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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD23N06-31L_T4GE3

Name: SQD23N06-31L_T4GE3
Brand: Vishay Siliconix
SKU: SQD23N06-31L_T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD23N06-31L_T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD23N06-31L_T4GE3.pdf

Description:: MOSFET N-CH 60V 23A TO252AA

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Product details

Overview

SQD23N06-31L_T4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V (D–S), 23 A continuous drain current at 25 °C, and 0.031 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified, designed for high-reliability DC motor control, LED lighting drivers, and body electronics in passenger vehicles.

For engineers reviewing the SQD23N06-31L_T4GE3 datasheet, SQD23N06-31L_T4GE3 pinout, SQD23N06-31L_T4GE3 application, or SQD23N06-31L_T4GE3 equivalent, key selection criteria include its 4 Ω junction-to-case thermal resistance, 100 % R_g and UIS tested reliability, TO-252 package with drain-connected tab, and verified 175 °C operation under automotive thermal cycling stress.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with 16 nC total gate charge (V_GS = 10 V, V_DS = 30 V). Its gate threshold voltage is tightly specified at 1.5–2.5 V, enabling robust drive compatibility with 3.3 V and 5 V microcontrollers in automotive subsystems.

The device integrates a source-drain diode with 15 A forward current capability and 0.9–1.5 V forward voltage at I_F = 15 A, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive systems and 24 V battery rails with margin.
R_DS(on) @ V_GS = 10 V	0.031 Ω - Enables ≤ 16 W conduction loss at 23 A, critical for thermally constrained PCB layouts.
I_D (continuous)	23 A @ T_C = 25 °C - Supports high-current loads such as radiator fans and seat actuators without forced cooling.
R_thJC	4 °C/W - Allows direct thermal coupling to heatsink or copper pour, reducing junction temperature rise by >50 % vs. R_thJA = 50 °C/W.
Q_g	16 nC (typ) - Minimizes gate drive power and enables efficient PWM switching up to 200 kHz in DC/DC converters.
AEC-Q101 qualified	Verified for automotive use per stress test requirements including HTOL, TC, and UHAST - no additional qualification needed for Tier 1 BOMs.
E_AS	20 mJ - Withstands inductive energy spikes from solenoid or motor turn-off without avalanche failure.

Pinout & Package

TO-252AA (DPAK) surface-mount package with exposed drain pad on underside; mechanical dimensions per Vishay document 64424 (Rev. 12-May-2025); drain connected to tab for low-inductance thermal and electrical path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives logic-level gate drive; 1.4 Ω typical gate resistance limits ringing and simplifies RC snubber design.
D (Drain)	High-side switch node	Connected internally to metal tab; must be soldered to large copper area or heatsink for thermal management and EMI reduction.
S (Source)	Power return / reference	Serves as local ground reference for gate driver; requires low-impedance trace to minimize V_GS error during high di/dt events.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 25 % lower R_DS(on) than planar MOSFETs of same die size, improving power density in space-constrained modules.
100 % R_g and UIS tested	Ensures gate robustness against ESD and inductive switching stress - eliminates field failures from untested parametric outliers.
Drain-connected tab	Reduces thermal resistance by 80 % vs. plastic-only packages; enables <15 °C junction rise at 12 W dissipation on 1"² FR4 PCB.
175 °C maximum T_J	Supports operation in engine bay or under-hood locations where ambient exceeds 125 °C without derating or thermal shutdown.
Low C_iss (674 pF typ)	Reduces capacitive loading on gate drivers, allowing use of low-power MCUs (e.g., S32K144) without external buffer stages.

Applications

Automotive HVAC Blower Control	LED Headlamp Dimming Driver
Use Scenario: PWM-controlled 24 V DC blower motor delivering variable airflow in cabin climate systems. IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge configuration, driven by automotive MCU with 5 V logic output. Use Value: 0.031 Ω R_DS(on) limits conduction loss to <1.8 W at 23 A, enabling compact heatsink-free design in tight dashboard space.	Use Scenario: Constant-current dimming of 12–48 V LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Low-side switch in buck converter topology, synchronized to 100–500 kHz controller clock. Use Value: 16 nC Q_g and 8 ns rise time enable precise 1 % duty cycle resolution at 200 kHz, supporting smooth 0–100 % brightness control.
Body Control Module (BCM) Load Switch	Electric Power Steering (EPS) Auxiliary Power Stage
Use Scenario: Solid-state replacement for electromechanical relays controlling door locks, windows, and mirrors. IC Role / Device Role / Timing Role: Single-pole single-throw (SPST) load switch with integrated diagnostics via V_DS sensing. Use Value: AEC-Q101 qualification and 20 mJ E_AS ensure reliable operation across 100,000+ cycles with inductive load transients.	Use Scenario: Secondary 12 V power stage supplying torque sensor, CAN transceiver, and MCU in EPS subassembly. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in isolated flyback or forward converter. Use Value: Source-drain diode V_SD = 0.9 V (typ) at 15 A reduces conduction loss by 35 % vs. Schottky diode, improving system efficiency by 1.2 % at full load.

Automotive HVAC Blower Control

LED Headlamp Dimming Driver

Use Scenario: PWM-controlled 24 V DC blower motor delivering variable airflow in cabin climate systems.

IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge configuration, driven by automotive MCU with 5 V logic output.

