Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD30N05-20L_T4GE3

Name: SQD30N05-20L_T4GE3
Brand: Vishay Siliconix
SKU: SQD30N05-20L_T4GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQD30N05-20L_T4GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD30N05-20L_T4GE3.pdf

Description:: MOSFET N-CH 55V 30A TO252AA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,826

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQD30N05-20L_T4GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 55 V drain-source voltage, 30 A continuous drain current at 25 °C, and 0.020 Ω R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and DPAK (TO-252) package with drain-connected tab - used in high-reliability DC-DC converters, motor drivers, and automotive body control modules.

For engineers reviewing the SQD30N05-20L_T4GE3 datasheet, SQD30N05-20L_T4GE3 pinout, SQD30N05-20L_T4GE3 application, or SQD30N05-20L_T4GE3 equivalent, key selection criteria include its 100 % R_g and UIS tested reliability, low gate charge (12–18 nC), and thermal performance with R_thJC = 3 °C/W - critical for thermally constrained automotive PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard logic-level controllers, while the 100 % UIS (unclamped inductive switching) test ensures ruggedness against inductive load transients.

The device operates across -55 °C to +175 °C junction temperature range and delivers stable R_DS(on) up to 175 °C (0.043 Ω max at V_GS = 10 V, I_D = 20 A). Its 938–1175 pF input capacitance and 86–110 pF reverse transfer capacitance support fast, controlled switching in high-frequency synchronous rectifiers and BLDC gate drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 42 V automotive battery systems with margin for load dump transients
R_DS(on) @ V_GS = 10 V	0.020 Ω - enables ≤12 W conduction loss at 30 A, reducing heatsink requirements
I_D Continuous @ T_C = 25 °C	30 A - suitable for high-current solenoid and pump drivers without derating
R_thJC	3 °C/W - allows direct thermal coupling to heatsink via drain-tab mounting for efficient power dissipation
Q_g	12–18 nC - enables <30 ns turn-on delay and <15 ns rise time with 1 Ω gate resistor
T_J Max	+175 °C - certified for under-hood applications including engine control and transmission modules
AEC-Q101	Qualified - meets stress testing requirements for automotive electronic components per JESD22-A108

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline (Type A), JEDEC MS-012 compliant; dimensions: 6.22 × 6.73 × 1.78 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel channel	Reference node for gate drive; connects to low-side return path in half-bridge configurations
Pin 2 (Gate)	Control electrode	Receives logic-level signal; requires <2.5 V threshold to initiate conduction; gate resistance 1–4.5 Ω limits ringing
Pin 3 (Drain)	Main current-carrying terminal	Internally bonded to metal tab - must be soldered to large copper pour or heatsink for thermal management

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) × area ratio among DPAK 55 V MOSFETs, enabling compact high-current designs
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching survival - eliminates field failures in relay replacement circuits
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and ESD testing - supports PPAP documentation
Drain-connected tab	Provides low-inductance, low-thermal-resistance path to PCB copper or external heatsink - reduces system-level thermal impedance by >40 % vs. non-tab packages
175 °C operation	Enables placement in high-ambient zones (e.g., near engines or inverters) without thermal throttling or derating

Applications

Automotive Body Control Module (BCM)	48 V Mild Hybrid DC-DC Converter
Use Scenario: Driving high-current loads such as headlamp leveling actuators, HVAC blower motors, and door lock solenoids in centralized BCM units. IC Role / Device Role / Timing Role: High-side or low-side switch controlling 12 V/24 V loads with PWM duty cycle modulation. Use Value: Low R_DS(on) minimizes I²R heating during sustained 20–30 A operation; AEC-Q101 compliance ensures 15-year field reliability.	Use Scenario: Synchronous rectification in bidirectional buck-boost stages converting between 12 V starter battery and 48 V Li-ion storage. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 100–300 kHz with fast turn-off to reduce reverse recovery losses. Use Value: 18 nC total gate charge and 8 ns fall time enable high-efficiency switching with minimal gate driver power consumption.
Electric Power Steering (EPS) Motor Driver	Commercial Vehicle LED Headlamp Driver
Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS assist motor (typically 30–50 A peak). IC Role / Device Role / Timing Role: Low-side switching element with fast, controlled turn-on/off to minimize shoot-through risk and EMI generation. Use Value: 120 A pulsed drain current rating and 20 mJ single-pulse avalanche energy withstand capability protect against motor phase fault transients.	Use Scenario: Constant-current dimming switch for high-brightness LED arrays (e.g., 10–20 A strings) in Class 8 truck headlamps. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current with thermal foldback at elevated ambient temperatures. Use Value: Stable R_DS(on) up to 175 °C ensures consistent current regulation even when mounted on thermally stressed aluminum PCBs.

Automotive Body Control Module (BCM)

48 V Mild Hybrid DC-DC Converter

Use Scenario: Driving high-current loads such as headlamp leveling actuators, HVAC blower motors, and door lock solenoids in centralized BCM units.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling 12 V/24 V loads with PWM duty cycle modulation.

Use Value: Low R_DS(on) minimizes I²R heating during sustained 20–30 A operation; AEC-Q101 compliance ensures 15-year field reliability.

Use Scenario: Synchronous rectification in bidirectional buck-boost stages converting between 12 V starter battery and 48 V Li-ion storage.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 100–300 kHz with fast turn-off to reduce reverse recovery losses.

Use Value: 18 nC total gate charge and 8 ns fall time enable high-efficiency switching with minimal gate driver power consumption.

Electric Power Steering (EPS) Motor Driver

Commercial Vehicle LED Headlamp Driver

Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS assist motor (typically 30–50 A peak).

IC Role / Device Role / Timing Role: Low-side switching element with fast, controlled turn-on/off to minimize shoot-through risk and EMI generation.

Use Value: 120 A pulsed drain current rating and 20 mJ single-pulse avalanche energy withstand capability protect against motor phase fault transients.

Use Scenario: Constant-current dimming switch for high-brightness LED arrays (e.g., 10–20 A strings) in Class 8 truck headlamps.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current with thermal foldback at elevated ambient temperatures.

Use Value: Stable R_DS(on) up to 175 °C ensures consistent current regulation even when mounted on thermally stressed aluminum PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 55 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL37N55M5	Higher R_DS(on) (0.023 Ω @ 10 V), same DPAK package, lower Q_g (10.5 nC)	Better suited for ultra-high-frequency switching (>500 kHz); slightly higher conduction loss at 30 A	Select when gate drive strength is limited and switching loss dominates thermal budget
IRF3710PBF	Higher V_DS (100 V), TO-220 package, higher R_DS(on) (0.056 Ω), no AEC-Q101	Designed for industrial 48 V systems; lacks automotive qualification and thermal performance	Use only in non-automotive, non-temperature-critical applications where board space permits TO-220 mounting

Compared with STL37N55M5 and IRF3710PBF, SQD30N05-20L_T4GE3 offers the optimal balance of low R_DS(on), AEC-Q101 compliance, and DPAK thermal efficiency - making it the preferred choice for space-constrained, high-reliability automotive power switching where both conduction and switching losses must be minimized.

Availability

SQD30N05-20L_T4GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended production lifecycles.

Supply support for SQD30N05-20L_T4GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD30N05-20L_T4GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family - engineered specifically for high-current, high-temperature switching in next-generation vehicle electrification systems.

FAQ

What is the maximum continuous drain current rating for SQD30N05-20L_T4GE3 at 125 °C case temperature?

The SQD30N05-20L_T4GE3 supports 19 A continuous drain current at T_C = 125 °C, as specified in its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation - designers must ensure adequate PCB copper area or heatsinking to maintain case temperature below this threshold during full-load conditions. The SQD30N05-20L_T4GE3 maintains stable R_DS(on) up to 175 °C junction temperature, but case temperature is the practical design limit for thermal interface management.

Is SQD30N05-20L_T4GE3 suitable for high-frequency PWM motor control above 100 kHz?

Yes, SQD30N05-20L_T4GE3 is well-suited for high-frequency PWM motor control above 100 kHz due to its low total gate charge (12–18 nC), fast switching times (t_d(off) = 18–27 ns, t_f = 5–8 ns), and low Crss (86–110 pF). These parameters minimize switching losses and gate drive power requirements in BLDC and stepper motor drivers. However, layout parasitics and gate resistor selection must be optimized - the SQD30N05-20L_T4GE3 benefits from tight gate loop routing and 1–2 Ω series resistance to suppress oscillation.

Does SQD30N05-20L_T4GE3 include integrated ESD protection on the gate terminal?

No, SQD30N05-20L_T4GE3 does not include integrated gate ESD protection diodes. Its gate-source leakage is specified at ±100 nA at ±20 V, and the absolute maximum V_GS rating is ±20 V - indicating reliance on external protection (e.g., Zener clamps or RC snubbers) in systems exposed to handling or system-level ESD events. This is typical for high-performance discrete MOSFETs like the SQD30N05-20L_T4GE3, where internal protection would degrade R_DS(on) and switching speed.

What is the thermal resistance from junction to case (R_thJC) for SQD30N05-20L_T4GE3, and how should it be applied in thermal design?

The SQD30N05-20L_T4GE3 has a junction-to-case thermal resistance (R_thJC) of 3 °C/W, measured from die junction to the drain tab surface. In thermal design, this value applies only when the drain tab is soldered directly to a thermally conductive plane or heatsink with low interfacial resistance - it does not include PCB conduction or ambient convection. For example, with a 10 °C/W heatsink, total R_thJA ≈ 13 °C/W, allowing ~3.8 W dissipation for a 50 °C rise. The SQD30N05-20L_T4GE3 requires careful thermal interface material selection to realize this spec.

Can SQD30N05-20L_T4GE3 replace older Vishay parts like SIHFU300 or STP30NF55 in existing designs?

SQD30N05-20L_T4GE3 is not a direct drop-in replacement for SIHFU300 (TO-220, 55 V, 30 A) or STP30NF55 (TO-220, 55 V, 30 A) due to its DPAK (TO-252) package - differing footprint, thermal path, and pinout. While electrical specs overlap (V_DS, I_D, R_DS(on)), the SQD30N05-20L_T4GE3 requires PCB redesign for surface-mount assembly and thermal pad layout. Its AEC-Q101 qualification and 175 °C rating exceed those legacy parts, but mechanical incompatibility means SQD30N05-20L_T4GE3 must be validated as a new component in any retrofit.

SQD30N05-20L_T4GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1175 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD30N05-20L_T4GE3 FAQ

1.How can I place an order for SQD30N05-20L_T4GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD30N05-20L_T4GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD30N05-20L_T4GE3 reliable?

The price and inventory of SQD30N05-20L_T4GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD30N05-20L_T4GE3 is usually 5 days.

3.What payment methods are accepted for SQD30N05-20L_T4GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD30N05-20L_T4GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD30N05-20L_T4GE3?

SQD30N05-20L_T4GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD30N05-20L_T4GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD30N05-20L_T4GE3?

For technical support, including SQD30N05-20L_T4GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD30N05-20L_T4GE3 requirements.

6.How does Aetrix verify that SQD30N05-20L_T4GE3 is sourced from the original manufacturer or authorized distributors?

All SQD30N05-20L_T4GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD30N05-20L_T4GE3 meets industry standards.

7.What is the process for return or replacement of SQD30N05-20L_T4GE3?

All SQD30N05-20L_T4GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD30N05-20L_T4GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD30N05-20L_T4GE3 part is unused and in its original packaging.

Return procedure for SQD30N05-20L_T4GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …