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Vishay Siliconix SQD25N06-22L_T4GE3
- Part No.:
- SQD25N06-22L_T4GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD25N06-22L_T4GE3.pdf
- Description:
- MOSFET N-CH 60V 25A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,974
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Product details
Overview
SQD25N06-22L_T4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V VDS, 25 A continuous drain current at TC = 25 °C, and RDS(on) = 0.022 Ω at VGS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab - used in high-reliability 12 V/24 V automotive power switching such as body control modules and motor drivers.
For engineers reviewing the SQD25N06-22L_T4GE3 datasheet, SQD25N06-22L_T4GE3 pinout, SQD25N06-22L_T4GE3 application, or SQD25N06-22L_T4GE3 equivalent, key selection criteria include its 0.033 Ω RDS(on) at 4.5 V gate drive, 100 % UIS testing, low RthJC of 2.4 °C/W, and validated performance under pulsed avalanche stress up to 28 mJ.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and load-switching applications. Its gate threshold voltage (1.5–2.5 V) enables robust 3.3 V and 5 V logic-level drive compatibility, while the 33 nC typical total gate charge supports efficient PWM operation at frequencies up to 200 kHz.
The device integrates a co-packaged body diode with 0.9–1.5 V forward voltage at 25 A, enabling synchronous rectification and freewheeling in half-bridge topologies. Thermal design is supported by a junction-to-case thermal resistance of 2.4 °C/W and a PCB-mount junction-to-ambient rating of 50 °C/W on 1"² FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Withstands transients up to ISO 7637-2 Pulse 5a (clamped 65 V) in 24 V automotive systems |
| RDS(on) @ VGS = 10 V | 0.022 Ω - Delivers ≤ 13.8 W conduction loss at 25 A, enabling compact thermal design |
| RDS(on) @ VGS = 4.5 V | 0.033 Ω - Ensures full enhancement with standard 5 V microcontroller GPIO or automotive PMIC outputs |
| ID (continuous, TC = 25 °C) | 25 A - Supports high-current loads such as HVAC blowers and seat-motor drivers without derating |
| EAS | 28 mJ - Rated single-pulse avalanche energy allows reliable operation during inductive turn-off transients |
| TJ max | +175 °C - Enables placement near heat sources (e.g., engine bay ECUs) without thermal shutdown |
| Qg (total) | 33 nC - Enables <1 μs switching transitions with 33 Ω gate resistor, minimizing switching losses |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected metal tab for direct thermal coupling to PCB copper pour or heatsink. Dimensions per Vishay outline DWG 6019: 6.07 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives voltage-controlled signal; requires <3.3 nC gate-source charge (Qgs) for full turn-on |
| D (Drain) | High-side power input | Internally connected to exposed metal tab; must be routed to high-current power plane or heatsink |
| S (Source) | Power return / reference node | Serves as local ground reference for gate drive; connects to low-impedance source path to minimize shoot-through risk |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD-HBM ≥ 2 kV |
| 100 % Rg and UIS tested | Each unit screened for gate resistance (0.5–3.3 Ω) and unclamped inductive switching robustness |
| TrenchFET® architecture | Reduces specific on-resistance by ~30 % vs. planar MOSFETs at same voltage class, improving power density |
| Low RthJC = 2.4 °C/W | Enables >50 % higher power dissipation before reaching TJ limit vs. comparable SO-8 devices |
| Body diode Qrr not specified, but VSD = 0.9–1.5 V @ 25 A | Supports moderate-frequency freewheeling with predictable forward drop and no reverse recovery tail |
Applications
| Automotive Body Control Module (BCM) | 12 V DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Switching power distribution to door locks, interior lighting, and window lift motors in modern BCMs. IC Role / Device Role / Timing Role: High-side load switch controlling 12 V supply rails with overcurrent and thermal protection. Use Value: 0.022 Ω RDS(on) limits voltage drop to <0.55 V at 25 A, preserving system efficiency and reducing thermal pad area by 40 % vs. 0.035 Ω alternatives. |
Use Scenario: High-efficiency step-down conversion from 12 V battery to 3.3 V/5 V for infotainment and ADAS sensors. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, operating at 200–500 kHz. Use Value: Low Qg (33 nC) and fast switching (tf = 6–9 ns) reduce gate drive loss and enable >95 % peak efficiency at 10 A load. |
| Engine Cooling Fan Driver | 24 V Commercial Vehicle Starter Relay Replacement |
Use Scenario: PWM-controlled brushless fan driver in diesel engine cooling systems requiring 175 °C ambient operation. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg driving fan motor windings. Use Value: +175 °C TJ rating and 28 mJ EAS ensure reliability during stall conditions and hot-soak restarts without external snubbers. |
Use Scenario: Solid-state replacement for electromechanical starter relays in Class 8 trucks with 24 V battery systems. IC Role / Device Role / Timing Role: Single-pole high-current switch handling cranking surges up to 100 A (pulsed). Use Value: 100 A IDM rating and drain-tab thermal path allow direct mounting to chassis ground, eliminating relay coil power and contact bounce issues. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(on) = 0.0018 Ω @ 10 V (lower), but only rated to 150 °C TJ; TO-263 package (larger footprint) | Better for ultra-low-loss 48 V mild-hybrid inverters; unsuitable for under-hood 175 °C zones | Select when thermal margin > electrical margin, and PCB space permits larger D2PAK |
| IRFZ44NPBF | Non-AEC-Q101; RDS(on) = 0.028 Ω @ 10 V; 175 °C rating but no UIS or Rg screening | Limited to non-safety-critical industrial power supplies; not approved for automotive production | Acceptable for prototyping or cost-sensitive non-automotive designs where qualification is waived |
Compared with STL220N6F7AG and IRFZ44NPBF, the SQD25N06-22L_T4GE3 uniquely balances AEC-Q101 compliance, 175 °C capability, and TO-252 thermal efficiency - making it the only option qualified for production in engine-compartment-mounted 12 V/24 V switching nodes requiring zero field failures.
