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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQD40020E_GE3

Name: SQD40020E_GE3
Brand: Vishay Siliconix
SKU: SQD40020E_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQD40020E_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQD40020E_GE3.pdf

Description:: MOSFET N-CH 40V 100A TO252AA

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Product details

Overview

SQD40020E_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 100 A continuous drain current at 25 °C, and 2.33 mΩ R_DS(on) at V_GS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-252 (DPAK) package with drain-connected tab - used in high-current DC motor drives and 12 V/24 V automotive power distribution.

For engineers reviewing the SQD40020E_GE3 datasheet, SQD40020E_GE3 pinout, SQD40020E_GE3 application, or SQD40020E_GE3 equivalent, key selection criteria include its low R_DS(on) at elevated temperature, 100 % R_g and UIS tested reliability, thermal resistance of 1.4 °C/W (junction-to-case), and suitability for space-constrained 12 V battery-fed systems requiring robust short-circuit immunity.

Technical Context

This MOSFET employs trench gate technology to achieve high cell density and low on-resistance while maintaining fast switching performance. Its gate charge profile (Q_g = 84–130 nC, Q_gd = 19.5 nC) supports efficient PWM control in high-frequency DC-DC converters and motor gate drivers.

The device integrates a robust body diode with reverse recovery time (t_rr) of 41–85 ns and Q_rr of 28–60 nC, enabling reliable freewheeling in synchronous rectification and H-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients.
R_DS(on) @ 10 V	2.33 mΩ - Enables <1 W conduction loss at 20 A, critical for thermally constrained PCB-mounted power stages.
I_D (continuous)	100 A @ T_C = 25 °C - Supports high-current loads such as starter relays, HVAC blowers, and EPS assist motors.
T_J max	+175 °C - Meets under-hood automotive thermal requirements without derating in sealed enclosures.
R_thJC	1.4 °C/W - Allows direct heatsinking via drain tab to metal chassis or copper pour, reducing thermal path impedance.
AEC-Q101	Qualified - Validated for automotive use per stress test standards including HTGB, HTRB, and UIS.
Q_g	84–130 nC - Determines gate driver power requirement; enables <30 ns turn-on delay with 1 Ω source impedance.

Pinout & Package

TO-252AA (DPAK) package with exposed drain tab thermally and electrically connected to the drain terminal. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab must be soldered to large copper area for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10 V logic-level drive; threshold voltage 2.5–3.5 V ensures compatibility with 3.3 V and 5 V microcontrollers.
D	Drain output / heat sink interface	Connected to high-side or low-side switched rail; tab must be electrically isolated from other layers unless used as heatsink ground.
S	Source return path	Common reference for gate drive and current sensing; low-inductance layout required to minimize switching oscillation.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 2.33 mΩ R_DS(on) in TO-252 - 30 % lower than planar equivalents at same voltage rating.
100 % R_g and UIS tested	Ensures gate robustness against ESD and avalanche energy handling up to 105.8 mJ per pulse.
Drain-connected tab	Reduces thermal resistance to 1.4 °C/W - enables >80 W dissipation with minimal heatsink area on FR4 PCB.
Body diode t_rr < 85 ns	Minimizes reverse recovery losses in bidirectional switching applications like regenerative braking circuits.

Applications

Automotive Body Control Module (BCM)	12 V DC Motor Drive
Use Scenario: Switching power to door locks, window lifters, and mirror actuators in modern BCMs. IC Role / Device Role / Timing Role: Low-side power switch controlling inductive loads with integrated flyback protection. Use Value: 100 A surge rating handles motor startup inrush; 175 °C rating ensures operation near engine compartment electronics.	Use Scenario: High-efficiency PWM control of radiator cooling fans and HVAC blower motors. IC Role / Device Role / Timing Role: Synchronous rectifier in half-bridge topology with fast body diode recovery. Use Value: 41 ns t_rr reduces switching loss by >25 % vs. standard MOSFETs in 20 kHz PWM operation.
Start-Stop System Load Switch	Industrial 24 V Power Distribution
Use Scenario: Managing auxiliary power during engine cranking and restart events in start-stop vehicles. IC Role / Device Role / Timing Role: High-current load switch with controlled turn-on to limit inrush into capacitive bus loads. Use Value: 2.33 mΩ R_DS(on) limits voltage drop to <25 mV at 10 A - preserves CAN/LIN communication integrity during cranking.	Use Scenario: Solid-state replacement for electromechanical relays in factory automation I/O modules. IC Role / Device Role / Timing Role: Low-loss power switch delivering 24 V to solenoids, valves, and PLC outputs. Use Value: AEC-Q101 qualification provides extended lifetime and failure-rate predictability beyond industrial-grade alternatives.

Automotive Body Control Module (BCM)

12 V DC Motor Drive

Use Scenario: Switching power to door locks, window lifters, and mirror actuators in modern BCMs.

IC Role / Device Role / Timing Role: Low-side power switch controlling inductive loads with integrated flyback protection.

Use Value: 100 A surge rating handles motor startup inrush; 175 °C rating ensures operation near engine compartment electronics.

