual PCB layout and airflow in the final application. The SQD23N06-31L_GE3 maintains safe operation within its SOA curve up to this current when mounted on a 1"² FR4 PCB with 2 oz. copper.
Is SQD23N06-31L_GE3 suitable for 4.5 V gate drive applications?
Yes, the SQD23N06-31L_GE3 is fully characterized at VGS = 4.5 V, delivering 0.045 Ω RDS(on) at ID = 10 A. Its gate threshold voltage range (1.5–2.5 V) ensures reliable turn-on with standard 5 V logic outputs, eliminating the need for gate driver ICs in many automotive body control modules. The SQD23N06-31L_GE3 has been 100 % Rg tested to guarantee consistent switching behavior across production lots.
Does SQD23N06-31L_GE3 have an integrated body diode, and what is its forward voltage?
Yes, the SQD23N06-31L_GE3 includes an inherent parasitic body diode with VSD = 0.9–1.5 V at IF = 15 A and VGS = 0 V. This diode supports freewheeling in inductive loads like fuel injectors and blower motors. Its performance is documented in the "Source-Drain Diode Ratings" section of the datasheet, and the SQD23N06-31L_GE3 is 100 % UIS tested to ensure robustness during reverse recovery events.
What is the thermal resistance from junction to case (RthJC) for SQD23N06-31L_GE3?
The SQD23N06-31L_GE3 has a junction-to-case thermal resistance of 4 °C/W, measured from die junction to the drain tab surface. This value assumes proper soldering of the exposed drain pad to a minimum 1"² copper area on FR4 PCB. The low RthJC enables efficient heat transfer to external heatsinks or chassis grounds, making the SQD23N06-31L_GE3 suitable for thermally demanding automotive locations where active cooling is impractical.
How does AEC-Q101 qualification impact the use of SQD23N06-31L_GE3 in automotive designs?
AEC-Q101 qualification confirms that the SQD23N06-31L_GE3 has passed accelerated stress tests-including temperature cycling, high-temperature reverse bias, and unclamped inductive switching-required for automotive power semiconductors. This eliminates the need for system-level requalification by Tier 1 suppliers and shortens time-to-market for ECU, ADAS, and electrification modules. The SQD23N06-31L_GE3 is designated for automotive use per Vishay's material categorization per doc#99912.
SQD23N06-31L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 845 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 37W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD23N06-31L_GE3 FAQ
1.How can I place an order for SQD23N06-31L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD23N06-31L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD23N06-31L_GE3 reliable?
The price and inventory of SQD23N06-31L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD23N06-31L_GE3 is usually 5 days.
3.What payment methods are accepted for SQD23N06-31L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD23N06-31L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD23N06-31L_GE3?
SQD23N06-31L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD23N06-31L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD23N06-31L_GE3?
For technical support, including SQD23N06-31L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD23N06-31L_GE3 requirements.
6.How does Aetrix verify that SQD23N06-31L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD23N06-31L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD23N06-31L_GE3 meets industry standards.
7.What is the process for return or replacement of SQD23N06-31L_GE3?
All SQD23N06-31L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD23N06-31L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD23N06-31L_GE3 part is unused and in its original packaging.
Return procedure for SQD23N06-31L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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