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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD25N06-22L_GE3

Name: SQD25N06-22L_GE3
Brand: Vishay Siliconix
SKU: SQD25N06-22L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD25N06-22L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD25N06-22L_GE3.pdf

Description:: MOSFET N-CH 60V 25A TO252

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Product details

Overview

SQD25N06-22L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 25 A continuous drain current at 25 °C, and 0.022 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-252 (DPAK) package with drain-connected tab, targeting high-reliability motor control and DC-DC converter stages in under-hood automotive systems.

For engineers reviewing the SQD25N06-22L_GE3 datasheet, SQD25N06-22L_GE3 pinout, SQD25N06-22L_GE3 application, or SQD25N06-22L_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on) at 4.5 V (0.033 Ω), 100% R_g and UIS tested performance, and thermal resistance of 2.4 °C/W (junction-to-case), critical for thermally constrained engine-control modules.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching with Q_g = 33 nC (typ.) and t_f = 6–9 ns. Its gate threshold voltage (1.5–2.5 V) enables robust 3.3 V and 5 V logic-level drive compatibility while maintaining tight V_GS(th) distribution across temperature.

The device integrates a co-packaged body diode with V_SD = 0.9–1.5 V at I_F = 25 A and supports repetitive avalanche energy (E_AS = 28 mJ), making it suitable for inductive load switching where freewheeling and transient clamping are required without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and motor phase switching
R_DS(on) @ V_GS = 10 V	0.022 Ω - Enables <1.4 W conduction loss at 25 A, reducing heatsink requirements in space-constrained ECUs
R_DS(on) @ V_GS = 4.5 V	0.033 Ω - Ensures full enhancement with standard 5 V microcontroller GPIOs or automotive PMIC gate drivers
I_D (continuous, T_C = 25 °C)	25 A - Supports high-current loads such as radiator fan drivers and fuel pump controllers
Junction Temp Range	−55 to +175 °C - Qualified for under-hood operation including transmission control units and turbocharger actuators
R_thJC	2.4 °C/W - Allows direct thermal coupling to PCB copper pour or heatsink for efficient power dissipation
Q_g	33 nC (typ.) - Enables fast turn-on with low gate drive power, supporting PWM frequencies >100 kHz in DC-DC converters

Pinout & Package

TO-252 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. Dimensions per Vishay document 64424: 6.07 mm × 6.54 mm × 2.28 mm (L × W × H), 2.28 mm lead pitch (e), 4.56 mm center-to-center (e1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	Control terminal; accepts 0–20 V gate drive; low input capacitance (C_iss = 1580 pF typ.) reduces driver loading
Pin 2 (Center)	Drain (D)	Main power output; internally connected to exposed metal tab for low-inductance, high-current path and thermal conduction
Pin 3 (Right)	Source (S)	Power return/reference node; forms common source configuration with gate drive referenced to this node

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness-critical for motor fault tolerance
TrenchFET® technology	Delivers lower R_DS(on) × area than planar MOSFETs, enabling smaller PCB footprint for same current rating
Low R_thJC (2.4 °C/W)	Enables >20 W power dissipation with ≤50 °C rise above case, supporting compact thermal design in sealed enclosures
Body diode with soft recovery	V_SD = 0.9 V (typ.) at 25 A and low reverse recovery charge (Q_rr not specified but implied by low Crss = 130–163 pF) reduces EMI in flyback topologies

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed, pulse-width modulated switching of 12 V fuel injectors with peak currents up to 20 A and frequent transients. IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration, handling inductive kickback and hot-switching events. Use Value: AEC-Q101 qualification and 28 mJ single-pulse avalanche energy ensure reliable operation over 10+ year vehicle lifetimes despite repeated injector coil collapse events.	Use Scenario: Variable-speed control of 24 V blower motors in climate control systems using PWM at 20–50 kHz. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode providing freewheeling path during PWM off-time. Use Value: 0.033 Ω R_DS(on) at 4.5 V enables direct drive from automotive MCU GPIOs, eliminating level-shifter components and reducing BOM count.
12 V–48 V DC-DC Converter Primary Switch	Electric Power Steering (EPS) Phase Leg
Use Scenario: Synchronous buck converter stage stepping down 48 V mild-hybrid bus to 12 V auxiliary supply with >95 % efficiency target. IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 200–500 kHz with tight gate charge (Q_g = 33 nC) for minimal driver loss. Use Value: Low C_iss/C_oss ratio (1580/305 pF) and fast t_r/t_f (10–15 ns / 6–9 ns) reduce switching losses and improve light-load efficiency.	Use Scenario: One leg of three-phase inverter driving 3-phase brushless motor in EPS rack-and-pinion assembly. IC Role / Device Role / Timing Role: Half-bridge low-side switch with high dV/dt immunity and 175 °C junction rating for sustained torque delivery during parking maneuvers. Use Value: R_thJC = 2.4 °C/W allows direct mounting to aluminum housing, achieving stable thermal performance without discrete heatsinks in confined EPS module space.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, pulse-width modulated switching of 12 V fuel injectors with peak currents up to 20 A and frequent transients.

IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration, handling inductive kickback and hot-switching events.

Use Value: AEC-Q101 qualification and 28 mJ single-pulse avalanche energy ensure reliable operation over 10+ year vehicle lifetimes despite repeated injector coil collapse events.

Use Scenario: Variable-speed control of 24 V blower motors in climate control systems using PWM at 20–50 kHz.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode providing freewheeling path during PWM off-time.

Use Value: 0.033 Ω R_DS(on) at 4.5 V enables direct drive from automotive MCU GPIOs, eliminating level-shifter components and reducing BOM count.