Use Scenario: High-efficiency PWM control of radiator cooling fans and HVAC blower motors.

IC Role / Device Role / Timing Role: Synchronous rectifier in half-bridge topology with fast body diode recovery.

Use Value: 41 ns t_rr reduces switching loss by >25 % vs. standard MOSFETs in 20 kHz PWM operation.

Start-Stop System Load Switch

Industrial 24 V Power Distribution

Use Scenario: Managing auxiliary power during engine cranking and restart events in start-stop vehicles.

IC Role / Device Role / Timing Role: High-current load switch with controlled turn-on to limit inrush into capacitive bus loads.

Use Value: 2.33 mΩ R_DS(on) limits voltage drop to <25 mV at 10 A - preserves CAN/LIN communication integrity during cranking.

Use Scenario: Solid-state replacement for electromechanical relays in factory automation I/O modules.

IC Role / Device Role / Timing Role: Low-loss power switch delivering 24 V to solenoids, valves, and PLC outputs.

Use Value: AEC-Q101 qualification provides extended lifetime and failure-rate predictability beyond industrial-grade alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V, but TO-263 package - larger footprint and higher R_thJA (55 °C/W).	Requires PCB redesign for mounting; better suited for forced-air-cooled industrial inverters.	Choose when higher peak current (>120 A) and board-level heatsinking are available.
IRF1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V, TO-220 package, no AEC-Q101 qualification.	Lacks automotive reliability validation; unsuitable for safety-critical or under-hood deployment.	Acceptable only for non-automotive 12 V power supplies where cost dominates over thermal performance.

Compared with STL220N4F7AG and IRF1404ZPBF, SQD40020E_GE3 delivers superior thermal efficiency in compact TO-252 layout, guaranteed AEC-Q101 compliance for automotive use, and lowest R_DS(on) among DPAK-packaged 40 V MOSFETs - making it optimal for space- and reliability-constrained vehicle subsystems.

Availability

SQD40020E_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, 12 V/24 V motor control, and industrial power distribution requiring stable component supply across multi-year production cycles.

Supply support for SQD40020E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQD40020E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family - engineered specifically for high-current, high-temperature switching in engine control units, battery management, and ADAS power stages.

FAQ

What is the maximum continuous drain current rating for SQD40020E_GE3 at 125 °C case temperature?

The SQD40020E_GE3 supports 87.5 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its 175 °C junction temperature limit. Designers must verify PCB copper area and ambient conditions to maintain this rating in actual application.

Does SQD40020E_GE3 have a qualified AEC-Q101 rating, and what tests does that include?

Yes, SQD40020E_GE3 is AEC-Q101 qualified. This includes stress testing for high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), unclamped inductive switching (UIS), and electrostatic discharge (ESD) per HBM and CDM models. The qualification confirms suitability for automotive powertrain and chassis applications where long-term reliability under thermal cycling and electrical stress is mandatory.

What is the typical gate threshold voltage range for SQD40020E_GE3, and how does it affect microcontroller compatibility?

The SQD40020E_GE3 has a gate threshold voltage (V_GS(th)) range of 2.5 V to 3.5 V at I_D = 250 μA. This ensures reliable turn-on with standard 3.3 V and 5 V logic outputs, eliminating need for level-shifting gate drivers in most automotive MCU interfaces. The tight threshold distribution also improves parallel operation stability when multiple SQD40020E_GE3 devices share current.

Can SQD40020E_GE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, SQD40020E_GE3 is suitable for synchronous rectification due to its fast, soft-recovery body diode: t_rr = 41–85 ns, Q_rr = 28–60 nC, and V_SD = 0.8–1.5 V at I_F = 25 A. These values reduce reverse recovery loss and EMI generation compared to standard MOSFETs, enabling efficient operation in 100–500 kHz DC-DC converters without external diode supplementation.

What is the thermal resistance from junction to ambient (R_thJA) for SQD40020E_GE3 under standard PCB mounting conditions?

The SQD40020E_GE3 has a junction-to-ambient thermal resistance (R_thJA) of 50 °C/W when mounted on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. This value assumes full drain-tab soldering to the copper pour. Actual R_thJA will improve significantly with additional copper area or external heatsinking - critical for sustaining 100 A operation in compact automotive modules.

SQD40020E_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.33mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQD40020E_GE3 FAQ

1.How can I place an order for SQD40020E_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQD40020E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQD40020E_GE3 reliable?

The price and inventory of SQD40020E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD40020E_GE3 is usually 5 days.

3.What payment methods are accepted for SQD40020E_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD40020E_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQD40020E_GE3?

SQD40020E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQD40020E_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQD40020E_GE3?

For technical support, including SQD40020E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD40020E_GE3 requirements.

6.How does Aetrix verify that SQD40020E_GE3 is sourced from the original manufacturer or authorized distributors?

All SQD40020E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD40020E_GE3 meets industry standards.

7.What is the process for return or replacement of SQD40020E_GE3?

All SQD40020E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD40020E_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQD40020E_GE3 part is unused and in its original packaging.

Return procedure for SQD40020E_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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