Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD25N15-52-T4_GE3

Name: SQD25N15-52-T4_GE3
Brand: Vishay Siliconix
SKU: SQD25N15-52-T4_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQD25N15-52-T4_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD25N15-52-T4_GE3.pdf

Description:: MOSFET N-CH 150V 25A TO252AA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,366

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQD25N15-52-T4_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 150 V drain-source voltage, 25 A continuous drain current at 25 °C, and 0.052 Ω R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab-used in high-reliability DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQD25N15-52-T4_GE3 datasheet, SQD25N15-52-T4_GE3 pinout, SQD25N15-52-T4_GE3 application, or SQD25N15-52-T4_GE3 equivalent, key selection criteria include its 1.4 °C/W junction-to-case thermal resistance, 100% R_g and UIS tested reliability, 34 nC typical total gate charge, and compliance with automotive thermal cycling and humidity robustness requirements.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching performance while maintaining rugged avalanche capability (E_AS = 45 mJ). Its gate threshold voltage range (2.5–4.0 V) ensures stable turn-on under wide automotive supply variations, and the integrated body diode supports freewheeling in synchronous rectification topologies.

The device operates across -55 °C to +175 °C junction temperature range and is characterized for dynamic parameters-including 11 ns typical turn-on delay, 21 ns rise time, and 97 pF reverse transfer capacitance-at V_DS = 75 V and I_D = 25 A, enabling precise timing control in high-frequency PWM circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage compatible with 48 V and 12 V automotive battery architectures with transient margin.
R_DS(on) @ V_GS = 10 V	0.052 Ω - Enables ≤13 W conduction loss at 25 A, critical for thermally constrained under-hood modules.
I_D (continuous, T_C = 25 °C)	25 A - Supports high-current load switching without external heatsinking in PCB-mounted applications.
E_AS	45 mJ - Withstands single-pulse inductive energy during fault events in solenoid or motor drive circuits.
Q_g (typ.)	34 nC - Determines gate driver power requirement; enables efficient 100–500 kHz switching with <1 W driver dissipation.
R_thJC	1.4 °C/W - Allows direct thermal coupling to heatsink via drain-tab mounting, reducing system-level thermal resistance.
T_J max	+175 °C - Meets under-hood ambient requirements per AEC-Q101, supporting operation near exhaust manifolds or turbochargers.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected metal tab for thermal and electrical connection. Dimensions per Vishay document 64424: 6.09 mm × 6.54 mm × 2.28 mm (L × W × H), with 2.28 mm lead pitch (e) and 4.56 mm center-to-center spacing (e1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	Control terminal; requires ≤±20 V rating; low 1.0 Ω max gate resistance minimizes ringing in high-dV/dt environments.
Pin 2 (Center)	Drain (D)	Main power output; internally connected to exposed copper tab-must be soldered to large copper pour for thermal and current handling.
Pin 3 (Right)	Source (S)	Power return path; referenced to gate drive ground; forms common node with body diode cathode for freewheeling.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HAST, and mechanical shock-no derating required for passenger vehicle ECUs.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness-reduces field failure risk in motor drives.
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar MOSFETs at same die size-improves power density in space-constrained ADAS modules.
Low R_thJC (1.4 °C/W)	Enables >70 % of rated power dissipation to be transferred directly to heatsink-eliminates need for thermal vias in many designs.
Body diode V_SD (typ.)	0.87 V at 20 A - Reduces freewheeling losses in buck converters versus discrete Schottky solutions.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-speed switching of fuel injector coils in gasoline direct injection systems with peak currents up to 22 A. IC Role / Device Role / Timing Role: Primary high-side switch controlling coil energization; must sustain 150 V transients during coil flyback. Use Value: 45 mJ E_AS rating absorbs inductive kickback without snubber, and 175 °C T_J max ensures reliability near hot engine blocks.	Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for regenerative braking energy recovery. IC Role / Device Role / Timing Role: Low-side power switch operating at 200 kHz with 25 A RMS current; body diode used during dead-time conduction. Use Value: 0.052 Ω R_DS(on) reduces conduction loss to <0.033 W/A², improving conversion efficiency by ≥1.2 % over comparable 100 V parts.
Electric Power Steering (EPS) Motor Phase Leg	Automotive HVAC Blower Motor Controller
Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter, handling 30 A peak phase current with PWM commutation. IC Role / Device Role / Timing Role: Low-side switch in inverter leg; subjected to repetitive UIS stress during motor stall conditions. Use Value: 100 % UIS testing ensures survival under 30 A stall current with 0.1 mH inductance-critical for steering assist continuity.	Use Scenario: PWM-controlled blower motor driver in climate control systems, operating continuously at 15–20 A with variable speed demand. IC Role / Device Role / Timing Role: Single-ended switch modulating motor voltage; requires stable R_DS(on) across -40 °C to +125 °C ambient. Use Value: R_DS(on) drift limited to ≤2.6× from 25 °C to 175 °C (0.136 Ω max), ensuring predictable thermal rise and fan speed regulation.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of fuel injector coils in gasoline direct injection systems with peak currents up to 22 A.

IC Role / Device Role / Timing Role: Primary high-side switch controlling coil energization; must sustain 150 V transients during coil flyback.

Use Value: 45 mJ E_AS rating absorbs inductive kickback without snubber, and 175 °C T_J max ensures reliability near hot engine blocks.

Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for regenerative braking energy recovery.

IC Role / Device Role / Timing Role: Low-side power switch operating at 200 kHz with 25 A RMS current; body diode used during dead-time conduction.