12 V–48 V DC-DC Converter Primary Switch

Electric Power Steering (EPS) Phase Leg

Use Scenario: Synchronous buck converter stage stepping down 48 V mild-hybrid bus to 12 V auxiliary supply with >95 % efficiency target.

IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 200–500 kHz with tight gate charge (Q_g = 33 nC) for minimal driver loss.

Use Value: Low C_iss/C_oss ratio (1580/305 pF) and fast t_r/t_f (10–15 ns / 6–9 ns) reduce switching losses and improve light-load efficiency.

Use Scenario: One leg of three-phase inverter driving 3-phase brushless motor in EPS rack-and-pinion assembly.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with high dV/dt immunity and 175 °C junction rating for sustained torque delivery during parking maneuvers.

Use Value: R_thJC = 2.4 °C/W allows direct mounting to aluminum housing, achieving stable thermal performance without discrete heatsinks in confined EPS module space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF8AG	Lower R_DS(on) (0.018 Ω @ 10 V), higher Q_g (42 nC), same TO-252 package, AEC-Q101 qualified	Better conduction loss but slower switching; suited for lower-frequency, high-current applications like seat heaters	Select STL220N6LF8AG when minimizing steady-state loss outweighs switching speed requirements
IRFZ44NPBF	Non-automotive grade, R_DS(on) = 0.028 Ω @ 10 V, no AEC-Q101, higher R_thJA (62 °C/W), TO-220 package	Lacks automotive reliability validation and thermal performance; limited to non-safety-critical cabin modules	Use IRFZ44NPBF only for prototyping or cost-sensitive non-automotive industrial controls

Compared with STL220N6LF8AG and IRFZ44NPBF, the SQD25N06-22L_GE3 delivers optimal balance of low R_DS(on), fast switching, AEC-Q101 compliance, and TO-252 thermal performance-making it the preferred choice for production-grade engine, chassis, and safety-related systems requiring long-term reliability.

Availability

SQD25N06-22L_GE3 is available at Aetrix Electronics and suitable for automotive engine management, electric power steering, and HVAC blower motor control requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQD25N06-22L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for automotive and industrial markets.

The SQD25N06-22L_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for demanding under-hood applications requiring AEC-Q101 qualification, extended temperature operation, and robust avalanche capability.

FAQ

What is the maximum continuous drain current rating for SQD25N06-22L_GE3 at 125 °C case temperature?

The SQD25N06-22L_GE3 supports 20 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation in high-ambient environments such as engine compartments. The SQD25N06-22L_GE3 maintains stable R_DS(on) up to 175 °C junction temperature, enabling reliable use in thermally aggressive automotive locations.

Is SQD25N06-22L_GE3 suitable for 4.5 V gate drive applications?

Yes, the SQD25N06-22L_GE3 is fully characterized at V_GS = 4.5 V, delivering R_DS(on) = 0.033 Ω (max) at I_D = 20 A and 25 °C. Its gate threshold voltage range (1.5–2.5 V) ensures strong enhancement with standard 5 V logic or automotive PMIC outputs. The SQD25N06-22L_GE3 thus supports direct microcontroller interfacing without external level shifters in many automotive subsystems.

Does SQD25N06-22L_GE3 have an integrated body diode, and what is its forward voltage?

Yes, the SQD25N06-22L_GE3 includes a monolithic body diode optimized for freewheeling in inductive switching applications. At I_F = 25 A and V_GS = 0 V, the source-drain forward voltage (V_SD) is 0.9 V (typ.) and 1.5 V (max) at 25 °C. This low V_SD minimizes conduction loss during PWM off-time and supports efficient operation in synchronous rectifier and H-bridge configurations.

What thermal resistance values are specified for SQD25N06-22L_GE3?

The SQD25N06-22L_GE3 specifies R_thJC = 2.4 °C/W (junction-to-case, drain tab) and R_thJA = 50 °C/W (junction-to-ambient, 1"² FR4 PCB). These values enable accurate thermal modeling: with 25 A current and 0.022 Ω R_DS(on), power dissipation is ~13.75 W, resulting in ~33 °C rise above case temperature. The SQD25N06-22L_GE3's low R_thJC makes it ideal for direct heatsink mounting in space-constrained modules.

How is SQD25N06-22L_GE3 qualified for automotive use?

The SQD25N06-22L_GE3 is AEC-Q101 qualified, having passed stress tests including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and temperature cycling. It also undergoes 100 % R_g and unclamped inductive switching (UIS) screening. These qualifications confirm its suitability for automotive powertrain, chassis, and safety-critical systems. The SQD25N06-22L_GE3 is rated for −55 to +175 °C operating junction temperature, meeting stringent under-hood environmental requirements.

SQD25N06-22L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1975 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD25N06-22L_GE3 FAQ

1.How can I place an order for SQD25N06-22L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD25N06-22L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD25N06-22L_GE3 reliable?

The price and inventory of SQD25N06-22L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD25N06-22L_GE3 is usually 5 days.

3.What payment methods are accepted for SQD25N06-22L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD25N06-22L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD25N06-22L_GE3?

SQD25N06-22L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD25N06-22L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD25N06-22L_GE3?

For technical support, including SQD25N06-22L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD25N06-22L_GE3 requirements.

6.How does Aetrix verify that SQD25N06-22L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD25N06-22L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD25N06-22L_GE3 meets industry standards.

7.What is the process for return or replacement of SQD25N06-22L_GE3?

All SQD25N06-22L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD25N06-22L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD25N06-22L_GE3 part is unused and in its original packaging.

Return procedure for SQD25N06-22L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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