Use Value: 0.031 Ω R_DS(on) limits conduction loss to <1.8 W at 23 A, enabling compact heatsink-free design in tight dashboard space.

Use Scenario: Constant-current dimming of 12–48 V LED arrays in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Low-side switch in buck converter topology, synchronized to 100–500 kHz controller clock.

Use Value: 16 nC Q_g and 8 ns rise time enable precise 1 % duty cycle resolution at 200 kHz, supporting smooth 0–100 % brightness control.

Body Control Module (BCM) Load Switch

Electric Power Steering (EPS) Auxiliary Power Stage

Use Scenario: Solid-state replacement for electromechanical relays controlling door locks, windows, and mirrors.

IC Role / Device Role / Timing Role: Single-pole single-throw (SPST) load switch with integrated diagnostics via V_DS sensing.

Use Value: AEC-Q101 qualification and 20 mJ E_AS ensure reliable operation across 100,000+ cycles with inductive load transients.

Use Scenario: Secondary 12 V power stage supplying torque sensor, CAN transceiver, and MCU in EPS subassembly.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in isolated flyback or forward converter.

Use Value: Source-drain diode V_SD = 0.9 V (typ) at 15 A reduces conduction loss by 35 % vs. Schottky diode, improving system efficiency by 1.2 % at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF6AG	Lower R_DS(on) (2.2 mΩ @ 10 V), but only 150 °C T_J max and no AEC-Q101 documentation in public datasheet.	Not approved for under-hood use above 150 °C; limited to cabin modules with active cooling.	Select when higher current density is required and junction temperature remains below 150 °C.
IRF3205PBF	Higher R_DS(on) (5.5 mΩ @ 10 V), non-automotive grade, 175 °C rating not AEC-Q101 validated.	Lacks automotive qualification; unsuitable for production vehicle ECUs without full requalification.	Acceptable only for prototyping or non-safety-critical aftermarket modules with full thermal validation.

Compared with STL220N6LF6AG and IRF3205PBF, the SQD23N06-31L_T4GE3 uniquely combines AEC-Q101 certification, 175 °C operation, and 0.031 Ω R_DS(on) in TO-252 - making it the only drop-in qualified solution for high-temperature body electronics without layout or thermal redesign.

Availability

SQD23N06-31L_T4GE3 is available at Aetrix Electronics and suitable for automotive HVAC systems, LED lighting drivers, and body control modules requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQD23N06-31L_T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD23N06-31L_T4GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for under-hood and chassis-mounted ECUs demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum continuous drain current rating for SQD23N06-31L_T4GE3 at 125 °C case temperature?

The SQD23N06-31L_T4GE3 supports 13 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C under full load.

Is SQD23N06-31L_T4GE3 qualified to AEC-Q101, and what does that cover?

Yes, SQD23N06-31L_T4GE3 is AEC-Q101 qualified per the Vishay datasheet revision C (10-Aug-15), covering stress tests including high-temperature operating life (HTOL), temperature cycling (TC), and unbiased highly accelerated stress test (UHAST). The qualification applies to the full production lot and confirms suitability for automotive electronic control units without additional component-level qualification.

What is the gate threshold voltage range for SQD23N06-31L_T4GE3, and how does it affect drive compatibility?

The gate threshold voltage (V_GS(th)) for SQD23N06-31L_T4GE3 is 1.5–2.5 V at I_D = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic outputs, while maintaining noise immunity in electrically noisy automotive environments. At V_GS = 4.5 V, the device delivers 0.045 Ω R_DS(on), supporting robust operation even with marginal gate drive margins.

Can SQD23N06-31L_T4GE3 be used in synchronous rectification applications?

Yes, SQD23N06-31L_T4GE3 includes an integrated source-drain diode with 15 A forward current rating and 0.9 V typical forward voltage at I_F = 15 A. Its low V_SD and fast recovery characteristics make it suitable for synchronous rectification in buck and flyback converters, especially where board space prohibits discrete Schottky diodes.

What is the thermal resistance from junction to case (R_thJC) for SQD23N06-31L_T4GE3, and why is it critical?

The junction-to-case thermal resistance (R_thJC) for SQD23N06-31L_T4GE3 is 4 °C/W, measured from die to the drain-connected metal tab. This low value is critical because it enables direct heat transfer to external heatsinks or internal PCB copper pours - reducing junction temperature rise by over 50 % compared to relying on junction-to-ambient paths alone, especially in sealed enclosures.

SQD23N06-31L_T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 845 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD23N06-31L_T4GE3 FAQ

1.How can I place an order for SQD23N06-31L_T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD23N06-31L_T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD23N06-31L_T4GE3 reliable?

The price and inventory of SQD23N06-31L_T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD23N06-31L_T4GE3 is usually 5 days.

3.What payment methods are accepted for SQD23N06-31L_T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD23N06-31L_T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD23N06-31L_T4GE3?

SQD23N06-31L_T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD23N06-31L_T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD23N06-31L_T4GE3?

For technical support, including SQD23N06-31L_T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD23N06-31L_T4GE3 requirements.

6.How does Aetrix verify that SQD23N06-31L_T4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD23N06-31L_T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD23N06-31L_T4GE3 meets industry standards.

7.What is the process for return or replacement of SQD23N06-31L_T4GE3?

All SQD23N06-31L_T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD23N06-31L_T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD23N06-31L_T4GE3 part is unused and in its original packaging.

Return procedure for SQD23N06-31L_T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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