Use Value: 0.052 Ω R_DS(on) reduces conduction loss to <0.033 W/A², improving conversion efficiency by ≥1.2 % over comparable 100 V parts.

Electric Power Steering (EPS) Motor Phase Leg

Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter, handling 30 A peak phase current with PWM commutation.

IC Role / Device Role / Timing Role: Low-side switch in inverter leg; subjected to repetitive UIS stress during motor stall conditions.

Use Value: 100 % UIS testing ensures survival under 30 A stall current with 0.1 mH inductance-critical for steering assist continuity.

Use Scenario: PWM-controlled blower motor driver in climate control systems, operating continuously at 15–20 A with variable speed demand.

IC Role / Device Role / Timing Role: Single-ended switch modulating motor voltage; requires stable R_DS(on) across -40 °C to +125 °C ambient.

Use Value: R_DS(on) drift limited to ≤2.6× from 25 °C to 175 °C (0.136 Ω max), ensuring predictable thermal rise and fan speed regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N15F7	150 V, 220 A pulsed, R_DS(on) = 0.0027 Ω @ 10 V; TO-220FP package; higher current but larger footprint and no AEC-Q101 certification.	Targeted at industrial motor drives-not validated for automotive temperature cycling or humidity exposure.	Select when board space allows larger package and AEC-Q101 is not mandated; avoid for under-hood ECU use.
IRF3205PBF	55 V, 110 A, R_DS(on) = 0.008 Ω @ 10 V; TO-220; lacks 150 V rating and automotive qualification.	Suitable only for 12 V/24 V systems-cannot withstand 150 V load dump transients in 48 V architectures.	Use only in legacy 12 V chassis systems where voltage stress is below 60 V; not a functional replacement for SQD25N15-52-T4_GE3.

Compared with STL220N15F7 and IRF3205PBF, SQD25N15-52-T4_GE3 uniquely balances 150 V rating, AEC-Q101 compliance, TO-252 thermal performance, and 25 A continuous current-making it the only viable option for compact, high-temp automotive power stages requiring guaranteed reliability.

Availability

SQD25N15-52-T4_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and HVAC blower controllers requiring stable component supply across automotive production lifecycles.

Supply support for SQD25N15-52-T4_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for automotive and industrial markets.

The SQD25N15-52-T4_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-temperature, high-transient-voltage environments in engine bay and chassis electronics.

FAQ

What is the maximum continuous drain current rating for SQD25N15-52-T4_GE3 at 125 °C case temperature?

The SQD25N15-52-T4_GE3 has a continuous drain current rating of 16 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-temperature operation and must be accounted for in thermal design of SQD25N15-52-T4_GE3-based circuits.

Is SQD25N15-52-T4_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes, SQD25N15-52-T4_GE3 is suitable for synchronous rectification due to its 0.052 Ω R_DS(on) at 10 V gate drive, 175 °C junction rating, and low Q_gd/Q_gs ratio (5.4 nC / 14.5 nC), which supports clean turn-off in high-frequency (≥200 kHz) topologies. Its body diode forward voltage of 0.87 V also minimizes dead-time conduction loss in SQD25N15-52-T4_GE3-based converters.

Does SQD25N15-52-T4_GE3 have a fully rated avalanche energy specification?

Yes, SQD25N15-52-T4_GE3 is fully specified for single-pulse avalanche with I_AS = 30 A and E_AS = 45 mJ at L = 0.1 mH, verified per JEDEC JESD24-1. This rating applies to inductive switching events such as fuel injector flyback or motor phase commutation, and is integral to SQD25N15-52-T4_GE3's AEC-Q101 qualification.

What is the gate threshold voltage range for SQD25N15-52-T4_GE3, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for SQD25N15-52-T4_GE3 is 2.5–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers while avoiding unintended conduction during cold-cranking (battery dip to 6 V). Drive circuits for SQD25N15-52-T4_GE3 must supply ≥10 V to guarantee full enhancement and minimal R_DS(on).

How does the thermal resistance of SQD25N15-52-T4_GE3 compare between junction-to-case and junction-to-ambient configurations?

SQD25N15-52-T4_GE3 has R_thJC = 1.4 °C/W (junction-to-case) and R_thJA = 50 °C/W (junction-to-ambient, PCB mount). The 35× difference confirms that effective heat extraction depends almost entirely on mounting the drain tab to an external heatsink or large copper area-board-only cooling yields insufficient thermal performance for full 25 A operation in SQD25N15-52-T4_GE3 applications.

SQD25N15-52-T4_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD25N15-52-T4_GE3 FAQ

1.How can I place an order for SQD25N15-52-T4_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD25N15-52-T4_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD25N15-52-T4_GE3 reliable?

The price and inventory of SQD25N15-52-T4_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD25N15-52-T4_GE3 is usually 5 days.

3.What payment methods are accepted for SQD25N15-52-T4_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD25N15-52-T4_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD25N15-52-T4_GE3?

SQD25N15-52-T4_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD25N15-52-T4_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD25N15-52-T4_GE3?

For technical support, including SQD25N15-52-T4_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD25N15-52-T4_GE3 requirements.

6.How does Aetrix verify that SQD25N15-52-T4_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD25N15-52-T4_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD25N15-52-T4_GE3 meets industry standards.

7.What is the process for return or replacement of SQD25N15-52-T4_GE3?

All SQD25N15-52-T4_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD25N15-52-T4_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD25N15-52-T4_GE3 part is unused and in its original packaging.

Return procedure for SQD25N15-52-T4_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …