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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD30N05-20L_GE3

Name: SQD30N05-20L_GE3
Brand: Vishay Siliconix
SKU: SQD30N05-20L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD30N05-20L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD30N05-20L_GE3.pdf

Description:: MOSFET N-CH 55V 30A TO252AA

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Product details

Overview

SQD30N05-20L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 55 V V_DS, 30 A continuous drain current at 25 °C, and 20 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is housed in a DPAK (TO-252) package with drain-connected tab, suited for high-reliability motor control and DC-DC converter output stages.

For engineers reviewing the SQD30N05-20L_GE3 datasheet, SQD30N05-20L_GE3 pinout, SQD30N05-20L_GE3 application, or SQD30N05-20L_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 3 Ω/W junction-to-case thermal resistance, 100% R_g and UIS tested reliability, and verified performance under pulsed avalanche conditions (E_AS = 20 mJ).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V and 24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard logic-level controllers, while the 938 pF typical input capacitance and 12 nC total gate charge support efficient PWM operation up to several hundred kHz.

The device integrates a body diode with 1.2–1.5 V forward voltage at 80 A and supports synchronous rectification. Thermal design is enabled by its 3 °C/W R_thJC, allowing direct heatsinking via the exposed drain tab, and its SOA curve confirms safe operation up to 120 A pulsed drain current with appropriate PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching
R_DS(on) @ 10 V	0.020 Ω - Enables ≤0.6 W conduction loss at 30 A, critical for thermally constrained engine bay modules
I_D (continuous)	30 A @ T_C = 25 °C - Sustained current capability with adequate heatsinking on 1"² FR4 PCB
E_AS	20 mJ - Avalanche energy rating validated for inductive load turn-off without snubber circuits
R_thJC	3 °C/W - Low thermal resistance from junction to drain tab, enabling direct mounting to metal chassis or heatsink
Q_g	12 nC - Gate charge supporting <10 ns turn-on delay and <15 ns rise time with 1 Ω driver
AEC-Q101	Qualified - Validated for automotive applications including engine control, transmission, and ADAS power stages

Pinout & Package

DPAK (TO-252) package with exposed drain tab (thermally and electrically connected to Drain), 3-pin surface-mount outline per Vishay document 64424. Tab soldering required for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	Control terminal; accepts 0–20 V gate drive; 2.1 Ω typical gate resistance limits ringing
Pin 2 (Middle)	Drain (D)	Main power terminal; internally bonded to exposed copper tab; must be soldered to PCB copper pour or heatsink
Pin 3 (Right)	Source (S)	Power return path; referenced to system ground; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 20 mΩ R_DS(on) in DPAK, reducing conduction loss vs. planar MOSFETs of same die size
100% R_g and UIS testing	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
Drain-connected tab	Provides low-inductance, low-resistance thermal path to PCB; eliminates need for separate thermal pad vias
175 °C maximum T_J	Supports operation in under-hood environments where ambient exceeds 125 °C
Body diode Q_rr optimized	Low reverse recovery charge enables use in synchronous buck converters without external Schottky

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Control
Use Scenario: High-side switching of 12 V solenoid injectors with 5–10 ms pulse width and 200 Hz max frequency. IC Role / Device Role / Timing Role: Power switch delivering precise current pulses; handles inductive kickback via built-in avalanche capability. Use Value: 20 mJ E_AS rating eliminates need for external TVS, reducing BOM count and board space in compact ECU modules.	Use Scenario: PWM-controlled 24 V DC blower motor driving airflow in climate control systems. IC Role / Device Role / Timing Role: Low-side switching element operating at 20–25 kHz PWM with 30 A peak current. Use Value: 30 A continuous rating at 125 °C case temperature ensures stable operation during prolonged cabin heating cycles.
12 V Automotive DC-DC Converter Primary Switch	ADAS Camera Module Power Sequencing
Use Scenario: Primary-side switch in 12 V → 5 V/3.3 V buck converter powering infotainment and telematics ECUs. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier replacement; driven by integrated controller with 12 nC Q_g. Use Value: 12 nC gate charge and 7 ns turn-on delay enable >95% efficiency at 500 kHz switching frequency.	Use Scenario: Controlled power-up/down sequencing of image sensor, ISP, and PMIC in rear-view camera modules. IC Role / Device Role / Timing Role: Load switch enabling soft-start and fault-isolation between battery rail and downstream subsystems. Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure reliability across vehicle lifetime and extreme temperature cycling.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Control

Use Scenario: High-side switching of 12 V solenoid injectors with 5–10 ms pulse width and 200 Hz max frequency.

IC Role / Device Role / Timing Role: Power switch delivering precise current pulses; handles inductive kickback via built-in avalanche capability.

Use Value: 20 mJ E_AS rating eliminates need for external TVS, reducing BOM count and board space in compact ECU modules.

Use Scenario: PWM-controlled 24 V DC blower motor driving airflow in climate control systems.

IC Role / Device Role / Timing Role: Low-side switching element operating at 20–25 kHz PWM with 30 A peak current.

Use Value: 30 A continuous rating at 125 °C case temperature ensures stable operation during prolonged cabin heating cycles.

12 V Automotive DC-DC Converter Primary Switch

ADAS Camera Module Power Sequencing

Use Scenario: Primary-side switch in 12 V → 5 V/3.3 V buck converter powering infotainment and telematics ECUs.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier replacement; driven by integrated controller with 12 nC Q_g.

Use Value: 12 nC gate charge and 7 ns turn-on delay enable >95% efficiency at 500 kHz switching frequency.

Use Scenario: Controlled power-up/down sequencing of image sensor, ISP, and PMIC in rear-view camera modules.

IC Role / Device Role / Timing Role: Load switch enabling soft-start and fault-isolation between battery rail and downstream subsystems.

Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure reliability across vehicle lifetime and extreme temperature cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF5	55 V, 220 A rated but in LFPAK56; R_DS(on) = 1.7 mΩ @ 10 V - significantly lower on-resistance but larger footprint and higher cost	Targeted at high-current traction inverters; over-specified for 30 A DPAK-class loads	Select when board space allows larger package and ultra-low R_DS(on) justifies cost premium
IRL3803PBF	30 V, 140 A, TO-220; R_DS(on) = 3.3 mΩ @ 10 V - lower voltage rating limits use to 24 V systems only	Legacy industrial motor drives; lacks AEC-Q101 qualification and 175 °C rating	Acceptable for non-automotive 24 V applications where qualification and extended temperature range are not required

Compared with STL220N5LF5 and IRL3803PBF, the SQD30N05-20L_GE3 delivers optimal balance of automotive qualification, thermal performance (3 °C/W R_thJC), and DPAK-compatible form factor - making it the preferred choice for space-constrained, high-temperature automotive power stages requiring 30 A switching.

Availability

SQD30N05-20L_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine management systems, and ADAS power modules requiring stable component supply and long-term lifecycle assurance.

Supply support for SQD30N05-20L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD30N05-20L_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum junction temperature rating for SQD30N05-20L_GE3?

The SQD30N05-20L_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress testing. This rating enables reliable operation in under-hood environments where ambient temperatures exceed 125 °C, provided thermal design maintains T_J ≤ 175 °C using the specified R_thJC = 3 °C/W path to the drain tab. The SQD30N05-20L_GE3 datasheet confirms this limit across all absolute maximum ratings tables.

Is SQD30N05-20L_GE3 qualified to AEC-Q101 standards?

Yes, the SQD30N05-20L_GE3 is explicitly AEC-Q101 qualified, as stated in the Vishay product summary and features list. This qualification covers temperature cycling, humidity testing, mechanical shock, and high-temperature operating life - confirming suitability for automotive powertrain and safety-critical applications. The SQD30N05-20L_GE3 documentation (S15-1873-Rev. D) lists "AEC-Q101 qualified" as a primary feature.

What is the R_DS(on) value of SQD30N05-20L_GE3 at 4.5 V gate drive?

The SQD30N05-20L_GE3 exhibits an R_DS(on) of 0.026 Ω (max) at V_GS = 4.5 V and I_D = 15 A, per the Vishay specifications table. This logic-level compatibility allows direct drive from microcontrollers and gate drivers operating at 3.3 V or 5 V, eliminating level-shifting circuitry. The SQD30N05-20L_GE3 maintains stable on-resistance across its full temperature range, with typical values of 0.021 Ω at 25 °C.

Does SQD30N05-20L_GE3 include avalanche ruggedness testing?

Yes, the SQD30N05-20L_GE3 is 100% tested for unclamped inductive switching (UIS) and specifies a single-pulse avalanche energy (E_AS) of 20 mJ at T_J = 25 °C. This validated ruggedness allows safe operation in inductive load switching applications like fuel injectors and solenoids without external clamping components. The SQD30N05-20L_GE3 datasheet provides full avalanche SOA curves and test conditions in section "Absolute Maximum Ratings".

What package type does SQD30N05-20L_GE3 use, and how is thermal management implemented?

The SQD30N05-20L_GE3 uses the DPAK (TO-252AA) surface-mount package with an exposed drain tab that serves as both the electrical drain connection and primary thermal path. Thermal management relies on soldering the tab to ≥1"² of 2 oz. copper on FR4 PCB or directly to a metal heatsink, achieving R_thJC = 3 °C/W. The SQD30N05-20L_GE3 package drawing (document 64424) defines exact dimensions and pad layout requirements for optimal thermal performance.

SQD30N05-20L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1175 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD30N05-20L_GE3 FAQ

1.How can I place an order for SQD30N05-20L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD30N05-20L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD30N05-20L_GE3 reliable?

The price and inventory of SQD30N05-20L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD30N05-20L_GE3 is usually 5 days.

3.What payment methods are accepted for SQD30N05-20L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD30N05-20L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD30N05-20L_GE3?

SQD30N05-20L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD30N05-20L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD30N05-20L_GE3?

For technical support, including SQD30N05-20L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD30N05-20L_GE3 requirements.

6.How does Aetrix verify that SQD30N05-20L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD30N05-20L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD30N05-20L_GE3 meets industry standards.

7.What is the process for return or replacement of SQD30N05-20L_GE3?

All SQD30N05-20L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD30N05-20L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD30N05-20L_GE3 part is unused and in its original packaging.

Return procedure for SQD30N05-20L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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