Availability
SQD25N06-22L_T4GE3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and 12 V/24 V DC-DC converters requiring stable component supply across multi-year vehicle programs.
Supply support for SQD25N06-22L_T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQD25N06-22L_T4GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-temperature, high-durability power switching in ASIL-B compliant systems.
FAQ
What is the maximum continuous drain current for SQD25N06-22L_T4GE3 at 125 °C case temperature?
The SQD25N06-22L_T4GE3 supports 20 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-temperature operation, and must be verified against actual board layout and airflow conditions in the final design.
Is SQD25N06-22L_T4GE3 suitable for 4.5 V logic-level gate drive?
Yes - the SQD25N06-22L_T4GE3 delivers RDS(on) = 0.033 Ω at VGS = 4.5 V and 20 A, confirming full enhancement with standard 5 V microcontroller outputs or automotive PMIC gate drivers. Its VGS(th) range (1.5–2.5 V) ensures reliable turn-on even with supply tolerance and temperature drift.
Does SQD25N06-22L_T4GE3 have avalanche capability, and how is it rated?
Yes - the SQD25N06-22L_T4GE3 is rated for single-pulse avalanche energy (EAS) of 28 mJ at L = 0.1 mH, with corresponding IAS = 24 A. This rating is production-tested per UIS methodology and enables robust operation during inductive load turn-off without external clamping components.
What is the thermal resistance from junction to case (RthJC) for SQD25N06-22L_T4GE3?
The SQD25N06-22L_T4GE3 has a maximum junction-to-case (drain) thermal resistance of 2.4 °C/W, measured under standardized conditions. This low value is enabled by the direct metal tab connection to the drain, allowing efficient heat transfer to PCB copper or external heatsinks in high-power automotive applications.
How does the AEC-Q101 qualification of SQD25N06-22L_T4GE3 impact its use in automotive designs?
The AEC-Q101 qualification of SQD25N06-22L_T4GE3 confirms compliance with stress tests including high-temperature operating life (HTOL), temperature cycling (TC), and unbiased highly accelerated stress test (UHAST). This certification is mandatory for inclusion in production automotive ECUs and validates long-term reliability in harsh under-hood environments.
SQD25N06-22L_T4GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1975 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD25N06-22L_T4GE3 FAQ
1.How can I place an order for SQD25N06-22L_T4GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD25N06-22L_T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD25N06-22L_T4GE3 reliable?
The price and inventory of SQD25N06-22L_T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD25N06-22L_T4GE3 is usually 5 days.
3.What payment methods are accepted for SQD25N06-22L_T4GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD25N06-22L_T4GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD25N06-22L_T4GE3?
SQD25N06-22L_T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD25N06-22L_T4GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD25N06-22L_T4GE3?
For technical support, including SQD25N06-22L_T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD25N06-22L_T4GE3 requirements.
6.How does Aetrix verify that SQD25N06-22L_T4GE3 is sourced from the original manufacturer or authorized distributors?
All SQD25N06-22L_T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD25N06-22L_T4GE3 meets industry standards.
7.What is the process for return or replacement of SQD25N06-22L_T4GE3?
All SQD25N06-22L_T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD25N06-22L_T4GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD25N06-22L_T4GE3 part is unused and in its original packaging.
Return procedure for SQD25N06-22L_T4GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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