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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD35N05-26L-GE3

Name: SQD35N05-26L-GE3
Brand: Vishay Siliconix
SKU: SQD35N05-26L-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD35N05-26L-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD35N05-26L-GE3.pdf

Description:: MOSFET N-CH 55V 30A TO252

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Product details

Overview

SQD35N05-26L-GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 55 V V_DS, 30 A continuous drain current at T_C = 25 °C, and R_DS(on) of 0.020 Ω at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.

For engineers reviewing the SQD35N05-26L-GE3 datasheet, SQD35N05-26L-GE3 pinout, SQD35N05-26L-GE3 application, or SQD35N05-26L-GE3 equivalent, key selection criteria include its 3 Ω/W junction-to-case thermal resistance, 100% R_g and UIS tested reliability, TO-252 package with drain-connected tab, and halogen-free, RoHS-compliant construction.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-current 12 V/24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard logic-level controllers, while its 938 pF typical input capacitance and 12 nC total gate charge support efficient PWM operation at frequencies up to several hundred kHz.

The device integrates a co-packaged body diode with 1.2–1.5 V forward voltage at 80 A, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design is supported by a low 3 °C/W R_thJC, allowing high-power dissipation when mounted on copper-clad PCBs with thermal relief.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching
R_DS(on) @ V_GS = 10 V	0.020 Ω - Enables ≤0.6 W conduction loss at 30 A, reducing heatsink requirements
I_D (continuous)	30 A @ T_C = 25 °C - Supports high-current motor phases and starter solenoid drivers
T_J max	+175 °C - Qualified for under-hood environments including engine control units and transmission modules
Q_g	12 nC - Enables fast turn-on with <11 ns delay and <15 ns rise time using 1 Ω gate resistor
R_thJC	3 °C/W - Allows direct thermal coupling to heatsink via drain-tab mounting in TO-252
AEC-Q101	Qualified - Meets stress test requirements for automotive electronic components per Rev. D

Pinout & Package

Package: TO-252 (DPAK), surface-mount, drain-connected metal tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main power output terminal	Internally bonded to exposed copper tab; must be connected to system ground or low-impedance return path for thermal and EMI control
G (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD; requires gate resistor for dV/dt control
S (Source)	Power return reference	Common node for load current return and gate drive reference; defines local ground for driver IC placement

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, improving power density in space-constrained ECUs
100% R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching events in motor drives
Drain-connected tab	Provides low-inductance, low-resistance thermal path to PCB copper pour or external heatsink without solder void risk
Halogen-free & RoHS compliant	Meets automotive material compliance standards (IEC 61249-2-21) and EU Directive 2002/95/EC
Single-pulse avalanche energy	20 mJ rating supports reliable operation during transient overvoltage events in automotive load-dump conditions

Applications

Engine Cooling Fan Control	Automotive DC-DC Converter
Use Scenario: PWM-controlled 12 V brushless fan driving up to 30 A peak current in engine bay with ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: High-side or low-side power switch regulating fan speed via duty-cycle modulation at 20–50 kHz. Use Value: Low 0.020 Ω R_DS(on) minimizes I²R heating, while 175 °C T_J rating ensures stable operation without derating in confined spaces.	Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for 48 V mild-hybrid architectures. IC Role / Device Role / Timing Role: Low-side switch conducting high average current with fast turn-off (<8 ns fall time) to reduce cross-conduction losses. Use Value: 12 nC Q_g and 1.3–4 Ω R_g enable precise gate timing control; body diode V_SD = 1.2 V supports zero-voltage switching transitions.
Transmission Solenoid Driver	Electric Power Steering (EPS) Motor Phase
Use Scenario: Driving 55 V-rated hydraulic solenoids with pulsed currents up to 30 A and 120 A surge peaks during gear engagement. IC Role / Device Role / Timing Role: Robust switching element handling repetitive inductive kickback and high-energy UIS events. Use Value: 20 mJ single-pulse avalanche energy and AEC-Q101 qualification ensure long-term reliability under mechanical shock and thermal cycling.	Use Scenario: Half-bridge leg in three-phase EPS motor inverter operating continuously at 15–25 A RMS with frequent torque transients. IC Role / Device Role / Timing Role: High-efficiency phase switch delivering low conduction loss and minimal switching loss at 10–20 kHz PWM frequency. Use Value: 3 °C/W R_thJC allows direct thermal coupling to aluminum chassis, maintaining T_J < 150 °C even at full load without forced air cooling.

Engine Cooling Fan Control

Automotive DC-DC Converter

Use Scenario: PWM-controlled 12 V brushless fan driving up to 30 A peak current in engine bay with ambient temperatures up to 125 °C.

IC Role / Device Role / Timing Role: High-side or low-side power switch regulating fan speed via duty-cycle modulation at 20–50 kHz.

Use Value: Low 0.020 Ω R_DS(on) minimizes I²R heating, while 175 °C T_J rating ensures stable operation without derating in confined spaces.

Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: Low-side switch conducting high average current with fast turn-off (<8 ns fall time) to reduce cross-conduction losses.

Use Value: 12 nC Q_g and 1.3–4 Ω R_g enable precise gate timing control; body diode V_SD = 1.2 V supports zero-voltage switching transitions.

Transmission Solenoid Driver

Electric Power Steering (EPS) Motor Phase

Use Scenario: Driving 55 V-rated hydraulic solenoids with pulsed currents up to 30 A and 120 A surge peaks during gear engagement.

IC Role / Device Role / Timing Role: Robust switching element handling repetitive inductive kickback and high-energy UIS events.

Use Value: 20 mJ single-pulse avalanche energy and AEC-Q101 qualification ensure long-term reliability under mechanical shock and thermal cycling.

Use Scenario: Half-bridge leg in three-phase EPS motor inverter operating continuously at 15–25 A RMS with frequent torque transients.

IC Role / Device Role / Timing Role: High-efficiency phase switch delivering low conduction loss and minimal switching loss at 10–20 kHz PWM frequency.

Use Value: 3 °C/W R_thJC allows direct thermal coupling to aluminum chassis, maintaining T_J < 150 °C even at full load without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V, 220 A rated, but R_DS(on) = 0.0017 Ω at 10 V - significantly lower on-resistance in larger PowerFLAT 5x6 package	Designed for higher-current traction inverters; not drop-in due to different footprint and gate charge (45 nC)	Select STL220N5LF8AG only when >100 A peak current and ultra-low loss are required; SQD35N05-26L-GE3 remains optimal for 30 A class with TO-252 layout compatibility
IRF3205PBF	55 V, 110 A, R_DS(on) = 0.008 Ω at 10 V, but not AEC-Q101 qualified and max T_J = 175 °C not validated for automotive	Industrial-grade part lacking automotive stress testing; unsuitable for safety-critical or under-hood deployment	Use IRF3205PBF only in non-automotive, non-safety-critical 12 V systems where qualification is not mandated

Compared with STL220N5LF8AG and IRF3205PBF, SQD35N05-26L-GE3 offers the optimal balance of AEC-Q101 compliance, TO-252 manufacturability, 30 A capability, and 0.020 Ω R_DS(on) - making it the preferred choice for cost-sensitive, thermally constrained automotive modules requiring production-grade reliability.

Availability

SQD35N05-26L-GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for SQD35N05-26L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD35N05-26L-GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine management, transmission control, and ADAS power subsystems.

FAQ

What is the maximum continuous drain current rating for SQD35N05-26L-GE3 at 125 °C case temperature?

The SQD35N05-26L-GE3 supports 19 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-temperature operation and must be verified against actual board-level thermal performance using the 3 °C/W R_thJC value and system heatsinking capability.

Is SQD35N05-26L-GE3 suitable for use as a high-side switch in an automotive 12 V system?

Yes, SQD35N05-26L-GE3 can be used as a high-side switch in 12 V automotive systems when paired with a gate driver capable of providing ≥10 V gate-source voltage relative to the drain rail. Its 55 V V_DS rating provides sufficient margin above nominal 14 V battery voltage and transient load-dump spikes up to 40 V.

Does SQD35N05-26L-GE3 include integrated ESD protection on the gate terminal?

No, SQD35N05-26L-GE3 does not integrate dedicated ESD protection circuitry. Its gate oxide is rated for ±20 V V_GS, and gate leakage is specified at ±100 nA - consistent with standard MOSFET construction. External gate protection (e.g., Zener clamp or RC snubber) is recommended in high-noise automotive environments per design best practices.

What is the typical total gate charge (Q_g) of SQD35N05-26L-GE3 and how does it affect switching performance?

The SQD35N05-26L-GE3 has a typical total gate charge of 12 nC at V_GS = 5 V, V_DS = 25 V, and I_D = 35 A. This value directly determines gate drive power and switching transition times; for example, with a 1 Ω gate resistor, it achieves ~7 ns turn-on delay and ~10 ns rise time, supporting efficient operation up to 500 kHz in hard-switched topologies.

How is thermal performance characterized for SQD35N05-26L-GE3 in real-world PCB layouts?

SQD35N05-26L-GE3 thermal performance is characterized with a 1" × 1" FR-4 PCB (2 oz. copper, double-sided, 100 % coverage). Under those conditions, R_thJA is 60 °C/W and R_thJC is 3 °C/W. For production designs, thermal validation must account for actual copper area, layer stack-up, airflow, and proximity to other heat sources - especially critical given its +175 °C T_J rating and automotive under-hood placement.

SQD35N05-26L-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1175 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD35N05-26L-GE3 FAQ

1.How can I place an order for SQD35N05-26L-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD35N05-26L-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD35N05-26L-GE3 reliable?

The price and inventory of SQD35N05-26L-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD35N05-26L-GE3 is usually 5 days.

3.What payment methods are accepted for SQD35N05-26L-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD35N05-26L-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD35N05-26L-GE3?

SQD35N05-26L-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD35N05-26L-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD35N05-26L-GE3?

For technical support, including SQD35N05-26L-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD35N05-26L-GE3 requirements.

6.How does Aetrix verify that SQD35N05-26L-GE3 is sourced from the original manufacturer or authorized distributors?

All SQD35N05-26L-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD35N05-26L-GE3 meets industry standards.

7.What is the process for return or replacement of SQD35N05-26L-GE3?

All SQD35N05-26L-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD35N05-26L-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD35N05-26L-GE3 part is unused and in its original packaging.

Return procedure for SQD35N05-26L-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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